N沟道耗尽型DMOS场效应管

由西安春秋视讯技术公司经销的耗尽型ＤＭＯＳ场效应管主要有输入阻抗高、输入电容低、开关速度快、导通电阻低、输入输出漏电流和防止二次击穿等特性。该系列器件可广泛用于常开开关、转换、恒流源、固态继电器、线性放大器、电源电路及通信等装置和系统。西安春秋视讯公司所经销的耗尽型ＤＭＯＳ场效应管具有Ｔ０-９２、Ｔ０-２２０和Ｔ０-２４３ＡＡ三种封装形式。表中是该系列器件的主要参数及对应型号。西安春秋视讯公司电话:０２９-８３１３９７２N沟道耗尽型DMOS场效应管     

CMOS模拟开关的导通与截止特性

本文对CMOS模拟开关漏电流、导通电阻、电阻偏差,分布电容及外接负载等对模拟信号传输的影响进行了比较深入的分析,提出了改进开关性能的途径。     

一种基于电荷泵改进型CMOS模拟开关电路

提出了一种基于电荷泵的模拟开关结构.该结构使用电荷泵抬升MOS管的栅电压,从而大大改善开关的导通能力、线性度和动态传输范围.通过仿真验证了开关电路性能,结果表明设计的开关电路在电压0-5V范围内,导通电阻很小且信号损耗很小无失真.因而特别适用于低压系统.     

模拟开关应用与发展趋势

模拟开关原理 模拟开关是连接和中断模拟信号的装置。当导通的时候,将其简单地看作电阻,称为"导通阻抗",见图1。 图2是理想状态下的模拟开关电路     

一种高压模拟开关漏电失效解决方法

高压模拟开关在现代超声领域发挥关键作用.综合考量传输速度、导通电阻、通道隔离度等性能指标,利用红外热成像技术解决了电路漏电的失效问题.该技术包括红外热成像、漏电失效分析、漏电测试、器件原理分析及漏电解决方案等措施,提出了高压模拟开关器件漏电失效问题的通用解决方法,对高压模拟开关漏电失效问题的解决具有较高的参考价值.另外...     

负载开关的发展概况

负载开关基本电路 功率MOSFET是一种具有良好开关特性的器件：导通时其导通电阻RDS（ON）很小;在关断时其漏电流IDSS很小。另外,它的耐压范围很宽,从几十V到几百V,漏极电源范围宽,从几A到几十A,所以非常适合作负载开关。     

离子注入对插入损耗和隔离度影响的研究

基于一个典型的013 μm绝缘体上硅,射频开关电路工艺流程,分析了离子掺杂工艺流程对射频开关导通电阻Ron和关断电容Coff的影响。通过N型MOS管的浅掺杂注入后热退火温度和N型MOS管浅掺杂能量的分批实验,证实了退火温度可影响射频开关的导通电阻和关断电容。进一步实验结果显示,浅掺杂注入的砷（As）和磷（P）注入的剂量是主导因素,各自对导通电阻和关断电容值的影响均为线性且趋势相反,为基于013 μm SOI的射频开关性能的优化提供了依据。     

超小尺寸便携式媒体播放器电源管理方案

MAX14752／MAX14753是8通道／双4通道高压多路复用器。这些器件具有极低的漏电流（最大值为20nA）、低导通电阻（典型值为60Q）和低导通电阻平坦度（典型值为0．03Ω）,极大地减小了开关输入端串联限流电阻引入的电压误差。另外,器件集成了能够对过压和欠压故障进行保护的输入二极管。MAX14752／MAX14753具有增强的性能和保护功能,省去了外部昂贵的光耦,光耦无法提供过压保护,并且在高温应用中具有较大的测量误差。     

介质壁加速器用GaAs光导开关的通态电阻测量

GaAs光导开关可作为紧凑型脉冲功率系统的主要器件,如光导开关在介质壁加速器中的应用。为了研究通态电阻对开关性能的影响,采用平板传输线和同轴电缆作为脉冲形成线,测量了3mm电极间隙的GaAs光导开关的通态电阻。测量结果表明：电极间隙为3mm的GaAs光导开关的通态电阻为14．9Ω,光导开关通态电阻的存在将导致开关热损伤,降低脉冲功率系统的电压输出能力,缩短GaAs光导开关的使用寿命。     

基于漏电流补偿技术的超低漏电模拟开关

为满足各种现代设备控制系统的超高精度信号采集需求,基于新型PN结漏电补偿技术设计了一种超低漏电模拟开关电路。该电路在传统CMOS模拟开关的基础上创新性地引入了新型全温区PN漏电采样和补偿电路,对CMOS模拟开关输入、输出漏电流进行全温区漏电补偿,大幅降低了输入、输出端口漏电流,实现亚纳安级端口漏电流。基于40 V高压CMOS工艺进行电路设计和仿真验证,实测结果显示,在-55～125℃,输入、输出端口漏电流不大于0.75 nA,温漂约为6 pA/℃。     

Turn-on response of the triangular barrier switch

The switch-on time of a GaAs n-type triangular barrier switch (TBS) has been measured from the 10 to 90 percent points to be 300 ps. The real part of the impedance of the 75-µm-diameter TBS changed from 6.7 kΩ in the OFF state to 9.75 Ω (including device contact resistance) in the ON state. After the switching threshold level was exceeded, the current density through the switch increased exponentially with a time constant of 112 ps. The minority-carrier effective base transit time of 86 ps accounted for most of the TBS switch-on time constant.     

Double heterojunction GaAs/GaAlAs I2L inverter

GaAs/GaAlAs double heterojunction I2L inverters with a vertical pnp current source were fabricated by ion implantation and Zn-diffusion into LPE structures. The current gain of the upside-down-operated double heterojunction npn transistor has been improved by a factor of two compared to the gain of the npn transistor of the otherwise similar structure. In addition, the wide-gap junction pnp transistor gives a solution to the critical switch-on problem which can occur when a wide-gap emitter transistor is used for the switching transistor.     

Kink-free polycrystalline silicon double-gate elevated-channelthin-film transistors

The authors report the characterization and analysis of a novel double-gate elevated-channel thin-film transistor (ECTFT) fabricated using polycrystalline silicon. The transistor has a thin channel and thick source/drain regions with a double-gate control. Using this structure, the kink effect in the I-V characteristics of a conventional TFT is completely eliminated, and leakage current at zero gate bias is reduced by over 15 times. The elimination of the kink effect and the significant reduction in leakage current are obtained due to the reduction in lateral electric field at the channel/drain junction region. Two-dimensional (2-D) device simulations are used to study the electric field reduction mechanism in the structure. Experimental results on the forward conduction and gate transfer characteristics of the structure are also presented     

Cryogenic RF switch using III-nitride MOSHFETs

The cryogenic operation of a low-loss RF switch using a AlGaN/GaN metal-oxide semiconductor heterostructure field effect transistor is reported. At 77K the channel resistance of the MOSHFET is three times lower and the contact resistance is 20% lower compared to room temperature. As a result, the performance of the MOSHFET RF switch at 77K is even superior to that at room temperature.     

Arsenic/phosphorus LDD optimization by taking advantage ofphosphorus transient enhanced diffusion for high voltage input/outputCMOS devices

Optimization of a LDD doping profile to enhance hot carrier resistance in 3.3 V input/output CMOS devices has been performed by utilizing phosphorus transient enhanced diffusion (TED). Hot carrier effects in hybrid arsenic/phosphorus LDD nMOSFET's with and without TED are characterized comprehensively. Our result shows that the substrate current in a nMOSFET with phosphorus TED can be substantially reduced, as compared to the one without TED. The reason is that the TED effect can yield a more graded n^- LDD doping profile and thus a smaller lateral electric field. Further improvement of hot carrier reliability can be achieved by optimizing arsenic implant energy. Secondary ion mass spectrometry analysis for TED effect and two-dimensional (2-D) device simulation for electric field and current flow distributions have been conducted. The phosphorus TED effects on transistor driving current and off-state leakage current are also investigated     

AlGaN/GaN metal oxide semiconductor heterostructure field effecttransistor

We report on the AlGaN/GaN metal oxide semiconductor heterostructure field effect transistor (MOS-HFET) and present the results of the comparative studies of this device and a base line AlGaN/GaN heterostructure field effect transistor (HFET). For a 5-μ source-to-drain opening, the maximum current was close to 600 mA/mm for both devices. The gate leakage current for the MOS-HFET was more than six orders of magnitude smaller than for the HFET     

High-transconductance p-channel InGaAs/AlGaAs modulation-doped field effect transistors

A p-channel quantum-well InGaAs/AlGaAs modulation-doped field effect transistor has been fabricated. With a 1-µm gate, the device exhibits transconductances of 17.8 and 89 mS/mm at room temperature and 77 K, respectively. Experimental results indicate an extrinsic transconductance greater than 200 mS/mm is achievable with reduced ohmic contact resistance and gate leakage.     

Application of direct-tunneling gate oxides to high-performance CMOS

The characteristics of direct-tunneling gate oxide metal-oxide semiconductor field effect transistor (MOSFET)s are described. The effect of gate leakage current on MOSFET characteristics drops off as the gate length is reduced. Extremely good DC and AC performance has been realized using ultra-thin oxides down to 1.5 nm. Improved hot-carrier reliability and high oxide breakdown voltage have also been observed.     

Leakage current mechanisms in Hydrogen-passivated fine-grain polycrystalline Silicon on insulator MOSFET's

In this paper we identify various sources of leakage current in thin-film silicon on insulator (SOI) MOSFET's made in hydrogen-passivated small-grain polycrystalline silicon. The action of a parasitic bipolar transistor that can amplify the leakage current due to the thermally generated carriers has been confirmed and characterized. A current gain (β) of more than 6 for the parasitic bipolar transistor has been experimentally measured in accumulation-mode devices, in spite of the presence of a large number of defects. This high gain is attributed to the presence of the vertical electric field, which separates the carriers, thus reducing the probability of recombination. The presence of field-enhanced generation is shown to be the cause of the observed increase in the leakage current with positive front- or back-gate bias for p-channel accumulation-mode devices. Reasonable agreement has been obtained between experimental data and theory based on field-enhanced generation due to Poole-Frenkel barrier lowering.