直线导轨四自由度同时测量方法的研究

提出了一种基于半导体激光单模光纤组件同时测量直线导轨四自由度误差的新方法。以单一准直的激光束作为测量基准,用角锥棱镜和分光器分别作为直线度误差、角度误差测量的敏感器件,实现了水平和竖直方向直线度及俯仰角、偏摆角四个自由度误差的同时测量。分析了系统的测量原理,进行了稳定性、重复性以及与美国API 5D测量系统比对实验,理论分析和实验结果表明,系统测量直线度的分辨率小于0.1μm,角度的分辨率小于0.5″,在测量距离为2 m的条件下,直线度、角度测量精度分别为±1.0μm/m,±0.5″。测量方法具有结构简单、移动部分不带电缆和现场测量方便等优点。     

锥体棱镜角度测量误差分析与仿真

锥体棱镜应用广泛,但其二面角偏差没能实现测量的自动化.锥体棱镜二面角偏差的测量主要由二面角自身的误差、锥体棱镜面形误差等决定,分析了锥体棱镜的二面角偏差和干涉波面的关系,并对二面角偏差计算进行模拟仿真,模拟了锥体棱镜只有角度误差和角度误差、面形误差都存在这两种情况下的二面角偏差的计算,验证了程序的正确性,得到程序计算锥体棱镜二面角偏差的误差在0.3″范围内.     

利用全反射原理精确测量棱镜折射率

依据全反射原理和自准直测角法,实现了对棱镜折射率的精确测量。通过使用高准直半导体激光器将激光入射到棱镜内部与空气分界面上,逐步旋转棱镜或改变棱镜的入射角,得到待测棱镜的反射光强随入射角变化曲线。在曲线左侧收尾处出现一个台阶,其反射光强随入射角增大迅速衰减。全反射临界点,对应的入射角为全反射角。用两次自准直测角法精确测量棱镜底角。通过该方法,分别对两块不同棱镜的折射率进行了测量,测量棱镜折射率精度为±1.24×10-4。     

直线导轨二维转角同时测量装置的研制

提出了一种同时测量直线导轨二维转角的简单方法。基于半导体激光器（LD）、单模光纤组件的激光基准,建立了直线导轨运动副二维转角相关测量模型。分析了俯仰角、偏摆角的误差分离和实时测量原理。通过稳定性、重复性和比对实验验证了所提系统的可靠性。实验结果表明,系统测角分辨率优于0．5″。     

车载光电经纬仪的测量误差修正

为了降低载车平台变形对经纬仪测角精度的影响,补偿较大变形产生的测角误差,实现活动站测量,分析了平台变形对光电经纬仪测角误差影响的基本原理,利用一套激光自准直式的非接触测量装置测量出因平台变形而导致的经纬仪方位旋转轴线的倾斜角及倾斜方向,通过时统终端与经纬仪望远系统同时记录测角数据及倾斜数据,从而对测角误差进行修正。该方法精度高、实时性强,能够补偿±0.7°范围内平台变形而带来的测角误差,测量装置误差在20″内。为实现高精度车载光电测量提供了一种有效的途径。     

基于干涉原理的高精度直线度误差测量

将空气劈尖产生的等厚干涉与CCD图像处理技术相结合,提出了一种测量连续空间直线度误差的新方法。此方法利用待测工件的直线度误差改变空气劈尖顶角,并用一元线性回归方法对CCD的像元序号与所接收到的干涉条纹光强极值序号之间线性关系进行拟合,进而确定出空气劈尖顶角大小。由导出的直线度误差与空气劈尖顶角之间的关系,用最小包容区域法对工件的直线度误差进行了评定,评定结果为8.11±0.62μm。测量结果表明,新的测量方法是可行的,而且测量系统具有精度高、应用范围广的特点,也可应用到锥角、圆度误差等其他几何量的精密测量中。     

激光辐射发散角的全景测量仪

本仪器是专用于测量广角激光辐射发散度和目视功率按光束截面分布的指示仪器。利用角共振滤光片测量激光辐射的发散角。滤光片由两块玻璃棱镜组成，棱镜的对角边用空气隙分开。     

检验平行度和棱镜角的干涉方法

给出了快而方便地检验光学元件的例子：玻璃块的平行度、波洛棱镜的90°角误褰和棱镜的尖塔差和直角棱镜45°角的误差。用氦-氖激光源，而以待测元件充当干涉仪。     

基于莫尔条纹的自准直测角方法研究

提出了一种基于莫尔条纹的自准直测角方法.该方法将成像式光栅方法、基于莫尔条纹的扭转测量技术、自准直测角技术相结合,利用标尺光栅像和指示光栅形成的光栅副夹角变化所引起的莫尔条纹宽度变化来反映平台棱镜的角度变化,建立了平台棱镜旋转角度、光栅栅线夹角及莫尔条纹宽度之间的关系式.有别于传统莫尔条纹的计数处理,通过图像处理获得了莫尔条纹宽度信息.实验结果表明,该系统接收到的莫尔条纹对比度清晰,满足莫尔条纹图像处理的要求,在±7′范围内,与0.2″自准直仪的比对误差在0.2″以内.     

激光测定

用激光干涉测长仪测量长度和位移时产生误差的因素很多，必须引以注意。激光测长是用图1所示的光学系统以干涉条纹计数的方式进行的。由He-Ne激光器发出的激光束射向分束棱镜，把光束分为直线前进的和与原光轴成直角的两部分，分别射向直角棱镜。由直角棱镜反射后再返回分束棱镜,产生干涉,最后射向激光头中的光探测器。     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.