共查询到19条相似文献，搜索用时 46 毫秒
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铁电存储单元的设计和测试 总被引：1，自引：0，他引：1
基于被应用于实际设计之中的统一的铁电器件模型,详细讨论了２Ｔ ２Ｃ组态的铁电破坏性读出存储器单元的设计。在此基础上,设计和制造了分立元件的单元测试电路。通过与普通电容的对比实验,证实了铁电破坏性读出随机读取存储器与普通随机读取存储器不同的工作原理和模式。进而获得了被测ＦＲＡＭ单元的特性波形和铁电材料存储特性的有关数据。这些工作为进一步进行大规模铁电存储器的研究作了准备。 相似文献
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基于VLSI的信息处理系统空间应用时容易遭受单粒子翻转效应(SEU:Single Event Upset)的影响.基于结构冗余的三模冗余(TMR:Three Module Redundancy)和基于信息冗余的错误检纠错(EDAC:Error Detection and Correction)是两种常见的系统级抗单粒子翻转的容错方法,被广泛应用于空间信息处理系统中.从可靠性改进、存储资源占用、硬件实现代价以及实现延时等四个方面,对两种方法进行了性能分析和仿真实验.性能分析和仿真实验结果表明,EDAC方法适合应用于基本数据宽度较大、存储资源受限、实时性要求不高的应用中,结构TMR方法适合应用于基本数据宽度较小、存储资源充足、实时性要求较高的应用中. 相似文献
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介绍了铁电存储器的存储原理,同时对两种铁电存储器(铁电随机存取存储器和铁电场效应晶体管存储器)的研究进展、当前存在的问题以及我国目前在这一领域的研究现状进行了简单介绍,并对今后的技术发展进行了展望。 相似文献
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RAMTRON公司生产的并行接口高性能铁电存储器FM1808是NV -SRAM的理想替代产品。文中介绍了FM1808的性能特点、引脚功能和工作原理 ,同时重点介绍了铁电存储器的应用特点及与其它类型存储器之间的应用差别 ,给出了FM1808的设计应用要点 相似文献
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铁电存储器中Pb(Zr,Ti)O3集成铁电电容的制备 总被引：1，自引：0，他引：1
在铁电不挥发存储器 (FERAM)技术中 ,集成铁电电容的制备是关键工艺之一。文中提出一种制备集成铁电电容的改进工艺 :采用 lift-off技术在衬底样品表面淀积铁电电容 Pt/Ti下电极 ,然后用 Sol-Gel方法制备 PZT薄膜。在 PZT薄膜未析晶前 ,先将它加工成电容图形 ,再高温退火成为 PZT铁电薄膜。最后完成铁电电容 Pt上电极。与传统工艺相比 ,改进后的工艺能保持 PZT铁电薄膜与金属上电极之间良好的接触界面。测试结果表明 ,工艺条件的变动不会影响 PZT铁电薄膜的成膜和结构 ,从而可得到性能优良的铁电电容。 相似文献
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《Advanced Electronic Materials》2017,3(1)
Novel multiferroic materials have attracted increasing attention in recent years. Aurivillius bismuth‐layer structured Bi4Ti3O12·n BiFeO3 (BTFO: n = 1–3, 5) compounds with potential multiferroic properties are such a compound. However, the data on these BTFOs are ambigious, inconsistent, and incomplete. Therefore BTFOs were grown into single crystals for a systematic evaluation. Their crystal structures and microstructures show that intergrowth of layer structure occurs easily in this class of material. Their ferroelectric measurements show strong anisotropy and dielectric peaks at high temperature, accompanied by an abnormal loss that corresponds to their polar phase transition. At room temperature, ferroelectric hysteresis loops were successfully measured; the loops show a strong dependence in their polarization and coercive field on different values of n and anisotropy. Magnetic measurement shows that all the single crystals display magnetic transitions at high temperatures and weak ferromagnetism at room temperature. Electron spin resonance (ESR) results show the coexistence of ferromagnetic and paramagnetic signal components in all the compounds. Scanning probe microscope measurements show magnetic domains switched together with electric domains by use of an electric field. Therefore we conclude that overall spin disorder with localized order is the character of this class of material, with observed magnetoelectric (ME) coupling. This work could also point the way to novel multiferroic materials in locally magnetic ordered systems. 相似文献
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FM24C16是美国Ramtron公司以铁电晶体为材料生产的铁电存储器(FRAM)，和一般的EEPROM比较，其具有无写延时、超低功耗、无限次写入等超级特性，特别适合在那些对写入时间和次数有较高要求的应用场合，而且其与单片机接口电路简单，应用方便．本文对FM24C16的工作原理、应用电路及应用程序做了比较详细的介绍． 相似文献
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采用磁控溅射制备了结构为Pt/PZT/Pt/Ti/SiO2/Si的PZT铁电电容,并对样品用去离子水处理,通过测试其电滞回线以及漏电流,并结合XPS分析,研究了去离子水对PZT铁电电容的性能影响.结果表明,在去离子水清洗后,由于在PZT表面有吸附,PZT电容电滞回线沿电压轴发生漂移,电子势垒降低,漏电流增大,经过高温热... 相似文献
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Pengfei Hou Cheng Chen Bo Li Shuaizhi Zheng Jinbin Wang Xiangli Zhong Min Liao 《Advanced functional materials》2021,31(19):2011029
Ferroelectric materials feature a switchable spontaneous electric polarization and can enable low-power logic and nonvolatile memories. These applications require reliable and precise control of ferroelectric domains and domain walls in ferroelectric thin films. Mechanical manipulation is a promising route to engineer ferroelectric domains, but it has proved ineffective when going beyond a critical thickness. Here, multi-step 90° switching polarization reversal processes in (111)-oriented PbZr0.2Ti0.8O3 thin films by applying mechanical forces along the direction parallel to the domain bands are reported. By probing the interrelationships between the relevant order parameters, coupled lattice distortion and piezoelectricity is revealed to facilitate domain switching from downward to upward in PbZr0.2Ti0.8O3, a mechanism that is supported by the evolution of domains and electrical performances at different temperatures and under varying pressures, respectively. The multi-step domain reversal processes render PbZr0.2Ti0.8O3 thin films an excellent candidate for multilevel data storage. The study's results have implications for the manipulation of polarization switching in ferroelectrics and open an avenue to domain reversal driven by mechanical loads for the development of next-generation ferroelectric devices. 相似文献