华为思科之间的生成树

本人学习网络时间很短，前段时间，单位里更换了核心交换机，由之前的Cisco 4006更换为新的H3C 9508，这时，出现了一个不大不小的问题．     

DPA话筒“金口玉言” 挑战20年保质极限——丹麦DPA公司十周年纪念珍藏版金话筒4006-AE

DPA 4006-AE具有非常出色的灵敏度、平滑的频率响应和超低的噪声等优异性能。它真实、透明、自然的拾音效果近乎完美,面世以来,好评如潮。4006-AE是一种无方向性电容话筒,为了得到更清晰的声音,该话筒内置了一个无输出变压器的前置放大器。这种设计提高了话筒的灵敏度,可避免低频信号在高电平时出现饱和的风险。而近于苛求的工艺流程和多项独特专利技术的运用,更保证了它高超的品质恒久不变。DPA专业话筒的研发历史可以追溯到六十多年前丹麦B&K公司创业早期(以生产音频测试仪器见长)。在此期间,他们制造出了许多经典的传世之作。例如大…     

4006企业直线介绍

4006企业直线业务介绍： 中国网通4006企业直线主被叫分摊付费电话业务，是指中国网通为政府、企业、事业单位用户核配一个全国唯一的十位数字4006企业直线号码作为热线电话，在全国各地固定电话、小灵通、移动电话【包括移动和联通手机】均可拨打；当用户拨打4006企业直线号码时，通话费用由主叫市话费、由被叫付长途费的主被叫分摊付费电话业务；4006企业直线业务主要适用于需要建立全国统一的客户服务中心／呼叫中心的各类单位，该业务是中国网通在关注企业成本、减轻客户成本支出、抑制恶意呼叫问题上而推出的业务，是800免费电话的升级版，被喻为企业成长之翼。     

自制电容／电感表

本文介绍的电容/电感表能够测试10pF～10μF范围内的电容及1μH—1H的电感元件。工作原理:电路如图1所示。由开关S_1选取的测试信号(方波)产生出的脉冲电流,流过待测电感,电流变化将引起电压的变化,这种变化经取样并受电容/电感表的监控,最后被显示出来。测试电容时亦一样。待测电容上的平均充电、放电的电流     

惠威M4006HT家庭影院音箱系统

当我在惠威成都公司的听音室试听这套M4006HT音箱的时候,我想我的感受除了惊讶还是惊讶,甚至有点震撼。通常,大型的Hi-End音箱容易让人觉得震撼,相比之下,我说对外形纤小、全套售价才8000多元的M4006HT觉得有点震撼,你相     

氮化H2-O2合成薄栅介质的击穿特性

研究了14～16nm的H2-O2合成薄栅介质击穿特性.实验发现,N2O气氛氮化H2-O2合成法制备的薄栅介质能够有效地提高栅介质的零时间击穿特性.H2-O2合成法制备的样品,其击穿场强分布特性随测试MOS电容面积的增加而变差,而氮化H2-O2合成薄栅介质的击穿特性随测试MOS电容面积的增加基本保持不变.对于时变击穿,氮化同样能够明显提高栅介质的击穿电荷及其分布.     

氮化H2-O2合成薄栅介质的击穿特性

研究了14～16nm的H2-O2合成薄栅介质击穿特性.实验发现,N2O气氛氮化H2-O2合成法制备的薄栅介质能够有效地提高栅介质的零时间击穿特性.H2-O2合成法制备的样品,其击穿场强分布特性随测试MOS电容面积的增加而变差,而氮化H2-O2合成薄栅介质的击穿特性随测试MOS电容面积的增加基本保持不变.对于时变击穿,氮化同样能够明显提高栅介质的击穿电荷及其分布.     

日立公司生产的第二代硒砷碲摄象管性能参数

直径J总长(机m)400电视行时的!中心极限分辨残象管型备注(爪机)调制深度(%){率(电视行)(%)H8397B1810550900H8398B1810550}”00}‘·51H9366B1810650900H9369B25163701,6001。5输出电容低的管型(1.spF)输出电容低的管型(2 .spF),取自尹,匕少。丫学会志Vo不.35,No.11,1981日立公司生产的第二代硒砷碲摄象管性能参数 ~~     

引入a—Si：H材料的氮化硅芯片电容

本文研制了两种引入a-Si:H材料的氮化硅芯片电容,其一是作为辅助介质引入的,其二是为了改善Si/Si2N4界面而引入的,文章报导了这两种电容的研制工艺及样品的各种性能,其结构表明,这类电容有希望应用于厚薄膜集成电路.     

低漏电、高击穿电容的HDPCVD工艺研究

介绍了一种低漏电、高击穿电容的HDPCVD(ICPCVD)工艺,并对制备的电容进行了电性能分析和失效分析。通过优化确定了工艺的最佳反应条件,研制出的电容其击穿场强达到8.7MV/cm,在电压加到200V时其电容漏电小于0.5μA。通过与传统的PECVD工艺进行对比,充分体现了HDPCVD(ICPCVD)工艺生长介质的低温生长、低漏电、较高击穿场强、无H工艺等优点。随后的失效分析表明,电容上下电极金属对电容成品率有着很大影响。     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Teleportation of an arbitrary unknown N-qubit entangled state under the controlling of M controllers

A new quantum protocol to teleport an arbitrary unknown N-qubit entangled state from a sender to a fixed receiver under M controllers(M < N) is proposed. The quantum resources required are M non-maximally entangled Greenberger-Home-Zeilinger (GHZ) state and N-M non-maximally entangled Einstein-Podolsky-Rosen (EPR) pairs. The sender performs N generalized Bell-state measurements on the 2N particles. Controllers take M single-particle measurement along x-axis, and the receiver needs to introduce one auxiliary two-level particle to extract quantum information probabilistically with the fidelity unit if controllers cooperate with it.     

A rigorous proof of MIMO channel capacity’s increase with antenna number

It is well known that adding more antennas at the transmitter or at the receiver may offer larger channel capacity in the multiple-input multiple-output（MIMO） communication systems. In this letter, a simple proof is presented for the fact that the channel capacity increases with an increase in the number of receiving antennas. The proof is based on the famous capacity formula of Foschini and Gans with matrix theory.     

Diode-end-pumped Nd:YVO4/LBO lasers with 4.2W continuous-wave output at 457 nm

A continuous-wave (CW) 457 nm blue laser operating at the power of 4.2 W is demonstrated by using a fiber coupled laser diode module pumped Nd: YVO4 and using LBO as the intra-cavity SHG crystal With the optimization of laser cavity and crystal parameters, the laser operates at a very high efficiency. When the pumping power is about 31 W, the output at 457nm reaches 4.2 W, and the optical to optical conversion efficiency is about 13.5% accordingly. The stability of the out putpower is better than 1.2% for 8 h continuously working.     

Call for Papers

正Wireless Body-area Networks The last decade has witnessed the convergence of three giant worlds:electronics,computer science and telecommunications.The next decade should follow this convergence in most of our activities with the generalization of sensor networks.In particular with the progress in medicine,people live longer and the aging of population will push the development of wireless personal networks