绿色荧光粉CaBi_2Ta_2O_9:Ho~(3+)的制备及发光性能

采用高温固相反应法制备了Ho3+离子掺杂铋层结构铁电氧化物CaBi2Ta2O9(CBTO)荧光粉。分别对样品进行了X射线衍射(XRD)分析、扫描电镜(SEM)测试和荧光光谱(PL)的测定。研究表明:荧光粉CBTO:Ho3+的最强激发峰位于450 nm,与商用蓝光LED的发射光波长相匹配,位于548 nm的极强绿光发射峰源于Ho3+离子的5I8→5G6跃迁。分析了Ho3+离子掺杂浓度对样品发光强度的影响,其最佳掺杂摩尔分数为0.04%,对应的色坐标为(0.2754,0.7120)。     

绿色荧光粉CaBi2Ta2O9：Ho^3＋的制备及发光性能

采用高温固相反应法制备了Ho^3＋离子掺杂铋层结构铁电氧化物CaBi2Ta2O9（CBTO）荧光粉。分别对样品进行了X射线衍射（XRD）分析、扫描电镜（SEM）测试和荧光光谱（PL）的测定。研究表明：荧光粉CBTO：Ho^3＋的最强激发峰位于450nm,与商用蓝光LED的发射光波长相匹配,位于548nm的极强绿光发射峰源于Ho^3＋离子的^5I8→^5G6跃迁。分析了Ho^3＋离子掺杂浓度对样品发光强度的影响,其最佳掺杂摩尔分数为0.04％,对应的色坐标为（0.2754,0.7120）。     

单一基质白光荧光粉Ba3Y1－x(PO4)3:xDy3+的合成及其发光特性

采用高温固相法,合成了Ba3Y1-x(PO4)3:xDy3+荧光粉。X射线衍射(XRD)图谱表明,合成物质为纯相Ba3Y(PO4)3晶体。激发谱和发射谱表明,样品的主发射峰位于486nm(4F9/2→6H15/2)和575nm(4F9/2→6H13/2),为典型的Dy3+特征发射,对应于样品的蓝光和黄光发射,其中以348nm激发时得到的峰值最强。样品的主激发峰有8个,均为Dy3+吸收,分别位于292nm(6H15/2→4D7/2),322nm(6H15/2→6P3/2),348nm(6H15/2→6P7/2),362nm(6H15/2→6P5/2),385nm(6H15/2→4M21/2),424nm(6H15/2→4G11/2),452nm(6H15/2→4I15/2)和473nm(6H15/2→4F9/2)处。研究了Dy3+掺杂浓度对发光性能的影响,在掺杂浓度x=0.08时,出现了浓度猝灭,浓度猝灭机理为电偶极-电偶极相互作用;不同Dy3+掺杂浓度荧光粉发射光的色坐标均在白光区域中。同时,研究了敏化剂Ce3+对Ba3Y(PO4)3:Dy3+材料发光强度的影响。     

CaBi2Ta2O9:Pr3+黄色荧光粉的制备与性能研究

采用高温固相反应法,制备了系列Pr3+掺杂的CaBi2Ta2O9(CBTO:Pr3+)Bi层状结构铁电氧化物(BLSFs)粉体。利用X射线衍射(XRD)、扫描电子显微镜(SEM)对样品的晶体结构和形貌进行了表征。利用积分球式分光光度计和荧光光谱仪对样品的光学性能进行了分析。XRD结果表明,所生成的样品均为CBTO纯相。样品的吸收和激发光谱表明,在449~500nm波长范围存在Pr3+的f-f跃迁吸收;样品的发射光谱由绿光(525~575nm)和红光(575~700nm)发射两部分组成,避免了白光LED中再吸收的问题。随着Pr3+掺杂浓度的增加,样品的发光强度先增强后减弱,当Pr3+的掺杂浓度为2mol%时发光强度最大。研究了Ca0.98Pr0.02Bi2Ta2O9的热稳定性,并通过计算得到其热猝灭激活能E=0.24eV。显色指数(CIE)色坐标图表明,所制备的样品可以被蓝光有效激发而发出黄光。研究结果表明,CBTO:Pr3+可以用于蓝光LED芯片激发用的黄色荧光粉。     

新型红色荧光粉NaY（MoO4）2:Sm3+的制备及发光性能的研究

采用高温固相法制备了NaY(MoO4)2:Sm3+新型红色荧光粉,研究了Sm3+在NaY(MoO4)2基质中的发光特性。X射线衍射(XRD)测量结果表明,烧结温度为550℃时,制备的样品为纯相NaY(MoO4)2晶体。样品激发谱由两部分组成:220～340nm为电荷迁移带,峰值位于297nm;350～500nm的一系列线状峰为Sm3+的特征激发峰,最强峰位于403nm(6 H5/2→4 F7/2)。样品可被UV-LED管芯及蓝光激发。发射谱由564nm(4 G5/2→6 H5/2),600nm和607nm(4 G5/2→6 H7/2)、647nm(4 G5/2→6 H9/2)和708nm(4 G5/2→6 H11/2)4个峰组成,最强发射峰位于647nm(4 G5/2→6 H9/2),呈现红光发射。研究了不同Sm3+掺杂浓度对NaY1-X(MoO4)2:xSm3+材料发光强度的影响,X=0.05时出现浓度猝灭,分析表明,其猝灭机理是电偶极-电偶极的相互作用。     

白光LED用ZnMoO_4∶Tb~(3+),K~+发光材料的制备及发光特性

采用高温固相法合成了Zn0.85Tb0.15MoO4绿色荧光粉,利用XRD和荧光光谱仪对样品进行了测试表征。XRD测试结果表明,在800°C温度下烧结能形成ZnMoO4纯相。激发光谱由MoO42-的电荷迁移宽带(CT)和Tb3+离子特征激发峰组成;研究发现,掺杂了K+离子后电荷迁移带峰位位置向短波方向移动;分析了碱土金属离子K+作为电荷补偿剂对样品发光性能的影响,发现加入电荷补偿剂可大大提高样品的发光强度。该荧光粉的发射光谱光由位于487 nm,543 nm,584 nm,620 nm处的四组发射峰组成,分别对应Tb3+的5D4-7F6(487 nm),5D4-7F5(543 nm),5D4-7F4(584 nm)和5D4-7F3(620 nm)能级跃迁,而5D4-7F5(543 nm)的跃迁发射最强。     

Sr3Ga2O5Cl2:Sm3+荧光粉的制备及发光特性

采用传统的高温固相法成功合成了Sr3-xGa2O5Cl2:Sm3+系列橙红色荧光粉。使用X射线衍射仪（XRD）测试了样品的晶体结构,样品的形貌和颗粒尺寸由扫描电子显微镜（SEM）表征,使用荧光光谱仪测试了样品的光致发光光谱和衰减寿命。Sr3Ga2O5Cl2晶相为单斜结构,掺杂的Sm3+离子取代Sr2+的格位成为荧光粉的发光中心。样品的激发光谱由O2-→Sm3+的电荷迁移带和Sm3+离子4f内层电子的特征激发峰组成,位于230 nm、404 nm的激发峰较强。发射光谱的峰值位于565、601、650 nm处,分别对应于Sm3+的4G5/2→6H5/2、4G5/2→6H7/2、4G5/2→6H9/2特征跃迁。样品的发光强度随着Sm3+浓度的增加先增大后减小,最佳掺杂浓度为3.0% mol。根据实验数据对浓度淬灭的原因进行了探讨,浓度淬灭机理为电偶极-电偶极相互作用。     

白光LED用Sr3（PO4）2∶Tb3+,Li+荧光粉的制备工艺及发光性能

采用沉淀-燃烧法结合超声波技术合成了小颗粒Sr3(PO4)2∶Tb3+荧光粉,测量了其光谱特性。在Sr3(PO4)2∶Tb3+体系中观察到Tb3+的特征发射,峰值波长分别为489,542,584,620nm,分别对应于Tb3+的5 D4→7F6、5 D4→7F5、5 D4→7F4和5 D4→7F3跃迁,其中542nm处的绿色发射最强。激发光谱由4f75d1宽带吸收(200～280nm)和4f→4f电子跃迁吸收(280～390nm和475～500nm)组成,可被近紫外发光二极管(NUV-LED)有效激发。采用R+(R=Li,Na,K)作为电荷补偿剂,结果表明:Li+作为电荷补偿剂使样品发光强度提高了31%,Na+和K+的掺入则降低了粉体在近紫外区的吸收。     

白光LED用红色荧光粉Sr0.7Ca0.3－2xMoO4:Eux3+Nax+的制备及发光性能研究

采用高温固相法合成白光LED用红色荧光粉Sr0.7Ca0.3-2 xMoO4Eux3+Nax+,对样品分别进行X射线衍射(XRD)分析和荧光光谱的测定,讨论了不同掺杂量下合成的荧光粉的发光性质。XRD图谱分析表明,在1 000℃下灼烧9h得到的样品为纯相的SrMoO4。研究结果表明,制备的Sr0.7Ca0.3-2 xMoO4:Eux3+Nax+荧光粉可以被近紫外光(393nm)和蓝光(464nm)有效激发;发射光谱中,在波长在611nm和615nm处有很强的发射峰,其中最强发射峰位于615nm左右,与Eu3+的5D0→7F2跃迁对应。进一步探讨Na+和Eu3+掺杂浓度对发光强度的影响,得出Sr0.7Ca0.3-2 x MoO4:Eux3+Nax+样品的发光强度比SrMoO4:Eu3+Na+增强,当掺杂量x=0.07时,Sr0.7Ca0.3-2 x MoO4:Eux3+Nax+样品在波长614nm处发光强度最强。最后测试计算样品在393nm紫外激发下的色坐标,当Eu3+和Na+的掺杂量x=0.02时,样品红色显示最强。研究结果表明,所合成的红色荧光粉Sr0.7Ca0.3-2 xMoO4:Eux3+Nax+新型红色荧光粉适合在白光LED中应用。     

Y3MgAl3SiO12:Dy 3+,Eu 3+荧光粉的能量传递与暖白光实现

采用高温固相法合成了Dy ³⁺、Eu ³⁺共掺杂Y₃MgAl₃SiO₁₂石榴石型荧光粉。采用XRD、荧光光谱仪等仪器对样品的结构以及光谱特性进行表征,探究了Dy ³⁺/Eu ³⁺在Y₃MgAl₃SiO₁₂基质结构中的光谱特征以及离子间的能量传递机制。在367 nm近紫外光激发下,Y₃MgAl₃SiO₁₂:Dy ³⁺,Eu ³⁺的发射光谱包含Dy ³⁺的6F9/2到6H15/2和6H13/2的电子跃迁特征发射(487 nm蓝光和592 nm黄光)和Eu ³⁺的5D0 7F2 and 5D0 7F4特征发射峰(616 nm和710 nm红光)。在400~500 nm范围内Dy ³⁺发射谱与Eu ³⁺激发谱重叠,表明Dy ³⁺与Eu ³⁺之间存在着能量传递,能量传递的机理为电四极-电四极相互作用。该荧光粉通过调整Dy ³⁺和Eu ³⁺的掺杂浓度比封装近紫外LED芯片,可以实现单基质暖白光LED照明。     

（Li,Nb）掺杂SnO2压敏材料的电学非线性研究

研究了掺锂对SnO2压敏电阻器性能的影响.研究发现Li+对Sn4+的取代能明显提高陶瓷的烧结速度和致密度,且能大幅度改善材料的电学非线性性能.掺入x(Li2CO3)为1.0%的陶瓷样品具有最高的密度(P=6.77g/cm3)、最高的介电常数(ε=1851)、最低的视在势垒电场(EB=68.86V/mm)和最高的非线性常数(α=9.9).对比发现,Na+由于具有较大的离子粒半径,其掺杂改性性能相对较差.提出了SnO2@Li2CO3@Nb2O5晶界缺陷势垒模型.     

CaSi2O2N2:Ce3+/Eu2+荧光粉的发光性能研究

采用高温固相反应法制备了CaSi₂O₂N₂:C e³⁺/Eu ²⁺荧光粉,研究了分别掺杂Ce³⁺、Eu²⁺及Ce³⁺/Eu²⁺共掺 杂时荧光粉 的发光特性。CaSi₂O₂N₂:Ce³⁺在333 nm激发下得到宽波段的发射谱,发射峰 位于395nm,随着Ce³⁺浓度的增大,发 射波长出现明显的红移,猝灭浓度为1mol%。CaSi₂O₂N₂:Eu²⁺在397nm激发下得到峰值位于540nm处的宽波段发射谱, 猝灭浓度为1mol%。对于Ca0.99－2xSi₂O₂N₂:xCe ³⁺,xLi⁺,0.01Eu²⁺荧光粉,在333nm激发下,位于395nm处的发射峰十分微 弱,在540nm处有宽带发射,随着Ce³⁺浓度增大,位于540nm处的Eu²⁺的特征 发射显著增强。对于Ca0.98－ySi₂O₂N₂: 0.01Ce³⁺,0.01Li⁺,yEu²⁺荧光粉,在激发光波长 为333nm,Eu²⁺浓度较低时,可以观察到两个发射带,峰值分 别位于395nm及540nm,随着Eu²⁺浓度增加,位于395nm的 发射强度一直减小,而540nm处的发射强度先增加后减小,猝灭浓 度为0.4mol%。证实了Ce³⁺,Eu²⁺之间发生了有效的能 量传递。计算出Ce 3+、Eu²⁺之间能量传递的效率ηT,在Eu²⁺浓 度为 1mol%时ηT趋于饱和,达到97.7%。通过计算,得到Ce3+ 与Eu²⁺之间的能量传递方式为电偶极-电偶极相互作用。     

Effect of Ge-GeO2 co-doping on non-ohmic behaviour of TiO2-V2O5-Y2O3 varistor ceramics

An investigation was made into the effect of doping with the elemental crystal Ge or/and GeO₂ on the TiO₂-V₂O₅-Y₂O₃ varistor ceramics. The result shows that as the doping contents of V₂O₅ and Y₂O₃ are 0.5 mol%, respectively, co-doping with 0.3 mol% Ge and 0.9 mol% GeO₂ makes the highest α value (α = 12.8), the lowest breakdown voltage V_1mA (V_1mA = 15.8 V/mm) and the highest grain boundary barrier Φ_B (Φ_B = 1.48 eV), which is remarkably superior to the TiO₂-V₂O₅-Y₂O₃ varistor ceramics undoped with Ge and GeO₂ and mono-doped with Ge or GeO₂. The TiO₂-V₂O₅-Y₂O₃-Ge-GeO₂ ceramic has the prospect of becoming a novel varistor ceramic with excellent electrical properties.     

Temporal stability of circulating current in thin film Tl2Ba2CaCu2O8 and YBa2Cu3O7

The temporal stability of trapped transport current in annular thin film Tl₂Ba₂CaCu₂O₈ (TBCCO) and YBa₂Cu₃O₇ (YBCO) wafers has been accurately measured and has been found to be of suitable quality for the stringent requirements of nuclear magnetic resonance (NMR) magnets. No detectable decay, to the limit of the experimental apparatus (2*10^-14 Ω), was detected in those wafers with transport current at or below the critical current density J_c. The critical current density, as previously determined from 12 μm meander lines, was confirmed in a wafer with a width of 1.9 cm. The profile of trapped magnetic field resulting from induced current was modeled in order to assess its effect on the uniformity of an NMR magnet     

选频~(14)CO_2-~(12)CO_2同位素激光器

我们研制了一台~(14)CO_2-~(12)CO_2同位素激光器,测量到激光谱线80条,其中40条是~(14)CO_200°1-(10°0,02°0)_I带的激光跃迁谱线,强线输出功率达4.0W以上;实验还观察到同位素的竞争效应,发现即使~(14)CO_2成份低于~(12)CO_2,其激光辐射仍占优势.     

Layered Al2O3-TiO2 compositedielectric resonators

Aluminium oxide displays a very low tanδ at microwave frequencies. It also possesses a remarkably high thermal conductivity, ideal for heat dissipation in high power satellite filters. However, its temperature coefficient of the resonant frequency (τ_f) is approximately 60 ppm/K. It is shown that the application of a film of titanium oxide which has a T_f of opposite sign (45O ppm/K) produces a composite in which the τ_f can be tuned to be zero over a wide temperature range. The tanδ of the composite at zero T_f is 3.3×10⁵ (Q=30000) at room temperature and at 10 GHz     

Characterization of the annealing impact on La2O3/HfO2 and HfO2/La2O3 stacks for MOS applications

The impact of various rapid thermal annealing used during the integration on the La₂O₃/HfO₂ and HfO₂/La₂O₃ stacks deposited by Atomic Layer deposition was analyzed. The consequences of lanthanum localization in such stacks on the evolution of the films during the rapid thermal annealing are investigated in term of morphology, crystalline structure, silicate formation and film homogeneity as a function of the depth. It appeared that the La₂O₃ location has an impact on the temperature of the quadratic phase formation which could be linked to the formation of SiOHfLa silicate and the resistance of the films to dissolution in HF 0.05 wt%.     

Low Rayleigh scatteringP2O5-F-SiO2 glasses

The Rayleigh scattering and infrared absorption losses of P₂ O₅-F-doped silica glass, which is a candidate material for ultra-low-loss optical fiber, were investigated experimentally. The Rayleigh scattering loss of 8.5 wt.% P₂O₅ and 0.3 wt.% F-doped SiO₂ glass is found to be 0.8 times that of pure silica glass. It is also found that the infrared absorption property of P₂O₅-F-SiO₂ glass is almost the same as that of pure silica glass. The minimum loss for the proposed composition is estimated to be 0.11 dB/km at 1.55 μm wavelength, and 0.21 dB/km at 1.3 μm wavelength     

Low-loss polyimide-Ta2O5-SiO2hybrid ARROW waveguides

A low-loss polyimide-Ta₂O₅-SiO₂ hybrid antiresonant reflecting optical waveguide (ARROW) is presented. The ARROW device was fabricated using both the organic and dielectric thin-film technologies. It consists of the fluorinated polyimide, tantalum pentoxide (Ta₂O₅), and silicon dioxide (SiO₂) hybrid layers deposited on a Si substrate. For transverse electric polarized light, the propagation loss of the waveguide as low as 0.4 dB/cm was obtained at 1.31 μm. The propagation loss for transverse magnetic polarized light is 1.5 dB/cm. An ARROW waveguide fabricated using the polyimide-Ta₂O₅ -polyimide material system is also presented for comparison