Fabrication of a MEMS capacitive accelerometer with symmetrical double-sided serpentine beam-mass structure

This paper presents a symmetrical double-sided serpentine beam-mass structure design with a convenient and precise process of manufacturing MEMS accelerometers. The symmetrical double-sided serpentine beam-mass structure is fabricated from a single double-device-layer SOI wafer, which has identical buried oxides and device layers on both sides of a thick handle layer. The fabrication process produced proof mass with though wafer thickness (860 μm) to enable formation of a larger proof mass. Two layers of single crystal silicon serpentine beams with highly controllable dimension suspend the proof mass from both sides. A sandwich differential capacitive accelerometer based on symmetrical double-sided serpentine beams-mass structure is fabricated by three layer silicon/silicon wafer direct bonding. The resonance frequency of the accelerometer is measured in open loop system by a network analyzer. The quality factor and the resonant frequency are 14 and 724 Hz, respectively. The differential capacitance sensitivity of the fabricated accelerometer is 15 pF/g. The sensitivity of the device with close loop interface circuit is 2 V/g, and the nonlinearity is 0.6 % over the range of 0–1 g. The measured input referred noise floor of accelerometer with interface circuit is 2 μg/√Hz (0–250 Hz).     

A three-axis SOI accelerometer sensing with both in-plane and vertical comb electrodes

A three-axis capacitive accelerometer based on silicon-on-insulator is designed and fabricated. In the accelerometer, totally eight groups of capacitors are compactly arranged around an octagonal proof mass. The four groups of capacitors along orthogonal direction with in-plane comb electrodes detect XY acceleration, while the other four groups of capacitors along diagonal direction with vertical comb electrodes detect Z acceleration. Measurements of in-plane and vertical motion by the respective in-plane and vertical comb electrodes enable direct detection for all the three axes with differential capacitive sensing scheme. For the fabricated accelerometer in the size of 4 × 4 mm², the capacitance sensitivities of in-plane and out-of-plane accelerometers are 145.3 and 9.1 fF/g, respectively.     

Dual-axis tuning fork vibratory gyroscope with anti-phase mode vibration mechanism

In this paper, a novel micro-machined dual-axis tuning fork gyroscope (DTFG) with an anti-phase mechanism is proposed. The proposed anti-phase mechanism could effectively minimize the undesired lateral motion and ensure the anti-phase resonant mode of the two vibrating frames of DTFG. The gyroscope is fabricated by the high-aspect-ratio silicon-on-insulation bulk micromachining process with a device layer thickness of 45 μm. Furthermore, a CMOS drive/readout ASIC Chip, which is fabricated by a 0.25 μm 1P5M standard CMOS process, is integrated with the fabricated DTFG by direct wire-bonding. The experimental characterizations of DTFG demonstrate that the rate sensitivities of z-axis and x-axis sense modes are 2.2132 mV/DPS and 1.8477 mV/DPS respectively and the associated R²-linearity are 0.9995 and 0.9996.     

一种低噪声MEMS加速度计设计与制作

为了提高微加速度计的噪声性能,研究了一种基于绝缘体上硅(SOI)技术的单轴MEMS加速度计的设计和加工方案。该微加速度计采用大面积质量块的电容式检测结构,通过增加检测质量,在保证灵敏度的前提下,有效地降低了微加速度计的机械布朗噪声,增强了信噪比。另外,该微加速度计采用一种基于Al保护层的MEMS SOI工艺技术制造,有利于提高微加速度计的整体精度水平。测试结果表明:微加速度计的本底噪声为20μgn/√Hz,灵敏度为2.5 V/gn。     

Coupled effects of gold electroplating and electrochemical discharge machining processes on the performance improvement of a capacitive accelerometer

Coupled effects of an electroplated gold layer and damper holes drilled by Electro Chemical Discharge Machining (ECDM) process on the performance improvement of a quad beam capacitive accelerometer is presented in this paper. A simple quad beam-proof mass configuration with its beams located symmetrically at the centre of all the edges of the proof mass and connected to an outer supporting frame is considered in the present study. For a fixed damping ratio, prime-axis sensitivity of the sensor is increased by the damper holes whereas an electroplated gold layer improves the prime-axis sensitivity, cross-axis sensitivity, and Brownian Noise Equivalent Acceleration (BNEA). Moreover, the increased weight of the proof mass due to an electroplated gold layer further reduces the damping of the device which in turn helps to increase the prime-axis sensitivity more. A new figure of merit called Performance Factor (PF), defined as the ratio of the product of the prime-axis sensitivity and resonant frequency to the cross-axis sensitivity at a fixed damping ratio of 0.7 is used as a quantitative index to evaluate the performance improvement caused by the coupled effects of gold electroplating and ECDM processes. Simulation results show that for a device with damper holes of 8 μm diameter and electroplated gold layer of dimensions 3,000 μm × 3,000 μm × 20 μm, the prime-axis sensitivity is increased by more than 500 times, rotational cross-axis sensitivity and BNEA are reduced by around 10 and 30%, respectively and the PF is improved by around 482 times at a fixed damping ratio of 0.7.

     

RMS voltage sensor based on a variable parallel-plate capacitor made of electroplated copper

We present an advanced RMS voltage sensor based on a variable parallel-plate capacitor using the principle of electrostatic force. The device is fabricated in a micromechanical surface process with a high-aspect ratio actuator, reinforced by copper electroplating employing a sacrificial photo-resist layer. Another copper layer with a coplanar waveguide below the actuator provides separated excitation and sensing electrodes. Flip-chip technology is employed for low-loss electrical connectivity. The presented design has a plate area of up to 3 × 3 mm² and an initial gap distance of only 1.5 μm. We present results achieving a pull-in voltage below 1 V at frequencies from DC up to 1 GHz and sensitivities up to 1 fF/mV.     

Improved micro fluxgate sensor with double-layer Fe-based amorphous core

A rapid manufacturing process for the micro solenoid fluxgate sensor integrating multilayer amorphous ribbon core has been established, which combines the micro assembling method and the MEMS technologies. We select Fe-based amorphous soft magnetic ribbons for core materials and have fabricated the micro fluxgate sensors by MEMS technologies, with single-layer core and double-layer core respectively. The micro fluxgate sensors with double-layer core show the advantageous to that with single-layer core and exhibit sensitivity of 1089.2 V/T at excitation current of 120 mA rms, wide linear range of ?900 to 900 μT and power consumption of 24.48 mW. The noise power density of the single core fluxgate sensor is 2.48nT/Hz^1/2@1 Hz.     

An all-silicon single-wafer micro-g accelerometer with a combinedsurface and bulk micromachining process

This paper reports an all-silicon fully symmetrical z-axis micro-g accelerometer that is fabricated on a single-silicon wafer using a combined surface and bulk fabrication process. The microaccelerometer has high device sensitivity, low noise, and low/controllable damping that are the key factors for attaining μg and sub-μg resolution in capacitive accelerometers. The microfabrication process produces a large proof mass by using the whole wafer thickness and a large sense capacitance by utilizing a thin sacrificial layer. The sense/feedback electrodes are formed by a deposited 2-3 μm polysilicon film with embedded 25-35 μm-thick vertical stiffeners. These electrodes, while thin, are made very stiff by the thick embedded stiffeners so that force rebalancing of the proof mass becomes possible. The polysilicon electrodes are patterned to create damping holes. The microaccelerometers are batch-fabricated, packaged, and tested successfully. A device with a 2-mm×1-mm proof mass and a full bridge support has a measured sensitivity of 2 pF/g. The measured sensitivity of a 1-mm×1-mm accelerometer with a cantilever support is 19.4 pF/g. The calculated noise floor of these devices at atmosphere are 0.23 μg/√Hz and 0.16 μg/√Hz, respectively     

A dual-axis MEMS capacitive inertial sensor with high-density proof mass

This paper reports a novel dual-axis microelectromechanical systems (MEMS) capacitive inertial sensor that utilizes multi-layered electroplated gold. All the MEMS structures are made by gold electroplating that is used as a post complementary metal-oxide semiconductor (CMOS) process. Due to the high density of gold, the Brownian noise on the proof mass becomes lower than those made of other materials such as silicon in the same size. The single gold proof mass works as a dual-axis sensing electrode by utilizing both out-of-plane (Z axis) and in-plane (X axis) motions; the proof mass has been designed to be 660 μm × 660 μm in area with the thickness of 12 μm, and the actual Brownian noise in the proof mass has been measured to be 1.2 \({\upmu}{\text{G/}}\sqrt {\text{Hz}}\) (in Z axis) and 0.29 \({\upmu}{\text{G/}}\sqrt {\text{Hz}}\) (in X axis) at room temperature, where 1 G = 9.8 m/s². The miniaturized dual-axis MEMS accelerometer can be implemented in integrated CMOS-MEMS accelerometers to detect a broad range of acceleration with sub-1G resolution on a single sensor chip.     

Design and fabrication of a new miniaturized capacitive accelerometer

A novel mercury-based capacitive accelerometer has been designed and fabricated. The accelerometer features a highly symmetrical cubic structure and capacitive coupling of the high-frequency input voltage, which uses a mercury drop for spring material and flexible interconnection layer between the capacitor plates. The device is mounted on a standard IC package with dimensions of 5 mm × 5 mm × 5 mm. The structure, working principle, fabrication, and mathematical model of the accelerometer are presented. Since the accelerometer uses a mercury drop as its sensitive electrode instead of a solid, which is commonly used in traditional accelerometers, the conflict between the requirements of high shock and high sensitivity is solved. The measurement results show a sensitivity of 0.2 mV (m s⁻²)⁻¹ with a corresponding resolution of 0.01 ms⁻², off-axis sensitivity of <5% and good linearity in the output voltage for accelerations up to at least 10 m s⁻².     

Capacitive flexible pressure sensor: microfabrication process and experimental characterization

Kapton-based flexible pressure sensor arrays are fabricated using a new technology of film transfer. The sensors are dedicated to the non-invasive measurement of pressure/force in robotic, sport and medical applications. The sensors are of a capacitive type, and composed of two millimetric copper electrodes, separated by a polydimethylsiloxane (PDMS) deformable dielectric layer. On the flexible arrays, a very small curvature radius is possible without any damage to the sensors. The realized sensors are characterized in terms of fabrication quality. The inhomogeneity of the load free capacitances obtained in the same array is ±7 %. The fabrication process, which requires 14 fabrication steps, is accurate and reproducible: a 100 % transfer yield was obtained for the fabrication of 5 wafers gathering 4 sensor arrays each (215 elementary sensors). In the preliminary electro-mechanical characterization, a sensor (with a PDMS dielectric layer of 660 μm thickness and a free load capacitance of 480 fF) undergoes a capacitance change of 17 % under a 300 kPa normal stress.     

A rotary comb-actuated microgripper with a large displacement range

This paper reports a novel design for electrostatic microgrippers. The new structure utilizes rotary comb actuators to solve the pull-in problem of microgrippers during large displacement manipulation and therefore avoids the widely used conversion systems which necessitate a high driving voltage. The gripper is fabricated using a SOI process with a 60 μm structural layer. Test results show the gripper obtained a displacement of 94 μm with an applied voltage of 100 V. An animal hair is gripped to demonstrate the applicability of the gripper for micro object manipulations.     

Design, fabrication and analysis of micromachined high sensitivity and 0% cross-axis sensitivity capacitive accelerometers

This paper presents the design and fabrication of three MEMS based capacitive accelerometers. The first design illustrates the achievement of an accelerometer with 0% cross-axis sensitivity and has been fabricated using PolyMUMPs, a multi-user surface-micromachining process. A unidirectional parallel plate configuration is utilized in this design to illustrate the achievement of 0% cross-axis sensitivity and an acceptable performance range. In addition, a method is introduced to improve the sensitivity of a capacitive sensor employing a transverse configuration based on the relationship of initial gaps setup in comb-finger arrangements. A design based on this technique and the PolyMUMPs fabrication process is illustrated which demonstrates a sensitivity value of 4.07 fF/μm, with a nonlinearity of 2.05% for a ±3 μm sensor operating range. The last design based on this method and the SOIMUMPs fabrication process exhibits a sensitivity of 3.45 pF/μm for ±1 μm operating range of the sensor.     

A miniaturized bulk micromachined triaxial accelerometer fabricated using deep reactive etching through a multilevel thickness membrane

We present the design, fabrication and characterization of an application specific triaxial accelerometer for post-surgery heart monitoring. The accelerometer chip is designed as a 2?×?4?×?1.2?mm³ chip with nominal acceleration range of?±4?g and frequencies below 50?Hz. It has been fabricated using a multiproject wafer service with an additional deep reactive ion etching process to obtain controlled etch-through of membranes of 3, 23 and 400?μm thicknesses simultaneously. The novelty of the work presented here is the bulk micromachining technique using both deep reactive dry etching and alkali-based anisotropic wet etching of single crystal (100) silicon wafers used to obtain a space efficient design. Proof of concept is demonstrated with preliminary testing, with an acceleration sensitivity of?~0.04 mv/V/g for out of plane (z axis) acceleration.     

An in-plane high-sensitivity, low-noise micro-g silicon accelerometer with CMOS readout circuitry

A high-sensitivity, low-noise in-plane (lateral) capacitive silicon microaccelerometer utilizing a combined surface and bulk micromachining technology is reported. The accelerometer utilizes a 0.5-mm-thick, 2.4/spl times/1.0 mm/sup 2/ proof-mass and high aspect-ratio vertical polysilicon sensing electrodes fabricated using a trench refill process. The electrodes are separated from the proof-mass by a 1.1-/spl mu/m sensing gap formed using a sacrificial oxide layer. The measured device sensitivity is 5.6 pF/g. A CMOS readout circuit utilizing a switched-capacitor front-end /spl Sigma/-/spl Delta/ modulator operating at 1 MHz with chopper stabilization and correlated double sampling technique, can resolve a capacitance of 10 aF over a dynamic range of 120 dB in a 1 Hz BW. The measured input referred noise floor of the accelerometer-CMOS interface circuit is 1.6/spl mu/g//spl radic/Hz in atmosphere.     

Design,fabrication and testing of a piezoelectric energy microgenerator

This article presents the design, fabrication and characterization of a micromachined energy harvester utilizing aluminium nitride (AlN) as a piezoelectric thin film material for energy conversion of random vibrational excitations. The harvester was designed and fabricated using silicon micromachining technology where AlN is sandwiched between two electrodes on top of a silicon cantilever beam which is terminated by a silicon seismic mass. The harvester generates electric power when subjected to mechanical vibrations. The generated electrical response of the device was experimentally evaluated at various acceleration levels. A maximum power of 34.78 μW was obtained for the device with a seismic mass of 5.6 × 5.6 mm² at an acceleration value of 2 g. Various fabricated devices were tested and evaluated in terms of the generated electrical power as well as the resonant frequency.     

Bulk disc resonators radial and wineglass mode resonance characterization for mass sensing applications

This paper reports the design and fabrication of bulk mode micromechanical disc resonators operating in radial and wine-glass modes of excitation. The reported structures are fabricated utilizing a single crystal SOI wafer through micromachining processes. Both resonators are fabricated on a device layer with a thickness of 20 µm and a gap size of 1.75 µm between the resonant beam and surrounding electrodes. Four anchors support the resonant disc using a T-shaped connection stem. The designed structures resonate at 2.87 and 3.99 MHz, in wine glass and radial modes respectively, and are electrostatically actuated by a DC voltage of 110 V between the disc and electrodes. The designed resonators show high quality factors while operating in air, 1,1876.2 for wine-glass and 7380 for radial. In addition, the resonators are used for distributed and point mass measurements of a sputtered gold metal layer. The wine glass resonator shows a frequency down shift of 1 kHz for a 44 ngr gold point mass, and a frequency shift of 22 kHz for a distributed mass of 83 µgr. Same test is performed on radial mode resonator and a resonance frequency shift of 1.24 and 25.54 kHz was observed for point and distributed mass, respectively in air and at room temperature.     

Pull-in-based μg-resolution accelerometer: Characterization and noise analysis

The pull-in time (t_pi) of electrostatically actuated parallel-plate microstructures enables the realization of a high-sensitivity accelerometer that uses time measurement as the transduction mechanism. The key feature is the existence of a metastable region that dominates pull-in behavior, thus making pull-in time very sensitive to external accelerations. Parallel-plate MEMS structures have been designed and fabricated using a SOI micromachining process (SOIMUMPS) for the implementation of the accelerometer. This paper presents the experimental characterization of the microdevices, validating the concept and the analytical models used. The accelerometer has a measured sensitivity of 0.25 μs/μg and a bandwidth that is directly related to the pull-in time, BW = 1/2t_pi ≈ 50 Hz. These specifications place this sensor between the state of the art accelerometers found both in the literature and commercially. More importantly, the resolution of the measurement method used is very high, making the mechanical-thermal noise the only factor limiting the resolution. The in-depth noise analysis to the system supports these conclusions. The total measured noise floor of 400 μg (100 μs) is mainly due to the contribution of the environmental noise, due to lack of isolation of the experimental setup from the building vibrations (estimated mechanical thermal noise of 2.8 μg/√Hz). The low requirements of the electronic readout circuit makes this an interesting approach for high-resolution accelerometers.     

2-DOF vibratory gyroscope fabricated by SU-8 based UV-LIGA process

This paper reports fabrication of 2-DOF vibratory gyroscope using SU-8 based UV-LIGA process. The device structure is designed to be symmetrical in order to match the resonance frequencies of drive and sense mode oscillators and also to minimize their relative temperature dependent drift. The overall arrangement is such that the two vibration modes do not affect each other and therefore, mechanical decoupling is achieved which helps in minimizing bias drift. The design is optimized to be compatible with the UV-LIGA process having 10 μm thick electroformed nickel as structural layer. Photolithography to create 11 μm thick SU-8 molds for electroforming sacrificial copper and structural nickel layer is optimized using multiple exposure technique that ensures near vertical side walls. Since the highly cross-linked SU-8 remaining after development is difficult to remove reliably from high aspect ratio structures without damage or alteration to the electroformed metals, a 2.45 GHz MW plasma etching process is developed with CF₄/O₂ mixes. The fabricated device is checked for off-plane misalignment between the stationary and movable comb fingers using white light interferometry and it is found to be almost negligible. Also, the prototype device is characterized for amplitude and phase spectral responses using Polytec MSA-500 Micro System Analyzer. The drive and sense mode resonance frequencies are observed at 7.3 and 7.1 kHz respectively against the mode matched designed frequency of 7.5 kHz.     

Design and fabrication of submicrometer, single crystal Siaccelerometer

A lateral accelerometer has been designed, simulated, and fabricated using a 3-mask high-aspect ratio technology. Electron beam lithography and high-density plasma etching in an inductively coupled plasma source enabled aspect ratios >30 to be achieved. This makes possible beams with very small spring constants. Combining the ability to measure very small displacement of a proof mass due to narrow capacitive gaps between comb fingers, a highly sensitive accelerometer can be obtained. The fabricated accelerometer with 1 μm beams and 0.2 μm comb gaps had a spring constant of 0.127 N/m, which is close to the calculated values of 0.146 N/m. Based on the capacitance measurements, the accelerometer sensitivity is calculated to be 6.3 fF/g. Reducing the beam width to 0.4 μm lowered the spring constant to 0.03 N/m, and an improved equivalent sensitivity of 79.2 fF/g is calculated. The minimum detectable acceleration is on the order of a few microgravity over a range of hundreds of gravities