a-C∶F∶H films prepared by PECVD

1　INTRODUCTIONRecentadvancesinultralargescaleintegrationdevices(ULSI)haveledtoaneedfornewintercon netionsmaterialswithlowresistivityandinterlayermaterialswithlowdielectricconstanttoreducetheinterconnetiondelay ,interfere ,noiseandwastagecausedbyparasiticcapacitance .ReplacingAlintradi tionalAl/SiO2 systemwithCu ,ithasreachedaunanimousagreement .MaterialsunderresearchtoreplaceSiO2 mainlycontainPTFE ,SiOF ,F PIanda C∶F∶H .PTFE(κ≈2 .0 )andSiOF(κ≈3.0～3.5 )havelowdielectric…     

Structural and physical properties of permalloy thin films prepared by DC magnetron sputtering at different substrate temperature

Permalloy Ni80Fe20 films have been grown on thermal oxidized Si (111) wafers by magnetron sputtering at well-controlled substrate temperatures of 300, 500, 640 and 780 K in 0.65 Pa argon pressure. The base pressure was about 1×10-4 Pa. The deposition rate was about 5 nm/min for all the films. The structure of the films was studied using X-ray diffraction, scanning electron microscopy and atomic force microscopy. The composition of the films was analyzed using scanning Auger microprobe. The resistance and magnetoresistance of the films were measured using four-point probe technique. The results show that the content of oxygen in the films decreases gradually with raising substrate temperature. In addition, the surface morphology of the films presents notable change with the increasing of the substrate temperature; the residual gases and defects decrease and the grains have coalesced evidently, and then the grains have grown up obviously and the texture of (111) orientation develops gradually in the grow     

Influence of oxygen partial pressure on properties of N-doped ZnO films deposited by magnetron sputtering

N-doped ZnO films were radio frequency(RF)sputtered on glass substrates and studied as a function of oxygen partial pressure(OPP)ranging from 3.0×10-4 to 9.5×10-3 Pa.X-ray diffraction patters confirmed the polycrystalline nature of the deposited films.The crystalline structure is influenced by the variation of OPP.Atomic force microscopy analysis confirmed the agglomeration of the neighboring spherical grains with a sharp increase of root mean square(RMS)roughness when the OPP is increased above 1.4×10-3 Pa.X-ray photoelectron spectroscopy analysis revealed that the incorporation of N content into the film is decreased with the increase of OPP,noticeably N 1s XPS peaks are hardly identified at 9.5×10-3 Pa.The average visible transmittance(380-700 nm) is increased with the increase of OPP(from～17%to 70%),and the optical absorption edge shifts towards the shorter wavelength.The films deposited with low OPP(≤3.0×10-4 Pa)show n-type conductivity and those deposited with high OPP(≥9.0×10-4 Pa)are highly resistive(105Ω·cm)