共查询到18条相似文献,搜索用时 140 毫秒
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带红利的两类索赔风险模型的Gerber-Shiu函数 总被引:1,自引:0,他引:1
本文考虑了一类具有常数红利界限的包含两个独立险种风险模型的Gerber-Shiu罚金折现期望函数,我们假设两个索赔次数过程是独立的Poisson过程和广义Erlang(2)过程.得到了关于Gerber-Shiu罚金折现期望函数满足的积分-微分方程及其边界条件.特别,当这两类索赔额服从同一指数分布时,给出了Gerber-Shiu罚金折现期望函数的精确解.最后给出了一个例子. 相似文献
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本文主要研究保险基金投资中带有随机消费的期望终端资产效用问题,在期望终端财富CARA指数效用最大化目标下,利用随机控制原理,通过求解HJB方程,获得了带有随机消费且随机消费过程分别与风险资产过程和盈余过程相关的最优投资的解析解,结论表明,消费与风险资产和盈余的相关性对保险公司最优决策具有影响. 相似文献
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分数布朗运动环境中混合期权定价 总被引:7,自引:0,他引:7
本文在基本标的资产价格服从几何分数布朗运动且其波动率为常数的假设下,在基础标的资产有红利支付且无风险利率和红利率为非随机函数时求出了各种混合期权的定价公式。 相似文献
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m依赖过程经验风险最小化算法的泛化性能 总被引:3,自引:2,他引:1
m依赖过程作为非独立序列的典型样本,其经验风险最小化的泛化性能不容忽视.为了研究基于m依赖过程经验风险最小化算法的推广能力,我们将基于独立同分布序列的相关结论推广到m依赖过程情形中,进一步利用m依赖过程的Bernstein不等式,建立该序列经验风险最小化原则一致收敛的指数界. 相似文献
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本文主要研究Cox-Ingersoll-Ross(CIR)随机利率模型下保险公司的最优投资和再保险问题.假设保险公司投资于金融市场中的无风险资产、零息债券和多种股票.此外保险公司购买比例再保险合约以转移承保风险.模型中,我们用仿射过程刻画随机利率,通过扩散过程模拟保险公司盈余过程,即用连续过程近似跳过程.保险公司的目标是通过保险投资最大化终端财富的期望幂效用.由于保险公司的财富过程不是自融资过程,在求解过程中,我们先将原优化问题转化为自融资问题,通过随机最优控制方法导出相应的HJB方程,进而得到最优投资、再保险策略和幂效用函数下的最优值函数.我们发现随着风险厌恶系数的增大,公司投资于股票的比例会降低,初始利率越高,保险公司终端财富的值函数越大.最后,我们给出了保费率、利率参数和风险厌恶系数对投资策略、投资效用的敏感性分析. 相似文献
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本文研究了两步保费率下Erlang(2)风险过程,给出了Gerber-Shiu折现罚函数的两个微积分方程及其解或更新方程.在索赔额为指数分布条件下得到了两个与破产相关的量并计算出了相应的数值结果. 相似文献
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S. Croci C. Plossu B. Balland C. Dubois P. Boivin 《Journal of Materials Science: Materials in Electronics》2001,12(4-6):333-338
In this work we have studied the influence of N2O nitridation of thin EEPROM SiO2 tunnel oxides on Fowler–Nordheim tunnel injection potential barrier heights in WSi2-polysilicon gate MOS structures. In particular we have paid attention to the effect of the nitridation temperature by means of a comparison with standard (dry-wet-dry) oxides annealed in N2 at the same temperature. The temperatures considered were 900 °C, 950 °C and 1000 °C. It has been shown that the Si/SiO2 barrier is systematically smaller than the poly-Si/SiO2 one (~0.05 eV) in the whole set of samples and that the nitridation in N2O systematically decreases both the Si/SiO2 and the poly-Si/SiO2 barrier heights all the more as the nitridation temperature increases. The effects of neglecting the contribution of Si/SiO2 interface states and of the gate depletion phenomenon in the evaluation of the oxide electric field and, as a consequence, in the evaluation of the tunnel injection potential barrier heights have also been considered. It has been shown that neglecting the polysilicon gate depletion phenomenon leads to a strongly over-evaluated value of the Si/SiO2 barrier height while neglecting the interface states gives an error of approximately 1%. Moreover, we have shown that N2O nitridation increases the oxide dielectric constant all the more as the nitridation temperature increases while fluorine incorporation into the oxide induced by the WSi2 polycide deposition process decreases the same constant. 相似文献
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V. E. Unger Jr. 《IIE Transactions》1970,2(1):28-36
The capital budgeting problem for a firm deals with the allocation of limited amounts of capital among a specified set of investment opportunities. In this article, we assume the investment opportunities are indivisible in nature and that the firm desires to make this allocation in such a way as to maximize the discounted sum of dividends paid to its shareholders. From a mathematical programming standpoint, the problem may be classified as a mixed zero-one integer programming problem. Special solution techniques based on Benders's partitioning procedure and Balas's zero-one algorithm are developed for this problem. The solution algorithm may be extended to general mixed-integer programming problems. 相似文献
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Much attention has been paid to the quantitative risk analysis (QRA) research in recent years due to more and more severe disasters that have happened in the process industries. Owing to its calculation complexity, very few software, such as SAFETI, can really make the risk presentation meet the practice requirements. However, the traditional risk presentation method, like the individual risk contour in SAFETI, is mainly based on the consequence analysis results of dispersion modeling, which usually assumes that the vapor cloud disperses over a constant ground roughness on a flat terrain with no obstructions and concentration fluctuations, which is quite different from the real situations of a chemical process plant. All these models usually over-predict the hazardous regions in order to maintain their conservativeness, which also increases the uncertainty of the simulation results. On the other hand, a more rigorous model such as the computational fluid dynamics (CFD) model can resolve the previous limitations; however, it cannot resolve the complexity of risk calculations. In this research, a conceptual three-dimensional (3D) risk calculation method was proposed via the combination of results of a series of CFD simulations with some post-processing procedures to obtain the 3D individual risk iso-surfaces. It is believed that such technique will not only be limited to risk analysis at ground level, but also be extended into aerial, submarine, or space risk analyses in the near future. 相似文献
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《Materials Chemistry and Physics》1987,17(3):285-291
The process in which aluminium covered with a porous layer is re-anodized to obtain a compact layer is known as the pore-filling method. The purpose of this work was to study the relationship between anodizing conditions and the structure of the porous anodic film on aluminium by application of the pore-filling method.In a first series of experiments the influence of the anodization voltage on the porosity was examined. It was found that the inverse of the porosity is a function of the square root of the anodization voltage. The second part of our investigations consisted in studying the dependence of the thickness of the barrier layer on the anodization voltage. At each stage of the anodization process this barrier layer thickness is a function of the anodization voltage. Moreover, there is some evidence of a variation in the thickness of the barrier layer during an anodization process performed at a constant voltage. 相似文献
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Comparatively, less attention has been paid to the factors that obstruct consumers to use internet banking. Therefore, this study aims to analyze the barriers in the adoption of Internet banking in Karachi, Pakistan. A survey research questionnaire was adopted and, in total, 300 useable responses were used from the banks’ customers. First exploratory factor analysis (EFA) and confirmatory factor analysis (CFA) were applied for the establishment of measurement model and structural equation modeling (SEM) was used to find the significant influence barriers on Internet banking adoption. In the second phase, the neural network model was used to rank the relative influence of significant predictors obtained from SEM. The results indicate a significant positive relationship between value barrier, risk barrier, and image barrier with the usage of Internet banking. Only, the traditional barrier has a negative insignificant effect on the usage of Internet banking. The image barrier has a higher impact on usage of Internet banking followed by the value barrier and risk barrier. Results also indicate that males are facing high barriers in comparison with females. Findings provide guidelines to banks for developing facilities that enable the consumer to use Internet banking for their financial transactions. This study will be highly beneficial for the banking industry to improve their online services and revise their policies to facilitate consumers by meeting their needs. 相似文献
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Hideharu Shimizu Shuji Nagano Akira Uedono Nobuo Tajima Takeshi Momose Yukihiro Shimogaki 《Science and Technology of Advanced Materials》2013,14(5)
AbstractCap layers for Cu interconnects in ultra-large-scale integrated devices (ULSIs), with a low dielectric constant (k-value) and strong barrier properties against Cu and moisture diffusion, are required for the future further scaling of ULSIs. There is a trade-off, however, between reducing the k-value and maintaining strong barrier properties. Using quantum mechanical simulations and other theoretical computations, we have designed ideal dielectrics: SiCH films with Si–C2H4–Si networks. Such films were estimated to have low porosity and low k; thus they are the key to realizing a cap layer with a low k and strong barrier properties against diffusion. For fabricating these ideal SiCH films, we designed four novel precursors: isobutyl trimethylsilane, diisobutyl dimethylsilane, 1, 1-divinylsilacyclopentane and 5-silaspiro [4,4] noname, based on quantum chemical calculations, because such fabrication is difficult by controlling only the process conditions in plasma-enhanced chemical vapor deposition (PECVD) using conventional precursors. We demonstrated that SiCH films prepared using these newly designed precursors had large amounts of Si–C2H4–Si networks and strong barrier properties. The pore structure of these films was then analyzed by positron annihilation spectroscopy, revealing that these SiCH films actually had low porosity, as we designed. These results validate our material and precursor design concepts for developing a PECVD process capable of fabricating a low-k cap layer. 相似文献
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There has been significant work investigating the use of molecules as nanoscale rectifiers in so-called "molecular electronics". However, less attention has been paid to optimizing the design parameters of molecular rectifiers or to their inherent limitations. Here we use a barrier tunneling model to examine the degree of rectification that can be achieved and to provide insight for the design and development of molecules with optimum rectification responses. 相似文献