A multi-color CdS/ZnSe quantum well photodetector for mid- and long-wavelength infrared detection

In this paper, we report on the design and characterization of a quantum well based infrared photodetectors covering simultaneously infrared radiation within mid- and long-infrared spectral regions. The proposed infrared photodetectors rely on intersubband transitions in asymmetric ZnSe/CdS double quantum wells. The three-energy-level and the wavelengths of the intersubband transitions in the asymmetric double quantum wells are obtained by solving the Schrödinger and Poisson equations self consistently, the influence of the right well width on the absorption coefficient is studied. The peak positions of intersubband absorption coefficients in the structure are found at 3.31, 4.4 and 13.5 µm for a 1 nm right well width while the absorption peak positions are located at 3.33, 6.43 and 6.95 µm for a 1.4 nm right well thickness. Then, the electro-optic performances of the infrared photodetector are evaluated; the dark current dependence with the applied voltage and temperature is discussed. This work demonstrates the possibility of detection of widely separated wavelength bands using intersubband transitions in quantum wells with a low dark current.     

InGaAsP/InP Double Quantum Well Intermixing Induced by Phosphorus Ion Implantation

A quantum well intermixing(QWI) investigation on double quantum well(DQW) structure with two different emitting wavelength caused by phosphorus ion implantation and following rapid thermal annealing (RTA) was carried out by means of photoluminescence(PL). The ion implantation was performed at the energy of 120 kev with the dose ranging from 1 × 1011 cm-2 to 1× 1014 cm-2. The RTA was performed at the temperature of 700 ℃ for 30 s under pure nitrogen protection. The PL measurement implied that the band gap blue-shift from the upper well increases with the ion dose faster than that from lower well and the PL peaks from both QWs remained well separated under the lower dose implantation(～1×1011 cm-2 ) indicating that the implant vacancy distribution affects the QWI. When the ion dose is over ～ 1 × 1012 cm-2 , the band gap blue-shift from both wells increases with the ion dose and finally the two peaks merge together as one peak indicating the ion implantation caused a total intermixing of both quantum wells.     

Strained InGaAsP multi-quantum-well structures for InP-based wide linewidth and polarization-insensitive semiconductor optical amplifiers

We have calculated the band structure of 1.55 μm InGaAsP/InGaAsP multi-quantum-well structures using Lüttinger–Kohn Hamiltonian taking into account the strain in the quantum wells (QWs) and barriers, and the confinement in the quantum wells. Using the calculated dispersion curves and oscillator strength between the different interband transitions, we have determined the optical gain in TE and TM mode and the spontaneous amplified emission as a function of injected carrier density in devices composed of quantum wells with different thicknesses. We find that an optical gain linewidth larger than 130 nm with a TE/TM polarization dependence lower than 1 dB can be obtained using a three-quantum-well In_0.53Ga_0.47As_0.96P_0.04/InGaAsP active layer with quantum well thicknesses of 10, 14 and 19 nm.     

InGaAsP量子阱混合技术理论及模拟研究

本文以品格中原子的扩散理论为基础，分析了四元系InGaAsP半导体材料中Ⅲ、Ⅴ族原子的扩散规律，建立了量子阱和超晶格结构中量子阱混合(QWI)的理论模型，模拟计算了半导体材料中组分浓度与扩散长度的关系，以及应变与扩散长度的关系，计算分析了应变对量子阱带隙、带结构和量子跃迁的影响，获得了一些有价值的结论，为量子阱混合试验和量子阱及超晶格集成器件的开发和研究提供了重要的理论基础。     

光子吸收诱导无序技术的光荧光谱研究

运用 1 0 6 4μm连续输出的Nd∶YAG激光器 ,对与InP晶格匹配的InGaAsP四元系量子阱材料进行了光子吸收诱导无序 (PAID)技术的研究。通过光荧光谱 (PL)的测量 ,证明有量子阱混合现象产生。衬底预加热和聚焦激光束结果表明 ,PAID中辐照时间与衬底温度、辐照的平均功率密度密切相关。聚焦激光照射后的荧光双峰表明PAID有一定的定域处理能力。     

Modeling of Ga1−xInxAs1−y−zNySbz/GaAs quantum well properties for near-infrared lasers

The aim of this work is to model the properties of GaInAsNSb/GaAs compressively strained structures. Indeed, Ga_1?xIn_xAs_1?y?zN_ySb_z has been found to be a potentially superior material to GaInAsN for long wavelength laser dedicated to optical fiber communications. Furthermore, this material can be grown on GaAs substrate while having a bandgap smaller than that of GaInNAs. The influence of nitrogen and antimony on the bandgap and the transition energy is explored. Also, the effect of these two elements on the optical gain and threshold current density is investigated. For example, a structure composed of one 7.5 nm thick quantum well of material with In=30%, N=3.5%, Sb=1% composition exhibits a threshold current density of 339.8 A/cm² and an emission wavelength of 1.5365 μm (at T=300 K). It can be shown that increasing the concentration of indium to 35% with a concentration of nitrogen and antimony, of 2.5% and 1%, respectively, results in a decrease of the threshold current density down to 253.7 A/cm² for a two well structure. Same structure incorporating five wells shows a threshold current density as low as 221.4 A/cm² for T=300 K, which agrees well with the reported experimental results.     

GaN-based HEMTs tested under high temperature storage test

In this work, the impact of 1000 h thermal storage test at 325 °C on the performance of gallium nitride high electron mobility transistors grown on Si substrates (GaN-on-Si HEMTs) is investigated. The extensive DC- and pulse-characterization performed before, during and after the stress did not reveal degradation on the channel conduction properties as well as formation of additional trapping states. The failure investigation has shown that only the gate and drain leakage currents were strongly affected by the high temperature storage test. The physical failure analysis revealed a Au inter-diffusion phenomenon with Ni at the gate level, resulting in a worsening of the gate–AlGaN interface. It is speculated that this phenomenon is at the origin of the gate and drain leakage current increasing.     

Preparation and structure of ultra-thin GaN (0001) layers on In0.11Ga0.89N-single quantum wells

Multiple surface reconstructions have been observed on ultra-thin GaN (0001) layers of 1–10 nm thickness, covering a 3 nm thick In_0.11Ga_0.89N single quantum well in a GaN matrix. Low energy electron diffraction patterns show (2×2) and (√3×√3)-R30° symmetries for samples annealed in nitrogen plasma, and (2×2), (3×3), (4×4), and (6×6) symmetries for samples overgrown with an additional monolayer-thin GaN film by molecular beam epitaxy under Ga-rich growth conditions. Photoelectron spectroscopy shows that the InGaN quantum wells and capping layers are stable for growth temperatures up to 760 °C, and do not show formation of indium or gallium droplets on the surface. The photoluminescence emission from the buried InGaN SQWs remains unchanged by the preparation process, demonstrating that the SQWs do not undergo any significant modification.     

多变量离子注入型量子阱混杂效应

为实现InP基单片集成光电子器件和系统,对InGaAsP/InGaAsP分别限制异质结多量子阱激光器结构展开量子阱混杂(QWI)技术研究。在不同能量P离子注入、不同快速热退火(RTA)条件以及循环退火下,研究了有源区量子阱混杂技术,实验结果采用光致发光(PL)谱进行表征。实验结果表明:在不同变量下皆可获得量子阱混杂效果,其中退火温度影响最为显著,且循环退火可进一步提高量子阱混杂效果;PL谱蓝移随着退火温度、退火时间和注入能量的增大而增大,退火温度对蓝移的影响最大,在注入剂量为1×10^14 ion/cm2,注入能量为600keV,750℃二次退火150s时获得最大蓝移量116nm。研究结果为未来基于QWI技术设计和制备单片集成光电子器件和系统奠定了基础。     

使用SiO2介质膜实现InGaAsP量子阱混杂

报道了使用SiO2介质膜导致的无杂质空位扩散实现InGaAsP多量子阱混杂的实验,得到200nm的最大带隙波长蓝移.另外,采用量子阱混杂制作了蓝移的FP腔激光器,其性能与未混杂的激光器相当.     

使用SiO_2介质膜实现InGaAsP量子阱混杂

报道了使用SiO2 介质膜导致的无杂质空位扩散实现InGaAsP多量子阱混杂的实验,得到2 0 0nm的最大带隙波长蓝移.另外,采用量子阱混杂制作了蓝移的FP腔激光器,其性能与未混杂的激光器相当     

Reconfigurable 1×4 InP-based optical switch

An integrated 1×4 InP-based optical switch is reported. The device is quite simple and full device operation is achieved by injecting electrical currents to two electrodes. Since the operation of the switch relies on current spreading, using the carrier-induced refractive index change in InGaAsP multiple quantum wells, an area-selective zinc in-diffusion process is used to regulate the current spreading and optimize device performance. As a result, the fabricated 1×4 switch exhibits a ?14 dB crosstalk between channels over a wavelength range of 30 nm, while maintaining low electrical power consumption and allowing the switch to be operated uncooled and under d.c. current conditions.     

Low frequency noise spectroscopy in InAs/GaAs resonant tunneling quantum dot infrared photodetectors

We have studied the temperature dependence of low-frequency noise in InAs–GaAs resonant tunneling quantum dot infrared photodetectors (T-QDIPs). The noise in these devices has been investigated in the temperature range of 78–300 K. The noise spectrum showed a weak Lorentzian component superimposed upon the 1/f^γ spectrum. The change in the cut-off frequency of the Lorentzian was analyzed as a function of temperature. The activation energy of the trap associated with this Lorentzian was obtained as 0.155 eV, which is in good agreement with the energy of the lowest energy state in the quantum dot.     

Temperature dependent lasing characteristics of InAs/InP(100) quantum dot laser

We report on the lasing characteristics of InAs/InP(100) quantum dots laser through changing the temperature under continuous-wave mode. Three lasing peaks are simultaneously observed at temperature of 80 K and the lasing order of each peak is unrelated with each other when injection current increases. Laser spectra obtained under fixed current for different temperatures show a drastic influence on their shape. A large spectral broadening is observed at low temperature, while the width of lasing spectra gradually narrows when the operating temperature increased. The lasing process of quantum dot laser is obviously different from that of a reference quantum well laser in the same wavelength region. In addition, very high wavelength stability of 0.088 nm/K in the temperature range of 80–300 K is obtained, which is 6.2 times better than that of reference quantum well laser.     

Effect of cobalt substitution on the optical properties of bismuth ferrite thin films

Effect of cobalt substitution on the band gap and absorption coefficient of the BiFeO₃ thin films formed on quartz substrate by low cost spin coating method have been investigated. BiFe_1−xCo_xO₃ (x=0, 0.03, 0.06 and 0.10) thin films are polycrystalline and it retains the rhombohedral distorted perovskite structure up to 10 mole % of Co substitution. Smooth and compact surface morphology with uniform size particles are observed in SEM micrographs. Narrowing and broadening of band gap is observed as a function of Co content. Two strong emission peaks at ~2.51 eV and ~2.38 eV are recorded for all films with noticeable change in intensity. Results obtained from the optical absorption and photoluminescence spectroscopy experiments have shown that there exists an inverse correlation between the variation in the band gap and the concentration of oxygen vacancies. Band gap decreased by ~100 meV and absorption coefficient increased by 28% at the wavelength of 375 nm in 6 mole % Co substituted thin film and these observations are necessary requirements to improve the efficiency of photovoltaic devices.     

Cu/SiO2逐层沉积增强无杂质空位诱导InGaAsP/InGaAsP量子阱混杂

研究了Cu/SiO_2逐层沉积增强的无杂质空位诱导InGaAsP/InGaAsP多量子阱混杂(QWI)行为。在多量子阱(MQW)外延片表面,采用等离子体增强的化学气相沉积(PECVD)不同厚度的SiO_2,然后溅射5 nm Cu,在不同温度下进行快速热退火(RTA)诱发量子阱混杂。通过光荧光(PL)谱表征样品在QWI前后的变化。实验结果表明,当RTA温度小于700℃时,PL谱峰值波长只有微移,且变化与其他参数关系不大;当RTA温度大于700℃时,PL谱峰值波长移动与介质层厚度和RTA时间都密切相关,当SiO_2厚度为200 nm,退火温度为750℃,时间为200 s时,可获得54.3 nm的最大波长蓝移。该种QWI方法能够诱导InGaAsP MQW带隙移动,QWI效果与InGaAsP MQW中原子互扩散激活能、互扩散原子密度以及在RTA过程中热应力有关。     

Concentration-insensitive and low-driving-voltage OLEDs with high efficiency and little efficiency roll-off using a bipolar phosphorescent emitter

A series of simplified trilayer phosphorescent organic light-emitting diodes (PHOLEDs) with high efficiency and little efficiency roll-off based on a bipolar iridium emitter Iridium(III) bis(2-phenylpyridinato)-N,N′-diisopropyl-diisopropyl-guanidinate (ppy)₂Ir(dipig) has been demonstrated. They are dominated by the efficient direct-exciton-formation mechanism and show gratifying concentration-insensitive and low-driving-voltage features. In particular, very high and stable electroluminescence (EL) efficiencies (maximum power efficiency and external quantum efficiency >98 lm W^?1 and 25% respectively, and external quantum efficiency >20% over a wide luminance range of 1–15,000 cd m^?2) are achieved in the PHOLEDs based on emitting layers (EMLs) consisting of (ppy)₂Ir(dipig) codeposited with common host CBP in an easily controlled doping concentration range (15–30 wt%). The EL performance of the PHOLEDs is comparable to the highest PHOLEDs reported in scientific literature.     

Use of a sulfur waste for biosynthesis of cadmium sulfide quantum dots with Fusarium oxysporum f. sp. lycopersici

After hydrodesulfurization of Mexican oil's sour acid gases, a sulfur toxic waste is recovered, we used it to synthesize cadmium sulfide quantum dots, which have been recently studied due to their optical (high photostability, high quantum yield and fluorescence) and catalytic properties. Increased demand of cadmium sulfide quantum dots has led to research of new synthesis methods that with higher yields, increased control over particle diameter, that produce hydrophilic quantum dots -as most of them are obtained in organic solvents- and that are environmentally friendly because most methods employ toxic materials or involve a high energy consumption. This study attempted to synthesize hydrophilic cadmium sulfide quantum dots using an environmentally friendly method with a fungus capable of transforming a dangerous waste into a high-value-added product. Mycelia of Fusarium oxysporum f. sp. lycopersici were incubated with 1 mM cadmium nitrate and 1% (w/v) sulfur waste at 30 °C for 24 h, then the biomass was separated through paper filtration. The filtrate became yellow indicating presence of extracellular cadmium sulfide quantum dots, as was confirmed by increased UV–vis absorption around 300 nm and fluorescence at 510 nm. The biomass of Fusarium oxysporum f. sp. lycopersici produced after 24 h, extracellular stable, hydrophilic and biocompatible cadmium sulfide quantum dots from a sulfur dangerous waste. Biosynthesized quantum dots were circular with diameter of 6.116±2.111 nm and had a wurtzite crystalline structure.     

Study of the growth and structural properties of InMnAs dots grown on high-index surfaces by MOVPE

The growth of InMnAs quantum dots by low pressure MOVPE technique on patterned (1 0 0) GaAs substrates was studied. The patterning in the form of ridges with sidewalls having (2 1 1) and (3 1 1) facets was prepared by wet chemical etching via a GaAs/AlAs sacrificial etching mask structure. AFM studies showed that the dots formation and distribution were very similar for both types of facets under study. InMnAs dot density on the (3 1 1) plane is about 5–7 times lower in comparison to that on the (1 0 0) planar substrate. The dots on sidewalls are larger in comparison to average dots formatted on planar GaAs (1 0 0) substrate. The lateral dimensions of these dots are in the interval 100–180 nm. In addition, dot distribution along the sidewall (from top to bottom) is not uniform. A higher dot concentration was observed close to the intersection of (3 1 1) facets with concave bottom part of the valleys between ridges. Finally, no dots were grown on the (1 0 0) plane created by self-faceting on the top of the triangular ridges. This is probably a consequence of the high quality of the (1 0 0) facet formed by lateral overgrowth.     

Formation of Cu6Sn5 phase by cold homogenization in nanocrystalline Cu–Sn bilayers at room temperature

Solid state reaction between nanocrystalline Cu and Sn films was investigated at room temperature by depth profiling with secondary neutral mass spectrometry and by X-ray diffraction. A rapid diffusion intermixing was observed leading to the formation of homogeneous Cu₆Sn₅ layer. There is no indication of the appearance of the Cu₃Sn phase. This offers a way for solid phase soldering at low temperatures, i.e. to produce homogeneous Cu₆Sn₅ intermediate layer of several tens of nanometers during reasonable time (in the order of hours or less). From the detailed analysis of the growth of the planar reaction layer, formed at the initial interface in Sn(100 nm)/Cu(50 nm) system, the value of the parabolic growth rate coefficient at room temperature is 2.3 × 10^− 15 cm²/s. In addition, the overall increase of the composition near to the substrate inside the Cu film was interpreted by grain boundary diffusion induced solid state reaction: the new phase formed along the grain boundaries and grew perpendicular to the boundary planes. From the initial slope of the composition versus time function, the interface velocity during this reaction was estimated to be about 0.5 nm/h.