Structure and dielectric properties of Cu and (K,Na) doped SrBi2Nb2O9 ferroelectric ceramics

Ferroelectric ceramics, SrBi₂Nb₂O₉ (SBN), Sr_0.8Cu_0.2Bi₂Nb₂O₉ (SCBN) and Sr_0.8K_0.1Na_0.1Bi₂Nb₂O₉ (SKNBN) were prepared by a solid state reaction process. X-ray diffraction analysis shows that the alkali and Cu almost diffuse into the SBN lattice to form a solid solution during sintering and some slight secondary phases was detected. The effect of alkali and Cu on dielectric properties of the SBN ceramics was discussed. The dielectric loss factor of (K,Na) doped SBN ceramics degraded considerably to 0.01 and their frequency and temperature stabilities were enhanced. The dielectric constant was enhanced by approximately 60% and the Curie temperature (Tc) was also improved for Cu doped SrBi₂Nb₂O₉ ceramics.     

Piezoelectric and ferroelectric properties of new Pb9Ce2Ti12O36 and lead-free Ba2NdTi2Nb3O15 ceramics

In this paper, measurements of the nonlinear ferroelectric, piezoelectric and dielectric properties of Pb₉Ce₂Ti₁₂O₃₆ (Pb₉CTO) and Ba₂NdTi₂Nb₃O₁₅ (BNTN) ferroelectric ceramics are presented. Hysteresis P(E) loops were measured as a function of applied electric field, frequency and temperature. The coercive field (E _c) and remnant polarization (P _r) displayed temperature and frequency dependence. Lead-free BNTN ceramics exhibited a coercive field E _c?>?2.4 kV mm^?1 and a piezoelectric coefficient d ₃₃?=?2 pC N^?1. The hysteresis loop was pinched above 110°C and a linear response was observed at 155°C, typical of a paraelectric material. Pb₉CTO was shown to be ferroelectric with coercive field E _c?=?1.2 kV mm^?1 and a d ₃₃?=?65 pC N^?1. The frequency dependences of the impedance of the Pb₉CTO discs were analyzed.     

Epitaxial growth of multilayered (Bi,La)4Ti3O12/Pb(Zr,Ti)O3 ferroelectric thin films with different orientations

Epitaxial (Bi,La)₄Ti₃O₁₂ (BLT) thin films, epitaxial Pb(Zr,Ti)O₃ (PZT) thin films, and epitaxial multilayered BLT/PZT ferroelectric thin films with different orientations were prepared on SrTiO₃ (STO) single crystal substrates by pulsed laser deposition. From X-ray pole-figures and electron diffraction patterns, the epitaxial orientation relationships between BLT layers, PZT layers, and STO substrates were identified to be (1) BLT(001)//PZT(001)//STO(001), and BLT[110]//PZT[100]//STO[100] for the multilayered thin films on (001)-oriented STO substrates, and (2) BLT(118)//PZT(011)//STO(011), and $ {\text{BLT}}{\left[ {\overline{1} \overline{1} 0} \right]}//{\text{PZT}}{\left[ {100} \right]}//{\text{SrTiO}}_{3} {\left[ {100} \right]} $ for the multilayered films on (011)-oriented STO substrates. Tri-layered films of the same compositions showed well-defined hysteresis loops as well as a high fatigue resistance up to 1?×?10¹⁰ switching cycles.     

Pulse width dependent polarizations of ferroelectric (Pb,La)(Zr,Ti)O3 thin film capacitors

Abstract

We report the measurements of pulse polarizations of (Pb, La)(Zr, Ti)O₃ ferroelectric capacitors as a function of pulse width. Pulse polarizations were measured from the switching current responses in the pulse width range from 1 μs to 1 s. The relation between pulse polarizations(switched(P?) and non-switched polarization(P?)) and hysteresis loop parameters was studied. In the case of all write/read pulse widths are same, P? increased but P? decreased with increasing pulse width. These results are explained by poling effects and confirmed by measuring pulse width dependencies with different patterns of pulse trains.     

尖晶石型LiMn2O4陶瓷的制备及其电导率

为研究尖晶石型LiMn2O4正极材料的导电性能,用无压、热压和等离子放电烧结的方法制备出了LiMn2O4陶瓷块体,用X射线衍射(XRD)、扫描电子显微镜(SEM)和交流阻抗谱研究了产物的物相、显微结构和电导率。结果发现,在高温或低氧浓度的烧结条件下LiMn2O4发生脱氧,分解生成LiMnO2和Mn3O4。通过埋粉工艺可以有效地抑制脱氧,提高LiMn2O4的烧结温度。等离子放电烧结可使坯体迅速达到致密,抑制晶格脱氧和晶粒长大。尖晶石型LiMn2O4的电导率由晶界电导控制,晶粒大小对电导率的影响很大。     

Dielectric,ferroelectric and ferromagnetic properties of x Ni0.8Zn0.2Fe2O4-(1-x) Pb0.99La0.02Zr0.65Ti0.35O3 composites

For the present study, two phase ceramic (ferroelectric-ferrite) composites using La substituted lead zirconate titanate (PLZT) and Ni-Zn ferrite (NZF) with compositional formula x Ni_0.8Zn_0.2Fe₂O₄-(1-x) Pb_0.99La_0.02Zr_0.65Ti_0.35O₃ (x?=?0, 0.05, 0.10 and 0.15) were synthesized by conventional solid state reaction route. From X-ray analysis, it was confirmed that no chemical reaction took place between individual phases. Dielectric properties were studied as a function of temperature and frequency. Decrease in dielectric constant and increase in dielectric loss was observed with increasing ferrite content. Anomalous behavior in paraelectric region was observed for all the composite samples (x?=?0.05, 0.10 and 0.15) at low frequencies. To study ferroelectric and ferromagnetic properties, P-E and M-H hysteresis loops were recorded respectively. Effect of electric field on magnetization was studied for all composite samples to confirm magnetoelectric coupling.     

High dielectric permittivity of SrBi2Nb2O9(SBN) added Bi2O3 and La2O3

In this paper, the structural and dielectric properties of SrBi₂Nb₂O₉ (SBN) as a function of Bi₂O₃ or La₂O₃ addition level in the radio (RF) and microwave frequencies were investigated. The SBN, were prepared by using a new procedure in the solid-state reaction method with the addition of 3; 5; 10 and 15 wt.% of Bi₂O₃ or La₂O_3. A single orthorhombic phase was formed after calcination at 900 °C for 2 h. The analysis by x-ray diffraction (XRD) using the Rietveld refinement confirmed the formation of single-phase compound with a crystal structure (a?=?5.5129 Å, b?=?5.5183 Å and c?=?25.0819 Å; α?=?β?=?γ?=?90°). Scanning Electron Microscope (SEM) micrograph of the material shows globular morphologies (nearly spherical) of grains throughout the surface of the samples. The Curie temperature found for the undoped sample was about 400 °C, with additions of Bi³⁺, the temperature decreases and with additions of La³⁺ the Curie temperature increased significantly above 450 °C. In the measurements of the dielectric properties of SBN at room temperature, one observe that at 10 MHz the highest values of permittivity was observed for SBN5LaP (5%La₂O₃) with values of 116,71 and the lower loss (0.0057) was obtained for SBN15LaP (15%La₂O₃). In the microwave frequency region, Bi₂O₃ added samples have shown higher dielectric permittivity than La₂O₃ added samples, we highlight the SBN15BiG (15 % Bi₂O₃) with the highest dielectric permittivity of 70.32 (3.4 GHz). The dielectric permittivity values are in the range of 28–71 and dielectric losses are of the order of 10^?2. The samples were investigated for possible applications in RF and microwave components.     

Composition-dependent dielectric properties and energy storage performance of (Pb,La)(Zr,Sn,Ti)O3 antiferroelectric ceramics

In this work, Pb_0.97La_0.02(Zr _x Sn_0.95?x Ti_0.05)O₃ (PLZST) (0.5?<?x?<?0.9) tetragonal antiferroelectric (AFE_T) and orthogonal antiferroelectric (AFE_O) ceramics were successfully fabricated by screen printing process. The ceramic materials were in thick-film form bonded with a small amount of glass. The electric field up to 400 kV/cm was presented for antiferroelectric ceramics. Besides, in order to reduce the energy loss of ceramics, the effects of Sn content and temperature on the dielectric properties and energy storage performance of AFE ceramics were investigated. With the increase of Sn content, the forward threshold electric field (E _AF) and backward threshold field (E _FA) decreased and the energy storage density increased obviously. The maximum energy storage density of 5.6 J/cm³ (30 °C) and 4.7 J/cm³ (120 °C) with corresponding energy efficiency of 67 % and 73 % were obtained in Pb_0.97La_0.02(Zr_0.5Sn_0.45Ti_0.05)O₃ ceramic, which makes this material a promising potential application in capacitors for pulsed power systems.     

Structural,ferroelectric and magnetic properties of BiFeO3-ZnFe2O4 nano-composites

ABSTRACT

Multiferroic BiFeO₃-ZnFeO₃ nano-composites in different composition were prepared by sol-gel method. Detailed investigations were made on the structural, magnetic and ferroelectric properties of these nanocomposites. The X-Ray Diffraction (XRD) pattern confirms the formation of distorted perovskite and spinel phases of BiFeO₃ and ZnFe₂O₄ respectively. Transmission Electron microscopy reveals the particle size and the elemental idea of pure ferrites. The particle sizes calculated using TEM of ZnFe₂O₄ is 20–30 nm and match with XRD result. An enhancement of polarization in nano-composites is observed from Polarization Vs Electric Field loops. Magnetic polarization versus Magnetic field curves indicates the improved magnetic properties.     

Structural and Multiferroic Properties of Bi3.4La0.6Ti3O12/CoFe2O4 Composite Thin Films

Bi_3.4La_0.6Ti₃O₁₂ and CoFe₂O₄ were synthesized by chemical solution route, and Bi_3.4La_0.6Ti₃O₁₂/CoFe₂O₄ multilayers were deposited by spin coating on Pt substrate. X-ray diffraction of multilayer structures reveals composite-like polycrystalline film. Leakage current is less than 10^?5 A at electric field < 90 KV/cm and follows the Ohmic behavior. Dielectric response shows relaxation and the loss (tan δ) is below 3% at 10⁶ Hz. Room temperature ferrroelectric polarization (P_r) = 20.2 μC/cm² and ferromagnetic memory (M_r) = 46.5 emu/cm³ has been obtained. Co-existence of FE and FM response can be attributed to stress and different permeability and permittivity involved in multilayer structures.     

Dielectric and relaxor ferroelectric properties of Ba-doped Pb(Zr,Ti)O3 ceramics

(Pb,Ba)(Zr,Ti)O₃ is a relaxor ferroelectric material. Dielectric and ferroelectric properties of (Pb_1-x Ba _x )(Zr_0.70Ti_0.30)O₃ ceramics have been investigated for compositions varying in the range of 0.20?≤?x?≤?0.30. Reagent grade PbO, ZrO₂, TiO₂ and BaCO₃ raw powders were used, ceramics were fabricated by convenient solid state reaction. The experimental results show that the substitution of Ba for Pb can enhance the ferroelectric relaxor characteristics. With the Ba content increasing, the electric hysteresis was narrowed and the polarization was reduced. Meanwhile the temperature T _m that corresponding to the maximal dielectric constant was decreased. It has also been found that the hydrostatic pressure may cause the phase transition more diffuse and move T _m to higher temperature.     

Structure of sol-gel prepared ferroelectric Bi3.4La0.6Ti3O12

The Bi_3.4La_0.6Ti₃O₁₂ (BLT) thin film and powder have been prepared by a sol-gel method with annealing at 700^°C. Randomly oriented BLT thin film exhibits a large remanent polarization, 2P _r = 72 μC/cm², with a dc applied field strength of 320 kV/cm. Structure of sol-gel derived BLT powder has been investigated by neutron scatterings, and refined by a Rietveld method resulting a reasonable goodness of fit (wR _p = 6.7%, and R _p = 5.7%) using an orthorhombic (B2cb, a = 5.4221 Å, b = 5.4032 Å, and c = 32.8361 Å). Two different TiO₆ octahedra exhibit different polarization directions; (100) from Ti(1)O₆, and (011) from Ti(2)O₆, which explains the observed large 2P _r of the randomly oriented BLT thin film.     

Low-temperature sintering and microwave dielectric properties of Mg4Nb2O9 ceramics

The effects of V₂O₅ and Li₂CO₃ on the sinterability and microwave dielectric properties of Mg₄Nb₂O₉ (MN) ceramics were investigated. With addition of 1.5wt% V₂O₅, the dielectric constant (?) and Q·? value of MN ceramics sintered at 1,000 °C are comparable to those of pure MN sintered at 1,400 °C. The good results are because of the enhancement of the density by liquid sintering at the lower temperatures. With the mixtures of V₂O₅ and Li₂CO₃, the sintering temperature of MN was further reduced to 925 °C at the expense of the quality factor (Q·?) value. Typically, ? of 13.7 and Q·? value of 78,000 GHz were obtained for the specimens with mixtures of 1.5wt% V₂O₅ and 1.5wt% Li₂CO₃ and sintered at 925 °C for 5 h.     

Positron annihilation studies of vacancy related defects in ceramic and thin film Pb(Zr,Ti)O3 materials

Abstract

Preliminary positron annihilation studies of ceramic and thin film Pb(Zr,Ti)O₃ (PZT) materials have been completed. The aim of this work was to examine the effects of processing conditions on vacancy related defects. Positron lifetime measurements on bulk PLZT plates showed an increase in positron trapping to a defect state with increasing grain size consistent with trapping to lead vacancy related defects formed through lead oxide loss during processing. Variable energy positron beam measurements were completed on bulk PLZT plates, sol-gel PZT thin films and laser ablated PLZT thin films. Films processed in a reduced oxygen atmosphere were found to give a higher S-parameter, due to an increase in concentration of neutral or negatively charged vacancy type defects, compared with material processed in an oxidizing ambient.     

Metalorganic chemical vapor deposition of ferroelectric Pb(Zr,Ti)O3 thin films

Abstract

The controllability of PZT film properties and the possibility of the scaling up the MOCVD to the commercial based production were briefly reviewed. The film composition and crystalline phase of the PZT films were easily controlled using the MOCVD process. The electrical properties were also controlled by changing the growth parameters. A low processing temperature was achieved using a new Pb precursor, tryethyl n-pentoxy lead. Large area growth of PZT and PLZT films on a 6–8 inch wafer was also achieved.     

Structure and ferroelectric property of Nb-doped SrBi4Ti4O15 ceramics

Nb-doped SrBi₄Ti₄O₁₅ (SBT) was produced by conventional method. Structural and ferroelectric properties of SBT were examined as a function of niobium composition. Analyzing the structure futures of SBT by XRD, XPS and Raman spectrum, Nb⁵⁺ substituted Ti⁴⁺ to form NbO₆ octahedron and did not change the structure of SBT. The XRD patterns indicated the formation of the single phase of SBT for x = 0.01and 0.03 and secondary phase of Sr₃Ti₂O₇ appeared when x > 0.1. To compare the effect of Nb doping, the ferroelectric properties (hysteresis loop, piezoelectric coefficient) of Nb-doped SBT were measured. The SBT doped with x = 0.15 was found to exhibit higher remanent polarization with d ₃₃ = 17 pC/N.     

FERROELECTRIC,PIEZOELECTRIC AND DIELECTRIC PROPERTIES OF Nb MODIFIED Bi4Ti3O12-SrBi4Ti4O15 INTERGROWTH

ABSTRACT

Doping and constructing intergrowth are found to be an effectual approach to modify the electrical properties of bismuth layer-structured ferroelectrics. In this work, ferroelectric, piezoelectric and dielectric properties of Nb-doped Bi₄Ti₃O₁₂-SrBi₄Ti₄O₁₅ (BTN-SBTN-x) intergrowth ceramics were investigated. The ferroelectric property of Bi₄Ti₃O₁₂-SrBi₄Ti₄O₁₅ was improved by niobium doping. The remanent polarization (2P _r ) increases at first, then decreases with the increase of niobium content, while the coercive field changes little with Nb-doping. As niobium content is 0.06, the 2P _r maximizes at a value of 34.9 μC/cm², which is increased by about 75% in comparison with that of Bi₄Ti₃O₁₂-SrBi₄Ti₄O₁₅ (2P _r = 20.0 μC/cm²). The Curie temperature of the samples varies hardly upon Nb-doping, which indicates that the good thermal stability of Bi₄Ti₃O₁₂-SrBi₄Ti₄O₁₅ is not deteriorated after Nb addition. Piezoelectric coefficient d₃₃ was increased from 9.3 pC·N^?1 to 18.6 pC·N^?1 due to the enlargement of 2P _r .     

Structural,electrical, and magnetic properties of mullite-type Bi2Fe4O9 ceramic

Journal of Electroceramics - In this work, the synthesis results are reported, and the structural, electrical and magnetic properties of orthorhombic (Pbam) structured bulk Bi2Fe4O9 synthesized...     

The bulk photovoltaic effect in ferroelectric Pb(Zr,Ti)O3 thin films

Abstract

The bulk photovoltaic effect (BPE) has been investigated in lead zirconate titanate (PZT) thin films. Measurements of the kinetics, spectral distribution and photocurrent hysteresis loops have been made. In the extrinsic spectral region, the steady-state photocurrent is primarily due to the BPE, where the photovoltaic tensor component has been determined to be G₃₁ = 10_?9 cm/V. However, in the intrinsic region, the BPE has not been determined due to the strong contribution from photoinjection currents. Finally, it is shown that the BPE may be the driving force for photoinduced hysteresis changes in PZT thin films, particularly in the extrinsic spectral region.     

Fabrication and dielectric properties of Na0.5Bi0.5Cu3Ti4O12 from co-precipitation method

High dielectric Na_0.5Bi_0.5Cu₃Ti₄O₁₂ (NBCTO) ceramics were firstly prepared by co-precipitation method at low temperature. X-ray diffraction results revealed that pure phase of NBCTO was achieved by calcination at 950 °C for 2 h. Thermo-gravimetric analysis on a dried NBCTO precursor was carried out to study the thermal decomposition process. The microstructure and dielectric properties of NBCTO ceramics sintered at different temperatures were investigated. The results indicate that the sintering temperature has a sensitive influence on the microstructure and dielectric properties. Higher sintering temperature gave rise to increased dielectric constant and dielectric loss of NBCTO samples, and the sample sintered at 975 °C for 8 h exhibits high dielectric constant of 8.3?×?10³ and low dielectric loss of 0.069 at 10 kHz. The dielectric properties were further discussed by the impedance spectroscopy.