Influence of Ti film thickness and oxidation temperature on TiO2 thin film formation via thermal oxidation of sputtered Ti film

Single-phase rutile TiO₂ films with good crystallinity were obtained by thermal oxidation of sputtered Ti films on Si and quartz substrates. The influence of the Ti film thickness on oxidation was systematically investigated. A temperature of 823 K was sufficient to fully oxidize Ti films of <0.2 μm in thickness, but 923 K was required for complete oxidation of thicker films. The crystal structure, phase, composition, and optical properties of the TiO₂ films were investigated using X-ray diffraction (XRD), Raman spectroscopy, energy-dispersive X-ray analysis (EDAX), and UV-vis-NIR spectroscopy. XRD and Raman analyses showed that the TiO₂ films are rutile phase. The bandgap of the TiO₂ films decreased with increasing thickness. A growth mechanism for TiO₂ thin films due to thermal oxidation of sputtered Ti films is proposed. Oxidation commences from the surface and proceeds inside the bulk and Ti→TiO₂ phase transformation occurs via different intermediate phases. We found that the oxidation temperature rather than the duration is the dominant factor in the growth of TiO₂ thin films.     

Effect of sputtering power on optical properties of prepared TiO2 thin films by thermal oxidation of sputtered Ti layers

In this research, TiO₂ thin films prepared via thermal oxidation of Ti layers were deposited by RF-magnetron sputtering method at three different sputtering powers. The effects of sputtering power on structure, surface and optical properties of TiO₂ thin films grown on glass substrate were studied by X-ray diffraction (XRD), atomic force microscopic (AFM) and UV–visible spectrophotometer. The results reveal that, the structure of layers is changed from amorphous to crystalline at anatase phase by thermal oxidation of deposited Ti layers and rutile phase is formed when sputtering power is increased. The optical parameters: absorption coefficient, dielectric constants, extinction coefficient, refractive index, optical conductivity and dissipation factor are decreased with increase in sputtering power, but increase in optical band gap is observed. The roughness of thin films surface is affected by changes in sputtering power which is obtained by AFM images.     

Bi3.25La0.75Ti3O12薄膜的化学溶液淀积方法制备及表征

采用新颖的化学溶液淀积方法,配制出可长时间稳定的先体溶液,采用红外分析和热分析等手段,对成膜过程中发生的反应变化进行了分析,结果表明采用新的方法可以增加先体的稳定性,并且确定了薄膜的析晶温度.XRD测试表明薄膜在不到500℃即开始析晶,并且析晶情况与Bi含量有关.对薄膜的电学性能研究表明随着Bi含量的增加,薄膜的漏电性能和抗疲劳特性变差,矫顽场变大,而2Pr在Bi过量10%的情况下达到最大31.6 μ C/cm2.     

TiO_2(Ag)纳米半导体薄膜的制备及其光催化性能

对热解Ｔｉ（ＯＣ４Ｈ９）４＋ＡｇＮＯ３溶胶制备的ＴｉＯ２（Ａｇ）纳米半导体薄膜光催化特性与其结构的关系进行了研究。薄膜对二卡基砜的光催化降解结果表明,热解温度显著影响薄膜的光催化作用,这与ＴｉＯ２微粒的长大和晶相转变有关;适量的Ａｇ作活性剂可以显著改善薄膜的光催化性能。     

Cu2ZnSnSe4 thin film solar cells produced by selenisation of magnetron sputtered precursors

Polycrystalline thin films of Cu₂ZnSnSe₄ (CZTSe) were produced by selenisation of Cu(Zn,Sn) magnetron sputtered metallic precursors for solar cell applications. The p‐type CZTSe absorber films were found to crystallize in the stannite structure (a = 5·684 Å and c = 11·353 Å) with an electronic bandgap of 0·9 eV. Solar cells with the indium tin oxide structure (ITO)/ZnO/CdS/CZTSe/Mo were fabricated with device efficiencies up to 3·2% measured under standard AM1·5 illumination. Copyright © 2009 John Wiley & Sons, Ltd.     

TiO2纳米棒的制备与结构表征

纳米TiO2是一种性能优异的半导体材料，对400～800nm范围内的可见光具有较强的反射能力，对紫外线的吸收能力也较强。所以，纳米TiO2在精细陶瓷、紫外线屏蔽材料、半导体材料、光催化材料等方面有着广泛的用途。制备TiO2纳米棒的方法很多，其中水热法制备出的粉体具有晶粒发育完整。     

低温制备柔性染料敏化太阳电池TiO2薄膜电极

采用丝网印刷技术在柔性基底ITO/PET上制备TiO2多孔薄膜,经过低温烧结得到TiO2多孔薄膜电极。以D102染料为敏化剂,KI/I2为电解质,Pt电极为对电极,制成电池后测试了电池的光电性能。结果表明:以乙醇作为分散剂添加到P25粉体中,采用丝网印刷技术制膜,100℃低温烧结可以在柔性基底ITO/PET上制备出表面粗糙度良好、具有一定光电性能的TiO2多孔薄膜电极,用其制作的太阳电池转换效率达1.33%。     

TiO2空心微球的制备及其表征

本文以钛酸正丁酯和阳离子交换树脂为原料制备了核-壳结构的TiO2/阳离子交换树脂复合微球,对复合微球进行热处理可除去阳离子交换树脂,从而得到表面多孔的TiO2空心微球。用光学显微镜、扫描电镜（SEM）、X-射线能量散射谱仪（EDS）、X-射线衍射仪（XRD）、氮吸附等手段对其进行了表征。结果表明,微球直径在300μm-500μm之间,BET比表面积为38．27m^2／g。微球表面TiO2纳米晶粒中锐钛矿相和金红石相比例分别为80％和20％,晶粒大小在30nm-50nm之间,微球表面Ti02晶粒的形貌主要有颗粒状,也有少量棒状结构。光催化实验结果表明：此种TiO2空心微球对罗丹明B溶液具有很好的光催化效果。     

Synthesis and characterization of TiO2-doped Polyaniline nanocomposites by chemical oxidation method

Polyaniline (PANI)/TiO₂ nanocomposite samples with various dopant percentages of TiO₂ were synthesized at room temperature using a chemical oxidative method. The samples were characterized by ultraviolet-visible spectrometer, Fourier transform infrared (FTIR) spectrometer, X-ray diffraction (XRD), scanning electron microscopy (SEM), EDAX and conductivity measurements. Incorporation of TiO₂ nanoparticles caused a slight red shift at 310 nm in the absorption spectra due to the interactions between the conjugated polymer chains and TiO₂ nanoparticles with π–π^? transition. FTIR confirmed the presence of TiO₂ in the molecular structure. In PANI/TiO₂ composites, two additional bands at 1623 cm^?1 and 1105 cm^?1 assigned to Ti–O and Ti–O^–C stretching modes were present. It can be concluded that Ti organic compounds are formed with an alignment structure of TiO₂ particles. XRD patterns revealed that, as the TiO₂ percentage was increased, the amorphous nature disappeared and the composites became more strongly oriented along the (1 1 0) direction, which showed the tetragonal structure of nanocrystalline TiO₂. SEM studies revealed the formation of uniform granular morphology with average grain size of 200 nm for (50%) PANI/TiO₂ nanocomposite samples.     

TiO2薄膜的相结构调控与表征

本文利用脉冲激光沉积技术在LaAlO3(001)衬底上生长了单晶锐钛矿和双相TiO2薄膜,并利用X射线衍射和透射电子显微术对薄膜的显微结构进行了系统表征.单晶锐钛矿薄膜在LaAlO3(001)衬底上实现了外延生长,双相TiO2薄膜以单晶锐钛矿TiO2为基体,在其中夹杂着金红石TiO2颗粒.TiO2薄膜的相结构可通过调整...     

用磁控溅射技术制备氮化铝薄膜

报道了用磁控溅射制备氮化铝薄膜的工艺过程和实验结果.给出了氮化铝薄膜的光学常数与氩气、氮气压强之间的关系.结果表明,氮化铝薄膜的光学性质,很大程度上取决于氮气和氩气之间的压强比.     

MgO/TiO2复合薄膜太阳能电池的性能

用sol-gel法和丝网印刷法制备多孔TiO2薄膜,溶液沉积法制备MgO/TiO2复合薄膜。研究了复合薄膜的表面形貌、断面结构、厚度等性能;组装电池,测定了电池的输出特性曲线。结果表明:MgO/TiO2复合薄膜表面平整,内部具有分布较为均匀的空隙,厚度约14μm;MgO薄膜的复合使染料敏化,敏化太阳能电池的开路电压从0.585V提高到0.659V,短路电流从2.057mA提高到2.348mA,从而使光电转换效率从2.24%提高到3.12%;并分析了MgO薄膜复合提高光电流响应的机理。     

单分散TiO_2空心微球的制备及表征

本文介绍一种简单可行的模板法用于制备单分散二氧化钛空心微球(HTS),采用聚苯乙烯(PSA)为模板球,在乙醇溶剂中钛酸四丁酯(TBOT)经水蒸汽催化水解形成二氧化钛/PSA复合微球,然后经高温煅烧得到HTS。经SEM分析,HTS具有优异的单分散性和表面形貌;经XRD分析,在500℃煅烧而成的HTS呈锐钛矿型;同时深入分析了TBOT掺量和反应时间关键因素的影响;HTS粒径大小可以通过调节PSA模板球粒径大小实现。此方法还可用于制备二氧化锆空心微球及其它无机空心微球。     

P-type ZnO thin films prepared by in situ oxidation of DC sputtered Zn3N2:Ga

The feasibility of a new fabrication route for N and Ga codoped p-type ZnO thin films on glass substrates, consisting of DC sputtering deposition of Zn3N2:Ga precursors followed by in situ oxidation in high purity oxygen, has been studied. The effects of oxidation temperature on the structural, optical and electrical properties of the samples were investigated by X-ray diffraction (XRD), scanning electron microscopy (SEM), optical transmittance and Hall effect measurements. The results were compared to a control film without Ga. XRD analyses revealed that the Zn3N2 films entirely transformed into ZnO films after annealing Zn3N2 films in oxygen over 500 ℃ for 2 h. Hall effect measurements confirmed p-type conduction in N and Ga codoped ZnO films with a low resistivity of 19.8 Ω?cm, a high hole concentration of 4.6E18 cm3 and a Hall mobility of 0.7 cm2/(V s). These results demonstrate a promising approach to fabricate low resistivity p-type ZnO with high hole concentration.     

P-type ZnO thin films prepared by in situ oxidation of DC sputtered Zn3N2:Ga

The feasibility of a new fabrication route for N and Ga codoped p-type ZnO thin films on glass substrates, consisting of DC sputtering deposition of Zn3N2:Ga precursors followed by in situ oxidation in high purity oxygen, has been studied. The effects of oxidation temperature on the structural, optical and electrical properties of the samples were investigated by X-ray diffraction (XRD), scanning electron microscopy (SEM), optical transmittance and Hall effect measurements. The results were compared to a control film without Ga. XRD analyses revealed that the Zn3N2 films entirely transformed into ZnO films after annealing Zn3N2 films in oxygen over 500 ℃ for 2 h. Hall effect measurements confirmed p-type conduction in N and Ga codoped ZnO films with a low resistivity of 19.8 Ω·cm, a high hole concentration of 4.6 × 1018 cm-3 and a Hall mobility of 0.7 cm2/(V·s). These results demonstrate a promising approach to fabricate low resistivity p-type ZnO with high hole concentration.     

CO2激光辐照下光学薄膜的温度场与热畸变

介绍了光学薄膜温度场的基本理论,利用交替隐型技术,对10.6μm激光辐照下介质薄膜的温度场分布进行了数值模拟和理论分析。在此基础上,利用夏克-哈特曼波前传感器对介质基底样品、不同厚度的介质单层膜样品以及不同膜系的YbF3/ZnSe介质多层膜样品在10.6μmCO2激光辐照下的热畸变进行了实验研究。研究结果表明,激光辐照下光学薄膜样品的温度场分布与辐照激光的光场分布、激光功率以及激光的辐照时间等因素有关。对于10.6μm激光而言,Ge最适宜做基底材料。     

Humidity sensing properties of spray deposited Fe doped TiO2 thin film

In the present work,ferrite (Fe) doped TiO2 thin films with different volume percentage (vol％) were synthesized us-ing a spray pyrolysis technique.The effect of Fe doping on structural properties such as crystallite size,texture coefficient,mi-crostrain,dislocation densities etc.were evaluated from the X ray diffratometry (XRD) data.XRD data revealed a polycrystalline anatase TiO2 phase for sample synthesized up to 2 vol％ and mixed anatase and rutile crystalline phase for sample synthesized at 4 vol％ Fe doped TiO2.The crystalline size was observed to decrease with increase in Fe dopant vol％ and also other structur-al parameters changes with Fe dopant percentage.In the present work,electrical resistance was observed to decrease with a rise in Fe dopant vol％ and temperature of the sample.Thermal properties like temperature coefficient of resistance and activa-tion energy also showed strong correlation with Fe dopant vol％.Humidity sensing properties of the synthesized sample altered with a change in Fe dopant vol％.In the present paper,maximum sensitivity of about 88.7％ for the sample synthes-ized with 2 vol％ Fe doped TiO2 and also the lowest response and recovery time of about 52 and 3 s were reported for the same sample.     

SnO_2-Sb薄膜材料的制备及气敏性能

利用等离子体化学气相沉积法制备了ＳｎＯ２－Ｓｂ导电薄膜，测试了ＳｎＯ２－Ｓｂ的气敏效应。结果表明，该薄膜对ＮＯ２气体有较好的气敏特性。当测试温度升高，其气敏响应时间相差无几，但恢复时间变短，同时气敏灵敏度相对提高，当温度达到２００℃以上时，灵敏度基本恒定。同时还可看出，不同阻值的薄膜其气敏灵敏度相差不大。     

TiO_2/SrTiO_3薄膜电极制备及其光电化学性能研究

采用商用P25TiO2为原料制备纳米多孔TiO2电极,用水热法在多孔TiO2表面包覆SrTiO3。采用X射线衍射仪、扫描电子显微镜及紫外-可见光谱仪对TiO2/SrTiO3薄膜电极进行表征。探讨了水热反应温度对TiO2/SrTiO3薄膜电极组装染料敏化太阳能电池(DSSC)的光电化学性能影响。结果表明:在纳米多孔TiO2电极表面生成了均匀的SrTiO3包覆层,且SrTiO3包覆的样品吸收边有红移;与TiO2薄膜电极相比,不同水热反应温度下制备的TiO2/SrTiO3薄膜电极组装DSSC的光电转换效率均有所提高,180℃时全光转换效率提高了24%。