Improved photoconversion from MoSe2 based PEC solar cells

MoSe₂, a group VI TMDC, has been found to be highly stable against photocorrosion due to d→d transitions and has a band gap of 1.4 eV.Thus, it possesses high potential towards photoelectronic applications. As grown, MoSe₂ based photoelectrochemical (PEC) solar cells are generally found to show low conversion efficiency. It has been shown here that cleaving and controlled chemical and thermal processing can lead to viable levels of photoconversion with high stability. The observed improvement in the behaviour of such solar cells has been attributed to improvements in various parameters like series resistance, minority carriers, diffusion lengths etc.     

Electrochemical solar cells with layer-type semiconductor anodes. Performance of n-MoSe2 cells

The output characteristics and the long-term performances of n-MoSe₂ (I^?, I₂) electrochemical solar cells have been investigated. It has been confirmed that, by analogy with other layer-type, d-band transition metal dichalcogenide systems, the surface state of the semiconductor plays a key role in the behaviour of the cell. With ‘smooth’ crystal samples, fill factor and efficiency values of the order of 0.6 and 6%, respectively, have been obtained under AM1 illumination. Such performances are, however, drastically reduced if ‘irregular’ crystal samples are used.Control of these undesirable surface state effects has been attempted by chemical treatments specific to the unsaturated transition metal atoms exposed to the electrolyte at the edge sites. Finally, the stability of n-MoSe₂ I^?, I₂) cells under long time operation, has also been evaluated.     

Surface modification of semiconductor photoelectrode for improved solar cell performance

The investigation is focused on the synthesis of nanostructured TiO₂–CuO admixed photoelectrode and its use as a photoelectrode of high-efficiency PEC solar cells for hydrogen production. TiO₂, in the nanostructured form, has been prepared by hydrolysis of titanium(IV) isopropoxide solution. An improvement in the nanostructured TiO₂ photoelectrode carried out in the present work corresponds to admixing CuO to improve the spectral response. In the present study, photo-electrochemical (PEC) and hydrogen evolution characteristics of new types of ns-TiO₂–CuO admixed/Ti septum-based semiconductor septum photo-electrochemical (SC-SEP PEC) solar cell has been studied. The CuO admixed ns-TiO₂ exhibited a high photocurrent and photovoltage of 18.6 mA/cm² and 680 mV, respectively. The ns-TiO₂–CuO electrode exhibited a higher hydrogen gas evolution rate of 14.00 l/h m².     

Dependence of the I–V characteristics of amorphous silicon solar cells on illumination intensity and temperature

Current-voltage characteristics of amorphous silicon (a-Si) solar cells are systematically investigated as functions of the illumination intensity and ambient temperature. The principle of superposition of the short-circuit current and the dark current, which is usually assumed for crystalline silicon solar cells, is not applicable to a-Si solar cells. It is shown, that the output current of a-Si solar cells at a given illumination intensity E₂mW/cm²I_E2(V) is expressed by a relatively simple equation, I_E2(V) = I_d(V) + (_{E2/100) × (I100(V) — Id(V))}, when the series resistance of the solar cells is negligible. Here, I_d(V) is the dark current, I₁₀₀(V) is the output current at an illumination of 100 mW/cm², and V is the applied voltage. Empirical formula to describe the dependence of the current-voltage characteristics on the illumination intensity and the temperature are presented and discussed.     

Photocatalytic behaviour of n-MoSe2 single crystals in contact with the I−, I2 redox couple in solar photo-electrochemical cells

The photocatalytic activity of the surface of n-MoSe₂ crystals for localized oxidation of iodide ions has been examined in a typical photo-electrochemical cell structure by direct microscopic observation and by output performance measurements under spot illumination.The results demonstrate the presence on the semiconductor surface of ‘active’ and ‘non active’ areas. This drastic difference in the catalytic properties of superficial points in the same semiconductor sample may explain the unique role of the I^?, I₂ redox couple in the behaviour of layer-type semiconductor photoelectrochemical solar cells, as well as the different response to selective superficial chemical agents presented by layered semiconductor crystals of apparently comparable surface morphology.     

On the synthesis of nanostructured TiO2 anatase phase and the development of the photoelectrochemical solar cell

Unlike the rutile; the anatase phase of TiO₂ has not been extensively employed for fabrication of PEC cells primarily due to the difficulty in the synthesis of a stable anatase structural variant. The present investigation is focused on the synthesis of the anatase phase and its use as a photoelectrode of high efficiency PEC Solar Cells. TiO₂, in the nanostructured form, has been prepared by the hydrolysis of Titanium (IV) isopropoxide solution. The nanostructured TiO₂ (anatase) stable phase has been synthesised by sintering the synthesised film at ∼500°C with a heating rate of 1°C/min for a duration of 3 h in argon. The films of nanostructured TiO₂ anatase phase have been used as photoelectrodes in PEC solar cells.An improvement in TiO₂(ns) anatase phase photoelectrode carried out in the present work corresponds to admixing In₂O₃ to improve the spectral response. It has been found that admixing In₂O₃ with TiO₂(ns) anatase phase improves the solar spectral response. The structural, microstructural, optical, and photoelectrochemical properties of the TiO₂(ns) anatase phase and TiO₂(ns) anatase-In₂O₃ photoelectrode have been studied. The response of TiO₂(ns) anatase phase bearing photoelectrode based PEC solar cell corresponds to V_OC ≈ 460 mV, I_SC ≈ 2.4 mA/cm² and for its In₂O₃ doped version, these are V_OC ≈ 640 mV and I_SC ≈ 10.4 mA/cm².     

Photoelectrochemical properties of spray deposited n-ZnIn2Se4 thin films

Zinc indium selenide (ZnIn₂Se₄) thin films have been prepared by spraying a mixture of an equimolar aqueous solution of zinc sulphate (ZnSO₄), indium trichloride (InCl₃), and selenourea (CH₄N₂Se), onto preheated fluorine-doped tin oxide (FTO)-coated glass substrates at optimized conditions of substrate temperature and a solution concentration. The photoelectrochemical (PEC) cell configuration of n-ZnIn₂Se₄/1 M (NaOH+Na₂S+S)/C has been used for studying the current voltage (I–V), spectral response, and capacitance voltage (C–V) characteristics of the films. The PEC study shows that the ZnIn₂Se₄ thin films exhibited n-type conductivity. The junction quality factor in dark (n_d) and light (n_l), series and shunt resistance (R_s and R_sh), fill factor (FF) and efficiency (η) for the cell have been estimated. The measured (FF) and η of the cell are, respectively, found to be 0.435% and 1.47%.     

Photoelectrochemical characteristics of brush plated tin sulfide thin films

Thin films of tin sulfide find wide applications in optoelectronic devices and window materials for heterojunction solar cells. Thin films of p-SnS were brush plated onto tin oxide coated glass substrates from aqueous solution containing SnCl₂ and Na₂S₂O₃. Deposits have been characterized with XRD and SEM for structural analysis. Hot probe method showed invariably p-type nature for all the brush plated SnS films. The variation of space charge capacitance, C_sc, with applied potential, V, was recorded for the PEC cell with p-SnS/Fe³⁺, Fe²⁺/Pt system. The spectral response of the PEC cell formed with SnS photoelectrode was studied and reported.     

The study on high efficient AlxGa1−xAs/GaAs solar cells

The investigation of Al_xGa_1−xAs/GaAs solar cells is carried out by means of both metalorganic chemical vapor deposition (MOCVD) and liquid-phase epitaxial (LPE) technique. The measurements of illuminated I–V characteristics, dark I–V characteristics and quantum efficiencies were performed for the GaAs solar cells made in author's laboratory. The measuring results revealed that the quality of materials in GaAs solar cell's structures is the key factor for getting high-efficient GaAs solar cells, but the effect of post-growth technology on the performances of GaAs solar cells is also very strong. The 21.95% (AM0, 2×27 cm², 25°C) high conversion efficiency in a typical GaAs solar cell has been achieved owing to improving the quality of materials as well as optimizing the post-growth technology of devices.     

Effect of illumination intensity and temperature on the I–V characteristics of n-C/p-Si heterojunction

Krishna et al. (Sol. Energy Mater. Sol. Cells 65 (2001) 163) have recently developed an heterojunction n-C/p-Si in order to achieve low cost and high-efficiency carbon solar cell. It has been shown that for this structure, the maximum quantum efficiency (25%) appears at wavelength λ (600 nm). In this paper, the dependence of I–V characteristics of this heterojunction solar cell on illumination intensity and temperature has been systematically investigated. An estimation of the stability of the solar cell with temperature has been made in terms of the temperature coefficient of I_sc and V_oc. The intensity variation study has been used to estimate the series resistance R_s of the solar cell.The effect of illumination intensity on I–V of n-C/p-Si heterojunction is more complex because the carrier lifetime and the carrier mobility of amorphous carbon are small and also because drift of carriers by built-in electric field plays an important role in these cells. Therefore, the conventional analytical expression for I–V characteristic is not applicable to such solar cells. These structures will not obey the principle of superposition of illuminated and dark current. The experimental results have been analysed by developing empirical relation for I–V.The temperature sensitivity parameters α, the change in I_sc and β, the change in V_oc per degree centigrade have been computed and are found to be 0.087 mA/°C and 1 mV/°C, respectively. This suggests that the heterojunction n-C/p-Si has good temperature tolerance. The value of series resistance has been estimated from the family of I–V curves at various intensities. The R_s is found to be ≈12 Ω, which is on the higher side from the point of view of photovoltaic application.     

Dye sensitized photovoltaic cells: Attaching conjugated polymers to zwitterionic ruthenium dyes

The synthesis of a zwitterionic ruthenium dye that binds to anatase surfaces and has a built-in functionality that allows for the attachment of a conjugated polymer chain is presented. The system was found to adsorb on the surface of anatase anchored by the ruthenium dye. Two types of devices were prepared: standard photoelectrochemical (PEC) solar cells and polymer solar cells. The PEC solar cells employed a sandwich geometry between TiO₂ nanoporous photoanodes and Pt counter electrodes using LiI/I₂ in CH₃CN as an electrolyte. The polymer solar cells employed planar anatase electrodes and the complex was adsorbed onto the surface before evaporation of gold electrodes. Alternative devices were obtained by spincoating of the polymer solution onto PEDOT:PSS covered indium-doped tin oxide substrates. PEC solar cells gave the best results and the main finding was that the polymer chain served as a light harvesting antenna for the ruthenium dye.     

Photoelectrochemical investigations on electrochemically deposited CdSe and Fe-doped CdSe thin films

Thin films of CdSe and Fe-doped CdSe (Fe:CdSe) were deposited onto stainless steel substrates by electrodeposition technique. The photoelectrochemical investigations have been carried out using the cell configurations CdSe/1 M (Na₂S–S–NaOH)/C and Fe:CdSe/1 M (Na₂S–S–NaOH)/C for studying the current–voltage (I–V) characteristics in dark and under illumination, photovoltaic output, spectral response, photovoltaic rise and decay characteristics. The studies reveal that films are n-type conductivity. The junction quality factor in light (n_l), series and shunt resistance (R_s and R_sh), fill factor (FF) and efficiency (η) for the cell have been estimated. After Fe doping, efficiency and FF of PEC solar cell is found to be improved from 0.34% and 31.12 to 1.80% and 35.78, respectively.     

Concentrator silicon solar cells from silicon industry rejects

Two types of silicon (Si) substrates (40 n-type with uniform base doping and 40 n/n⁺ epitaxial wafers) from the silicon industry rejects were chosen as the starting material for low-cost concentrator solar cells. They were divided into four groups, each consisting of 20 substrates: 10 are n/n⁺ and 10 are n substrates, and the solar cells were prepared for different diffusion times (45, 60, 75 and 90 min). The fabricated solar cells on n/n⁺ substrates (prepared with a diffusion time of 75 min) showed better parameters. In order to improve their performances, particularly the fill factor, 20 new solar cells on n/n⁺ substrates were fabricated using the same procedure (the diffusion time was 75 min)—but with four new front contact patterns. Investigation of current–voltage (I–V) characteristics under AM 1.5 showed that the parameters of these 20 new solar cells have improved in comparison to previous solar cells' parameters, and were as follows: open-circuit voltage (V_OC=0.57 V); short circuit current (I_SC=910 mA), and efficiency (η=9.1%). Their fill factor has increased about 33%. The I–V characteristics of these solar cells were also investigated under different concentration ratios (X), and they exhibited the following parameters (under X=100 suns): V_OC=0.62 V and I_SC=36 A.     

Influence of aminothiazole additives in I/I3 redox electrolyte solution on Ru(II)-dye-sensitized nanocrystalline TiO2 solar cell performance

The influence of aminothiazole additives in acetonitrile solution of an I⁻/I₃⁻ redox electrolyte on the performance of a bis(tetrabutylammonium)cis-bis(thiocyanato)bis(2,2′- bipyridine-4-carboxylic acid, 4′-carboxylate)ruthenium(II) (N719) dye-sensitized TiO₂ solar cell was studied. The current–voltage characteristics were investigated under AM 1.5 (100 mW/cm²) for nine different aminothiazole compounds. The aminothiazole additives tested had varying influences on the solar cell performance. Most of the additives enhanced the open-circuit photovoltage (V_oc), but reduced the short circuit photocurrent density (J_sc) of the solar cell. Both the physical and chemical properties of the aminothiazoles were computationally calculated in order to determine the reasons that the additive influenced solar cell performance. The larger the calculated partial charge of the nitrogen atom in the thiazole, the higher the V_oc value. The V_oc value increased as the dipole moment of aminothiazoles in acetonitrile increased. Moreover, the V_oc of the solar cell also increased as the size of the aminothiazole molecules decreased. These results suggest that the electron donicity of the aminothiazole additives influenced the interaction with the TiO₂ photoelectrode, which altered the dye-sensitized solar cell performance.     

(Photo) electrochemical investigations on spray deposited n-CdIn 2Se4 thin film/polysulphide/c photoelectrochemical solar cell1

Cadmium indium selenide (n-CdIn ₂Se₄) thin films have been synthesized by spraying the mixture of an equimolar solutions of cadmium chloride [CdCl₂], indium trichloride [InCl₃] and selenourea [(NH₂)₂CSe] in aqueous media onto preheated fluorine doped tin oxide (FTO) coated glass substrates at optimized parameters of substrate temperature and solution concentration. The photoelectrochemical (PEC) cell configuration of n-CdIn₂Se/(l MNaOH + 1 MNa₂S + 1 M S)/C has been used for investigating the current—voltage (I–V) characteristics under dark and white light illumination, photovoltaic output, spectral response, photovoltaic rise and decay characteristics. The PEC study reveals the thin film of CdIn₂Se₄ exhibits n-type conductivity. The junction quality factor in dark (n _d) and light (n _l), series and shunt resistance (R _s and R _sh), fill factor (FF) and efficiency (η) for the cell have been estimated. The observed efficiency and FF of PEC solar cell is found to be 1.95 and 0.37% respectively. Mott-Schottky plot shows the flat-band potential (V _fb) of n-CdIn₂Se₄/(l M NaOH + 1 M Na₂S + 1 M S)/C cell to be—0.655 V/SCE.     

Photovoltaic characteristics of CuInS2/CdS solar cell by electron beam evaporation

When a CuInS₂/CdS solar cell was fabricated by depositing CdS thin film with dopant In of 1.0 at% on ternary compound CuInS₂ thin film with the lowest resistivity of 5.59 × 10⁻² Ωcm, its best result was as follows: V_oc = 461 mV, I_sc = 26.9 mA, FF = 0.685, η = 5.66% under the illumination of 100 mW/cm². And its series resistance and lattice mismatch was 5.1 Ω and 3.2%, respectively.Besides, a 4 layer structure solar cell of -CuInS₂/high -CuInS₂/high -CdS/low - CdS has been fabricated. When thickness of high - CuInS₂ was 0.2 μm, its best result was as follows: V_oc = 580 mV, I_sc = 30.6 mA, FF = 0.697, η = 8.25%. An its series resistance and lattice mismatch were 4.3 Ω and 2.8%, respectively.     

Influence of pyrazole derivatives in I/I3 redox electrolyte solution on Ru(II)-dye-sensitized TiO2 solar cell performance

The influence of pyrazole additives in an I⁻/I₃⁻ redox electrolyte solution on the performance of a bis(tetrabutylammonium)cis-bis(thiocyanato)bis(2,2′-bipyridine-4-carboxylic acid, 4′-carboxylate)ruthenium(II) (N719) dye-sensitized TiO₂ solar cell was studied. The current–voltage characteristics of the cell were measured using 18 different pyrazole derivatives. All of the pyrazole additives enhanced the open-circuit photovoltage (V_oc) and the solar energy conversion efficiency (η), but reduced the short-circuit photocurrent density (J_sc). Most of the pyrazoles improved fill factor (ff). The physical and chemical properties of the pyrazoles were computationally calculated in order to elucidate the reasons for the additive effects on cell performance. The greater the partial charge of the nitrogen atom at position 2 in the pyrazole group, the larger the V_oc, but the smaller the J_sc values. As the dipole moment of the pyrazole derivatives increased, the V_oc value increased, but the J_sc value decreased. The V_oc of the cell also increased as the ionization energy of the pyrazoles decreased. These results suggest that the electron donicity of the pyrazole additives affected the interaction with the nanocrystalline TiO₂ photoelectrode, the I⁻/I₃⁻ electrolyte, and the acetonitrile solvent, which changed the Ru(II)-dye-sensitized solar cell performance.     

Nanostructured Zn-Fe2O3 thin film modified by Fe-TiO2 for photoelectrochemical generation of hydrogen

Nanostructured semiconductor thin films of Zn-Fe₂O₃ modified with underlying layer of Fe-TiO₂ have been synthesized and studied as photoelectrode in photoelectrochemical (PEC) cell for generation of hydrogen through water splitting. The Zn-Fe₂O₃ thin film photoelectrodes were designed for best performance by tailoring thickness of the Fe-TiO₂ film. A maximum photocurrent density of 748 μA/cm² at 0.95 V/SCE and solar to hydrogen conversion efficiency of 0.47% was observed for 0.89 μm thick modified photoelectrode in 1 M NaOH as electrolyte and under 1.5 AM solar simulator. To analyse the PEC results the films were characterized for various physical and semiconducting properties using XRD, SEM, EDX and UV–Visible spectrophotometer. Zn-Fe₂O₃ thin films modified with Fe-TiO₂ exhibited improved visible light absorption. A noticeable change in surface morphology of the modified Zn-Fe₂O₃ film was observed as compared to the pristine Zn-Fe₂O₃ film. Flatband potential values calculated from Mott–Schottky curves also supported the PEC response.     

Power output of Al/SnO2/n-Si solar cell

An Al/SnO₂/n-Si solar cell from n-type silicon (6.5 Ω-cm, 100) wafers using chemical vapour deposition (CVD) has been fabricated. The fabrication details, I–V characteristics determining conversion-efficiency (η_max), open circuit voltage (V_oc) and short circuit current (I_sc) have been presented. A maximum conversion efficiency of 6.3% for an unencapsulated cell of area 85.20 mm² has been obtained.     

Highly efficient photon-to-electron conversion with mercurochrome-sensitized nanoporous oxide semiconductor solar cells

Dye-sensitized solar cells based on nanoporous oxide semiconductor thin films such as TiO₂, Nb₂O₅, ZnO, SnO₂, and In₂O₃ with mercurochrome as the sensitizer were investigated. Photovoltaic performance of the solar cell depended remarkably on the semiconductor materials. Mercurochrome can convert visible light in the range of 400–600 nm to electrons. A high incident photon-to-current efficiency (IPCE), 69%, was obtained at 510 nm for a mercurochrome-sensitized ZnO solar cell with an I⁻/I₃⁻ redox electrolyte. The solar energy conversion efficiency under AM1.5 (99 mW cm⁻²) reached 2.5% with a short-circuit photocurrent density (J_sc) of 7.44 mA cm⁻², a open-circuit photovoltage (V_oc) of 0.52 V, and a fill factor (ff) of 0.64. The J_sc for the cell increased with increasing thickness of semiconductor thin films due to increasing amount of dye, while the V_oc decreased due to increasing of loss of injected electrons due to recombination and the rate constant for reverse reaction. Dependence of photovoltaic performance of mercurochrome-sensitized solar cells on semiconductor particles, light intensity, and irradiation time were also investigated. High performance of mercurochrome-sensitized ZnO solar cells indicate that the combination of dye and semiconductor is very important for highly efficient dye-sensitized solar cells and mercurochrome is one of the best sensitizers for nanoporous ZnO photoelectrode. In addition, a possibility of organic dye-sensitized oxide semiconductor solar cells has been proposed as well as one using metal complexes.