Photodétectors for 1.3 μln - 1.55 μnl fiber optic transmissions: State of the art

In the optical fiber télécommunication systems, the emission and reception modules contain optoelectronic components such as laser diodes and photodiodes. Beside the laser whose task and complexity are obvious, the photodiode, the mechanism of which is quite straightforward, becomes a sophisticated device when optimized for 1.3–1.55 µm fiber window. For photodetection, the photodiode is always associated to a preamplifier obtained from a transistor. For a given link, the performances of the receiver straightly depend on those of the photodiode and of the transistor. Different types of photodetectors are suitable for 1.3 µm and 1.55 µm transmissions. This paper surveys the different semiconductors materials and device structures encountered nowadays, pointing out the respective merits of each solution. Comparisons between photoreceivers outline the importance of matching the photodiode to the transistor, whether dealing with hybrid or monolithic circuits.     

Components for optical communications systems: A review

Current trends in research and development of components for optical communication are reviewed. Emphasis is placed on active components for fiber-optic systems which have undergone recent major advances. Basic properties of optical fibers and recent technological improvements in splices, connectors, and source/detector-fiber couplers are presented first. This background information serves as a basis for describing recent developments in optical sources (e.g., device reliability, LED's and laser diodes) and photodetectors. Developments in both the 0.8-0.9-µm and 1.0-1.7-µm wavelength regions are covered. Also surveyed are results of research in areas of potential interest for optical communications: novel fiber-optic components, integrated optics (sources and modulators/switches), novel device fabrication methods, and integration of optical components.     

MBE-grown HgCdTe multi-layer heterojunction structures for high speed low-noise 1.3–1.6 µm avalanche photodetectors

HgCdTe is an attractive material for room-temperature avalanche photodetectors (APDs) operated at 1.3–1.6 μm wavelengths for fiber optical communication applications because of its bandgap tunability and the resonant enhancement of hole impact ionization for CdTe fractions near 0.73. The HgCdTe based separate absorption and multiplication avalanche photodetector is designed and fabricated for backside illumination through a CdZnTe substrate. The multi-layer device structure is comprised of seven layers including 1). n ⁺ contact 2). n ⁻ diffusion buffer 3). n ⁻ absorber 4). n charge sheet 5). n ⁻ avalanche gain 6). p to form junction, and 7).p ⁺ contact. Several wafers were processed into 45 μm × 45 μm and 100 (μm × 100 μm devices. The mean value of avalanche voltage is 63.7 V measured at room temperature. At 1 GHz, the device shows a gain of about 7 for a gain-bandwidth product of 7 GHz. This first demonstration of an all molecular beam epitaxially grown HgCdTe multi-layer heterojunction structure on CdZnTe substrates represents a significant advance toward the goal of producing reliable room temperature HgCdTe high speed, low noise avalanche photodetectors.     

Multimode-fiber technology for digital transmission

Multimode-fiber systems are presently being installed to meet some of the burgeoning demands for digital transmission in the telecommunications industry. These first-generation systems operate near 0.85-µm wavelength with laser transmitters and avalanche-photodiode receivers. Second-generation multimode systems may use simpler and more reliable LED's and p-i-n photodiodes operating near 1.3 µm, where fibers exhibit much lower loss and dispersion. This paper summarizes the state of the art of multimode-fiber digital transmission with special emphasis on emerging technologies for operation in the 1.1-1.7- µm wavelength region. Graded-index multimode fibers, lasers, LED's, photodetectors, receiver sensitivities, and noise penalties are considered. Finally, some of the requirements and challenges in applying these technologies are discussed.     

Breaking the Responsivity-Bandwidth Trade-Off Limit in GaN Photoelectrodes for High-Response and Fast-Speed Optical Communication Application

Underwater optical communication (UOC) has attracted considerable interest in the continuous expansion of human activities in marine/ocean environments. The water-durable and self-powered photoelectrodes that act as a battery-free light receiver in UOC are particularly crucial, as they may directly face complex underwater conditions. Emerging photoelectrochemical (PEC)-type photodetectors are appealing owing to their intrinsic aqueous operation characteristics with versatile tunability of photoresponses. Herein, a self-powered PEC photodetector employing n-type gallium nitride (GaN) nanowires as a photoelectrode, which is decorated with an iridium oxide (IrO_x) layer to optimize charge transfer dynamics at the GaN/electrolyte interface, is reported. Strikingly, the constructed n-GaN/IrO_x photoelectrode breaks the responsivity-bandwidth trade-off limit by simultaneously improving the response speed and responsivity, delivering an ultrafast response speed with response/recovery times of only 2 µs/4 µs while achieving a high responsivity of 110.1 mA W⁻¹. Importantly, the device exhibits a large bandwidth with 3 dB cutoff frequency exceeding 100 kHz in UOC tests, which is one of the highest values among self-powered photodetectors employed in optical communication system.     

Ge/Si waveguide photodiodes with built-in layers of Ge quantum dots for fiber-optic communication lines

The results of research aimed at the development of high-efficiency Ge/Si-based photodetectors for fiber-optic communication applications are reported. The photodetectors are designed as vertical p-i-n diodes on silicon-on-insulator substrates in combination with waveguide lateral geometry and contain Ge quantum-dot layers. The layer density of quantum dots is 1×10¹² cm^?2; the dot size in the plane of growth is ～8 nm. Unprecedentedly high quantum efficiency suitable for the range of telecommunication wavelengths is attained; specifically, in the waveguides illuminated from the end side, the efficiency was as high as 21 and 16% at 1.3 and 1.55 µm, respectively.     

High performance epitaxial HgCdTe photodiodes for 2.7 µm applications

High performance photovoltaic devices tailored for 2.7 µm cut-off have been fabricated on liquid phase epitaxial HgCdTe/CdTe. The peak external quantum efficiency is measured to be 67% without any AR-coating. The measured zero-bias resistance-area (R0A) product is 5 ∼ 10⁴µ-cm²at 195K and µ10⁷Ω-cm²at 140K. The demonstrated performance of HgCdTe photovoltaic devices tailored for a 2.7 µm cut-off is considerably better than conventional PbS photodetectors, which have appeared in available literature and which are currently in wide use in this spectral range.     

An Hg0.3Cd0.7Te avalanche photodiode for optical-fiber transmission systems at λ = 1.3 µm

The purpose of this paper is the characterization of Hg0.3Cd0.7Te avalanche photodiodes at γ = 1.3 µm. These devices are manufactured by tile Société Anonyme des Télécommunications. The multiplication noise for these APD's is measured. The value of the ratiok= β/α is deduced from noise measurements, β and α being, respectively, the hole and electron ionization coefficients. It is shown that these HgCdTe APD's are promising candidates for detectors of 1.3-µm optical communication.     

SMT安装的高速InGaAs光电探测器

介绍了表面安装技术中的倒装片法安装的几种ＩｎＧａＡｓ光电探测器，说明了ＦＣ技术对于制作１０Ｇｂ／ｓ光传输系统的高电探测器是完全有效和必不可少的。     

Space applications of optical communications

Optical communication in Space is now a reality. In this paper we present the recent developments that were undertaken in Europe for this application. We first describe the different missions where optical communications are useful: link between two geostationary satellites (geo-geo), Data Relay Mission (leo-geo) and High Data Rate Satellite Constellation Network. Then we detail the different candidate laser technologies from the most straightforward technologies that have been developed for optical fiber applications (λ=1.55 µm) and 0.8 µm technology based on Silicon detector to the recent developments based on high power fiber amplifiers. In the last chapter we describe thesilex (Semi conductor Intersatellite Link Experiment) program which performs optical communication betweenspot4 Earth observation satellite (cnes) andartemis (esa). The excellent results based on 0.8 µm laser diode technology are considered to be a major milestone in optical intersatellite communication     

Low-leakage, high-efficiency, reliable VPE InGaAs 1.0-1.7 µm photodiodes

High-quality InGaAs vapor-grown photodetectors for the 1.0-1.7 µm spectral region with a 100 µm diameter active area, ∼10-30 nA leakage current, 65-75 V breakdown voltage, 60-80% quantum efficiency, < 0.5 ns pulse rise time, < 1 pW/Hz^1/2noise equivalent power and stable leakage current at 60°C for over 4000 hours are described.     

H-BN-Encapsulated Uncooled Infrared Photodetectors Based on Tantalum Nickel Selenide

Uncooled broadband spectrum detection, spanning from visible to mid-wave-infrared regions, offers immense potential for applications in environmental monitoring, optical telecommunications, and radar systems. While leveraging proven technologies, conventional mid-wave-infrared photodetectors are encumbered by high dark currents and the necessity for cryogenic cooling. Correspondingly, innovative low-dimensional materials like black phosphorus manifest weak photoresponse and instability. Here, tantalum nickel selenide (Ta₂NiSe₅) infrared photodetectors with an operational wavelength range from 520 nm to 4.6 µm, utilizing a hexagonal boron nitride (h-BN) encapsulation technique are introduced. The h-BN encapsulated metal-Ta₂NiSe₅-metal photodetector demonstrates a responsivity of 0.86 A W⁻¹, a noise equivalent power of 1.8 × 10⁻¹¹ W Hz^−1/2, and a peak detectivity of 8.75 × 10⁸ cm Hz^1/2 W⁻¹ at 4.6 µm under ambient conditions. Multifaceted mechanisms of photocurrent generation in the novel device prototype subject are scrutinized to varying wavelengths of radiation, by characterizing the temporal-, bias-, power-, and temperature-dependent photoresponse. Moreover, the photopolarization dependence is delved and concealed-target imaging is demonstrated, which exhibits polarization angle sensitivity and high-fidelity imaging across the visible, short-wave, and mid-wave-infrared bands. The observations, which reveal versatile detection modalities, propose Ta₂NiSe₅ as a promising low-dimensional material for advanced applications in nano-optoelectronic device.     

Long-wavelength optical fiber communication

Recent research on long-wavelength lightwave communication utilizing the wavelength region between 1.3 and 1.6 µm is reviewed with an eye toward future system development. The attraction of the long-wavelength region is the availability of the ultimately low-loss and wide-band features of the silica fiber, where minimum loss is 0.27 dB/km at a wavelength of 1.3 µm and 0.16 dB/km at 1.55 µm. The single-mode fiber has found its first significant applications in long-wavelength systems. The specific characteristics of lightwave components are discussed with focus on physical fundamentals. The practical performance of fibers and lightwave devices is surveyed. The dynamic properties of long-wavelength laser diodes are discussed in relation to fiber characteristics. The noise characteristics of long-wavelength detectors are considered for the purpose of specifying the repeater spacing. Some system studies are reviewed, for example, 1.3-µm-wavelength lightwave systems, which have demonstrated bandwidth-distance products of about 40 GHz ċ km. Various approaches to extend the capacity of long-wavelength lightwave transmission are given. In the future, the 1.5-µm wavelength system could operate at the lowest loss wavelength region extending from 1.5 to 1.65 µm. Much higher performance, for example, bandwidth-distance products of 185 GHz ċ km, achieved by further continuation of research and development on lightwave sources as well as fibers. Because of the author's familiarity with work in Japan, that work is emphasized and most frequently cited.     

All‐Dielectric Metasurfaces for Simultaneous Giant Circular Asymmetric Transmission and Wavefront Shaping Based on Asymmetric Photonic Spin–Orbit Interactions

The control of polarization and wavefront plays an important role in many optical systems. In this work, a monolayer metasurface is proposed to simultaneously realize circular asymmetric transmission (AT) and wavefront shaping based on asymmetric spin–orbit interactions. Circularly polarized incidence, accompanied with arbitrary wavefront modulation, experiences spin‐selected destructive or constructive interference. An extinction ratio of ≈10:1 and an AT parameter of ≈0.69 at 9.6 µm, as well as a full width half‐maximum of ≈2.9 µm (≈30% of the peak wavelength), are measured with the designed metasurface. These measured results are more than four times of those achieved with previous monolayer chiral structures. As far as it is known, this is the first report on the realization of simultaneous giant AT and arbitrary wavefront modulation with only one metasurface. Due to its fabrication simplicity and the multifunctionality of the designed metasurface, this work may provide a promising route to replace bulky cascading optical components with only one ultrathin metasurface for chiroptical spectroscopy, chiral imaging, optical communication, and so forth.     

Graphene Heterostructure Integrated Optical Fiber Bragg Grating for Light Motion Tracking and Ultrabroadband Photodetection from 400 nm to 10.768 µm

Integrated photonics and optoelectronics devices based on graphene and related 2D materials are at the core of the future industrial revolution, facilitating compact and flexible nanophotonic devices. Tracking and detecting the motion of broadband light in millimeter to nanometer scale is an unfold science which has not been fully explored. In this work, tracking and detecting the motion of light (millimeter precision) is first demonstrated by integrating graphene with an optical fiber Bragg grating device (graphene‐FBG). When the incident light moves toward and away from the graphene‐FBG device, the Bragg wavelength red‐shifts and blue‐shifts, indicating its light motion tracking ability. Such light tracking capability can be further extended to an ultrabroad wavelength range as all‐optical photodetectors show the robust response from 400 nm to 10.768 µm with a linear optical response. Interestingly, it is found that graphene‐Bi₂Te₃ heterostructure on FBG shows 87% higher photoresponse than graphene‐FBG at both visible and telecom wavelengths, due to stronger phonon‐electron coupling and photo‐thermal conversion in the heterostructure. The device also shows superior stability even after 100 d. This work may open up amazing integrated nanophotonics applications such as astrophysics, optical communication, optical computing, optical logic gating, spectroscopy, and laser biology.     

Flexible Vanadium Dioxide Photodetectors for Visible to Longwave Infrared Detection at Room Temperature

Flexible optoelectronics is a rapidly growing field, with a wide range of potential applications. From wearable sensors to bendable solar cells, curved displays, and curved focal plane arrays, the possibilities are endless. The criticality of flexible photodetectors for many of these applications is acknowledged, however, devices that are demonstrated thus far are limited in their spectral range. In this study, flexible photodetectors are demonstrated using a VO_x nanoparticle ink, with an extremely broad operating wavelength range of 0.4 to 20 µm. This ink is synthesized using a simple and scalable wet-chemical process. These photodetectors operate at room temperature and exhibit minimal variance in performance even when bent at angles of up to 100 ° at a bend radius of 6.4 mm. In addition, rigorous strain testing of 100 bend and release cycles revealed a photoresponse with a standard deviation of only 0.55%. This combination of mechanical flexibility, wide spectral response, and ease of fabrication makes these devices highly desirable for a wide range of applications, including low-cost wearable sensors and hyperspectral imaging systems.     

Gigabit/s Optical Receiver Sensitivity and Zero-Dispersion Single-Mode Fiber Transmission at 1.55 µm

High-speed pulse response and receiver sensitivity at 1.55 µm were measured at data rates ranging from 400 Mbits/s to 2 Gbits/s, in order to elucidate characteristics of a reach-through p/sup +/nn/sup -/ Ge APD. The p/sup +/nn/sup -/ Ge APD receiver provided a 2 Gbit/s received optical power level of -32.0 dBm at 1.55 µm and a 10/sup -9/ error rate, which was 4 dB better than the receiving level with a p/sup +/n Ge APD. Detector performance at 1.3 µm was also studied for comparison with performance at 1.55 um. Single-mode fibers, which have 0.54 dB/km loss and zero dispersion at 1.55 µm, and an optical transmitter-receiver, whose repeater gain is 29.2 dB, have enabled 51.5 km fiber transmission at 2 Gbits/s. The transmission system used in this study has a data rate repeater-spacing product of 103 (Gbits/s) /spl dot/ km at 1.55 µm. Optical pulse broadening and fiber dispersion were also studied, using 1.55 and 1.3 µm dispersion free fibers. Future repeater spacing prospects for PCM-IM single-mode fiber transmission systems are discussed based on these experimental results.     

High System Performance with Plasmonic Waveguides and Functional Devices

Photonics offers a solution to data communication between logic devices in computing systems; however, the integration of photonic components into electronic chips is rather limited due to their size incompatibility. Dimensions of photonic components are therefore being forced to be scaled down dramatically to achieve a much higher system performance. To integrate these nano‐photonic components, surface plasmon‐polaritons and/or energy transfer mechanisms are used to form plasmonic chips. In this paper, the operating principle of plasmonic waveguide devices is reviewed within the mid‐infrared spectral region at the 2 µm to 5 µm range, including lossless signal propagation by introducing gain. Experimental results demonstrate that these plasmonic devices, of sizes approximately half of the operating free‐space wavelengths, require less gain to achieve lossless propagation. Through optimization of device performance by means of methods such as the use of new plasmonic waveguide materials that exhibit a much lower minimal loss value, these plasmonic devices can significantly impact electronic systems used in data communications, signal processing, and sensors industries.     

Fiber-optical transmission between 0.8 and 1.4 µm

The present state of the art and expected development in discrete components for fiber-optic transmission systems are reviewed. Predicted performance of fiber systems in the 0.85, 1.06, and 1.27 µm regions is presented, and the advantages of longer wavelength operation quantified. It is concluded that operation near 1.27 µm is particularly attractive for a) moderate data rate systems employing LED's and multimode fibers whose chromatic dispersion and attenuation are greatly reduced compared with 0.85 and 1.06 µm, and b) high data rate systems employing lasers and monomode fibers. In systems employing lasers and graded index multimode fibers, the advantage of 1.27 µm versus 1.06 µm operation is not as pronounced, although transmission distances at both of these longer wavelengths are significantly increased from those at 0.85 µm.     

Fast Photothermoelectric Response in CVD-Grown PdSe2 Photodetectors with In-Plane Anisotropy

PdSe₂, a star photosensitive functional material, has been successfully used in photodetectors based on sensing mechanisms of photogating, photoconductive, and photovoltaic effects. Here, a photothermoelectric (PTE) effect is observed in photodetectors based on PdSe₂ flakes grown by chemical vapor deposition. The unique photoresponse arises from an electron temperature gradient instead of electron–hole separation. Direct evidence of the PTE effect is confirmed by a nonlocal photoresponse under zero bias. Moreover, the PdSe₂ photodetector shows high performance in terms of ultrafast response speed (4 µs), high air-stability, broadband spectrum photodetection, reasonable responsivity, and anisotropic optical response. This study paves a new way for developing high-performance photodetectors based on PdSe₂ layered materials.