Analytical Model of Amorphous Layer Thickness Formed by High-Tilt-Angle As Ion Implantation

We previously proposed a compact model of amorphous layer thickness over a wide range of ion implantation conditions using a vertical ion implantation profile parameter database. We also proposed a new parameter for the through dose. We extended the model to any tilt angle for ion implantation using one more parameter for the lateral straggling of the ion implantation profile.     

高剂量Ge离子注入直接形成nc-Ge的研究

报道了分别采用剂量为1×1016,1×1017,5×1017和1×1018cm-2的高剂量Ge离子注入,不需退火即可在SiO2中直接形成Ge纳米晶的新现象.采用掠入射X射线衍射和激光喇曼谱等实验手段对样品进行了物相分析.结果表明,高剂量Ge离子注入可在SiO2薄膜中直接形成Ge纳米晶(nc-Ge);非晶态Ge向晶态Ge发生相变的阈值剂量约为1×1017cm-2,离子注入直接形成的nc-Ge内部具有较大压应力,随着注入剂量的提高,nc-Ge的尺寸和含量均有提高.对纳米晶形成机理的研究认为,在Ge离子注入剂量达到阈值,此时膜中Ge非晶态团簇浓度达到饱和甚至过饱和,新入射的Ge离子把动能传递给膜中的非晶态Ge原子,使其部分析出并团聚形成能量最低且最稳定的Ge纳米晶态.     

高剂量Ge离子注入直接形成nc-Ge的研究

报道了分别采用剂量为1e1 6 ,1e1 7,5e 1 7和1e1 8cm- 2的高剂量Ge离子注入,不需退火即可在Si O2中直接形成Ge纳米晶的新现象.采用掠入射X射线衍射和激光喇曼谱等实验手段对样品进行了物相分析.结果表明,高剂量Ge离子注入可在SiO2 薄膜中直接形成Ge纳米晶(nc- Ge) ;非晶态Ge向晶态Ge发生相变的阈值剂量约为1e1 7cm- 2 ,离子注入直接形成的nc- Ge内部具有较大压应力,随着注入剂量的提高,nc- Ge的尺寸和含量均有提高.对纳米晶形成机理的研究认为,在Ge离子注入剂量达到阈值,此时膜中Ge非晶态团簇浓度达到饱和甚至过饱和,新入射的     

MeV He+离子注入氧化锌晶体光波导特性研究

用能量为2.0 MeV剂量为2×1016 ion/cm2 He+离子室温下注入到z切的氧化锌晶体中形成光波导.退火前后用棱镜耦合法在633 nm激光波长下测量波导的暗模特性,发现在空气中经过适当退火后暗模消失,说明晶格损伤减少,进一步的退火处理有可能使晶格损伤完全恢复.用TRIM ′2003程序模拟了2.0 MeV He+离子注入到氧化锌晶体的过程,得到氧化锌损伤分布与穿透深度的关系曲线,并利用反射计算法重构了离子注入波导的折射率分布, 发现在波导区折射率增加,在离子射程的末端有一个折射率降低的光学位垒,结果还显示折射率分布曲线与损伤分布曲线非常相似,这充分说明核碰撞所造成的晶格损伤是形成光波导的主要原因.     

CH4+Ar混合等离子体注入新工艺

采用CH4 Ar混合等离子体对p-Si(100)进行剂量为5.0×1017cm-2,能量分别为40keV及80keV的碳离子注入,靶温控制在700°C左右;注入后将样品在1250°C的氩气中退火5h。通过红外反射光谱、掠角X-射线衍射以及剖面透射电镜对退火前后的样品进行分析,其结果证明了结晶质量较好的多晶β-SiC不连续埋层的形成。     

全离子注入薄基区硅晶体管的研究

针对数字电路的开发和应用,设计了一种薄基区晶体管,其横向结构采用单侧基极引出.采用全离子注入,实现了基区宽度为80～100 nm的npn纵向结构.基极用电压输入,Vbe在1.2 V附近时,跨导峰值gmac(△Ic/△Vbe)=0.4 mS,βac(△Ic/△Ib)=2.5.当Vbe从0.5 V变到1.2 V时,gmac/gm比βac/β大得多.跨导比电流增益更能准确地描述器件特性.这种器件更倾向于电压控制型器件,用输入电压的变化可以很方便地控制器件开关状态的转换,特别适合于数字电路的开发和应用.采用研制的器件连接了双稳态电路,在电压脉冲的控制下实现了双稳态的翻转.     

离子注入方法形成电流限制孔径及其对器件光电特性的影响

采用离子注入方法和后续的退火工艺制作了1.3μm面发射电致发光(EL)器件结构的电流限制孔径,通过对此结构的电学和光学特性进行测试分析,获得了离子注入和退火温度的优化参数,工艺参数为离子注人剂量5×1014cm-2和450℃退火1min.结果显示随着电流限制孔径的缩小,器件的电阻呈线性增大;电流限制孔径的形成显著增强1.3μm面发射器件结构的电致发光强度,孔径为15μm的样品是没有限制孔径样品的4倍(注入电流3mA),并就电流限制孔对EL器件结构电致发光的影响进行了物理解释.     

On the Formation of Amorphous Ge Nanoclusters and Ge Nanocrystals in GeSixOy Films on Quartz Substrates by Furnace and Pulsed Laser Annealing

Semiconductors - Nonstoichiometric GeO0.5[SiO2]0.5 and GeO0.5[SiO]0.5 germanosilicate glassy films are produced by the high-vacuum coevaporation of GeO2 and either SiO or SiO2 powders with...     

离子注入方法形成电流限制孔径及其对器件光电特性的影响

采用离子注入方法和后续的退火工艺制作了1.3μm面发射电致发光(EL)器件结构的电流限制孔径,通过对此结构的电学和光学特性进行测试分析,获得了离子注入和退火温度的优化参数,工艺参数为离子注人剂量5×1014cm-2和450℃退火1min.结果显示随着电流限制孔径的缩小,器件的电阻呈线性增大;电流限制孔径的形成显著增强1.3μm面发射器件结构的电致发光强度,孔径为15μm的样品是没有限制孔径样品的4倍(注入电流3mA),并就电流限制孔对EL器件结构电致发光的影响进行了物理解释.     

Effect of Boron Impurity on the Light-Emitting Properties of Dislocation Structures Formed in Silicon by Si<Superscript>+</Superscript> Ion Implantation

The effect of boron implantation on the light-emitting properties of dislocation structures formed in silicon by Si⁺ ion implantation with subsequent annealing is studied. It is shown that the implantation of B⁺ ions has a significant effect on the dislocation-related luminescence intensity, spectrum and the temperature dependence of the D1-band intensity. It is found that the temperature dependence is nonmonotonous and involves two regions, in which the D1-band intensity increases with increasing temperature and has two well-pronounced maxima at 20 K and 60–70 K. The maximum at 20 K is associated with the morphological features of the dislocation structure under study, whereas the maximum at 60–70 K is associated with the additional implantation of the boron impurity into the dislocation region of the samples. It is established that the intensities of the experimentally observed maxima and the position of the high-temperature maximum depend on the implanted boron concentration.     

椭偏光谱及在离子注入硅损伤研究中的应用

介绍了椭圆偏振光谱（ＳＥ）的原理,给出了椭偏仪在离子注入半导体的辐照损伤研究中的应用和局限。研究表明,结合其它分析手段并建立精细的椭偏模型。椭圆偏振光７谱能定量测量各层结构的厚度、成分、气孔率和光学常数。     

衬底预非晶化对低能硼注入硅形成浅结的影响

本文研究了不同剂量,不同能量硅自注入预非晶化对低能硼注入硅形成浅结的影响。对于10keV硼注入情形,只要含硼表面层是充分预非晶化的,都可得到结深为0.15μm左右的浅结。     

大束流离子注入形成CoSi2/Si肖特基结电学特性

文中研究了使用大束流金属离子注入形成的CoSi2/Si肖特基结的特性。肖特基结由离子注入和快速热退火两步工艺形成。Co离子注入剂量为3×1017ion/cm2,注入电压25kV。快速热退火温度为850°C,时间为1min。应用I-V和C-V测量进行参数提取。I-V分析得到势垒高度约为0.64eV,理想因子为1.11,C-V分析得到势垒为0.72eV。最后依据实验结果对工艺提出了改进意见。     

Scanning Ion Probe Studies of Silicon Implantation Profiles in AlGaN/GaN HEMT Heterostructures

This paper reports results of scanning ion probe studies of silicon implantation profiles in source and drain regions of AlGaN/GaN high-electron-mobility transistor (HEMT) heterostructures. It is shown that both the undoped channel length and the transition region between implanted and non- implanted regions become wider with increasing depth in the structure. These results may explain the previously reported existence of resistance associated with the transition region between implanted and non-implanted semiconductor regions in AlGaN/GaN HEMT heterostructures with non-alloyed Si-implanted source and drain ohmic contact regions.     

大束流离子注入形成P-Si CoSi2/Si肖特基结的电学特性

采用金属离子注入法形式 Co Si2 /Si肖特基结并分析电学特性。分别测量不同退火条件下样品的 I-V、C-V特性 ,得出了各样品的势垒高度、串联电阻和理想因子。结果表明 ,采用快速热退火方法形成的结性能较好     

Normally Off n-Channel GaN MOSFETs on Si Substrates Using an SAG Technique and Ion Implantation

We have demonstrated n-channel gallium nitride (GaN) MOSFETs using a selective area growth (SAG) technique and ion implantation on a silicon substrate. Both MOSFETs realized good normally off operations. The MOSFET using the SAG technique showed a large drain current of 112 mA/mm, a lower leakage current, and a high field mobility of 113 cm²/V . s, which is, to our knowledge, the best for a GaN MOSFET on a silicon substrate.     

用于GaAs贯穿注入和包封退火的AIN薄膜

用直流反应溅射淀积的AIN薄膜作包封介质对GaAs进行了贯穿注入和包封退火。用电化学C－V法测量了载流子的分布。实验结果与TRIM模拟结果符合得很好。用50nm的AIN包封进行贯穿注入和退火，得到了较小的标准偏差，较陡峭的载流子分布和较高的激活率。应用AIN包封层后，当注入能量180keV，注入剂量7．5×10~13cm~－2时，所得到的最高载流子浓度为1．84×10~18cm~－3，样品方块电阻为118Ω／□。     

离子注入H13钢注入层微观结构的研究

本文利用ＴＥＭ研究了Ｓｉ，Ｔｉ离子注入Ｈ１３钢注入层微观结构。结果表明：Ｓｉ离子注入后，导致表面注入层微晶化及部分非晶化，内注入层多晶化；Ｔｉ离子注入后，表面注入层则完全非晶化，内注入层微晶化。     

Effect of Amount of Cu on the Intermetallic Layer Thickness Between Sn-Cu Solders and Cu Substrates

In the present study, Sn-Cu solders were synthesized using pure tin with varying weight percentage of nanosized copper particles (0 wt.%, 0.25 wt.%, 0.43 wt.%, 0.86 wt.%, and 1.35 wt.%) by a powder metallurgy route incorporating microwave-assisted sintering. Intermetallic compound (IMC) layer formation between Sn-Cu solders and Cu substrates was investigated following a reflow process. Isothermal aging studies were also conducted on selected Sn-Cu solders at 150°C for up to 4 weeks. Results revealed that the average IMC layer thickness decreases with the addition of nanocopper up to 0.43 wt.%. Beyond 0.43 wt.% Cu addition, the IMC layer thickness started to increase, and the maximum IMC layer thickness was found for Sn with 1.35 wt.% Cu addition. An attempt was made in this study to correlate the effect of nanocopper additions and aging time on the IMC layer thicknesses.     

硅-金刚石系统的离子束混合和欧姆接触

用离子束混合Si(700A)/C样品,在天然Ⅱb型金刚石上形成了梯度能带接触。选用Ge~+为注入离子,在能量120keV,剂量2.0×10~(16)cm~(-2),温度700℃下进行离子束混合。Rutherford背散射显示:有3—4％的Si与金刚石混合。红外吸收谱发现了Si—C键的形成,这表明形成了Si/SiC/C的梯度结构。Ⅰ—Ⅴ特性说明了离子束混合和高温热退火有助于欧姆接触的形成。而没有经过离子束混合的样品显示了Ⅰ—Ⅴ开路特性。