共查询到20条相似文献,搜索用时 15 毫秒
1.
用脉冲激光沉积法(PLD)在多孔硅(PS)衬底上生长ZnS薄膜,分别在300℃、400℃和500℃下真空退火。用X射线衍射(XRD)和扫描电子显微镜(SEM)研究了退火对ZnS薄膜的晶体结构和表面形貌的影响,并测量了ZnS/PS复合体系的光致发光(PL)谱和异质结的I-V特性曲线。研究表明,ZnS薄膜仅在28.5°附近存在着(111)方向的高度取向生长,由此判断薄膜是单晶立方结构的-βZnS。随着退火温度的升高,-βZnS的(111)衍射峰强度逐渐增大,且ZnS薄膜表面变得更加均匀致密,说明高温退火可以有效地促进晶粒的结合并改善结晶质量。ZnS/PS复合体系的PL谱中,随着退火温度升高,ZnS薄膜的自激活发光强度增大,而PS的发光强度减小,说明退火处理更有利于ZnS薄膜的发光。根据三基色叠加的原理,ZnS的蓝、绿光与PS的红光相叠加,ZnS/PS体系可以发射出较强的白光。但过高的退火温度会影响整个ZnS/PS体系的白光发射。ZnS/PS异质结的I-V特性曲线呈现出整流特性,且随着退火温度的升高其正向电流增加。 相似文献
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HU Zhaoshuo XUE Yuming DAI Hongli WANG Luoxin ZHANG Jiuchao WANG Jiangchao 《光电子快报》2023,19(7):410-415
The effects of different preheating and annealing temperatures on the surface morphology, microstructure, and optical properties of Cu2ZnSnS4 (CZTS) thin films are investigated by controlling the preheating and annealing temperatures. The prepared thin films were characterized using X-ray diffraction (XRD), Raman spectroscopy, scanning electron microscopy (SEM), and ultra-violet-visible (UV-Vis) spectroscopy techniques. XRD and Raman spectroscopy showed that a Kesterite structure with a selective orientation along the (112) peak was generated, and the thin films produced at a preheating temperature of 300 °C and annealing temperature of 570 °C had fewer secondary phases, which was beneficial for improving the performance of the solar cells. SEM confirms that the crystallite size increases and then decreases as the temperature increases, and the largest and most uniform crystallite size with the smoothest surface is generated at the above preheating and annealing temperatures. UV-Vis measurements show that the thin films generated at the above temperature have the lowest transmittance and the lowest optical band gap value of 1.46 eV, which is close to the optimal band gap value for solar cells and is suitable as an absorber layer material. 相似文献
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The annealing of heavily arsenic implanted (100) silicon using low temperature furnace techniques to obtain metastable concentrations of the dopant is described and the activations obtained are compared with those found after laser and electron beam annealing. 相似文献
5.
Mingxiang Wang Zhiguo Meng Man Wong 《Electron Devices, IEEE Transactions on》2000,47(11):2061-2067
Metal-induced laterally crystallized (MILC) polycrystalline silicon (poly-Si) with and without a post-crystallization high temperature anneal have been studied and compared. It was revealed using transmission electron microscopy (TEM) that the anneal resulted in significant improvement in the material quality. Consequently, the electrical properties of the annealed MILC poly-Si resistors were greatly enhanced, showing conduction behavior approaching that of single-crystal Si. Thin-film transistors realized on high-temperature annealed MILC poly-Si exhibited excellent device characteristics, thus making them potentially applicable to three-dimensional (3-D) device integration. Based on the TEM observations and a detailed consideration of the mechanism of grain growth during MILC, the effects of the anneal can be explained in terms of the evolution of the unique MILC grain structure during the high temperature treatment 相似文献
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系统研究了退火温度对硅薄膜结构和光学性能的影响。通过电子束蒸发工艺制备硅薄膜,然后在氮气保护下对薄膜样品在200~500°C范围内进行退火处理。使用XRD、拉曼光谱、电子自旋共振和透射光谱测量等方法对薄膜样品进行了表征。结果显示,随着退火温度的升高,非晶硅薄膜结构有序度在短程和中程范围内得到改善,同时缺陷密度显著降低-。当样品在400°C退火后,消光系数k由6.14×10-3下降到最小值1.02×10~3(1000 nm),这是由于此时硅薄膜缺陷密度也降到最低,约为沉积态薄膜的五分之一。试验结果表明,硅薄膜在适当的温度下退火可以有效地降低近红外区膜层的光学吸收,这对硅薄膜在光学薄膜器件研制中具有重要应用。 相似文献
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About 480 nm thick titanium oxide (TiO2) thin films have been deposited by electron beam evaporation followed by annealing in air at 300–600 °C with a step of 100 °C for a period of 2 h. Optical, electrical and structural properties are studied as a function of annealing temperature. All the films are crystalline (having tetragonal anatase structure) with small amount of amorphous phase. Crystallinity of the films improves with annealing at elevated temperatures. XRD and FESEM results suggest that the films are composed of nanoparticles of 25–35 nm. Raman analysis and optical measurements suggest quantum confinement effects since Raman peaks of the as-deposited films are blue-shifted as compared to those for bulk TiO2 Optical band gap energy of the as-deposited TiO2 film is 3.24 eV, which decreases to about 3.09 eV after annealing at 600 °C. Refractive index of the as-deposited TiO2 film is 2.26, which increases to about 2.32 after annealing at 600 °C. However the films annealed at 500 °C present peculiar behavior as their band gap increases to the highest value of 3.27 eV whereas refractive index, RMS roughness and dc-resistance illustrate a drop as compared to all other films. Illumination to sunlight decreases the dc-resistance of the as-deposited and annealed films as compared to dark measurements possibly due to charge carrier enhancement by photon absorption. 相似文献
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Xiao Hui Yang Fan Guang Zeng Xin Jian Li 《Materials Science in Semiconductor Processing》2013,16(1):10-14
Copper/silicon nanocomposite system (Cu/Si-NPA) is prepared by immersion plating Cu nanoparticles on silicon nanoporous pillar array (Si-NPA). The Cu/Si-NPA samples are heated under nitrogen for 2 h at elevated temperatures of 400 °C, 600 °C, and 800 °C. The morphological changes of Cu nanoparticles before and after heat treatments are characterized by SEM. The crystallinity and the average size of Cu nanoparticles before and after heat treatments are studied by XRD. The results show that two possible mechanisms, Ostwald ripening, and particle migration and coalescence, are believed to be responsible for the ripening of annealed Cu nanoparticles at different annealing temperatures. 相似文献
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The spectral characteristics of the refractive index and the extinction coefficient in the range 0.6–2.0 eV for amorphous
silicon films prepared by electron-beam evaporation with variation of the substrate temperature, deposition rate, and annealing
temperature in air are presented. The results obtained are discussed on the basis of the changes in the Penn gap energy as
a function of the indicated preparation and treatment conditions.
Fiz. Tekh. Poluprovodn. 32, 879–881 (July 1998) 相似文献
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Shallow-implanted antimony in silicon can be used in fabricating n-type silicon resistors with very low temperature coefficient of resistance (TCR), controllably and reproducibly. This paper reports a study of the sheet resistance of silicon resistors implanted with 121Sb at 10 keV, for various doses and annealing conditions. The methods used in fabricating samples and taking measurements were described in an earlier paper[1]. For high doses, ~ 1015 Sb/cm2, we found that two-stage annealing[2]—preannealing at 550°C followed by annealing at 1000°C—improves the electrical conductivity. For low doses, ~1012 Sb/cm2, the final annealing determines the conductivity. For medium doses, ~1013–1014 Sb/cm2, the interplay of damage-annealing and activation of Sb in Si introduces complications, giving a crossover of shet resistance vs implant dose for various annealing temperatures. For doses around 3 × 1013 cm?2, the resistances are very insensitive to the details of annealing sequence and temperature; also the TCR is very low, about 50 ppm/°C. The effect of annealing conditions for various doses, resistivities and TCR values are discussed. 相似文献
11.
S. W. Park Y. K. Baek J. Y. Lee C. O. Park H. B. Im 《Journal of Electronic Materials》1992,21(6):635-639
The formation of a SiO2 layer at the Ta2O5/Si interface is observed by annealing in dry O2 or N2 and the thickness of this layer increases with an increase in annealing temperature. Leakage current of thin (less than 40
nm thick) Ta2O5 films decreases as the annealing temperature increases when annealed in dry O2 or N2. The dielectric constant vs annealing temperature curve shows a maximum peak at 750 or 800° C resulting from the crystallization
of Ta2O5. The effect is larger in thicker Ta2O5 films. But the dielectric constant decreases when annealed at higher temperature due to the formation and growth of a SiO2 layer at the interface. The flat band voltage and gate voltage instability as a function of annealing temperature can be
explained in terms of the growth of interfacial SiO2. The electrical properties of Ta2O5 as a function of annealing conditions do not depend on the fabrication method of Ta2O5 but strongly depend on the thickness of Ta2O5 layer. 相似文献
12.
The refractive index and extinction coefficient in the range 0.6–2.0 eV of amorphous silicon films deposited by electron-beam
evaporation with variation of the substrate temperature, deposition rate, and anneal temperature in an air atmosphere are
presented. The results are discussed in terms of variation of the Penn energy gap as a function of the deposition and treatment
conditions.
Fiz. Tekh. Poluprovodn. 32, 1390–1392 (November 1998) 相似文献
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退火温度对ZnO掺杂ITO薄膜性能的影响 总被引:2,自引:2,他引:0
利用电子束蒸镀方法,在K8玻璃衬底上沉积ZnO掺杂ITO(ZnO-ITO)与ITO薄膜。研究不同退火温度对ZnO-ITO薄膜的微观结构的影响;对比分析了在不同退火温度条件下,ZnO-ITO和无掺杂ITO薄膜的光电性能。结果发现,ZnO-ITO薄膜具有较大的晶粒尺寸,随着退火温度的上升,晶体结构得到改善,表面粗糙度减小,薄膜的光电性能显著提高。ZnO-ITO薄膜经过500℃退火后得到最佳的综合性能,其表面均方根粗糙度(RMS)为32.52nm,电阻率为1.43×10-4Ω.cm;对442nm波长的光,透射率可达98.37%;与ITO薄膜相比,ZnO-ITO薄膜具有显著的抗PEDOT:PSS溶液腐蚀的能力。 相似文献
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B. V. Kamenev E. A. Konstantinova P. K. Kashkarov V. Yu. Timoshenko 《Semiconductors》2000,34(6):728-731
The methods of infrared spectroscopy, electron spin resonance, and photoluminescence were used to study the porous-silicon layers formed by electrochemical treatment of Si in an HF: D2O solution. In contrast with the samples prepared in a conventional electrolyte (HF: H2O), a steady increase in the photoluminescence intensity in the course of routine oxidation of the sample was observed, with the hydrogen coverage of the silicon-skeleton surface retained. A mechanism for anomalous oxidation of the layers of porous silicon obtained in a mixture of HF and heavy water is suggested. 相似文献
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《Materials Science in Semiconductor Processing》2012,15(4):371-379
Dye-sensitized solar cells (DSSCs) were fabricated from porous electrodes derived from sol–gel-synthesized (SGS) nanoparticles (NPs) of TiO2. Current–voltage measurements were performed to investigate performance characteristics of electrodes derived from SGS-NPs of TiO2 annealed at different temperatures. Experimental results indicate that the effects of bulk traps and surface states within TiO2 films on recombination of photo-injected electrons in DSSCs depend upon annealing temperature of SGS-TiO2 NPs. Moreover, electrodes fabricated from SGS-TiO2 showed higher photoelectric conversion efficiency than nonporous commercial (P25) TiO2 NPs. Porous structures within SGS-TiO2 NPs are of great benefit to sensitizer dye adsorption, and consequently to improvement of photo-electrochemical properties of DSSCs. 相似文献
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Tang Longjuan Zhu Yinfang Yang Jinling Li Yan Zhou Wei Xie Jing Liu Yunfei Yang Fuhua 《半导体学报》2009,30(9):096005-096005-4
tchants for SiO2 and SiNx:H. A high etching selectivity of SiO2 over SiNx:H was obtained using highly concentrated buffered HE 相似文献
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The influence of deposition, annealing conditions, and etchants on the wet etch rate of plasma enhanced chemical vapor deposition (PECVD) silicon nitride thin film is studied. The deposition source gas flow rate and annealing temperature were varied to decrease the etch rate of SiNx:H by HF solution. A low etch rate was achieved by increasing the SiH4 gas flow rate or annealing temperature, or decreasing the NH3 and N2 gas flow rate. Concentrated, buffered, and dilute hydrofluoric acid were utilized as etchants for Sit2 and SiNx:H. A high etching selectivity of Sit2 over SiNx:H was obtained using highly concentrated buffered HE 相似文献
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