Applicability of light-emitting diodes as light sources for active differential optical absorption spectroscopy measurements

We present what is to our knowledge the first use of light-emitting diodes (LEDs) as light sources for long-path differential optical absorption spectroscopy (LP-DOAS) measurements of trace gases in the open atmosphere. Modern LEDs represent a potentially advantageous alternative to thermal light sources, in particular to xenon arc lamps, which are the most common active DOAS light sources. The radiative properties of a variety of LEDs were characterized, and parameters such as spectral shape, spectral range, spectral stability, and ways in which they can be influenced by environmental factors were analyzed. The spectra of several LEDs were found to contain Fabry-Perot etalon-induced spectral structures that interfered with the DOAS evaluation, in particular when a constant temperature was not maintained. It was shown that LEDs can be used successfully as light sources in active DOAS experiments that measure NO2 and NO3 near 450 and 630 nm, respectively. Average detection limits of 0.3 parts in 10(9) and 16 parts in 10(12) respectively, were obtained by use of a 6 km light path in the open atmosphere.     

Optical characterization of ultrabright LEDs

Ultrabright light emitting diodes (LEDs) are a new light source for visual psychophysics and microscopy. The new LEDs are intended primarily for room and exterior illumination, and the manufacturers' specifications are adequate for that. However, we use them as light sources in situations where a more complete characterization may be useful. For one set of LEDs we have measured the radiometric intensity and its distribution in space and wavelength, and we have tested for interactions of these variables and their dependence on driver configuration. We describe techniques for making these measurements and give a link to a simple calculator for converting among radiometric and photometric measures, as well as an evaluation of the safety considerations these very bright sources demand.     

Far-field pattern simulation of flip-chip bonded power light-emitting diodes by a Monte Carlo photon-tracing method

The far-field pattern of light-emitting diodes (LEDs) is an important issue in practical applications. We used a Monte Carlo photon-tracing method for the package design of flip-chip bonded power LEDs. As a first-order approximation, we propose using a plane light source model to calculate the far-field pattern of encapsulated LEDs. The far-field pattern is also studied by use of a more detailed model, which takes the structure of all epitaxial layers of a flip-chip bonded power LED into consideration. By comparing the simulation results with the experimental data, we have concluded that the plane light source model is much less time-consuming and offers fairly good precision for package design.     

Thermal resistance of light emitting diode PCB with thermal vias

Light emitting diodes (LEDs) are already familiar for use as lighting sources in various electronic devices and displays. LEDs have many advantages such as long life, low power consumption, and high reliability. In the future, as an alternative to fluorescent lighting, LEDs are certain to receive much attention. However, in components related to advanced LED packages or modules there has been an issue regarding the heat from the LED chip. The LED chip is still being developed for use in high-power devices which generate more heat. In this study, we investigate the variation of thermal resistance in LED modules embedded with thermal vias. Through the analysis of thermal resistance with various test vehicles, we obtained the concrete relationship between thermal resistance and the thermal via structure.     

Development of a Tunable LED-Based Colorimetric Source

A novel, spectrally tunable light-source utilizing light emitting diodes (LEDs) for radiometric, photometric, and colorimetric applications is described. The tunable source can simulate standard sources and can be used as a transfer source to propagate photometric and colorimetric scales from calibrated reference instruments to test artifacts with minimal increase in uncertainty. In this prototype source, 40 LEDs with 10 different spectral distributions were mounted onto an integrating sphere. A voltage-to-current control circuit was designed and implemented, enabling independent control of the current sent to each set of four LEDs. The LEDs have been characterized for stability and dependence on drive current. The prototype source demonstrates the feasibility of development of a spectrally tunable LED source using LEDs with up to 40 different spectral distributions. Simulations demonstrate that such a source would be able to approximate standard light-source distributions over the visible spectral range—from 380 nm to 780 nm—with deviations on the order of 2 %. The tunable LED source can also simulate spectral distributions of special sources such as discharge lamps and display monitors. With this tunable source, a test instrument can be rapidly calibrated against a variety of different source distributions tailored to the anticipated uses of the artifact. Target uncertainties for the calibration of test artifacts are less than 2 % in luminance and 0.002 in chromaticity for any source distribution.     

光致变色材料的研究与应用

变色材料在变色眼镜、光学信息存储、光分子开关等方面具有广泛的应用.主要分析了螺吡喃、俘精酸酐、二芳基乙烯以及二氧化钛、卤化银等有机和无机光致变色材料的研究现状及其变色机理,最后介绍了光致变色材料在国防以及信息存储材料等方面的应用前景.     

Enhancement of Light Output Power from LEDs Based on Monolayer Colloidal Crystal

One of the major challenges for the application of GaN‐based light emitting diodes (LEDs) in solid‐state lighting lies in the low light output power (LOP). Embedding nanostructures in LEDs has attracted considerable interest because they may improve the LOP of GaN‐based LEDs efficiently. Recent advances in nanostructures derived from monolayer colloidal crystal (MCC) have made remarkable progress in enhancing the performance of GaN‐based LEDs. In this review, the current state of the art in this field is highlighted with an emphasis on the fabrication of ordered nanostructures using large‐area, high‐quality MCCs and their demonstrated applications in enhancement of LOP from GaN‐based LEDs. We describe the remarkable achievements that have improved the internal quantum efficiency, the light extraction efficiency, or both from LEDs by taking advantages of diverse functions that the nanostructures provided. Finally, a perspective on the future development of enhancement of LOP by using the nanostructures derived from MCC is presented.     

Surface-plasmon-enhanced light emitters based on InGaN quantum wells

Since 1993, InGaN light-emitting diodes (LEDs) have been improved and commercialized, but these devices have not fulfilled their original promise as solid-state replacements for light bulbs as their light-emission efficiencies have been limited. Here we describe a method to enhance this efficiency through the energy transfer between quantum wells (QWs) and surface plasmons (SPs). SPs can increase the density of states and the spontaneous emission rate in the semiconductor, and lead to the enhancement of light emission by SP-QW coupling. Large enhancements of the internal quantum efficiencies (eta(int)) were measured when silver or aluminium layers were deposited 10 nm above an InGaN light-emitting layer, whereas no such enhancements were obtained from gold-coated samples. Our results indicate that the use of SPs would lead to a new class of very bright LEDs, and highly efficient solid-state light sources.     

On‐Demand Control of the Photochromic Properties of Naphthopyrans

Photofunctional compounds have emerged as critically important materials for both fundamental studies and industrial applications. Control of the thermal decoloration speed to within several seconds while sustaining satisfactory photochromic colorability is an important challenge for the application of such materials to photochromic lenses and smart windows. Photochromic naphthopyran derivatives are utilized for photochromic lenses because of their high durability and easily controllable colorability. However, the residual color imparted by the long‐lived transient species upon ceasing light irradiation remains a hindrance to practical applications. In this study, a strategy is demonstrated for on‐demand control of the thermal decoloration speed of the transient colored species of naphthopyran derivatives. The increase in the ring‐size of the alkylenedioxy moiety on the naphthopyrans accelerates the thermal back‐reaction independently of the maximum‐absorption wavelength of the colored isomer, leading to the realization of yellow‐, red‐, and blue‐photochromic naphthopyrans with similar thermal fading speeds. This novel molecular design provides a strategy for the future development of advanced photoresponsive materials.     

Induced metal-dielectric selective reflecting filter for miniprojectors

Metal-dielectric multiple-band high-reflection coatings are designed as induced filters and fabricated by reactive deposition. Ta(2)O(5) and SiO(2) are used as high- and low-refractive-index layers, and Cr and Al are used as bonding and reflective layers, respectively, for constructing the filters. The metal-dielectric coatings are deposited on a light-shaping flexible plastic substrate for use as a screen with high-contrast enhancement performance. This screen was suitable for miniprojectors with red, green, and blue LEDs as light sources. Mechanical properties such as stress, hardness, and adhesive strength of these multilayer films are investigated also.     

A self-assembled Ag nanoparticle agglomeration process on graphene for enhanced light output in GaN-based LEDs

We introduce Ag nanoparticles fabricated by a self-assembled agglomeration process in order to enhance the electrical properties, adhesive strength, and reliability of the graphene spreading layer in inorganic-based optoelectronic devices. Here, we fabricated InGaN/GaN multi-quantum-well (MQW) blue LEDs having various current spreading layers: graphene only, graphene with Ag nanoparticles covering the surface, and graphene with Ag nanoparticles only in selectively patterned micro-circles. Although the Ag nanoparticles were found to act as an additional current path that increases the current spreading, optical properties such as transmittance also need to be considered when the Ag nanoparticles are combined with graphene. As a result, LEDs having a graphene spreading layer with Ag nanoparticles formed in selectively patterned micro-circles displayed more uniform and stable light emission and 1.7 times higher light output power than graphene only LEDs.     

Optimized birefringence changes during isolated nerve activation

Single trial, birefringence signals associated with action potentials from isolated lobster nerves were optimized with high-intensity light-emitting diodes (LEDs) and glass polarizers. The narrow spectral output of the LEDs allowed us to select specific wavelengths, increasing the effectiveness of the polarizers and minimizing the stray light in the system. The LEDs produced intensity profiles equivalent to narrowband filtered 100-W halogen light, and birefringence signals were comparable or superior in size and clarity to halogen lamp recordings. The results support a direct correlation between signal size and polarizer extinction coefficient. Increasing the sensitivity of birefringence detection through the use of LED light sources could ameliorate noninvasive brain imaging techniques that employ fast optical consequences associated with action potential propagation.     

Low-Cost Surface-Mount LED Gas Sensor

A low-cost chemical sensor comprising surface-mount light-emitting diodes (LEDs) has been developed for colorimetric gas detection. The device consists of a pair of LEDs connected to a simple PIC microcontroller circuit and in the most basic form, requires the use of only two input–output (I/O) pins on the chip. The key features of this sensor are the use of a LED rather than a photodiode for light detection and an all-digital light detection protocol that leads to a reduction in cost and power consumption by avoiding the need for an analog-to-digital converter. The surface-mount diodes employed are more compact than standard LEDs and are more amenable to coating by solid-state sensor films. Results from sensors employing a chemochromic ammonia sensitive film are presented, and the detection of this target is demonstrated in the parts-per-million range. The configuration is applicable to a wide range of colorimetric gas sensing materials.     

Ligand Enabling Visible Wavelength Excitation of Europium(III) for Fluoroimmunoassays in Aqueous Micellar Solutions

Fluorescent reporters based on lanthanide ions, such as europium chelates, enable highly sensitive detection in immunoassays and other ligand binding assays. Unfortunately they normally require UV-excitation produced by a xenon flash or nitrogen laser light source. In order to use modern solid state excitation sources such as light emitting diodes (LEDs), these reporters need to be excited at wavelengths longer than 365 nm, where high-powered ultraviolet LEDs are available. A novel ligand, 9-ethyl-3,6-bis(5',5',5',4',4'-pentafluoro-1',3'-dioxopentyl)carbazole (bdc), was synthesized to efficiently excite europium(III) at wavelengths up to 450 nm in micellar solutions, and its performance was compared to a commercially available DELFIA enhancement solution. The detection limit of Eu(III) with the bdc-ligand using 365 nm excitation was determined to be 63 fM, which is 3 times lower than with the DELFIA solution. The bdc-ligand enabled sensitive detection of europium(III) ions in solution using 365 nm excitation and displayed similar sensitivity and functionality as commercially available DELFIA enhancement solution. Therefore, this novel enhancement solution might be a feasible alternative in producing time-resolved fluorescence under LED-excitation.     

Semiconducting polymer LEDs

Technologies based on organic semiconductors may answer the increasing demands that consumers make in the areas of large-area electronics, lightweight displays, and portable computing. Advances in scientific understanding, technology, and device performance have occurred particularly rapidly in the area of polymer light-emitting diodes (LEDs). Material properties and economic considerations suggest that polymer LEDs are the devices most likely to win the race to applications that produce light on inorganic substrates such as glass and silicon, as well as plastic substrates.The field of semiconducting polymers has its root in the 1977 discovery of the semiconducting properties of polyacetylene¹. This breakthrough earned Alan Heeger, Alan MacDiarmid, and Hideki Shirakawa the 2000 Nobel Prize in Chemistry for ‘the discovery and development of conductive polymers’2, 3, 4, 5. Other review articles capture how more than two decades of developments in the physical and chemical understanding of these novel materials has led to new device applications as active and passive electronic and optoelectronic devices ranging from diodes and transistors to polymer LEDs, photodiodes, lasers, and solar cells6, 7, 8, 9, 10, 11. Much interest in plastic devices derives from the opportunities to use clever control of polymer structure combined with relatively economical polymer synthesis and processing techniques to obtain simultaneous control over electronic, optical, chemical, and mechanical features⁵. This article focuses on the advances leading to polymer LEDs12, 13, 14.     

一种计算大功率LED光源模块器件结温的方法

研究了大功率LED光源模块各器件之间热传导的相互影响,建立了一种基于热阻矩阵的LED光源模块器件结温计算公式,然后以一个由5只1W大功率器件组成的光源模块为例,演示如何通过测量器件的正向工作电压计算热阻矩阵,进而计算各器件的结温,并与现有方法计算值以及红外测温仪实际测量值进行了比较,结果表明：本方法比现有计算方法更为准确,可以用来预测LED光源的使用寿命和系统可靠性。     

Interface and Defect Engineering for Metal Halide Perovskite Optoelectronic Devices

Metal halide perovskites have been in the limelight in recent years due to their enormous potential for use in optoelectronic devices, owing to their unique combination of properties, such as high absorption coefficient, long charge‐carrier diffusion lengths, and high defect tolerance. Perovskite‐based solar cells and light‐emitting diodes (LEDs) have achieved remarkable breakthroughs in a comparatively short amount of time. As of writing, a certified power conversion efficiency of 22.7% and an external quantum efficiency of over 10% have been achieved for perovskite solar cells and LEDs, respectively. Interfaces and defects have a critical influence on the properties and operational stability of metal halide perovskite optoelectronic devices. Therefore, interface and defect engineering are crucial to control the behavior of the charge carriers and to grow high quality, defect‐free perovskite crystals. Herein, a comprehensive review of various strategies that attempt to modify the interfacial characteristics, control the crystal growth, and understand the defect physics in metal halide perovskites, for both solar cell and LED applications, is presented. Lastly, based on the latest advances and breakthroughs, perspectives and possible directions forward in a bid to transcend what has already been achieved in this vast field of metal halide perovskite optoelectronic devices are discussed.     

Pulsed excitation source multiplexed fluorometry for the simultaneous measurement of multiple analytes. Continuous measurement of atmospheric hydrogen peroxide and methyl hydroperoxide

Presently, solid-state sources such as light-emitting diodes (LEDs) provide for intense, nearly monochromatic light. They are available over a broad range of emission wavelengths. Unlike incandescent and discharge lamps, LEDs can be turned on and off at high speeds. The resulting light pulses are highly reproducible. This allows the use of a single photomultiplier tube (PMT), often the most expensive component in a high-sensitivity measurement system, as a multiplexed detector with multiple, fiber-optic-coupled, fluorescence-detection cells excited by solid-state sources. A time resolution of 1 min is adequate in many continuous detection schemes. This enables multiple-channel single-detector multiplexed measurement without any loss of S/N. On the basis of this principle, we describe a new automated continuous instrument for the simultaneous measurement of atmospheric hydrogen peroxide and methyl hydroperoxide (MHP). A Nafion membrane diffusion scrubber (DS) is used with hematin-catalyzed oxidation of thiamine to thiochrome for the measurement of H2O2, and an expanded poly(tetrafluoroethylene) (ePTFE) DS is used with a H2O2 destruction catalyst and horseradish peroxidase-catalyzed oxidation of thiamine to thiochrome for the measurement of MHP. The respective limits of detection are 25 pptv and 15 pptv. Design, performance details, and illustrative results from a field campaign (Philadelphia NEO3PS study, 2001) are presented.     

Monolithic GaAs/InGaP nanowire light emitting diodes on silicon

Vertical light emitting diodes (LEDs) based on GaAs/InGaP core/shell nanowires, epitaxially grown on GaP and Si substrates, have been fabricated. The devices can be fabricated over large areas and can be precisely positioned on the substrates, by the use of standard lithography techniques, enabling applications such as on-chip optical communication. LED functionality was established on both kinds of substrate, and the devices were evaluated in terms of temperature-dependent photoluminescence and electroluminescence.     

Silicon-based oxynitride and nitride phosphors for white LEDs—A review

As a novel class of inorganic phosphors, oxynitride and nitride luminescent materials have received considerable attention because of their potential applications in solid-state lightings and displays. In this review we focus on recent developments in the preparation, crystal structure, luminescence and applications of silicon-based oxynitride and nitride phosphors for white light-emitting diodes (LEDs). The structures of silicon-based oxynitrides and nitrides (i.e., nitridosilicates, nitridoaluminosilicates, oxonitridosilicates, oxonitridoaluminosilicates, and sialons) are generally built up of networks of crosslinking SiN₄ tetrahedra. This is anticipated to significantly lower the excited state of the 5d electrons of doped rare-earth elements due to large crystal-field splitting and a strong nephelauxetic effect. This enables the silicon-based oxynitride and nitride phosphors to have a broad excitation band extending from the ultraviolet to visible-light range, and thus strongly absorb blue-to-green light. The structural versatility of oxynitride and nitride phosphors makes it possible to attain all the emission colors of blue, green, yellow, and red; thus, they are suitable for use in white LEDs. This novel class of phosphors has demonstrated its superior suitability for use in white LEDs and can be used in bichromatic or multichromatic LEDs with excellent properties of high luminous efficacy, high chromatic stability, a wide range of white light with adjustable correlated color temperatures (CCTs), and brilliant color-rendering properties.