Circularly polarized spin current assisted fast resonant switching in magnetic tunnel junctions with perpendicular anisotropy

We propose a mechanism to substantially enhance spin transfer torque induced switching in perpendicular anisotropy magnetic tunnel junctions. Our method is based on injecting an additional assisting DC current with circular spin polarization into a magnetic free layer at frequencies that are resonant with its normal ferromagnetic resonance frequencies. We observe 80 % reduction in switching delays at constant switching currents and 2× improvement in critical switching current density. Spin current polarization chirality and spin polarization efficiency dependencies are investigated. Further, a device structure to experimentally realize the mechanism proposed in this letter is presented.     

An electron's spin--Part II

In Part I of this article, we introduced the notion of encoding binary bit information in the spin polarization of a single electron confined in a quantum dot and placed in a magnetic field. The spin polarization becomes bistable in a magnetic field and the spin can point either parallel to the field or antiparallel to it. These two polarizations encode the classical binary bits 0 and 1. We showed that since the bits can be switched by simply flipping the electron's spin without physically moving the electron in space and causing a current, the energy dissipated during the bit flip operation could be made very small. In Part II we discuss the notion of using a single electron's spin as a quantum bit (or qubit) that represents information in quantum computers. Just as spin is superior to charge as a vehicle to host classical bit information in classical computers it turns out that spin is superior to charge to host quantum information as well. That is why spin-based quantum information processing is gradually becoming the staple of scalable solid state versions of quantum computers.     

铁磁/重金属双层膜结构中电流驱动的铁磁共振

在理论上研究了具有垂直磁各向异性铁磁/重金属双层膜结构中电流驱动的铁磁共振。通过线性展开包含自旋霍尔效应自旋矩项的Landau-Lifshitz-Gilbert方程,获得了交流电流频率和直流电流密度调节的铁磁共振谱。发现平衡位置、共振位置和共振线宽都可以通过改变直流电流密度和外磁场的大小进行调节。联合自旋霍尔效应感应的交流和直流自旋矩,可以减小电流感应磁矩反转的临界电流密度。     

Micro-structure and ferroelectric properties of BiFeO3 thin films formed on Pt-coated r-plane sapphire substrates

Magnetoelectric BiFeO₃ (BFO) materials exhibit ferroelectric and ferromagnetic properties simultaneously, therefore they have a potential to be applied in magnetic as well as ferroelectric devices. BFO thin films were formed by depositing sol-gel solutions on Pt-coated r-plane sapphire dielectric substrates. We did not observe any secondary phase such as Bi₂Fe₄O₉ on the r-plane sapphire substrates, which is generally observed on Si substrates. We observed small ferroelectric grains of about 0.1 μm on Pt/sapphire structures. The leakage current density in BFO films was found to be decreased dramatically after optimizing process conditions of stoichiometric BFO chemical solution. The leakage current densities were in the range of 10^{− 7} A/cm² at room temperature and 10^{− 9} A/cm² at 80 K under 0.4 MV/cm applied electric field. The main reason for low leakage current is considered to be reduction of oxygen vacancies due to the presence of exclusive Fe^{3 +} valance state in the films. An applied electric field higher than 0.5 MV/cm was required to pole the BFO films, which made it difficult to obtain the saturated polarization at room temperature. We could measure the saturated remanent polarization in the BFO films at 80 K and the obtained remanent polarization was 100 μC/cm².     

考虑附加涡流损失的超磁致伸缩执行器动态模型

超磁致伸缩执行器在高频下工作时,能量损失不仅包括磁滞损失、Terfenol-D棒涡流损失,还包括Terfenol-D棒附加涡流损失。该文考虑到执行器的惯性、阻尼、Terfenol-D棒涡流损失及附加涡流损失,建立了超磁致伸缩执行器的动态模型。其磁滞特性由Berqvist和Engdahl磁滞模型来描述,材料非线性由输入到模型静态实验数据体现。模型求解使用有限差分方法,在Matlab/Simulink中建立相应模型仿真结构框图。对执行器不同工作频率情况进行模型的仿真计算,并与实验结果对比,发现模型与实验吻合较好。表明所建立动态模型能较好地描述执行器输出位移与驱动电流之间的关系。该模型对优化设计超磁致伸缩执行器有指导意义。     

基于对偶性原理的三相多芯柱变压器暂态模型

提出了一种基于对偶性原理的三相多芯柱变压器暂态模型；通过分析三相多芯柱变压器磁路模型并应用对偶性原理，建立了考虑电路与磁路耦合的变压器暂态计算模型，采用Jiles-Atherton铁磁磁滞模型来描述铁心模块的饱和以及磁滞效应，而涡流和杂散损耗用一个等值电阻替代，零序磁通用一个线性电感以及反映其涡流损耗的电阻代替；该模型可以计算分析直流偏磁和空载合闸等情况下变压器励磁电流以及铁心磁通等电气参数；算例分析结果与实验结果的对比证明了该模型的准确性。     

Calculation of a Valve Magnetic System of Maximum Current Release of a Circuit Breaker

Circuit breakers are one of the most widespread electrical devices in control and distribution systems that use electric energy fluxes, providing protection from short circuits and current overloads. First and foremost, circuit breakers should provide a high operation speed at shutdown, which can be achieved with low weight and significant electromagnetic forces. For approximate determination of magnetic system dimensions, network analysis methods are used. In addition, the model of magnetic field structure can be substantially simplified. The conductivity of air gaps between the ferromagnetic elements of a magnetic system can be described by a modified method of probable paths of magnetic flux, and the resistance of ferromagnetic elements (magnetic potential drop) is taken into account by means of a mathematically expressed magnetization curve (for steel of 10895 grade).     

Stabilization of Ferromagnetism in Co Codoped ZnO:N

First principle calculations were performed to study room temperature ferromagnetism in N doped ZnO (ZnO:N) using spin density functional theory. Substitution of O by N in ZnO results in spin polarized state exhibiting half metallic ferromagnetic characteristics. Each N dopant introduces magnetic moment of 1.0 μ_B/supercell, which is from 2p electrons of N but the magnetization energy (ΔE = 14.42 meV) is too small to stabilize ferromagnetism at room temperature. Cobalt (Co) co-doping in ZnO:N is found to enhance ferromagnetism (magnetic moment = 4.24 μ_B/supercell) with enhanced stability (ΔE = 635 meV) and is driven by hybridization between N 2p and Co 3d states.     

Spin filtering in a $$\updelta $$-magnetic-barrier nanostructure modulated by Rashba and Dresselhaus spin–orbit couplings

We theoretically investigated the electron-spin transport properties of an antiparallel double \(\updelta \)-magnetic-barrier nanostructure modulated by spin–orbit coupling (SOC), which could be fabricated experimentally by depositing two ferromagnetic stripes with horizontal magnetization on the top and bottom of an InAs/Al\(_{x}\)In\(_{1-x}\)As semiconductor heterostructure. Both Rashba and Dresselhaus SOCs were taken into account, and the transmission coefficient, conductance, and spin polarization calculated analytically by means of the improved transfer matrix method. The electron-spin transport through this nanosystem is found to be strongly dependent on the SOC. The electron-spin polarization is also found to vary with the strength of the SOC, potentially enabling tunable spin filters for use in spintronic applications.     

基于电路-磁路耦合的感应型滤波换流变压器仿真与验证

感应型滤波换流变压器是一种利用变压器耦合绕组的安匝平衡作为滤波机理的变压器,为了研究其内部磁通链的耦合关系,建立电路-磁路模型很有必要。以绕组的连接方式为基础,建立了电路和电磁感应模型,以铁芯和绕组的空间几何结构为基础,考虑铁磁材料中的涡流效应,建立了磁路模型。铁芯的非线性磁阻用集总参数模型表示,并用微粒群优化(PSO)算法进行优化,最后以感应型滤波换流变压器的实际设计参数为依据,对感应型滤波换流变压器的滤波绕组接入滤波器前后的一次绕组电流和励磁电流进行了仿真对比。动模实验验证了所建模型的正确性与准确性。所建模型为感应型滤波换流变压器的阻抗设计提供了理论依据,并对正确分析感应型滤波换流变压器的运行性能具有重要意义。     

变压器直流偏磁的仿真研究及限制措施

对高压直流输电系统接地极电流对中性点接地变压器的影响进行了研究。以实际工程中广泛应用的Jiles-Atherton铁磁磁滞原理为基础建立变压器模型进行电力变压器直流偏磁的仿真研究,结果较好地反映了励磁电流波形和幅值的变化对变压器的不利影响;提出了在变压器中性线串联电容器并设置其旁路电路等措施,分析说明该措施能有效地限制直流偏磁现象。文中介绍的模型和措施可分析处理变压器直流偏磁导致的铁耗、铜耗以及噪声增大等问题,实例的仿真结果证明了该方法的正确性。     

电力变压器磁屏蔽模型涡流场和损耗的计算与测量

大型电力变压器铁磁结构件中产生的电磁损耗会导致局部过热并使相关的绝缘部件受到损害,进而危及整个变压器的正常运行,对面向工程的国际TEAM(Testing Electromagnetic Analysis Methods)Problem 21的磁屏蔽基准模型的涡流场和损耗进行了计算和试验测量研究,考虑了模型中铁磁材料的非线性、各向异性及磁滞等特性,提出了用于分离激励线圈电阻损耗和涡流损耗的测量方法(漏磁通补偿线圈测量装置),并用MagNet软件进行了数值计算.基准模型的计算和测量结果相吻合,验证了计算方法和软件的有效性.     

铁磁性材料在抑制GIS高频暂态应用中的仿真分析方法

由铁磁性材料制成的磁环可以有效抑制GIS中VFTO的幅度和陡度,但材料的选型至为关键.基于对材料复磁谱特性的等效描述以及传输线理论的应用,在频域内建立了磁环对VFTO抑制特性的仿真分析模型,利用该仿真模型可以方便地获取各种材料磁环的高频抑制效果.对GIS隔离开关切合空载母线时产生的VFTO仿真表明,本文提出的分析方法是切实可行的,易于实现磁环材料的优化选型,可节省实验费用.     

Modeling Spin-Dependent Transport in InAs/GaSb/AlSb Resonant Tunneling Structures

The Rashba effect resonant tunneling diode is a candidate for achieving spin polarizing under zero magnetic field using only conventional non-magnetic III–V semiconductor heterostructures. We point out the challenges involved based on simple arguments, and offer strategies for overcoming these difficulties. We present modeling results that demonstrate the benefits of the InAs/GaSb/AlSb-based asymmetric resonant interband tunneling diode (a-RITD) for spin filtering applications.     

A simulation study of voltage-assisted low-energy switching of a perpendicular anisotropy ferromagnet on a topological insulator

We present a novel memory device that consists of a thin ferromagnetic layer of Fe deposited on topological insulator thin film, \(\hbox {Bi}_{2}\hbox {Se}_{3}\). The ferromagnetic layer has perpendicular anisotropy, due to MgO deposited on its top surface. When current is passed on the surface of \(\hbox {Bi}_{2}\hbox {Se}_{3}\), the surface of the \(\hbox {Bi}_{2} \hbox {Se}_{3}\) becomes spin polarized and strong exchange interaction occurs between the d electrons in the ferromagnet and the electrons conducting the current on the surface of the \(\hbox {Bi}_{2}\hbox {Se}_{3}\). Part of the current is also shunted through the ferromagnet, which generates spin transfer torque in the ferromagnet. The exchange interaction torque along with voltage-controlled magnetic anisotropy allows ultralow-energy switching of the ferromagnet. We perform micromagnetic simulations and predict switching time of the order of 2.5 ns and switching energy of the order of 0.88fJ for a ferromagnetic bit with thermal stability of \(43\,k_\mathrm{{B}}T\). Such ultralow-energy and high-speed switching of a perpendicular anisotropy ferromagnet on a topological insulator could be utilized for energy-efficient memory design.     

SiC基稀磁半导体材料的研究进展

稀磁半导体材料(DMS)是一种新型的磁性半导体材料,它同时利用了电子的电荷和自旋属性,兼有铁磁性能和半导体性能,在自旋电子器件领域有着重要的研究价值。主要介绍了DMS的发展过程,总结了最近几年SiC基稀磁半导体材料的研究进展,包括制备方法、性质研究和存在的主要问题,并展望了今后的研究方向。     

基于改进等效电路模型的高比能量储能锂电池系统功率状态估计

针对高比能量电池大倍率下的电化学特性特殊性,用传统的等效电路模型(equivalent circuit model, ECM)估计功率状态(state of power,SOP)存在精度较低的问题,提出一种拓展的等效电路模型(extended equivalent circuit model, E-ECM)进行SOP估...     

Light scattering in semiconductor quantum-dot cavity systems

Scattering theory is used to investigate the interaction of a coherent light beam with two distant one-sided semiconductor double micro-cavities. Each cavity contains a single quantum dot charged by one extra electron. The polarization and phase shift of the scattered light is studied as a function of the initial spin state of the two electrons, as well as differences in structural properties of the two cavities. It is shown that the Faraday rotation of the transmitted light is sensitive to electronic and structural properties of the cavities making careful calibration mandatory, when entanglement generation between the electron spin states is to be achieved.     

Mean field approximation and ab initio calculation of magnetic and optical properties of DyN doped with transition metals (TM: V and Cr)

The structural, optical, and magnetic properties of rare earth nitride \(\hbox {Dy}_{0.95}\hbox {TM}_{0.05}\hbox {N}\) (TM: V and Cr) diluted magnetic semiconductors have been investigated using the Korringa–Kohn–Rostoker method combined with the coherent potential approximation. In this work, the effect of GGA–SIC approximations on the electronic properties was investigated in detail. It is revealed from calculating the density of states (DOS) and optical absorption spectra that the ferromagnetic state is stable when TM introduces magnetic moments in \(\hbox {Dy}_{0.95}\hbox {TM}_{0.05}\hbox {N}\) (TM: V and Cr). Using the mean field approximation (MFA), the Curie temperature is determined by the total energy difference per V and Cr atoms between the disorder local moment (DLM) and ferromagnetic (FM) state within the ambient conditions, which becomes more important by increasing the concentration or by co-doping (V, Cr) DyN systems.     

Condition Evaluation for Aging State of Transformer Oil-paper Insulation Based on Time-frequency Domain Dielectric Characteristics

For the oil-impregnated power transformers in service, the condition of the main insulation system is very important. This article reports a non-destructive evaluation technique based on time-frequency domain dielectric characteristics. First, the polarization/depolarization current and frequency-domain spectroscopy were well measured under controlled laboratory conditions. Then, the recovery voltage curves and recovery voltage polarization spectroscopy were also obtained by using the conversion method between polarization/depolarization current and recovery voltage based on the extended Debye model. After that, the time-domain dielectric characteristics, which can represent oil-paper insulation aging, were extracted from the polarization/depolarization current curves, recovery voltage curves and recovery voltage polarization spectroscopy. In addition, the frequency-domain dielectric characteristics, which can represent the oil-paper insulation aging, were also proposed in terms of frequency domain spectroscopy. Finally, the change rules of time-frequency domain dielectric characteristics under different aging times were investigated in depth. Results show that the time-frequency domain dielectric characteristics are sensitive to the aging states of power transformers, which could be utilized to diagnose the aging state of oil-paper insulation in field power transformers.