自恢复蒙特卡罗定位算法

机器人定位技术作为智能机器人领域的重要技术,是机器人进行自主规划和导航的重要前提。为解决机器人运动过程中的绑架问题,在蒙特卡罗定位(Monte Carlo localization, MCL)算法的基础上,提出了基于激光雷达似然域模型的定位可靠度评判算法以及基于惯性导航单元的定位自恢复模型。定位可靠度评判算法对机器人是否发生绑架问题进行判定,当发生绑架问题后,首先基于惯性导航单元的测量数据进行位姿预估计,然后基于预估计的位姿构建粒子重分布模型,最后进行粒子滤波得到重定位的结果,达到了对机器人绑架判定和自恢复定位的目的。经过实验测试和对比,该算法可以对绑架问题进行高效的判断,具有更高的恢复效率和准确度。     

Improved sequential stopping rule for Monte Carlo simulation

This letter presents an improved result on the negative-binomial Monte Carlo technique analyzed in a previous paper1 for the estimation of an unknown probability p. Specifically, the confidence level associated to a relative interval [p/?2, p?1], with ?1, ?2 > 1, is proved to exceed its asymptotic value for a broader range of intervals than that given in the referred paper, and for any value of p. This extends the applicability of the estimator, relaxing the conditions that guarantee a given confidence level.     

FPGA-based Monte Carlo simulation for fault tree analysis

The reliability analysis of critical systems is often performed using fault-tree analysis. Fault trees are analyzed using analytic approaches or Monte Carlo simulation. The usage of the analytic approaches is limited in few models and certain kinds of distributions. In contrast to the analytic approaches, Monte Carlo simulation can be broadly used. However, Monte Carlo simulation is time-consuming because of the intensive computations. This is because an extremely large number of simulated samples may be needed to estimate the reliability parameters at a high level of confidence.In this paper, a tree model, called Time-to-Failure tree, has been presented, which can be used to accelerate the Monte Carlo simulation of fault trees. The time-to-failure tree of a system shows the relationship between the time to failure of the system and the times to failures of its components. Static and dynamic fault trees can be easily transformed into time-to-failure trees. Each time-to-failure tree can be implemented as a pipelined digital circuit, which can be synthesized to a field programmable gate array (FPGA). In this way, Monte Carlo simulation can be significantly accelerated. The performance analysis of the method shows that the speed-up grows with the size of the fault trees. Experimental results for some benchmark fault trees show that this method can be about 471 times faster than software-based Monte Carlo simulation.     

Monte Carlo simulation of bipolar transistors

A new approach is proposed to investigate, the limits of validity of the conventional drift-diffusion equation analysis for modeling bipolar transistor structures containing submicrometer dimensions. The single-particle Monte Carlo method is used for the solution of the Boltzmann equation. An electron velocity overshoot of 1.8 times the static saturation velocity has been found for electrons near the base-collector junction of a silicon device. The effect of this velocity overshoot was calculated to enhance the output collector current and reduce the electron transit time by 5 percent for the device structure considered in this work.     

鲜红斑痣数值计算模型的构建及其蒙特卡罗模拟

基于人体皮肤的组织结构以及鲜红斑痣(PWS)皮肤的病理特征,光在皮肤组织中的传输特性以及皮肤各层的组织光学参数,建立了一种具有多层组织结构的鲜红斑痣皮肤数值模拟计算模型,介绍了该模型中组织光学参数的确定方法.利用蒙特卡罗(MC)方法结合临床数据对模型进行了验汪,同时计算了光能量在PWS皮肤中随深度的分布,结果可为临床上如何选择最佳光剂量提供部分参考依据.利用本模型做进一步的详细完整的计算可以为光动力学治疗PWS提供理论支持.     

A low-complexity sequential Monte Carlo algorithm for blind detection in MIMO systems

In statistical signal processing, the sequential Monte Carlo (SMC) method is powerful and can approach the theoretical optima. However, its computational complexity is usually very high, especially in multiple-input multiple-output (MIMO) systems. This paper presents a new low-complexity SMC (LC-SMC) algorithm for blind detection in MIMO systems, the main idea of which is to shrink the sampling space via channel estimation which is initialized using the first differentially modulated symbol and then updated using the Monte Carlo samples. Since the a posteriori probability of the transmitted symbols can be calculated separately by each transmit antenna, the proposed LC-SMC algorithm is not only computationally efficient, as compared to the original SMC whose complexity grows exponentially with the number of transmit antennas, but also makes blind turbo receiver more feasible for multilevel/phase modulations. Simulation results are presented to demonstrate the effectiveness of the LC-SMC algorithm.     

Trajectory split method for Monte Carlo simulation of ionimplantation

A new method for the acceleration of two- and three-dimensional Monte Carlo simulation of ion implantation into crystalline targets is presented. The trajectory split method ensures a much better statistical representation in regions with a dopant concentration several orders of magnitudes smaller than the maximum. As a result, the time required to perform a simulation with comparable statistical accuracy is drastically reduced. The advantages of the new approach have been confirmed by a thorough statistical analysis     

Extended Monte Carlo localization algorithm for mobile sensor networks

A real-world localization system for wireless sensor networks that adapts for mobility and irregular radio propagation model is considered. The traditional range-based techniques and recent range-free localization schemes are not well competent for localization in mobile sensor networks, while the probabilistic approach of Bayesian filtering with particle-based density representations provides a comprehensive solution to such localization problem. Monte Carlo localization is a Bayesian filtering method that approximates the mobile node＇s location by a set of weighted particles. In this paper, an enhanced Monte Carlo localization algorithm-Extended Monte Carlo Localization （Ext-MCL） is proposed, i.e., the traditional Monte Carlo localization algorithm is improved and extended to make it suitable for the practical wireless network environment where the radio propagation model is irregular. Simulation results show the proposal gets better localization accuracy and higher localizable node number than previously proposed Monte Carlo localization schemes not only for ideal radio model, but also for irregular one.     

Integration of a particle-particle-particle-mesh algorithm with theensemble Monte Carlo method for the simulation of ultra-smallsemiconductor devices

A particle-particle-particle-mesh (P³M) algorithm is integrated with the ensemble Monte Carlo (EMC) method for the treatment of carrier-impurity (c-i) and carrier-carrier (c-c) effects in semiconductor device simulation. Ionized impurities and charge carriers are treated granularly as opposed to the normal continuum methods and c-i and c-c interactions are calculated in three dimensions. The combined P³M-EMC method follows the approach of Hockney (1981), but is modified to treat nonuniform rectilinear meshes with arbitrary boundary conditions. Bulk mobility results are obtained for a three-dimensional (3-D) resistor and are compared with previously reported experimental and numerical results     

Monte Carlo simulation of growth of nanowhiskers

The growth of silicon nanowhiskers on the Si (111) surface activated with Au is studied by Monte Carlo simulation. The dependences of the rate of growth of whiskers on the temperature, deposition rate, and catalyst droplet diameter are obtained, and the morphological properties of the growing wirelike nanocrystal are studied. In addition to the growth of nanowhiskers, a number of experimentally observed effects, such as migration of the droplet from the whisker top, faceting of the whisker sidewalls, and branching are established for the model system. It is shown that, under certain conditions of wetting of the whisker material with the catalyst, formation of hollow nanowhiskers is possible.     

Direct Monte Carlo simulation of hot-carrier conductivity

We present a Monte Carlo procedure which, by including the mechanism of generation and recombination from impurity centers, enables us to calculate directly from the simulation the field dependent conductivity for the first time. The reliability of the theoretical model has been checked by comparing numerical results with experiments provided by the Montpellier group and performed on p-Si at different acceptor concentrations and temperatures.     

Monte Carlo simulation and random number generation

Methods of generating pseudorandom number sequences that might have predetermined spectral and probability distribution functions are discussed. Such sequences are of potential value in Monte Carlo simulation of communication, radar, and allied systems. The methods described are particularly suited to implementation on microcomputers, are machine portable, and have been subjected to exhaustive investigation by means of both statistical and theoretical tests     

A new Monte Carlo circuit simulation paradigm with specific results for resistive networks

In this paper, we formulate a new type of Monte Carlo problem for circuits. Specific results are given for the class of resistive networks and open research problems are indicated for more general cases. Given lower and upper bounds on the value of each resistor but no probability distribution, we consider the problem of estimating appropriate probabilistic measures of performance. In view of the fact that no a priori probability distributions for the uncertain resistors are assumed, a certain type "distributional robustness" is sought. To this end, a new paradigm from the robustness literature is particularized to these circuits. Some of the performance bounds obtained via this new approach differ considerably from those which result from a more conventional Monte Carlo simulation.     

Monte Carlo simulation of threshold bandwidth for high-order harmonic extraction

The feasibility of bulk semiconductors subjected to strong periodic electric fields for terahertz radiation generation due to the high-order harmonic extraction is analyzed by using Monte Carlo simulations. The high-order harmonic intensity and the spectral density of velocity fluctuations are calculated for GaAs, InP, and InN. By comparing the harmonic intensity with the noise level the threshold bandwidth for high-order harmonic extraction determined by their ratio is introduced and evaluated for the above materials. The results show that semiconductor materials with a high value of the threshold field for the Gunn-effect are characterized by a high value of the threshold bandwidth under high-order harmonic generation and, hence, they are promising materials for microwave generation in the THz frequency range by high-order harmonic extraction.     

Monte Carlo surface scattering simulation in MOSFET structures

The Monte Carlo method has been applied to MOSFET devices with the gate lengths less than 1 µm. The electric field in the channel was obtained by an analytical approach. Since the classical situation is approached in the submicrometer gate device, the partial diffusive model is employed for surface scattering process. Transient phenomena such as velocity overshoot have been predicted with drain biases causing a large field gradient in the channel. Comparison of the results of the Monte Carlo simulation with those obtained by an analytical approach based on static mobility shows that the carrier transit time in the channel is shorter (as much as two times) than that predicted by the analytical approach for a 0.3 µm gate device.     

火灾探测器可靠性的Monte Carlo仿真

从“人-机-环境”的角度对导致火灾探测器误报、漏报的原因进行了分析，利用Monte Cario系统仿真方法对火灾探测器的可靠性进行了模拟分析，得到的探测器可靠度、故障率曲线与理论和工程实际情况相符。正确地描述了火灾探测器的故障率随时间变化的规律，为进一步应用该方法来分析整个火灾探测报警系统的可靠性提供了理论基础。     

Monte Carlo simulation of GaAs Schottky barrier behaviour

The transport of carriers through the space-charge region (SCR) of a GaAs Schottky barrier is studied by the Monte Carlo simulation technique. Simulation results indicate that the carrier distribution is significantly perturbed from a Max-wellian near the metal-semiconductor boundary, limiting the validity of the commonly used thermionic diffusion model. Phenomena related to the disturbed distribution include increased recombination velocity at the interface and reduced carrier concentration near the junction. The interface recombination velocity is found to be constant with applied bias and the Bethe condition is shown to be more than sufficient to ensure the validity of the thermionic emission model.     

Bootstrap, an alternative to Monte Carlo simulation

The Monte Carlo simulation is a commonly used technique for circuit analysis, but is computationally expensive. The bootstrap method can save simulation time and retain the desired accuracy     

Monte Carlo simulation and measurement of nanoscale n-MOSFETs

The output characteristics of state-of-the-art n-MOSFETs with effective channel lengths of 40 and 60 nm have been measured and compared with full-band Monte Carlo simulations. The device structures are obtained by process simulation based on comprehensive secondary ion mass spectroscopy and capacitance-voltage measurements. Good agreement between the measured output characteristics and the full-band Monte Carlo simulations is found without any fitting of parameters and the on-currents are reproduced within 4%. The analysis of the velocity profiles along the channel confirms that the on-current is determined by the drift velocity in the source side of the channel. Analytic-band Monte Carlo simulations are found to involve an overestimation of the drain current in the nonlinear regime which becomes larger for increasing drain voltage and decreasing gate length. The discrepancy originates from a higher nonlinear drift velocity and a higher overshoot peak in bulk silicon which is due to differences in the band structures above 100 meV. The comparison between analytic-band and full-band Monte Carlo simulation therefore shows that the source-side velocity in the on-state is influenced by nonlinear and quasiballistic transport.