Monolayer Graphene Coupled to a Flexible Plasmonic Nanograting for Ultrasensitive Strain Monitoring

Plasmonically coupled graphene structures have shown great promise for sensing applications. Their complex and cumbersome fabrication, however, has prohibited their widespread application and limited their use to rigid, planar surfaces. Here, a plasmonic sensor based on gold nanowire arrays on an elastomer with an added graphene monolayer is introduced. The stretchable plasmonic nanostructures not only significantly enhance the Raman signal from graphene, but can also be used by themselves as a sensor platform for 2D strain sensing. These nanowire arrays on an elastomer are fabricated by template‐stripping based nanotransfer printing, which enables a simple and fast production of stable nanogratings. The ultrasmooth surfaces of such transferred structures facilitate reliable large‐area transfers of graphene monolayers. The resulting coupled graphene‐nanograting construct exhibits ultrahigh sensitivity to applied strain, which can be detected by shifts in the plasmonic‐enhanced Raman spectrum. Furthermore, this sensor enables the detection of adsorbed molecules on nonplanar surfaces through graphene‐assisted surface enhanced Raman spectroscopy (SERS). The simple fabrication of the plasmonic nanowire array platform and the graphene‐coupled devices have the potential to trigger widespread SERS applications and open up new opportunities for high‐sensitivity strain sensing applications.     

Charge Transfer at Junctions of a Single Layer of Graphene and a Metallic Single Walled Carbon Nanotube

Junctions between a single walled carbon nanotube (SWNT) and a monolayer of graphene are fabricated and studied for the first time. A single layer graphene (SLG) sheet grown by chemical vapor deposition (CVD) is transferred onto a SiO₂/Si wafer with aligned CVD‐grown SWNTs. Raman spectroscopy is used to identify metallic‐SWNT/SLG junctions, and a method for spectroscopic deconvolution of the overlapping G peaks of the SWNT and the SLG is reported, making use of the polarization dependence of the SWNT. A comparison of the Raman peak positions and intensities of the individual SWNT and graphene to those of the SWNT‐graphene junction indicates an electron transfer of 1.12 × 10¹³ cm^?2 from the SWNT to the graphene. This direction of charge transfer is in agreement with the work functions of the SWNT and graphene. The compression of the SWNT by the graphene increases the broadening of the radial breathing mode (RBM) peak from 3.6 ± 0.3 to 4.6 ± 0.5 cm^?1 and of the G peak from 13 ± 1 to 18 ± 1 cm^?1, in reasonable agreement with molecular dynamics simulations. However, the RBM and G peak position shifts are primarily due to charge transfer with minimal contributions from strain. With this method, the ability to dope graphene with nanometer resolution is demonstrated.     

Controlled Electrodeposition of Gold on Graphene: Maximization of the Defect‐Enhanced Raman Scattering Response

A reliable method to prepare a surface‐enhanced Raman scattering (SERS) active substrate is developed herein, by electrodeposition of gold nanoparticles (Au NPs) on defect‐engineered, large area chemical vapour deposition graphene (GR). A plasma treatment strategy is used in order to engineer the structural defects on the basal plane of large area single‐layer graphene. This defect‐engineered Au functionalized GR, offers reproducible SERS signals over the large area GR surface. The Raman data, along with X‐ray photoelectron spectroscopy and analysis of the water contact angle are used to rationalize the functionalization of the graphene layer. It is found that Au NPs functionalization of the “defect‐engineered” graphene substrates permits detection of concentrations as low as 10^?16 m for the probe molecule Rhodamine B, which offers an outstanding molecular sensing ability. Interestingly, a Raman signal enhancement of up to ≈10⁸ is achieved. Moreover, it is observed that GR effectively quenches the fluorescence background from the Au NPs and molecules due to the strong resonance energy transfer between Au NPs and GR. The results presented offer significant direction for the design and fabrication of ultra‐sensitive SERS platforms, and also open up possibilities for novel applications of defect engineered graphene in biosensors, catalysis, and optoelectronic devices.     

Thermal AND Gate Using a Monolayer Graphene Nanoribbon

The first ever implementation of a thermal AND gate, which performs logic calculations with phonons, is presented using two identical thermal diodes composed of asymmetric graphene nanoribbons (GNRs). Employing molecular dynamics simulations, the characteristics of this AND gate are investigated and compared with those for an electrical AND gate. The thermal gate mechanism originates through thermal rectification due to asymmetric phonon boundary scattering in the two diodes, which is only effective at the nanoscale and at the temperatures much below the room temperature. Due to the high phonon velocity in graphene, the gate has a fast switching time of ≈100 ps.     

Fabrication of Carbon Nanoscrolls from Monolayer Graphene

A simple way of synthesizing carbon nanotube (CNT)/graphene (GN) nanoscroll core/shell nanostructures is demonstrated using molecular dynamics (MD) simulations. The simulations show that GN sheets can fully self‐scroll onto CNTs when the CNT radius is larger than a threshold of about 10 Å, forming a stable core/shell structure. Increasing the length of the GN sheet results in multilayered carbon nanoscroll (CNS) shells that exhibit a tubular structure similar to that of multiwall CNTs. The distances between the CNT and the GN wall or adjacent GN walls are about 3.4 Å. It is found that the van der Waals force plays an important role in the formation of the CNT/GN nanoscroll core/shell‐composite nanostructures. However, the chirality of the CNT and the GN sheet does not affect the self‐scrolling process, which thus provides a simple way of controlling the chirality and physical properties of the resulting core/shell structure. It is expected that this preparation method of CNT/GN nanoscroll core/shell composites will lead to further development of a broad new class of carbon/carbon core/shell composites with enhanced properties and even introduce new functionalities to composite materials.     

Single‐ and Double‐Sided Chemical Functionalization of Bilayer Graphene

An experimental study on the interaction between the top and bottom layer of a chemically functionalized graphene bilayer by mild oxygen plasma is reported. Structural, chemical, and electrical properties are monitored using Raman spectroscopy, transport measurements, conductive atomic force microscopy and X‐ray photoelectron spectroscopy. Single‐ and double‐sided chemical functionalization are found to give very different results: single‐sided modified bilayers show relatively high mobility (200–600 cm² V^?1 s^?1 at room temperature) and a stable structure with a limited amount of defects, even after long plasma treatment (>60 s). This is attributed to preferential modification and limited coverage of the top layer during plasma exposure, while the bottom layer remains almost unperturbed. This could eventually lead to decoupling between top and bottom layers. Double‐sided chemical functionalization leads to a structure containing a high concentration of defects, very similar to graphene oxide. This opens the possibility to use plasma treatment not only for etching and patterning of graphene, but also to make heterostructures (through single‐sided modification of bilayers) for sensors and transistors and new graphene‐derivatives materials (through double‐sided modification).     

温度对堆叠双层石墨烯层间耦合的影响

将不同层数堆叠和化学气相沉积法（CVD）生长的石墨烯在室温下进行拉曼光谱表征分析其层间耦合状态,并分析了不同温度下堆叠和CVD生长的双层石墨烯温度对其层间耦合的影响。研究结果表明:室温下CVD生长双层石墨烯和堆叠双层石墨烯的层间耦合状态截然不同;在25～250 ℃范围内,层间没有耦合作用或存在弱耦合作用的堆叠双层石墨烯的G峰峰位温度系数小于存在电子耦合的CVD生长双层石墨烯;超过250 ℃后,堆叠双层石墨烯G峰峰位温度系数变为正值,层与层之间可能产生了耦合,性质发生改变;在25～400 ℃ 范围内两种材料的2D峰半峰宽和G峰/2D峰强度比变化趋势几乎相同,但堆叠双层石墨烯波动大,对温度更敏感。     

Analytical Solutions for Bending Curved Beams with Different Moduli in Tension and Compression

When materials that exhibit different mechanical behaviors in tension and compression must be analyzed, Ambartsumyan's bimodular model for isotropic materials can be adopted. It deals with the principal stress state in a point, which is particularly important in the analysis and design of structures. In this article, an equivalent section method is used to transform the bimodular curved beam into a classical one with singular modulus; consequently, the simplified solution for bending stresses may be easily determined only by changing a few parameters relating to section characteristics. For the determination of the unknown neutral layer, a perturbation method is used to obtain the explicit expression. Based on the known neutral layer, a stress function method is used to obtain the elasticity solution for stresses and displacements via boundary conditions and continuity conditions. Based on the elasticity solution, an initial stresses problem in a bimodular multiply-connected body is considered. The comparison between two solutions shows that the simplified solution agrees very well with the elasticity one. Moreover, the inclusion of shear stress and the application of the equivalent section method in reinforced-concrete curved beams are also discussed. The results indicate that the bimodularity of materials has definite influences on the bending behavior of a bimodular curved beam.     

Gating of Single‐Layer Graphene with Single‐Stranded Deoxyribonucleic Acids

Patterning of biomolecules on graphene layers could provide new avenues to modulate their electrical properties for novel electronic devices. Single‐stranded deoxyribonucleic acids (ssDNAs) are found to act as negative‐potential gating agents that increase the hole density in single‐layer graphene. Current–voltage measurements of the hybrid ssDNA/graphene system indicate a shift in the Dirac point and “intrinsic” conductance after ssDNA is patterned. The effect of ssDNA is to increase the hole density in the graphene layer, which is calculated to be on the order of 1.8 × 10¹² cm^?2. This increased density is consistent with the Raman frequency shifts in the G‐peak and 2D band positions and the corresponding changes in the G‐peak full width at half maximum. Ab initio calculations using density functional theory rule out significant charge transfer or modification of the graphene band structure in the presence of ssDNA fragments.