Aging characteristics of ZnO–V2O5-based varistors for surge protection reliability

The effect of sintering temperature on clamping characteristics and pulse aging behavior of V₂O₅/MnO₂/Nb₂O₅ co-doped zinc oxide varistors was systematically investigated at 875–950 °C. Experimental results related to varistor effect showed that the breakdown field decreased dramatically from 6830 to 968 V/cm with the increase in the sintering temperature and the non-ohmic coefficient exhibited a maximum (49.5) at 900 °C in the sintering temperature. Varistors sintered at 900 °C exhibited the best clamp characteristics for the pulse current of 1–100 A, with the clamp voltage ratio of K = 1.86–2.77. Varistors sintered at 875 °C exhibited the strongest stability; variation rates for the breakdown field, for the non-ohmic coefficient, and for the leakage current density were −14.2%, −63.6%, and 59.0%, respectively, after application of a multi-pulse current of 100 A.     

Nb2O5掺杂对ZnO压敏电阻器电性能的影响

本文研究了Ｎｂ＿２Ｏ＿５掺杂以及Ｎｂ＿２Ｏ＿５与ＺｎＯ煅烧对ＺｎＯ压敏电阻器电性能的影响。实验表明，Ｎｂ＿２Ｏ＿５的掺入使压敏电场减少，当Ｎｂ＿２Ｏ＿５含量为０．１％ｍｏｌ时，其压敏电场最小．非线性系数最大。煅烧温度越高，压敏电场越高，非线性系数越大。     

Mn掺杂的SnO2·ZnO·Nb2O5压敏材料

研究了MnCO3掺杂对SnO2-ZnO-Nb2O5压敏材料压敏-介电性能的影响,研究中发现,掺入x(MnCO3)为0.08%的样品显示出最高的非线性系数(α=8.2),最高的势垒高度(φB=1.11eV),最高的击穿电场(E=466.67V/mm)。研究中同时发现,SnO2-ZnO-Nb2O5压敏材料的相对介电常数在573～673K间出现峰值,峰值随MnCO3掺入量的增加而增大,掺入x(MnCO3)为0.3%的样品在593K时,显示出最高的相对介电常数(εr=1.886×104)。     

内电极浆料对Bi2O3—ZnO—Nb2O5瓷料相组成的影响

研究了瓷料与内电极浆料的共烧工艺中，内电极浆料对Ｂｉ２ｏ３－ＺｎＯ－Ｎｂ２Ｏ５资瓷料相组成的影响。ＸＲＤ分析表明，Ｂｉ２Ｏ３－ＺｎＯ－Ｚｂ２Ｏ５瓷料是焦绿石立方α相与低对称β相构成的复相体系。     

Ta2O5及Nb2O5掺杂NdAlO3-CaTiO3陶瓷的介电性能研究

采用固相反应法制备0.3NdAlO3-0.7CaTiO3(CTNA)介质陶瓷。研究了Ta2O5及Nb2O5掺杂对所制CTNA陶瓷性能的影响。结果表明：Nb2O5和Ta2O5掺杂后,CTNA陶瓷的氧空位缺陷减少,显微结构改善,介电常数提高、介质损耗降低。同时加入质量分数w(Nb2O5)为0.1％,w(Ta2O5)为0.8...     

添加MnO2对ZnO-B2O3-P2O5-RnOm玻璃性能的影响

在ZnO-B<,2>O<,3>-P<,2>O<,5>-R<,n>O<,m>(R=Na、Al、Li)系玻璃中掺杂摩尔分数1%～5%的MnO<,2>,分析了MnO<,2>掺杂对玻璃的耐水性和流散性的影响,通过XRD分析了晶相的变化,通过摄像照片观察了玻璃试样受水侵蚀后表面形貌的变化.结果表明:当x(MnO<,2>)=3%时...     

MnO2掺杂对ZnO-B2O3-P2O5-RnOm玻璃性能的影响

在ZnO-B<,2>O<,3>-P<,2>O<,5>-R<,n>O<,m>玻璃中掺杂摩尔分数0～5%的MnO<,2>,分析了MnO<,2>掺杂对该玻璃线膨胀系数a1,密度ρ、电阻率R<,v>,的影响,通过DTA、红外、拉曼光谱和XRD分析了玻璃的结构.结果表明:x(MnO<,2>)>3%时,随着x(MnO<,2>)的增...     

Investigation of the Current–Voltage Characteristics of New MnO2/GaAs(100) and V2O5/GaAs(100) Heterostructures Subjected to Heat Treatment

Semiconductors - Complex oxide films with a thickness of about 200 nm are formed during the thermal oxidation of GaAs with magnetron-deposited V2O5 and MnO2 nanolayers. The electrical parameters of...     

MnCO3掺杂对SnO2·Ni2O3·Nb2O5压敏材料性的影响

研究并分析了Ni3+掺杂和Co2+掺杂对SnO2压敏电阻致密度和电学非线性性能的影响.研究了掺Mn2+对SnO2@Ni 2O3@Nb2O 5压敏材料性能的影响.发现x(MnCO3)为0 10%时,压敏电阻具有最高的视在电场(EB=686 89 V/mm)和最好的电学非线性性能(α=1 2 9).样品的收缩率和致密度变化趋势不一致,这是因为样品的致密度是由收缩率和MnCO3的挥发量两因素共同决定的.     

MnCO3掺杂对SnO2·Ni2O3·Nb2O5压敏材料性能的影响

研究并分析了Ni3+掺杂和Co2+掺杂对SnO2压敏电阻致密度和电学非线性性能的影响.研究了掺Mn2+对SnO2@Ni 2O3@Nb2O 5压敏材料性能的影响.发现x(MnCO3)为0 10%时,压敏电阻具有最高的视在电场(EB=686 89 V/mm)和最好的电学非线性性能(α=1 2 9).样品的收缩率和致密度变化趋势不一致,这是因为样品的致密度是由收缩率和MnCO3的挥发量两因素共同决定的.     

La2O3和Nb2O5掺杂对SrTiO3氧敏特性及半导化影响

研究Nb和La双施主掺杂对SrTiO₃陶瓷氧敏性能及半导化的影响,采用固相法合成了La、Nb复合掺杂的钛酸锶Sr_1-xLa_xTi_1-xNb_xO₃(x=0,0.001,0.01,0.03,0.05,0.1)钙钛矿复合系氧化物。研究不同的La,Nb掺杂量对氧敏材料灵敏度、电导率的影响,对合成氧敏元件在高温下的氧敏性能、电导性进行了测定。结果表明,双施主掺杂不仅可促进SrTiO₃陶瓷半导化,而且对氧敏元件灵敏度有重要影响,x=0.3 时呈现出理想的氧敏特性。     

Influence of Yb2O3 on the 1.53 μm spectroscopic properties in Er3+/Ce3+ co-doped TeO2-WO3-Na2O-Nb2O5 glasses

The Yb2O3 component was introduced into the Er3+/Ce3+ co-doped tellurite glasses with the composition of TeO2-WO3-Na2O-Nb2O5 to study the effect of Yb3+ on the 1.53 μm spectroscopic properties of Er3+. The X-ray diffraction (XRD) curve and Raman spectrum were measured to investigate the structure nature of synthesized tellurite glasses. The absorption spectrum, upconversion emission spectrum and fluorescence spectrum were measured to evaluate the improved effect of Yb3+ concentration on the 1.53 µm band fluorescence of Er3+. Results of the measured 1.53 µm band fluorescence intensity show a significant improvement with the increase of Yb3+ concentration, while the total quantum efficiency reveals a similar increasing trend. The results of the present work indicate that Er3+/Ce3+/Yb3+ tri-doped tellurite glass has good prospect as a promising gain medium applied for the 1.53 µm broadband amplifier.     

稀土Ce对SnO2·Co2O3·Nb2O5压敏性能的影响

研究了掺Ce对SnO2·Co2O3·Nb2O5压敏电阻器性能的影响。研究发现Ce4+对Sn4+的取代能明显提高陶瓷的致密度,掺入x(CeO2)为0.05的陶瓷样品具有最高的密度(ρ=6.71g/cm3),最高的视在势垒电场(EB=413.6V/mm),最高的非线性系数(α=13.8),最高的势垒电压和最窄的势垒厚度。为了解释样品电学非线性性质的起源,该文提出了SnO2·Co2O3·Nb2O5·CeO2晶界缺陷势垒模型。同时,对该压敏电阻器进行了等效电路分析。试验测量与等效电路分析结果相符。     

Bi2O3和V2O5复合掺杂BaTi4O9微波介质陶瓷

研究了多元掺杂对BaTi4O9微波介质陶瓷的烧结和介电性能的影响。通过单独添加烧结助剂Bi2O3和V2O5以及复合添加Bi2O3、V2O5来降低烧结温度,并且保持较好的微波介电性能。实验结果表明,当复合添加Bi2O3和V2O5各0.5%(质量分数)烧结温度为1160℃时,BaTi4O9微波介质陶瓷在2.5GHz下:εr为40.1,tgδ为6×10–4,τf为64×10–6℃–1,保持了良好的介电性能。     

Real-time measurements on a four stage RSFQ-counter with Nb–Al2O3–Nb Josephson junctions

RSFQ-toggle-flipflops with a SFQ-trigger circuit a Josephson transmission line at the input and a SFQ/dc-circuit at the output of each stage are implemented in the Nb–Al₂O₃–Nb Josephson junction technology on a single chip having coplanar wave guides at input and output. The counter is tested successfully at 4.2 K via coplanar/coaxial transitions using a bit pattern generator and a digital oscilloscope at room temperature up to f_I≈2 GHz pulse repetition frequency at the input. The highest test frequency f_I is limited by the available pattern generator.     

MnO2对Pb(Ni1/3 Nb2/3)O3基复相陶瓷介电性能的影响

研究了少量MnO2添加对Pb(Ni1/3Nb2/3)O3基复相陶瓷的介电常数温度特性和频率特性、介质损耗及电阻率的影响。结果表明,少量MnO2的加入,改善了复相陶瓷的介温特性和频率特性,降低了介电常数;同时降低了介质损耗,特别是低频高温下的介质损耗,提高了电阻率。对MnO2在复相陶瓷中所起的作用进行了分析。     

BaTiO3陶瓷中Nb2O5-Zn0.8Mg0.2TiO3的掺杂效应

研究了BaTiO3-Nb2O5-Zn0.8Mg0.2TiO3系统的介电性能及微观性能。SEM和XRD分析发现,在掺杂x(Nb)=1%的BaTiO3陶瓷中,Zn0.8Mg0.2TiO3的固溶度小于4%。Nb2O5和Zn0.8Mg0.2TiO3用量均为1%时,BaTiO3陶瓷为赝立方相结构,当x(Nb)>2%时,陶瓷样品(002)和(200)衍射峰相互分开,研究表明,BaTiO3陶瓷为四方相,且随着Nb用量增加,四方率增强。此外,Nb用量增加还使BaTiO3陶瓷室温介电常数降低,而同时居里点升高。当x(Nb)=2%和x(ZMT)=1%时,在空气中于1 180℃下烧成的BaTiO3陶瓷材料的主要性能指标为:298 K时介电常数2ε98 K=2 004,介电损耗tanδ=0.84%,密度ρ=1.4×1012Ω.cm,-55~ 150℃,电容量温度变化率△C/C≤±15%。     

玻璃万分及含量对ZnCr2O4—V2O5—Li2O—ZnO系湿敏电阻器性能的影响

在玻璃相ＬｉＺｎＶＯ４中加入一定的Ｂ２Ｏ３能够降低湿敏电阻器的本体电阻值。当ＬｉＺｎＶＯ４含量发迹时对湿敏电阻器的感湿灵敏度影响较大，玻璃相含量（摩尔分数）为１２％时感湿灵敏度最高。本文对上述结果给出了解释。