Preparation and characterization of phosphorus-doped silicon nanocrystals in SiCx films

Phosphorus (P)-doped silicon nanocrystals (Si-NCs) embedded in SiC matrix were prepared using magnetron sputtering and rapid thermal annealing with heavily P-doped Czochralski silicon as the doping target. The microstructure and electrical properties of the Si-NC thin films were characterized using transmission electron microscope, Raman spectroscopy and Hall measurement. It was observed that the microstructure changed from geometrically isolated Si-NCs to network Si-NCs with the annealing temperatures from 800 to 1200 °C. The evolution of microstructure led to the significant change of conductivity (10^?6 - 10¹ S cm^?1) in the Si_0.85C_0.15 thin films that possessing a fixed phosphorus concentration. A percolation threshold of crystalline-silicon (c-Si) content (30–40%) was found for the considerable increase of conductivity, where the carrier concentration dominated it. It suggested that the network Si-NCs not only increased the carrier mobility, but also boosted the carrier concentration. In addition, for the Si_0.85C_0.15 thin film with c-Si content above percolation threshold, the activate energy of conductivity could be lower than 70 meV and the work function lower than 4.10 eV.     

Investigations on phosphorus doped amorphous/nanocrystalline silicon films deposited by a filtered cathodic vacuum arc technique in the presence of hydrogen gas

Phosphorus doped amorphous/nanocrystalline silicon (a-Si:H/nc-Si:H) thin films have been deposited by a filtered cathodic vacuum arc (FCVA) technique in the presence of hydrogen gas at different substrate temperatures (T_s) ranging from room temperature (RT) to 350 °C. The films have been characterized by using X-ray diffraction (XRD), Raman spectroscopy, Fourier transform infrared (FTIR) spectroscopy, dark conductivity (σ_D), activation energy (ΔE), optical band gap (E_g) and secondary ion mass spectroscopy. The XRD patterns show that RT grown film is amorphous in nature but high temperature (225 and 350 °C) deposited films exhibit nanocrystalline structure with (111) and (220) crystal orientations. The crystallite size of higher temperature grown silicon film evaluated was between 13 and 25 nm. Raman spectra reveal the amorphous nature of the film deposited at RT, whereas higher temperature deposited films show crystalline nature. The crystalline volume fraction of the silicon film deposited at higher temperatures (225 and 350 °C) was estimated to be 58 and 72%. With the increase of T_s, the bonding configuration changes from mono-hydride to di-hydride as revealed by the FTIR spectra. The values of σ_D, ΔE and E_g of silicon films deposited at different T_s were found to be in the range of 5.37×10⁻⁴–1.04 Ω⁻¹ cm⁻¹, 0.05–0.45 eV and 1.42–1.83 eV, respectively. Photoconduction of 3.5% has also been observed in n-type nc-Si:H films with the response and recovery times of 9 and 12 s, respectively. A n-type nc-Si:H/p-type c-Si heterojunction diode was fabricated which showed the diode quality factor between 1.6 and 1.8.     

Effect of processing parameter on structural,optical and electrical properties of photovoltaic chalcogenide nanostructured RF magnetron sputtered thin absorbing films

The aim of this work was to develop high quality of CuIn_1−xGa_xSe₂ thin absorbing films with x (Ga/In+Ga)<0.3 by sputtering without selenization process. CuIn_0.8Ga_0.2Se₂ (CIGS) thin absorbing films were deposited on soda lime glass substrate by RF magnetron sputtering using single quaternary chalcogenide (CIGS) target. The effect of substrate temperature, sputtering power & working pressure on structural, morphological, optical and electrical properties of deposited films were studied. CIGS thin films were characterised by X-ray diffraction (XRD), Field emission scanning electron microscope (FE-SEM), Energy dispersive X-ray spectroscopy (EDAX), Atomic force microscopy (AFM), UV–vis–NIR spectroscopy and four probe methods. It was observed that microstructure, surface morphology, elemental composition, transmittance as well as conductivity of thin films were strongly dependent on deposition parameters. The optimum parameters for CIGS thin films were obtained at a power 100 W, pressure 5 mT and substrate temperature 500 °C. XRD revealed that thin film deposited at above said parameters was polycrystalline in nature with larger crystallite size (32 nm) and low dislocation density (0.97×10¹⁵ lines m⁻²). The deposited film also showed preferred orientation along (112) plane. The morphology of the film depicted by FE-SEM was compact and uniform without any micro cracks and pits. The deposited film exhibited good stoichiometry (Ga/In+Ga=0.19 and In/In+Ga=0.8) with desired Cu/In+Ga ratio (0.92), which is essential for high efficiency solar cells. Transmittance of deposited film was found to be very low (1.09%). The absorption coefficient of film was ~10⁵ cm⁻¹ for high energy photon. The band gap of CIGS thin film evaluated from transmission data was found to be 1.13 eV which is optimum for solar cell application. The electrical conductivity (7.87 Ω⁻¹ cm⁻¹) of deposited CIGS thin film at optimum parameters was also high enough for practical purpose.     

Effects of RTA temperatures on conductivity and micro-structures of boron-doped silicon nanocrystals in Si-rich oxide thin films

In this work, the B-doped Si rich oxide (SRO) thin films were deposited and then annealed using rapid thermal annealing (RTA) to form SiO₂-matrix silicon nanocrystals (Si NCs). The effects of the RTA temperatures on the structural properties, conduction mechanisms and electrical properties of B-doped SRO thin films (BSF) were investigated systematically using Hall measurements, Fourier transform infrared spectroscopy and Raman spectroscopy. Results showed that the crystalline fraction of annealed BSF increased from 41.3% to 62.8%, the conductivity was increased from 4.48×10⁻³ S/cm to 0.16 s/cm, the carrier concentration was increased from 8.74×10¹⁷ cm⁻³ to 4.9×10¹⁸ cm⁻³ and the carrier mobility was increased from 0.032 cm² V⁻¹ s⁻¹ to 0.2 cm² V⁻¹ s⁻¹ when the RTA temperatures increased from 1050 °C to 1150 °C. In addition, the fluctuation induced tunneling (FIT) theory was applicable to the conduction mechanisms of SiO₂-matrix boron-doped Si-NC thin films.     

High-performance C60 and picene thin film field-effect transistors with conducting polymer electrodes in bottom contact structure

C₆₀ and picene thin film field-effect transistors (FETs) in bottom contact structure have been fabricated with poly(3,4-ethylenedioxythiophene): poly(styrenesulfonate) (PEDOT:PSS) electrodes for a realization of mechanical flexible organic FETs. The C₆₀ thin film FETs showed n-channel enhancement-type characteristics with the field-effect mobility μ value of 0.41 cm² V^?1 s^?1, while the picene thin film FET showed p-channel enhancement-type characteristics with the μ of 0.61 cm² V^?1 s^?1. The μ values recorded for C₆₀ and picene thin film FETs are comparable to those for C₆₀ and picene thin film FETs with Au electrodes.     

Fabrication of CdSe sensitized SnO2 nanofiber quantum dot solar cells

In the present study, we report a cost-effective quantum dot solar cells based on a combination of electrospinning and successive-ionic-layer-adsorption and reaction (SILAR) methods. CdSe nanocrystals are deposited on electrospun SnO₂ nanofibers by SILAR method using CdCl₂ as the cadmium source and Na₂Se as selenium source. The as-prepared materials are characterized by spectroscopy and microscopy. CdSe deposited SnO₂ electrodes are also characterized by spectroscopy and microscopy. Cells are fabricated with platinum (Pt)-sputtered FTO glasses used as the counter electrodes and polysulfide solution used as the electrolyte. The efficiency of the cells is studied for different number of SILAR cycles. Current density–voltage (J–V) measurements on a cell having CdSe deposition of 7 SILAR cycles and SnO₂ coating area 0.25 cm² showed an overall power conversion efficiency of 0.29 % with a photocurrent density (J_SC) of 5.32 mA cm⁻² and open circuit voltage (V_OC) of 0.23 V under standard 1 Sun illumination of 100 mWcm⁻² (AM 1.5 G conditions). This is improved by carefully coating SnO₂ film without losing the structures. Also ZnS passivation layer is coated to obtain an improved efficiency of 0.48% with J_SC of 4.68 mAcm⁻², and V_OC of 0.43 V.     

Natural polyelectrolyte: Major ampullate spider silk for electrolyte organic field-effect transistors

The major ampullate (MA) silk collected from giant wood spiders Nephila pilipes consists of 12% glutamic acid (Glu) and 4% tyrosine (Tyr) acidic amino residues. The MA silk may act as a natural polyelectrolyte for organic field-effect transistors (OFETs). Pentacene and F₁₆CuPc OFETs were fabricated with the MA silk thin film as the gate dielectric. The MA silk thin film with surface roughness of 4 nm and surface energy of 36.1 mJ/m² was formed on glass using a hexafluoroisopropanol (HFIP) organic process. The MA silk gate dielectric in pentacene OFETs may improve the field-effect mobility (μ_FE,sat) value in the saturation regime from 0.11 in vacuum to 4.3 cm² V⁻¹ s⁻¹ in air ambient at ca. 70% RH. The corresponding threshold voltage (V_TH) value reduced from −6 V in vacuum to −0.5 V in air ambient. Similar to other polyelectrolytes, the changes of μ_FE,sat and V_TH may be explained by the generation of electric double layers (EDLs) in the MA silk thin film in air ambient due to water absorption.     

Structural and optical properties of Cu2FeSnS4 thin film synthesized via a simple chemical method

Cu₂FeSnS₄ thin film, with potential as an effective photovoltaic absorber, was prepared by sulfurizing a (Cu,Sn)S/FeS-structured precursor prepared via successive ionic layer absorption and reaction combined with chemical bath deposition. X-Ray diffraction, scanning electron microscopy, X-ray photoelectron spectroscopy, and UV-vis-NIR absorbance measurements showed that the Cu₂FeSnS₄ thin film exhibits large agglomeration of rod-shaped grains, a bandgap of E_g=1.22 eV, and a high optical absorption coefficient (>10⁴ cm⁻¹).     

Effect of cobalt substitution on the optical properties of bismuth ferrite thin films

Effect of cobalt substitution on the band gap and absorption coefficient of the BiFeO₃ thin films formed on quartz substrate by low cost spin coating method have been investigated. BiFe_1−xCo_xO₃ (x=0, 0.03, 0.06 and 0.10) thin films are polycrystalline and it retains the rhombohedral distorted perovskite structure up to 10 mole % of Co substitution. Smooth and compact surface morphology with uniform size particles are observed in SEM micrographs. Narrowing and broadening of band gap is observed as a function of Co content. Two strong emission peaks at ~2.51 eV and ~2.38 eV are recorded for all films with noticeable change in intensity. Results obtained from the optical absorption and photoluminescence spectroscopy experiments have shown that there exists an inverse correlation between the variation in the band gap and the concentration of oxygen vacancies. Band gap decreased by ~100 meV and absorption coefficient increased by 28% at the wavelength of 375 nm in 6 mole % Co substituted thin film and these observations are necessary requirements to improve the efficiency of photovoltaic devices.     

Control of the Ti diffusion in Pt/Ti bottom electrodes for the fabrication of PZT thin film transducers

For the achievement of microactuators based on piezoelectric thin films, a Pt/Ti/Si bottom electrode is widely used. This study presents the experimental results for Ti out-diffusion in Pt and Si for both sputtered Pt/Ti and Pt/TiO_x electrodes. These results have been compared before and after a rapid thermal annealing (RTA). The diffusion has been characterized by secondary ion mass spectroscopy (SIMS) analysis using Cs⁺ as a primary ion source. The Pt orientation has been observed by XRD measurements. Ti thin films (20 nm) have been sputtered in pure Ar whereas TiO_x films have been obtained by reactive sputtering in a mixture of Ar/O₂ (90/10). Finally, the Pt (100 nm) has been sputtered without vacuum breaking. After RTA (400°C, 30 s, in N₂), the Pt film exhibited a (1 1 1) orientation for both Ti and TiO_x adhesion films. The roughness of the Pt film measured by AFM with TiO_x underlayer was 80% less than that of the Pt/Ti bi-layer. The TiO_x film, as shown by SIMS analysis, has drastically reduced the diffusion of Ti in both Pt and Si. This phenomenon is accompanied by a very low Pt roughness. These results are analyzed in terms of diffusion and regrowth mechanisms inside the Pt film.     

Improvement of hydrogenated amorphous silicon germanium thin film solar cells by different p-type contact layer

In this study, we report an appreciably increased efficiency from 6% up to 9.1% of hydrogenated amorphous silicon germanium (a-SiGe:H) thin film solar cells by using a combination of different p-doped window layers, such as boron doped hydrogenated amorphous silicon (p-a-Si:H), amorphous silicon oxide (p-a-SiO_x:H), microcrystalline silicon (p-µc-Si:H), and microcrystalline silicon oxide (p-µc-SiO_x:H). Optoelectronic properties and the role of these p-layers in the enhancement of a-SiGe:H cell efficiency were also examined and discussed. An improvement of 1.62 mA/cm² in the short-circuit current density (J_sc) is attributed to the higher band gap of p-type silicon oxide layers. In addition, an increase in open-circuit voltage (V_oc) by 150 mV and fill factor (FF) by 6.93% is ascribed to significantly improved front TCO/p-layer interface contact.     

Effect of 100 MeV O7+ ion beam irradiation on radio frequency reactive magnetron sputtered ZnO thin films

Zinc oxide (ZnO) thin films were deposited on sapphire substrates at room temperature by radio frequency (RF) magnetron sputtering. These films were irradiated with 100 MeV O⁷⁺ ions of the fluencies 5×10¹³ ions/cm² at room temperature (RT) and at liquid nitrogen temperature (LNT). Profilometer studies showed that the roughness of pristine and LNT irradiated ZnO thin films were higher than that of the RT irradiated ZnO thin film. The glancing angle X-ray diffraction analysis reveals a reduced intensity and increased full width at half maximum (FWHM) of the (002) diffraction peak in the case of LNT irradiated film indicating disorder. However, the intensity and FWHM of the (002) diffraction peak in the case of RT irradiated ZnO thin films are comparable to those of the pristine film. UV–visible transmission spectra show that the percentage of transmission and band gap energy are different for RT and LNT irradiated films. While the pristine ZnO thin film exhibits two emissions—a broad emission at 403 nm and a sharp emission at 472 nm in its photoluminescence spectrum; the emission at 472 nm was absent for the irradiated films. The atomic concentrations of zinc and oxygen during the irradiation process were obtained using auger electron spectroscopy.     

Electric conduction of PbBr-based layered perovskite organic–inorganic superlattice having carbazole chromophore-linked ammonium molecule as an organic layer

We have successfully prepared thin films of PbBr-based layered perovskite having hole-transporting carbazole chromophore-linked ammonium molecules as an organic layer by a simple spin-coating from the N,N-dimethylformamide solution in which the stoichiometric amount of lead bromide and carbazole-linked ammonium bromides was dissolved. Their X-ray diffraction profiles exhibited that their layer structure formed (0 0 n)-orientation, where c-axis is perpendicular to the substrate plane. Their layer structure depended on the alkyl chain length of ammonium molecules. When methylene length of C₅H₁₀ was employed in the carbazole-linked ammonium molecules, highest orderliness of the layer structure was attained; higher-order X-ray diffraction peaks were observed in the layered perovskite films. In the layered pervskite film, in-plane conduction, namely conduction in the direction of the stacking of carbazole chromophore, was measured. For comparison, conductivity of poly(N-vinylcarbazole) (PVCBz) thin film was also measured. The conductivity of the layered perovskite thin film (1.8 × 10^?10 Scm^?1 at 303 K) was about three order of magnitude larger than that of the PVCBz thin film (5.3 × 10^?14 Scm^?1 at 303 K). Despite the much higher conductivity of the layered peroskite thin film, the activation energy of the conductivity of the layered perovskite thin film (1.44 eV) was about 2.4 times larger than that of the PVCBz thin film (0.61 eV). This phenomenon is probably due to difference in film morphology through considering the results of AFM observation.     

Fine tuning hole injection for high-performance polyfluorene-based blue emitting device by adjusting work function of anode via deposition of CFx layer with proper ionization potential on indium tin oxide

By introducing CF_x thin film as hole injection layer on top of indium tin oxide (ITO) anode via plasma polymerization of CHF₃, the device with poly(9,9-dioctylfluorene) (PFO) as emitting layer, ITO/CF_x(35 W)/PFO/CsF/Ca/Al, is prepared. At the optimal C/F atom ratio using the radio frequency power 35 W, the device performance is optimal having the maximum current efficiency 3.1 cd/A and maximum brightness 8400 cd/m². This is attributed to a better balance between hole and electron fluxes, resulting from a decrease in hole injection barrier as manifested by ultraviolet photoelectron spectroscopy and scanning surface potential microscopy.     

Electrical,optical and visible light-photocatalytic properties of monoclinic BiVO4 nanoparticles synthesized hydrothermally at different pH

Monoclinic BiVO₄ nanoparticles were synthesized hydrothermally at pH 0.5, 2.0, 5.0 and 7.0. They were characterized by high resolution scanning electron microscopy or field emission scanning electron microscopy, transmission electron microscopy, high resolution transmission electron microscopy, energy dispersive X-ray spectroscopy, selected area electron diffraction, powder X-ray diffraction, Raman spectroscopy, solid state impedance spectroscopy, UV–visible diffuse reflectance spectroscopy and photoluminescence spectroscopy. While BiVO₄ nanoparticles synthesized at pH 0.5 and 2.0 provide perfect semicircular Nyquist plots the nanocrystals prepared at pH 5 show a semicircular arc. The nanocrystals obtained at pH 7 exhibit a quasi-linear dependence of Z_Im on Z_Re. The absorption edge of BiVO₄ nanoparticles is red-shifted on decrease of the pH of synthesis; BiVO₄ synthesized at pH 0.5 is an exception. The synthesized nanoparticles show band gap emission at 483 nm and defect emissions at 534 and 578 nm. The band gap emission of BiVO₄ nanocrystals synthesized at pH 0.5 is much less than those of others. The photocatalytic activity of BiVO₄ nanoparticles decreases with increase of the pH of synthesis and nanocrystalline BiVO₄ synthesized at pH 0.5 is an exception. The photocatalytic activities of BiVO₄ nanoparticles synthesized at different pH are explained in terms of the charge transfer resistance, band gap energy, photoluminescence due to charge carrier recombination and preferential orientation of 040-plane in BiVO₄ nanocrystals synthesized at pH 2.     

Influence of Sn content on properties of ZnO:SnO2 thin films deposited by ultrasonic spray pyrolysis

The present work is devoted to the preparation of zinc oxide (ZnO): tin oxide (SnO₂) thin films by ultrasonic spray technique. A set of films are deposited using a solution formed with zinc acetate and tin chloride salts mixture with varied weight ratio R=[Sn/(Zn+Sn)]. The ratio R is varied from 0 to 100% in order to investigate the influence of Sn concentration on the physical properties of ZnO:SnO₂ films. The X rays diffraction (XRD) analysis indicated that films are composed of ZnO and SnO₂ distinct phases without any alloys or spinnel phase formations. The average grain size of crystallites varies with the ratio R from 17 to 20 nm for SnO₂ and from 24 to 40 nm for ZnO. The obtained films are highly transparent with a transmission coefficient equal to 80%. An increase in Sn concentration increases both the effective band gap energy from 3.2 to 4.01 eV and the photoluminescence intensity peak assigned defects to SnO₂. The films electrical characterization indicated that films are resistive. Their resistivities vary between 1.2×10² and 3.3×10⁴ (Ω cm). The higher resistivity is measured in film deposited with a ratio R equal to 50%.     

Spirobifluorene/sulfone hybrid: Highly efficient solution-processable material for UV–violet electrofluorescence,blue and green phosphorescent OLEDs

A high efficient UV–violet emission type material bis[4-(9,9′-spirobifluorene-2-yl)phenyl] sulfone (SF-DPSO) has been synthesized by incorporating electron deficient sulfone and morphologically stable spirobifluorene into one molecule. The steric and bulky compound SF-DPSO exhibits an excellent solid state photoluminescence quantum yield (Φ_PL = 92%), high glass transition temperature (T_g = 211 °C) and high triplet energy (E_T = 2.85 eV). In addition, the uniform amorphous thin film could be formed by spin-coating from its solution. These promising physical properties of the material made it suitable for using as UV–violet emitter in non-doped device and appropriate host in phosphorescent OLEDs. With SF-DPSO as an emitter, the non-doped solution processed device achieved an efficient UV–violet emission with the EL peak around 400 nm. By using SF-DPSO as a host, solution processed blue and green phosphorescent organic light emitting diodes showed a high luminous efficiency of 13.7 and 30.2 cd A⁻¹, respectively.     

Sol–gel synthesized Titania nanoparticles deposited on porous polycrystalline silicon: Improved carbon dioxide sensor properties

Titania nanoparticles (TNPs) were synthesized by a sol–gel method in our laboratory using titanium tetrachloride as the precursor and isopropanol as the solvent. The particles׳ size distribution histogram was determined using ImageJ software and the size of TNPs was obtained in the range of 7.5–10.5 nm. The nanoparticle with the average size of 8.5 nm was calculated using Scherrer׳s formula. Homogeneous and spherical nanoparticles were characterized by X-ray diffraction (XRD), atomic force microscopy (AFM), field emission scanning electron microscopy (FESEM) and UV–visible spectroscopy (UV–vis). The X-ray powder diffraction analysis showed that the prepared sample (TNPs) has pure anatase phase. TNPs were deposited on porous polycrystalline silicon (PPS) substrate by electron beam evaporation. The TNPs thickness was 23±2 nm at 10⁻⁵ mbar pressure at room temperature. Porosity was performed by an anodization method. Since polycrystalline silicon wafers consist of different grains with different orientations, the pore size distribution in porous layer is non-uniform [1]. Therefore, the average diameter of pores can be reported in PPS layer analysis. Average diameter of pores was estimated in the range of 5 μm which was characterized by FESEM. The nanostructured thin films devices (Al/Si/PPS/TNPs/Al and Al/Si/PPS/Al) were fabricated in the sandwich form by aluminum (Al) electrodes which were also deposited by electron beam evaporation. Electrical measurements (I–V curves) demonstrated the semiconducting behavior of thin film devices. The gas sensitivity was studied on exposure to 10% CO₂ gas. As a result, conductivity of devices increased on exposure to CO₂ gas. The device with TNPs thin film (Al/Si/PPS/TNPs/Al) was more sensitive and, had better response and reversibility in comparison with the device without TNPs thin film (Al/Si/PPS/Al).     

Potentiality of trap charge effects and SiON induced interface defects in a-Si3N4/SiON based MIS structure for resistive NVM device

Potential application of amorphous silicon nitride (a-Si₃N₄)/silicon oxy-nitride (SiON) film has been demonstrated as resistive non-volatile memory (NVM) device by studying the Al/Si₃N₄/SiON/p-Si metal–insulator–semiconductor (MIS) structure. The existence of several deep trap states was revealed by the photoluminescence characterizations. The bipolar resistive switching operation of this device was investigated by current–voltage measurements whereas the trap charge effect was studied in detail by hysteresis behavior of frequency dependent capacitance–voltage characteristics. A memory window of 4.6 V was found with the interface trap density being 6.4 × 10¹¹ cm⁻² eV⁻¹. Excellent charge retention characteristics have been observed for the said MIS structure enabling it to be used as a reliable non-volatile resistive memory device.     

Effect of zinc doping and temperature on the properties of sprayed CuInS2 thin films

Copper indium disulfide (CuInS₂) is an efficient absorber material for photovoltaic and solar cell applications. The structural, optical, photoluminescence properties and electrical conductivities could be controlled and modified by suitably doping CuInS₂ thin films with dopants such as Zn, Sn, Bi, Cd, Na, N, O, P and As. In this work Zn (0.01 M) doped CuInS₂ thin films are (Cu/In=1.25) deposited on to glass substrates in the temperature range 300–400 °C. It is observed that the film growth temperature, ion ratio (Cu/In=1.25) and Zn-doping affect structural, optical, photoluminescence and electrical properties of sprayed CuInS₂ thin films. As the XRD patterns depict, Zn-doping facilitates the growth of CuInS₂ thin films along (112) preferred plane and in other characteristic planes. The EDAX results confirm the presence of Cu, In, S and Zn in the films. The optical studies show, about 90% of light transmission occurs in the IR regions; hence Zn-doped CuInS₂ can be used as an IR transmitter. The absorption coefficient (α) in the UV–visible region is found to be in the order of 10⁴–10⁵ cm⁻¹ which is the optimum value for an efficient absorber. The optical band gap energies increase with increase of temperatures (1.66–1.78 eV). SEM photographs reveal crystalline and amorphous nature of the films at various temperature ranges. Photoluminescence study shows that well defined broad Blue and Green band emissions are exhibited by Zn-doped CuInS₂ thin films. All the films present low resistivity (ρ) values and exhibit semiconducting nature. An evolution of p-type to n-type conductivity is obtained in the temperature range 325–350 °C. Hence, Zn species can be used as a donor and acceptor impurity in CuInS₂ thin films to fabricate efficient solar cells, photovoltaic devices and good IR Transmitters.