高性能SAW振荡器的频率稳定性

近几年来,高稳定性SAW振荡器的研制已取得了重大的进展,能对密封的SAW谐振器精确地进行频率调整,SAW振荡器的频率稳定性也有了显著的改进。500MHz SAW谐振振荡器的相位噪声达到了-184dBc/Hz,同时在10Hz的载波偏置条件下,闪变效应噪声为-83dBc/Hz。在±150kHz调谐范围内,验证了400MHz SAW延迟线振荡器样机的相位噪声为-170dBc/Hz,在10Hz的偏置条件下,其闪变效应噪声电平为-70dBc/Hz。检测到SAW器件的振动灵敏度为10~(-10)/g量级,最近还对采用混合电路的900MHz SAW谐振振荡器进行了同样的振荡灵敏性检测。按规定制作的500MHz SAW谐振振荡器的长期频率稳定性高达±1ppm/a。     

影响声表面波振荡器的频率稳定性因素分析

本文阐述了影响声表面波振荡器频率稳定性的主要因素;探讨了改善声表面波振荡器频率稳定性的方法。     

高稳定SAW振荡器

介绍了高稳定声表面波SZD817型振荡器,它具有优良的频率温度稳定特性,体积小(50mm×30mm×18mm),质量轻(小于50g),相位噪声低,谐波和杂波抑制高,工作温度范围宽(-55～+85°C),可靠性高等特点。一般声表面波振荡器的频率温度稳定性都在10-4量级以上。而SZD817型振荡器的频率温度稳定性,在工作温度-55～+85°C情况下为10-6量级,在-40～+70°C情况下达10-7量级。     

以非线性理论阐述反馈振荡器的频率与幅度的稳定性

本文首先对线性的频率稳定理论用于近似正弦反馈振荡器的线性频率稳定理论,进行了评论性的回顾。在这方面,解释所谓的线性振荡器是清楚的。其后,是应用描述函数法和判决方程法所得到新的表达式,去阐述反馈振荡器考虑成一个非线性网络时的振荡频率和振荡幅度的稳定性。     

消费类芯片RC振荡器的分析与设计

市场竞争的压力使得人们不得不在成本和性能间寻找一个令人满意的折衷.振荡器的选择也是如此,在晶振、环形振荡器和RC振荡器中,RC振荡器具有面积小,成本低,频率可调等优点适合于消费类电子等对频率稳定性要求不高的领域.本文先分析简单的多谐RC振荡器,然后介绍一种性能更优的,基于比较器结构的RC振荡器的设计.并给出了设计中需要注意的问题,以及流片后实际的测量数据.     

基于D类音频功放高稳定性频率振荡器的设计

PWM调制的D类音频功放高稳定性频率振荡器已被广泛应用于各类电子产品.本文在分析基本驰张振荡器工作原理的基础上,设计了一种高稳定性的固定频率振荡器电路,单电源5V下工作频率250kHz.Spectre仿真表明,在-40℃-120℃范围内振荡频率变化仅为3%.基于CSMC0.5 μmCMOS工艺,该振荡器应用于一款D类音频功放集成电路,流片成功.     

一种基于比较器失配补偿的高稳定性RC振荡器

针对传统RC振荡器容易受到温度和工艺偏差影响的问题,提出了一种新的振荡器结构。该振荡器电路运用零温度系数参考电压和开关网络,实现了比较器电路的工艺失配补偿,达到了高的温度稳定性。该振荡器具有对温度和工艺偏差不敏感、面积小、功耗低等优点。仿真结果表明,输出时钟频率为11.5 kHz时,在-10℃~90℃温度范围内振荡器频率偏差在±1%以内。     

FoxElectronics提供适用于宽温度范围的±25ppmXpressO振荡器

FoxElectroniCS现在推出采用微型3．2mm×25mm封装的XpressOXO振荡器产品，的工作温度范围在-20℃～＋70℃内具有±25ppm的超级频率稳定性。新型HCMOS33VFXO-HC33是FoxElectronics全系列高性能低成本XPress0振荡器的型号。这一系列的振荡器均具有非常小的抖动．而且在10日内即可交付。     

一种无比较器的高精度RC振荡器设计

基于华虹0.18μm CMOS工艺，设计了一种无比较器的低温漂高精度RC振荡器。通过调整电流源的负温度系数电流补偿MOSFET阈值电压的温漂，保证输出频率在大温度范围内的高稳定性。通过提高电流源输出阻抗，提高振荡器的电压稳定性。采用数字修调技术矫正工艺偏差引起的频率误差。该振荡器由启动电路、CTAT电流源电路、电流镜电路、修调电路、竞争冒险消除电路和RC振荡电路六部分构成。因为没有采用比较器结构，所以在该振荡器中，不会出现由于比较器的传输延时与输入失调电压引起的非理想因素。采用Cadence进行电路仿真与验证，后仿真结果表明，该振荡器的典型频率为2 MHz,起振时间为5.1μs。在3～5 V电源电压变化范围内，频率偏差均在±0.55%以内；在-40～125℃温度范围内，输出频率随温度的变化率均在±1.2%以内，可适用于高精度的数模混合信号芯片。     

一种基于多谐振荡器的电压/频率转换器

介绍了一种基于多谐振荡器的电压频率转换器，着重论述了多谐振荡器的设计原理，并对以此为基础设计的压频转换器的温度特性和线性度进行了分析。模拟结果显示，这种转换器线性度好，温度稳定性较高，频率范围较好，有很好的实用价值。     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

A method for calculating the center position of collimated light

It is a key problem to accurately calculate beam spots＇ center of measuring the warp by using a collimated laser. A new method, named double geometrical center method （DGCM）, is put forward for the first time. In this method, a plane wave perpendicularly irradiates an aperture stop, and a charge couple device （CCD） is employed to receive the diffraction-beam spots, then the geometrical centers of the fast and the second diffraction-beam spots are calculated respectively, and their mean value is regarded as the center of datum beam. In face of such adverse instances as laser intension distributing defectively, part of the image being saturated, this method can still work well. What＇s more, this method can detect whether an unacceptable error exits in the courses of image receiving, processing and calculating. The experimental results indicate the precision of this method is high.     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.