Optical, electrical and magnetic properties of Co3O4 nanocrystallites obtained by thermal decomposition of sol–gel derived oxalates

Nanocrystallites of tricobalt tetraoxide (Co₃O₄) have been synthesized by sol–gel process using cobalt acetate tetrahydrate, oxalic acid as precursors and ethanol as a solvent. The process comprises of gel formation, drying at 80 °C for 24 h to obtain cobalt oxalate dihydrate (α-CoC₂O₄·2H₂O) followed by calcination at or above 400 °C for 2 h in air. These results combined with thermal analysis have been used to determine the scheme of oxide formation. The room temperature optical absorption spectra exhibits blue shift in both (i) ligand to metal (p(O²⁻) → e_g(Co³⁺), 3.12 eV), and (ii) metal to metal charge transfer transitions (a) t_2g(Co³⁺) → t₂(Co²⁺), 1.77 eV, (b) t₂(Co²⁺) → e_g(Co³⁺), 0.95 eV together with the d–d transitions (0.853 and 0.56 eV) within the Co²⁺ tetrahedra. The temperature dependent ac electrical and dielectric properties of these nanocrystals have been studied in the frequency range 100 Hz to 15 MHz. There are two regimes distinguishing different temperature dependences of the conductivity (70–100 K and 200–300 K). The ac conductivity in both the temperature regions is explained in terms of nearest neighbor hopping (NNH) mechanism of electrons. The carrier concentration measured from the capacitance (C)–voltage (V) measurements is found to be 1.05 × 10¹⁶ m⁻³. The temperature dependent dc magnetic susceptibility curves under zero field cooled (ZFC) and field cooled (FC) conditions exhibit irreversibilities whose blocking temperature (T_B) is centered at 35 K. The observed Néel temperature (T_N  25 K) is significantly lower than the bulk Co₃O₄ value (T_N = 40 K) possibly due to the associate finite size effects.     

Fluorescence and nonlinear optical properties of non-aggregating hexadeca-substituted phthalocyanine

Highly non-aggregating hexadeca-substituted phthalocyanine (Pc) complexes were prepared and their fluorescence and nonlinear optical properties were studied. Three visible fluorescence bands were observed when the Pc complexes were excited at 355 nm and found to be concentration dependent. They are attributed to the optical transitions S₂ → S₀ at 415 nm, T₂ → T₁ at 630 nm, and S₂ → S₁ at 755 nm. Nonlinear absorptive and refractive effects were measured with the help of Z-scan technique. Saturation absorption was observed at 632.8 nm where the nonlinear absorption coefficient is found to be very large (β = −2.8 × 10⁻² cm/W) and the refractive nonlinear coefficient γ = −9.5 × 10⁻¹¹ cm²/W. In the transparency domain at 532 nm, reverse absorption saturation is observed and β and γ are found to be 17.5 and 15.5 times smaller, respectively. Optical limiting performances are measured in the absorption and transparency domains. Purely refractive-based optical limiting at 632.8 nm is found to have a threshold of 0.16 kW/cm², lower than the reverse absorption saturation and refractive-based optical limiting of 0.90 kW/cm² at 532 nm.     

Effect of Mg and Ti doping on the luminescence of Y2O2S:Eu

The Y₂O₂S:Eu³⁺,Mg²⁺,Ti^IV (x_Eu = 0.028, x_Mg = 0.086, x_Ti = 0.03) materials were prepared with the flux fusion method. According to X-ray powder diffraction, the materials had the hexagonal crystal structure. The emission of Y₂O₂S:Eu³⁺,Mg²⁺,Ti^IV was centered at 627 nm (λ_exc : 250 nm) due to the ⁵D₀ → ⁷F₂ transition of Eu³⁺. The excitation spectra (λ_em : 627 nm) showed broad bands at 240 and 320 nm due to the O²⁻ → Eu³⁺ and S²⁻ → Eu³⁺ charge transfer transitions, respectively. The latter band can also overlap with the Ti → Eu³⁺ energy transfer. In the excitation spectra with synchrotron radiation, in addition to the O²⁻ → Eu³⁺ and S²⁻ → Eu³⁺ charge transfer transitions, excitation over the band gap was observed at 4.8 eV (258 nm). The red persistent luminescence due to the ⁵D₀ → ⁷F₂ emission from Eu³⁺ residing in the regular Y³⁺ site of the host was ca. 10 min with 1 min fluorescent lamp irradiation. In addition, a very broad band was observed at 600 nm probably due to the Ti³⁺ emission.     

Luminescence properties of Ammonium Silicon Fluoride films prepared by vapour etching technique

Photoluminescence (PL) properties of Ammonium Silicon Fluoride samples prepared by vapour etching technique are investigated with respect to excitation energy, excitation intensity and temperature. Ageing effect at ambient conditions is also examined by Fourier Transform Infrared Spectroscopy. PL peak maximum blue shifts as the excitation intensity increases and saturates at 2.106 eV. Temperature-dependent variations in PL peak energies and intensities cannot be thoroughly elucidated via Quantum Confinement model alone and require consideration of recombination rates at Si–SiO_x interface. Temperature dependence of integrated PL intensity is treated by a three-component functional form.Infrared absorption bands at 1060 cm^− 1, 1113 cm^− 1 and 1230 cm^− 1 attain saturation with time. Agreement between the saturation time of SiO_x longitudinal optic mode at 1230 cm^− 1 and that deduced from PL measurements in literature is noted. It is shown that PL emissions are intrinsic in nature and have a significant excitonic contribution.     

Biosensor enhanced by glucose oxidase biomimetic membrane containing the platinum and silica nanoparticles

In this paper, glucose biosensor is fabricated with immobilization of glucose oxidase (GOx) in platinum and silica sol. The glucose biosensor combined with Pt and SiO₂ nanoparticles could make full use of the properties of nanoparticles. A set of experimental results indicates that the current response for the enzyme electrode containing platinum and silica nanoparticles increases from 0.32 µA cm^− 2 to 33 µA cm^− 2 in the solution of 10 mM β-D-glucose. The linear range is 3 × 10^− 5 to 3.8 × 10^− 3 M with a detection limit of 2 × 10^− 5 M at 3σ. The effects of the various volume ratios of Pt and SiO₂ sols with respect to the current response and the stability of the enzyme electrodes are studied.     

The structural and electrical property of CuCr1 − xNixO2 delafossite compounds

A series of CuCr_1 − xNi_xO₂ (0 ≤ x ≤ 0.06) polycrystalline samples was prepared. The electrical conductivity was measured in the temperature range of 160–300 K. It was found that the electrical conductivity (σ) increases rapidly with the doping of Ni²⁺ ions. At room temperature, the σ is 0.047 S cm^− 1 for the sample with x = 0.06, which is two orders of magnitude larger than that of the CuCrO₂ sample (9.49E− 4 S cm^− 1). The Seebeck coefficients are positive for all samples, which indicate p-type conducting of the samples. The experimental results imply that it is possible to get higher electrical conductivity p-type transparent conducting oxides (TCO) from CuMO₂ by doping with divalent ions.     

Some physical properties of Sn-doped CdO thin films prepared by chemical bath deposition

Undoped and Sn-doped CdO thin films were prepared by the chemical bath deposition method by means of a procedure that improves the deposition efficiency. All as-grown films were crystallized in the cubic structure of cadmium peroxide (CdO₂) and transformed into CdO with a cubic structure after an annealing process. The as-grown films have a high resistivity (> 10⁶ Ω cm) and an optical bandgap around 3.6 eV. Undoped CdO displays an optical bandgap around 2.32–2.54 eV and has an electrical conductivity of 8 × 10^− 4 Ω cm. The Sn incorporation into CdO produces a blue shift in the optical bandgap (from 2.55 to 2.84 eV) and a decrease in the electrical conductivity.The deposition procedure described here gives colloid-free surface thin films as indicated by the surface morphology analysis.     

Spectral analysis of RE (RE = Sm, Dy, and Tm): P2O5–Al2O3–Na2O glasses

Phosphate glasses in the compositions of 70P₂O₅–15Al₂O₃–14Na₂O–1RE³⁺ (RE = Sm, Dy, and Tm) (mol%) were prepared by melt-quenching technique and characterized optically. The differential thermal analysis (DTA) profile of the host glass was carried out to confirm its thermal stability. For all the glasses absorption, photoluminescence and decay measurements have also been carried out. These glasses have shown strong emission and absorption bands in visible and near-infrared (NIR) region. From the measured absorption spectra, Judd–Ofelt (J–O) intensity parameters (Ω₂, Ω₄ and Ω₆) have been calculated for all the studied ions. For Sm³⁺ doped glass, four emission bands centered at 562 nm (⁴G_5/2 → ⁶H_5/2), 598 nm (⁴G_5/2 → ⁶H_7/2), 644 nm (⁴G_5/2 → ⁶H_9/2), and 704 nm (⁴G_5/2 → ⁶H_11/2) have been observed with 402 nm (⁶H_5/2 → ⁴F_7/2) excitation wavelength. Of them, 598 nm (⁴G_5/2 → ⁶H_7/2) has shown a bright orange emission. With regard to Dy³⁺ doped glass, a blue emission band centered at 486 nm (⁴F_9/2 → ⁶H_15/2) and a bright yellow emission at 575 nm (⁴F_9/2 → ⁶H_13/2) have been observed, apart from 662 nm (⁴F_9/2 → ⁶H_11/2) emission transition with an excitation at 388 nm (⁶H_15/2 → ⁴I_13/2,⁴F_7/2) wavelength. Emission bands of 650 nm (¹G₄ → ³F₄) and 785 nm (¹G₄ → ³H₅) transitions for the Tm³⁺ doped glass, with an excitation wavelength at 466 nm (³H₆ → ¹G₄), have also been observed. The stimulated emission cross-sections of all the emission bands of RE³⁺ glasses (RE = Sm, Dy, and Tm) have been computed based on their measured full-width at half maximum (FWHM, Δλ) and measured lifetimes (τ_m).     

High-temperature stability of the mechanical and optical properties of Si–B–C–N films prepared by magnetron sputtering

Quaternary Si–B–C–N materials are becoming increasingly attractive due to their possible high-temperature and harsh-environment applications. In this work, amorphous Si–B–C–N films with two compositions (Si₃₄B₉C₄N₄₉ and Si₃₆B₁₃C₇N₄₀) and low contamination level (H + O + Ar < 4 at.%) were deposited on silicon substrates by reactive dc magnetron co-sputtering using two different targets and gas mixtures. Thermal stability of these films was investigated in terms of composition, bonding structure, as well as mechanical and optical properties after annealing in helium up to a 1300°C substrate limit. Films with a high nitrogen content (Si₃₄B₉C₄N₄₉, i.e. N/[Si + B + C]~ 1.0) were found to be stable up to 1300°C. After annealing, the hardness and elastic recovery of those films slightly increased up to 27 GPa and 84%, respectively, and the reduced Young's modulus remained practically constant (~ 170 GPa). The refractive index and the extinction coefficient at 550 nm were evaluated at 2.0 and 5 × 10^− 4, respectively, and the optical band gap was approximately 3.0 eV. In contrast, films with a lower nitrogen content (Si₃₆B₁₃C₇N₄₀, i.e. N/[Si + B + C]~ 0.7) were stable only up to 1200°C. Both Si–B–C–N materials studied here exhibited extremely high oxidation resistance in air up to the 1300°C substrate limit.     

An organic nonvolatile memory using space charge polarization of a gate dielectric

We realize a nonvolatile and rewritable memory effect in an organic field-effect transistor (OFET) structure using polymethylmethacryrate (PMMA) dispersed with 10-methyl-9-phenylacridinium perchlorate (MPA⁺ClO₄⁻) as a gate dielectric. Applying a voltage between a top source-drain electrode and a bottom gate electrode induces electrophoresis of two ions of MPA⁺ and ClO₄⁻ towards the corresponding electrodes in the memory devices. The drain currents of the memory devices markedly increase from 10^− 9 A to 10^− 2 A under no gate voltage condition due to the strong space charge polarization effect. Our memory devices have excellent electrical bistability and retention characteristics, i.e. the memory on/off ratio reached 10⁷ and the drain current maintained 40% of the initial value after 10⁴ s.     

Electrical and optical properties of 12CaO·7Al2O3 electride doped indium tin oxide thin film deposited by RF magnetron co-sputtering

12CaO·7Al₂O₃ electride (C12A7:e⁻) doped indium tin oxide (ITO) (ITO:C12A7:e⁻) thin films were fabricated on a glass substrate by an RF magnetron co-sputtering system with increasing number of C12A7:e⁻ chips (from 1 to 7) and at various oxygen partial pressure ratios. The optical transmittance of the ITO:C12A7:e⁻ thin film was higher than 70% in the visible wavelength region. In the electrical properties of the thin film, a decrease of the carrier concentration from 2.6 × 10²⁰ cm^− 3 to 2.1 × 10¹⁸ cm^− 3 and increase of the resistivity from 1.4 × 10^− 3 Ω cm to 4.1 × 10^− 1 Ω cm were observed with increasing number of C12A7:e⁻ chips and oxygen partial pressure ratios. It was also observed that the Hall mobility was decreased from 17.27 cm²·V^− 1·s^− 1 to 5.13 cm²·V^− 1·s^− 1. The work function of the ITO thin film was reduced by doping it with C12A7:e⁻.     

Synthesis and electroluminescence properties of zinc(2,2′ bipyridine)8-hydroxyquinoline

New electroluminescent material, namely zinc(2,2′ bipyridine)8-hydroxyquinoline [Zn(Bpy)q] has been synthesized and characterized. A solution of Zn(Bpy)q showed absorption maxima at 382 nm and 342 nm in toluene solution attributed to π − π transition. The photoluminescence spectrum in toluene solution showed peak at 545 nm. The material was stable up to 350 °C. Organic light emitting diode (OLED) fabricated with the structure ITO/α-NPD/Zn(Bpy)q/Alq₃/LiF/Al exhibits a broad electroluminescence peak at 548 nm. The maximum current efficiency of OLED was 1.34 cd/A at 5 V and the maximum power efficiency 0.84 lm/W at 5 V.     

Deposition of low-resistivity gallium-doped zinc oxide films by low-temperature radio-frequency magnetron sputtering

The transparent and conductive gallium-doped zinc oxide (GZO) film was deposited on 1737F Corning glass using the radio-frequency (RF) magnetron sputtering system with a GZO ceramic target. (The Ga₂O₃ contents are approximately 5 wt. %). In this study, the effect of the sputtering pressure on the structural, optical and electrical properties of GZO films upon the glass or polyester film (PET) substrate was investigated and discussed in detail. The GZO film was grown under a steady RF power of 400 W and a lower substrate temperature from room temperature up to 200 °C. The crystal structure and orientation of GZO thin films were examined by X-ray diffraction. All of the GZO films under various sputtering pressures had strong c-axis (002)-preferred orientation. Optical transparency was high (> 80%) over a wide spectral range from 380 nm to 900 nm. According to the experimental data, the resistivity of a single-layered GZO film was optimized at  8.3 × 10^− 4 Ω cm and significantly influenced by the sputtering pressure. In further research, the sandwich structure of the GZO film/Au metal/GZO film was demonstrated to improve the electrical properties of the single-layered GZO film. The resistivity of the sandwich-structured GZO film was around 2.8 × 10^− 4 Ω cm.     

A Spectrophotometric Study of the Interaction of Uranyl Ions with Orthosilicic Acid and Polymeric Silicic Acids in Aqueous Solutions

The interaction of UO ₂ ²⁺ ions with orthosilicic acid Si(OH)₄ and polymeric silicic acids (PSAs) was studied spectrophotometrically. The equilibrium constant of the reaction UO ₂ ²⁺ + Si(OH)₄ = UO₂OSi(OH) ₃ ⁺ + H⁺ in solutions with the ionic strength I = 0.1–0.2 is log K = −2.56±0.09 (log K ⁰ = −2.29±0.09 recalculated to I = 0); the stability constant of the complex UO₂OSi(OH) ₃ ⁺ (I = 0) is log β⁰ = 7.52±0.09. Formation of small oligomers (degree of polymerization n ≤ 4) has virtually no effect on the apparent constant K. When high polymers are formed (n > 100), the apparent equilibrium constant decreases by a factor of 2–3, and the “true” equilibrium constant recalculated to the actual concentration of silanol groups increases by a factor of 3–4. The absorption spectrum of the complex UO₂OSi(OH) ₃ ⁺ was obtained by treatment of the experimental spectra; it has an absorption maximum in the visible range at 422.5 nm, ɛ_422.5 = 35±2 l mol⁻¹ cm^{− 1}. At pH higher than 5–6, complexes of UO ₂ ²⁺ with PSAs of the composition UO₂(≡SiO)₂(≡ SiOH) _{m − 2} are formed. The absorption spectrum of such a complex was obtained.__________Translated from Radiokhimiya, Vol. 47, No. 4, 2005, pp. 315–321.Original Russian Text Copyright © 2005 by Yusov, Fedoseev.     

Emissions properties of Ho: I7 → I8 transition sensitized by Er and Yb in fluorophosphate glasses

Emission properties of Ho³⁺ at 2.0 μm and the energy transfer mechanism between Yb³⁺, Er³⁺ and Ho³⁺ ions in fluorophosphate glasses are investigated. The measured emission spectra show that the ⁵I₇ → ⁵I₈ transition of Ho³⁺ upon 980 nm laser diode excitation is strong. Judd–Ofelt intensity parameters (Ω_λ, λ = 2, 4, 6), spontaneous transition probability (A_rad), radiative lifetime (τ_r), absorption cross section (σ_a), stimulated emission cross section (σ_e) and FWHM ×  for the transition of Ho³⁺: ⁵I₇ → ⁵I₈ are calculated and discussed. The obtained results show that the present Yb³⁺/Er³⁺/Ho³⁺ triply-doped fluorophosphate glass can be identified to be a promising material at 2.0 μm emission.     

Effect of oxygen pressure of SiOx buffer layer on the electrical properties of GZO film deposited on PET substrate

The present work was made to investigate the effect of oxygen pressure of SiO_x layer on the electrical properties of Ga-doped ZnO (GZO) films deposited on poly-ethylene telephthalate (PET) substrate by utilizing the pulsed-laser deposition at ambient temperature. For this purpose, the SiO_x buffer layers were deposited at various oxygen pressures ranging from 13.3 to 46.7 Pa. With increasing oxygen pressure during the deposition of SiO_x layer as a buffer, the electrical resistivity of GZO/SiO_x/PET films gradually decreased from 7.6 × 10^− 3 to 6.8 × 10^− 4 Ω·cm, due to the enhanced mobility of GZO films. It was mainly due to the grain size of GZO films related to the roughened surface of the SiO_x buffer layers. In addition, the average optical transmittance of GZO/SiO_x/PET films in a visible regime was estimated to be ~ 90% comparable to that of GZO deposited onto a glass substrate.     

Fabrication of Ag and Cu nanowires by a solid-state ionic method and investigation of their third-order nonlinear optical properties

Ag and Cu nanowires were separately fabricated in a direct current electric field using a solid-state ionic method, and characterized by scanning electron microscopy (SEM) and X-ray diffraction (XRD). Their optical nonlinearities induced by 8 ns laser pulses from a frequency-doubled, Nd:YAG laser at 532 nm, were investigated using the Z-scan technique. Experimental results indicate the metal nanowires have obvious positive refractive nonlinearities and reverse saturated absorption behaviors. The self-focusing behaviors of Ag and Cu nanowires can be attributed to Kerr-induced self-focusing of laser radiation, the nonlinear refractive indexes of Ag and Cu nanowires are n₂ = 1.7 × 10^− 11 esu and n₂ = 2.4 × 10^− 11 esu respectively, and the two-photon process of Ag and the one-photon process of Cu are responsible for the difference between Ag and Cu nanowires suspended in de-ionized water in nanosecond nonlinear absorptions.     

Structural investigations of sol–gel derived silicate gels using Eu ion-probe luminescence

Undoped and Eu³⁺-doped CaF₂–SiO₂ gels were prepared by the sol–gel method and their optical properties have been studied. The UV–VIS–NIR absorption and photoluminescence spectra have shown the bands typical for the Eu³⁺ ions transitions. When the Eu-doped gel is annealed at temperatures up to 800 °C (i.e. above the CaF₂ crystallisation peak at 460 °C) the photoluminescence spectra intensity increase, the 590 nm (⁵D₀→⁷F₁) and 620 nm (⁵D₀→⁷F₂) luminescence bands become comparable and a structuring of the 620 nm band is observed. The phonon sidebands peaks associated with the ⁵F₀→⁷D₂ transition of the Eu³⁺ ion were observed at around 1000 and 620 cm⁻¹ and have been assigned to the Si–O and Ca–O bonds, respectively. A phonon sideband signal in the range of 300–400 cm⁻¹ was attributed to Ca–F bonds in the precipitated CaF₂ phase. From the optical absorption, photoluminescence and phonon sidebands spectra we have concluded that in the gels annealed at 800 °C, the Eu³⁺ ions are incorporated into the silica network and in the precipitated CaF₂ phase.     

Ab initio calculations of electronic structures of LiYF4 crystals containing F-type color centers

The electronic structures of LiYF₄ crystals containing F, F⁻, and M color centers (F₂ center) with the lattice structure optimized are studied within the framework of the density functional theory. The calculation indicated that F, F⁻, and M color centers have donor energy levels in the forbidden band. The electronic transition energies from the donor level to the bottom of the conduction band are 3.74 eV, 2.85 eV, and 2.42 eV, respectively, which correspond to the 331 nm, 436 nm, and 513 nm absorption bands. It is predicted that the absorption bands observed at 330 nm, 440 nm, and 505 nm could arise from the F, F⁻, and M centers, respectively, in LiYF₄ crystals.     

VUV–UV spectroscopic properties of RE (RE = Ce, Eu and Tb)-doped KMLn(PO4)2 (M = Ca, Sr; Ln = Y, La, Lu)

The VUV excited luminescent properties of Ce³⁺, Eu³⁺ and Tb³⁺ in the matrices of KMLn(PO₄)₂ (M²⁺ = Ca, Sr; Ln³⁺ = Y, La, Lu) were investigated. The bands at about 155 nm in the VUV–UV excitation spectra are attributed to the host lattice absorption, which indicates that the optical band gap of KMLn(PO₄)₂ is about 8.0 eV. Ce³⁺-doped samples show typical Ce³⁺ emission in the range of 300–450 nm, and the energy transfer from host lattice to Ce³⁺ is efficient. For Eu³⁺-doped samples, the O²⁻–Eu³⁺ CTBs are observed to be at about 228 nm except KSrLu(PO₄)₂:Eu³⁺ (247 nm). As for Tb³⁺-doped samples, typical 4f → 5d absorption bands in the region of 175–250 nm were observed.