一种低暗电流高响度InGaAs/InP pin光电探测器

分析了InGaAs/InP pin光电探测器暗电流和响应度的影响因素,并对MOCVD外延工艺以及器件结构进行优化,从而提高器件响应度和降低暗电流。采用低压金属有机化学气相沉积设备(LP-MOCVD)成功制备了InGaAs/InP pin光电探测器,得到了高质量的晶体材料,InGaAs吸收层的背景浓度低于4×1014 cm-3。利用扩Zn工艺制作出感光区直径为70μm的平面光电探测器。测量结果显示,在反偏电压为5 V时,暗电流小于0.05 nA,电容约为0.4 pF。此外,在1 310 nm激光的辐照下,器件的响应度可达0.96 A/W以上。     

SOI波导与InGaAs/InP光电探测器的集成

成熟的CMOS技术可制备无源光学器件,但高效光源和高性能光探测仍需要III~V族半导体材料。综述了近期III~V族外延片与SOI(silicon-on-insulator)波导集成的键合技术,按键合材料的不同分为无机和有机材料键合。着重分析了各种InGaAs/InP光电探测器与SOI波导集成的光耦合方案,并对其优缺点进行对比。同时给出设计的一种倏逝波耦合的InGaAs/InP光电探测器,用时域有限差分(FDTD)法对器件光学特性进行了模拟,以SOI上有机键合的方式,获得95%的探测器吸收效率,表明该SOI波导集成的光电探测器可实现小体积、低损耗及高响应度的光探测,符合片上光互连系统的要求。     

GHz重复频率可调InGaAs/InP单光子探测器

InGaAs/InP雪崩光电二极管（avalanche photodiode APD）可实现近红外波段的单光子检测,具有集成度高功耗低等优势,被广泛应用于量子信息科学、激光测绘、深空通信等领域。通常,为了减小误计数,InGaAs/InP APD工作在门控盖革模式,其门控信号的重复频率直接决定了探测器的工作速率。基于此,采用低通滤波方案,结合集成了GHz正弦门控信号产生、雪崩信号采集、温度控制、偏置电压调节等功能的处理电路,搭建了GHz重复频率可调的高性能InGaAs/InP单光子探测器。GHz门控信号重复频率升高到2 GHz,其相位噪声仍优于-70 dBc/Hz@10 kHz,且尖峰噪声被抑制到热噪声水平,当探测效率为10%时,暗计数仅为2.4×10^-6/门。此外,还验证了该方案下探测器的长时间稳定性,测试了工作速率、偏置电压等对APD关键性能参数的影响,为GHz InGaAs/InP APD的进一步集成及推广奠定基础。     

基于InP/InGaAs HBT技术的单片集成长波长光接收OEIC

采用InP/InGaAs HBT与PIN光探测器单片集成方案,对光接收光电集成电路(OEIC)的外延材料结构和生长、电路设计、制作工艺和性能测试进行了研究.基于自对准InP/InGaAs HBT工艺,实现了1.55μm波长单片集成光接收OEIC.发射极尺寸2μm×8μm的InP/InGaAs HBT直流增益为40,截止频率和最高振荡频率分别为45和54GHz;集成InGaAs PIN光探测器在-5V下响应度为0.45A/W@1.55/μm,暗电流小于10nA,-3dB带宽达到10.6GHz;研制的HBT/PIN单片集成光接收OEIC在2.5和3.0Gb/s速率非归零223-1伪随机码传输工作时可以观察到张开的眼图,灵敏度≤-15.2dBm@BER=10-9.     

基于InP/InGaAs HBT技术的单片集成长波长光接收OEIC

采用InP/InGaAs HBT与PIN光探测器单片集成方案,对光接收光电集成电路(OEIC)的外延材料结构和生长、电路设计、制作工艺和性能测试进行了研究.基于自对准InP/InGaAs HBT工艺,实现了1.55μm波长单片集成光接收OEIC.发射极尺寸2μm×8μm的InP/InGaAs HBT直流增益为40,截止频率和最高振荡频率分别为45和54GHz;集成InGaAs PIN光探测器在-5V下响应度为0.45A/W@1.55/μm,暗电流小于10nA,-3dB带宽达到10.6GHz;研制的HBT/PIN单片集成光接收OEIC在2.5和3.0Gb/s速率非归零223-1伪随机码传输工作时可以观察到张开的眼图,灵敏度≤-15.2dBm@BER=10-9.     

光控菲涅耳波带片扫描天线

描述了基于光生等离子体效应的瞬态毫米波菲涅耳波带片扫描天线的工作原理.模拟计算了高阻硅片在不同激光光强照射下对毫米波的透射率,设计了毫米波在以不同偏离角入射时菲涅耳波带片的结构.分析了激光照射硅片形成不同焦距的波带片时天线的增益性质.实验验证了94 GHz波段天线,测试结果与模拟计算结果吻合得较好.     

阵列菲涅耳波带片波前探测性能研究

在高功率激光系统中,激光束小尺度畸变波前探测是实现激光束中频段波前补偿与控制的重要前提。采用阵列菲涅耳波带片作为激光束波前传感的子孔径分割器,研究其聚焦性能,讨论了波带片的结构如阵列数目和阵列尺寸对波前探测精度的影响。仿真结果表明,选取合适的波带片结构参数可以使小尺度畸变波前的重构误差小于十分之一个波长。为了检测阵列菲涅耳波带片作为波前传感器检测波前畸变的性能,实现小尺度波前畸变检测的目的,构建了激光波前畸变检测光路系统。实验结果表明了阵列菲涅耳波带片检测波前畸变的可行性和准确性.     

探测器中扩散结深对光响应度影响的研究

研究了InGaAs/InP PIN探测器中扩散结深对光响应度的影响,对不同扩散条件下的光电探测器进行了对比实验,测量了不同结深下器件的Ⅰ-Ⅴ特性和光响应度.结果表明:扩散结深对器件的Ⅰ-Ⅴ特性影响不大,而对光响应度影响很大,当结深处在InGaAs吸收层上表面时,光响应度最大值出现在波长1.55um处;而当结深进入衬底InP层后,光响应度最大值则出现在波长1um处.另外,在闭管扩散实验中,严格控制温度和扩散时间是控制结深的关键,研究了不同扩散温度和扩散时间下的结深,为器件的制备提供了参考.     

波长扩展InGaAs探测器的量子效率优化

通过建立双异质结型InGaAs探测器光响应的理论模型,分别对正面和背面进光时InP基波长扩展In0.8Ga0.2As/In0.79Al0.21As PIN探测器结构参数与光响应特性的关系进行了研究,模拟结果与采用GSMBE方法研制器件的实测数据吻合较好.此外,还提出了两种改良的背照射InGaAs探测器结构,并对其光响应特性进行了模拟计算,还基于模拟结果对器件结构参数进行了优化设计.     

空间遥感用InGaAs短波红外探测器

简要比较了短波HgCdTe与InGaAs探测器的性能,介绍了PIN探测器的结构和主要性能指标,综述了InGaAs探测器的研究进展,特别是我国空间遥感用InGaAs的研究进展,并说明了研制空间遥感用InGaAs/InP光电探测器的意义.     

Monolithic integrated waveguide photodetector

An InGaAs photodetector for detection in the 1.0?1.5?m wavelength range has been integrated at the end of and above a ridge waveguide in InP. The waveguides were in n?-InP/n+-InP and had an average propagation loss of 3dB/cm at 1.15?m. The reflection losses were 3dB and the coupling loss was 2dB. The photodetector was an InGaAs photoconductor lattice-matched to InP and exhibited a bias-dependent optical gain of up to 2.5 with a unity-gain quantum efficiency of 49% at 1.15?m. 25% of the guided light was absorbed by the photoconductor. The speed of the photoconductor was found to be bias-dependent, varying from 10 ns to 150 ns rise/fall times.     

一种可对大功率激光信号进行直接检测的新型InGaAs光电探测器

在国内首次介绍了一种新近研制的InGaAs／InP实用化光电探测器，它可在0．5～1.7μm波长对高达500mW的大功率激光进行直接检测，并给出了器件光学衰减滤波片的设计以及器件的主要性能参数。     

Integrated waveguide p-i-n photodetector by MOVPE regrowth

An InGaAs p-i-n photodetector for detection in the 1.0-1.6 µm wavelength range has been integrated at the end of a ridge waveguide in InP using a metal organic vapor phase epitaxial (MOVPE) regrowth technique. The waveguides had an average propagation loss of 3 dB/cm and 95 percent of the guided light was coupled into the photodetector. The photodetector had a 3-dB bandwidth of 1.5 GHz with a pulse response (full width at half maximum) of 80 ps at 1.3-µm wavelength. This is the first demonstration of an efficient, compact, and high-speed monolithic integrated waveguide-photodetector in the InGaAs/InP material system using epitaxial regrowth.     

High performance of Fe:InP/InGaAs metal/semiconductor/metalphotodetectors grown by metalorganic vapor phase epitaxy

An InGaAs metal-semiconductor-metal (MSM) photodetector with an Fe-doped InP Schottky barrier enhancement layer is described. With 5-V bias, the detector has negligible low-frequency gain, a low dark current of 200 nA, a responsivity of 0.3 A/W, and an impulse response with a 1/ e fall time of 65 ps, corresponding to a 3 dB bandwidth of 2.5 GHz. The device layer structure is a very attractive candidate for integration with high-performance InGaAs/InP FETs     

Monolithically integrated long wavelength photoreceiver OEIC based on InP/InGaAs HBT technology

The epitaxial structure and growth, circuit design, fabrication process and characterization are described for the photoreceiver opto-electronic integrated circuit (OEIC) based on the InP/lnGaAs HBT/PIN photodetector integration scheme. A 1.55 μm wavelength monolithically integrated photoreceiver OEIC is demonstrated with self-aligned InP/lnGaAs heterojunction bipolar transistor (HBT) process. The InP/lnGaAs HBT with a 2 μm × 8 μm emitter showed a DC gain of 40, a DC gain cutoff frequency of 45 GHz and a maximum frequency of oscillation of 54 GHz. The integrated InGaAs photodetector exhibited a responsivity of 0.45 AAV at λ = 1.55 μm, a dark current less than 10 nA at a bias of -5 V and a -3 dB bandwidth of 10.6 GHz. Clear and opening eye diagrams were obtained for an NRZ 223-l pseudorandom code at both 2.5 and 3.0 Gbit/s. The sensitivity for a bit error ratio of 10-9 at 2.5 Gbit/s is less than -15.2 dBm.     

Optical properties of Zn-diffused InP layers for the planar-type InGaAs/InP photodetectors

Zn diffusion into InP was carried out ex-situ using a new Zn diffusion technique with zinc phosphorus particles placed around InP materials as zinc source in a semi-closed chamber formed by a modified diffusion furnace.The optical characteristics of the Zn-diffused InP layer for the planar-type InGaAs/InP PIN photodetectors grown by molecular beam epitaxy (MBE) has been investigated by photoluminescence (PL) measurements.The temperature-dependent PL spectrum of Zn-diffused InP samples at different diffusion temperatures showed that band-to-acceptor transition dominates the PL emission,which indicates that Zn was commendably diffused into InP layer as the acceptor.High quality Zn-diffused InP layer with typically smooth surface was obtained at 580 ℃ for 10 min.Furthermore,more interstitial Zn atoms were activated to act as acceptors after a rapid annealing process.Based on the above Zn-diffusion technique,a 50μm planar-type InGaAs/InP PIN photodector device was fabricated and exhibited a low dark current of 7.73 pA under a reverse bias potential of-5 V and a high breakdown voltage of larger than 41 V (I ＜ 10 μA).In addition,a high responsivity of 0.81 A/W at 1.31 μm and 0.97 A/W at 1.55 μm was obtained in the developed PIN photodetector.     

High fmax InP double heterojunction bipolar transistorswith chirped InGaAs/InP superlattice base-collector junction grown byCBE

We report the performance of InP Double Heterojunction Bipolar Transistors (DHBT's) with a chirped InGaAs/InP superlattice B-C junction grown by CBE. The B-C junction of the DHBT was graded with a 10-period InGaAs/InP chirped superlattice (CSL) between the InGaAs base and the lightly doped InP collector. A highly doped thin layer was also included at the end of the CSL to offset the quasi-electric field arising from the grade and suppress further the carrier blocking effect across the B-C heterojunction. The InP/InGaAs CSL DHBT demonstrated a high BV_CEO of 18.3 V with a typical current gain of 55 with minimal carrier blocking up to high current densities. Maximum cutoff frequencies of f_max=146 GHz and f_r=71 GHz were obtained from the fabricated 2×10 μm²-emitter DHBT     

Detuning adjustable multiwavelength MQW-DFB laser array grown byeffective index/quantum energy control selective area MOVPE

A multiwavelength MQW DFB laser array with novel structure Is described. Oscillation wavelength and gain peak wavelength were simultaneously controlled on the same epitaxial wafer by using modulated grown thicknesses of selectively grown InGaAs/InGaAsP/InP MQW active waveguides. The laser array with constant-pitch built-in corrugation fabricated by a simple DFB laser process demonstrated 10.1 nm controllable range for lasing wavelength and 45 nm for gain peak wavelengths, with uniform lasing properties and narrow spectral linewidths. The technique is attractive for light sources used in WDM/FDM applications     

A monolithic 5 Gb/s p-i-n/HBT integrated photoreceiver circuit realized from chemical beam epitaxial material

The authors report on a high performance monolithic photoreceiver fabricated from chemical beam epitaxy (CBE) grown InP/InGaAs heterostructures, incorporating a p-i-n photodetector followed by a transimpedance preamplifier circuit configured from heterojunction bipolar transistors (HBTs). The optoelectronic integrated circuit (OEIC) was fabricated on a semi-insulating Fe-doped InP substrate. Microwave on-wafer measurements of the frequency response of the transistors yielded unity current gain cutoff frequencies of 32 GHz and maximum oscillation frequencies of 28 GHz for collector currents between 2 and 5 mA. The photoreceiver was operated up to 5 Gb/s, at which bit rate a sensitivity of -18.8 dBm was measured at a wavelength of 1.5 mu m. The results demonstrate that the CBE growth technique is suitable for high performance HBT-based OEICs.<>     

Dual spectral InGaAs=InP quantum-well infrared photodetector focal plane array

The realisation of an InGaAs/InP quantum-well infrared photodetector focal plane array imaging device is reported. The long-wave infrared response is based on the intersubband transition (intraband) in the quantum wells. In addition, a near infrared (interband) response is demonstrated. This work shows the potential of the InGaAs/InP materials system for multi-spectral imaging applications