Sol-gel processed high-k aluminum oxide dielectric films for fully solution-processed low-voltage thin-film transistors

High-k oxide dielectric films have attracted intense interest for thin-film transistors (TFTs). However, high-quality oxide dielectrics were traditionally prepared by vacuum routes. Here, amorphous high-k alumina (Al₂O₃) thin films were prepared by the simple sol-gel spin-coating and post-annealing process. The microstructure and dielectric properties of Al₂O₃ dielectric films were systematically investigated. All the Al₂O₃ thin films annealed at 300–600?°C are in amorphous state with ultrasmooth surface (RMS ~ 0.2?nm) and high transparency (above 95%) in the visible range. The leakage current of Al₂O₃ films gradually decreases with the increase of annealing temperature. Al₂O₃ thin films annealed at 600?°C showed the low leakage current density down to 3.9?×?10^?7 A/cm² at 3?MV/cm. With the increase of annealing temperature, the capacitance first decreases then increases to 101.1?nF/cm² (at 600?°C). The obtained k values of Al₂O₃ films are up to 8.2. The achieved dielectric properties of Al₂O₃ thin films are highly comparable with that by vapor and solution methods. Moreover, the fully solution-processed InZnO TFTs with Al₂O₃ dielectric layer exhibit high mobility of 7.23?cm² V^?1 s^?1 at the low operating voltage of 3?V, which is much superior to that on SiO₂ dielectrics with mobility of 1.22?cm²/V^?1 s^?1 at the operating voltage of 40?V. These results demonstrate that solution-processed Al₂O₃ thin films are promising for low-power and high-performance oxide devices.     

The effect of solvent water content on the dielectric properties of Al2O3 films grown by atmospheric pressure mist-CVD

Aluminum oxide (Al₂O₃) dielectric layers were grown by a mist-chemical vapor deposition (mist-CVD) process at 300 °C, using solvent mixtures containing acetone and water. As the acetone to water ratio was varied from 9:1 to 7:3, the leakage current of Al₂O₃ at an electric field of 7 MV/cm² decreased from 9.0 × 10^?7 to 4.4 × 10^?10 A/cm², and the dielectric constant increased from 6.03 to 6.85 with improved hysteresis during capacitance-voltage measurements. Consequently, the most robust Al₂O₃ films were obtained at an acetone to water ratio of 7:3, with a dielectric constant (κ) close to the ideal value 7.0, and a breakdown field of approximately 9 MV/cm. Thin film transistors (TFTs) incorporating In-Sn-Zn-O (ITZO) as the semiconductor were fabricated with the Al₂O₃ (7:3) dielectric onto p⁺⁺-Si substrates. The devices exhibit high electrical performance, with a high field effect mobility of 42.7 cm²V^?1s^?1, and a small subthreshold swing (S.S.) value of 0.44 V/decade.     

Rapid and facile low-temperature solution production of ZrO2 films as high-k dielectrics for flexible low-voltage thin-film transistors

A rapid lightwave (LW) irradiation method was presented for the low-temperature solution production of ZrO₂ films as high-k dielectrics for flexible high-performance thin-film transistors (TFTs). The LW irradiation process markedly decreased the required processing temperature and processing time. Microstructure characterizations confirmed the successful formation of ZrO₂ films with an ultrasmooth surface, large band gap (>5 eV) and low defect level. The ZrO₂ film produced via LW irradiation at ∼200 °C in only 8 min presented excellent dielectric properties, including a small leakage current of 3.3 × 10⁻⁸ A/cm² and a large capacitance of 296 nF/cm², significantly outperforming the films by the conventional high-temperature annealing process at 400 °C for 60 min. Furthermore, LW irradiation was extended to the channel layer. The rapid low-temperature solution-processed InZrO_x TFTs exhibited superior electrical characteristics, such as a high carrier mobility of 41.3 cm²V⁻¹s⁻¹ and a high on-off current ratio of 10⁵∼10⁶ at a low operation voltage of 3 V due to the employment of high-quality ZrO₂ dielectric films. Moreover, the flexible TFT on a polyimide (PI) plastic substrate achieved a high mobility of nearly 30 cm²V⁻¹s⁻¹, indicating that LW irradiation is highly promising for the rapid and low-temperature solution production of high-quality and flexible oxide electronic devices.     

Sol-gel derived low temperature HfO2-GPTMS hybrid gate dielectric for a-IGZO thin-film transistors (TFTs)

In this study, we prepared inorganic-organic HfO₂-GPTMS hybrid films by a simple sol-gel method at low temperature for high-k dielectric gate applications. The hybrid films were deposited by spin coating process, followed by annealing at 150?°C. The hybrid dielectric material was characterized by Spectroscopic ellipsometry (SE), AFM, FESEM, FTIR, TGA, and XPS techniques. The resulting hybrid films exhibit homogeneous and smooth surface with high optical transparency. Their dielectric properties were analysed by measuring leakage current and capacitance versus voltage of metal-insulator-metal (MIM) capacitor structures. From this analysis, the leakage current density at ??5?V, capacitance and dielectric constant at 1?MHz measured on the hybrid films were 10^?7 A/cm², 51.3?nF/cm² and of 11.4 respectively. Finally, to investigate the electrical performance of the hybrid thin films as a dielectric gate in thin film transistors (TFTs), bottom-gate TFTs were fabricated by depositing the HfO₂-GPTMS dielectric gate layer on ITO-coated glass substrate and subsequently a sputtered a-IGZO thin film as the channel layer. The electrical response of the resulting TFTs demonstrated good saturation mobility of 4.74?cm² V^?1 s^?1, very low threshold voltage of 0.3?V and I_on/I_off current ratio of 10⁴, with low operating voltage under 8?V.     

Fully solution-processed metal oxide thin-film transistors via a low-temperature aqueous route

We report a facile and low-temperature aqueous route for the fabrication of various oxide thin films (Al₂O₃, In₂O₃ and InZnO). A detail study is carried out to reveal the formation and properties of these sol-gel-derived thin films. The results show that the water-based oxide thin films undergo the decomposition of nitrate group as well as conversion of metal hydroxides to form metal oxide framework. High quality oxide thin film could be achieved at low temperature by this aqueous route. Furthermore, these oxide thin films are integrated to form thin-film transistors (TFTs) and the electrical performance is systematically studied. In particular, we successfully demonstrate In₂O₃/Al₂O₃ TFTs with high mobility of 30.88 cm² V⁻¹ s⁻¹ and low operation voltage of 4 V at a maximum processing temperature of 250 °C.     

Significantly enhanced energy density of amorphous alumina thin films via silicon and magnesium co-doping

The different Si-Mg co-doping content was explored to improve the dielectric properties of amorphous Al₂O₃ thin film. According to the analysis of DSC, FT-IR, and XPS spectra, it can be confirmed that a novel structure of glass network is formed in the co-doped Al₂O₃ thin film. More importantly, compared to Al₂O₃ thin film, the leakage current of (Al_.97Si_.02Mg_.01)₂O_y thin film is reduced by 2 orders of magnitude and the breakdown strength is improved from 276?MV/m to 544?MV/m. The corresponding energy density of the modified sample is up to 9.2?J/cm³, which is an enhancement of 6.2?J/cm³ over that of the undoped Al₂O₃ thin film. Based on finite element analysis, the simulation results show that the applied electric field is mainly focused on the glass network, which could strengthen the stability of Al₂O₃ structure and decrease the breakdown probability of the films. From the viewpoint of defect chemistry, another reason for the enhancement of the dielectric properties is that Si-Mg co-doping results in the generation of cation vacancies and thus the formation of oxygen vacancies could be effectively prevented. This work could provide a new design strategy for high-performance dielectric capacitor devices.     

Extremely Thin Al2O3 Surface‐Passivated Nanocrystalline ZnO Thin‐Film Transistors Designed for Low Process Temperature

Nanocrystalline ZnO (nc‐ZnO) thin‐film transistors (TFTs) exhibit inherent instability under bias/photo stresses, which originates from the oxygen molecules adsorbed on the surface of the crystal grains. The space charge region at nanocrystal surfaces that is induced by adsorbed oxygen molecules produces a high electrical potential barrier and significantly interrupts charge transport between the source and drain in nc‐ZnO TFTs. In this article, we developed high‐performance TFTs via the continuous deposition of an extremely thin Al₂O₃ layer on a nc‐ZnO channel. These devices were fabricated by atomic layer deposition at an extremely low process temperature of 150°C, including both the deposition and postannealing temperatures. The nc‐ZnO TFT with an extremely thin Al₂O₃ layer (1.8 nm) showed a significantly higher mobility (25 cm²/Vs) compared to devices without an Al₂O₃ layer (3.6 cm²/Vs). This dramatic difference was ascribed to the suppression of the chemisorption of oxygen molecules at the nanocrystal surface during thermal annealing (reducing the potential barrier width/height between adjacent nanocrystals). Furthermore, ultrathin Al₂O₃‐covered nc‐ZnO TFTs exhibited considerably enhanced electrical/photo stability due to the reduction in adsorption/desorption events of oxygen molecules on the nanocrystal surfaces (with no change in the depletion width after illumination) under gate bias or illumination stress.     

High carrier mobility low-voltage ZnO thin film transistors fabricated at a low temperature via solution processing

Wide-bandgap ZnO TFTs have many potential applications in large-area, flexible electronics and transparent devices because of their low cost, high performance and excellent optical transmittance. High-performance ZnO TFTs fabricated via simple solution processing have been widely studied. However, the key issues of solution-processable ZnO TFTs are the relatively high processing temperature (> 300?°C) and the high operating voltage for achieving the desired electrical properties. Here, we successfully fabricated low-voltage ZnO TFTs at an annealing temperature of ≤?250?°C. The resulting ZnO transistors with high-k terpolymer P(VDF-TrFE-CFE) showed a mobility of up to 5.3?cm² V^?1 s^?1 and an on/off ratio of >?10⁵ at 3?V. Furthermore, the influence of the dielectric constant on the carrier mobility was investigated. A lower k-value dielectric resulted in a high carrier mobility under the same carrier density. Therefore, with a low-k CYTOP dielectric applied to modify the interface between the ZnO semiconductor and the P(VDF-TrFE-CFE) layer, ZnO transistors annealed at 250?°C showed an electron mobility of 13.6?cm² V^?1 s^?1 and an on/off ratio of >?10⁵ at 3?V. To the best of our knowledge, this mobility is the highest value reported to date among the low-voltage solution-processable undoped ZnO TFTs annealed at temperatures of ≤?300?°C.     

Aqueous Solution‐Processable,Flexible Thin‐Film Transistors Based on Crosslinked Chitosan Dielectric Thin Films

The hydrophilic character of chitosan (CS) limits its use as a gate dielectric material in thin‐film transistors (TFTs) based on aqueous solution‐processable semiconductor materials. In this study, this drawback is overcome through controlled crosslinking of CS and report, for the first time, its application to aqueous solution‐processable TFTs. In comparison to natural CS thin films, crosslinked chitosan (Cr‐CS) thin films are hydrophobic. The dielectric properties of Cr‐CS thin films are explored through fabrication of metal–insulator–metal devices on a flexible substrate. Compared to natural CS, the Cr‐CS dielectric thin films show enhanced environmental and water stabilities, with a high breakdown voltage (10 V) and low leakage current (0.02 nA). The compatibility of Cr‐CS dielectric thin films with aqueous solution‐processable semiconductors is demonstrated by growing ZnO nanorods via a hydrothermal method to fabricate flexible TFT devices. The ZnO nanorod‐based TFTs show a high field‐effect mobility (linear regime) of 10.48 cm² V^?1 s^?1. Low temperature processing conditions (below 100 °C) and water as the solvent are utilized to ensure the process is environmental friendly to address the e‐waste problem.     

Strontium doping effects on the characteristics of solution-processed aluminum oxide dielectric layer and its application to low-voltage-operated indium-gallium-zinc-oxide thin-film transistors

In this paper, we investigated the strontium doping effects on the electrical and physical characteristics of solution-processed aluminum oxide dielectric layer and its application to low-voltage-operated indium-gallium-zinc-oxide (IGZO) thin-film transistors (TFTs). With an optimized doping concentration of strontium (5 at%) in aluminum oxide (Al₂O₃), an oxide gate dielectric layer having a dielectric constant of ~7 and low leakage current characteristics (~4 × 10⁻⁷ A/cm² at 3 MV/cm) could be achieved by a solution process, which are comparably better than those of pristine Al₂O₃ film. The enhanced dielectric properties from strontium doping can be attributed to the change in the physical properties of Al₂O₃ film incorporated with strontium, providing charge relaxation of defect states in Al₂O₃ film. Also, since the strontium is highly reactive with oxygen, the strontium substitution through a doping leads to more strongly bound structure in an Al₂O₃ film without considerable lattice distortion. Using the strontium-doped aluminum oxide film as a gate dielectric layer, having a thickness less than 10 nm, solution-processed IGZO TFTs operating at ≤ 1 V were demonstrated showing a field-effect mobility of 1.74 ± 1.10 cm²/V s and an on-current level of ~10⁻⁵ A.     

Eco-friendly tape casting of borosilicate glass/Al2O3 sheets for LTCC applications

This work reports the innovative development of a borosilicate glass/Al₂O₃ tape for LTCC applications using an eco-friendly aqueous tape casting slurry. Polyvinylpyrrolidone (PVP) and polyacrylic acid (PAA) were the respective dispersants, while carboxymethyl cellulose (CMC) and styrene acrylic emulsion (SA) were the respective binders. The results showed that PVP was more suitable than PAA as the dispersant for the aqueous casting slurry, and that 1.5 wt% PVP would achieve well dispersion of CABS glass/Al₂O₃ powder in the aqueous slurry. Moreover, a small amount of 2.0 wt% CMC binder could yield smooth CABS glass/Al₂O₃ tapes crack free. A high-quality CABS glass/Al₂O₃ tape with a smooth surface was made from an aqueous slurry containing 1.5 wt% PVP dispersant, 2.0 wt% CMC binder, and 2.0 wt% PEG-400 plasticizer. The density, tensile strength, and surface roughness of the green tape were 2.05 g/cm³, 0.87 MPa, and 148 nm, respectively. The resulting CABS glass/Al₂O₃ composites sintered at 875 °C exhibited a bulk density of 3.14 g/cm³, a dielectric constant of 8.09, a dielectric loss of 1.0 × 10^?3, a flexural strength of 213 MPa, a thermal expansion coefficient of 5.30 ppm/^°C, and a thermal conductivity of 3.2 W m^?1 K^?1, thus demonstrating its broad prospects in LTCC applications.     

Solution-processed ytterbium oxide dielectrics for low-voltage thin-film transistors and inverters

High permittivity (high k) metal-oxide thin films fabricated via solution processes have recently received much attention for the construction of low-operating voltage and high-performance thin-film transistors (TFTs). In this report, amorphous ytterbium oxide (Yb₂O₃) thin films were fabricated by spin coating and their applications in TFTs were explored. The physical properties of the solution-processed Yb₂O₃ thin films processed at different annealing temperatures were systematically investigated using various characterization techniques. To explore the feasibility of the Yb₂O₃ thin films as gate dielectrics for oxide TFTs, In₂O₃ TFTs based on Yb₂O₃ dielectrics were integrated. All the devices could be operated at 3 V, which is critical for the applications in portable, battery-driven, and low-power electronic devices. The optimized In₂O₃/Yb₂O₃ TFT exhibits high electrical performances, including field-effect mobility of 4.98 cm²/V s, on/off current ratio of ~ 10⁶, turn-on voltage around 0 V, and subthreshold swing of 70 mV/decade, respectively. To demonstrate the potential of In₂O₃/Yb₂O₃ TFT toward more complex logic application, the unipolar inverter was further constructed.     

Effect of alumina on the structure and properties of polyimide matrix films

To improve the properties of polyimide (PI), different mass fractions of alumina (Al₂O₃) nanoparticles, unmodified or modified by KH550, were incorporated into PI matrix to form PI/Al₂O₃ hybrid films by in situ polymerisation. The effects of Al₂O₃ additives on the structure, dielectric and mechanical properties of the films were studied. Fourier transform infrared spectroscopy confirmed the successful preparation of PI/Al₂O₃ hybrid films, and the microstructures of the samples showed a more uniform dispersion of the modified Al₂O₃ nanoparticles than the unmodified ones in the matrix. The dielectric constant of the films increased with increasing filler content, and the maximum electrical breakdown strength of 311 MV m^?1 was obtained with a filler content of 8.0 wt-% modified Al₂O₃ in the matrix. Both unmodified and modified Al₂O₃-reinforced PI hybrids demonstrated improved mechanical properties compared with the PI matrix. Moreover, the properties of films with Al₂O₃ modified by KH550 were better.     

Inkjet-printed thin film radio-frequency capacitors based on sol-gel derived alumina dielectric ink

There has been significant interest in printing radio frequency passives, however the dissipation factor of printed dielectric materials has limited the quality factor achievable. Al₂O₃ is one of the best and widely implemented dielectrics for RF passive electronics. The ability to spatially pattern high quality Al₂O₃ thin films using, for example, inkjet printing would tremendously simplify the incumbent fabrication processes – significantly reducing cost and allowing for the development of large area electronics. To-date, particle based Al₂O₃ inks have been explored as dielectrics, although several drawbacks including nozzle clogging and grain boundary formation in the films hinder progress. In this work, a particle free Al₂O₃ ink is developed and demonstrated in RF capacitors. Fluid and jetting properties are explored, along with control of ink spreading and coffee ring suppression. The liquid ink is heated to 400 °C decomposing to smooth Al₂O₃ films ~120 nm thick, with roughness of <2 nm. Metal-insulator-metal capacitors, show high capacitance density >450 pF/mm², and quality factors of ~200. The devices have high break down voltages, >25 V, with extremely low leakage currents, <2×10⁻⁹ A/cm² at 1 MV/cm. The capacitors compare well with similar Al₂O₃ devices fabricated by atomic layer deposition.     

Atmospheric pressure spatial ALD of Al2O3 thin films for flexible PEALD IGZO TFT application

Atmospheric pressure spatial atomic layer deposition (AP S-ALD)-derived Al₂O₃ films were investigated on the growth temperatures (100 °C ～ 200 °C) and demonstrated as the gate insulator for IGZO thin film transistor (TFT) applications. When the growth temperature increases to 200 °C, growth per cycle (GPC) and refractive index of the Al₂O₃ films were 1.33 Å/cycle and 1.63, respectively. The film density also increased from 2.55 g/cm³ to 2.79 g/cm³ on the growth temperature, which decreasing the carbon impurities of the Al₂O₃ film (100 °C: 3.57 at%, 150 °C: 1.73 at%, 200 °C: N/A). In addition, the impurity and low growth temperature may degrade not only film surface roughness, but also electrical characteristics. As the buffer and gate insulator Al₂O₃ layers, the IGZO TFT were fabricated on a polyimide substrate. The IGZO TFTs with the Al₂O₃ layers showed excellent device performances: 52.48 cm²/V.sec of field effect mobility, ?3.09 ± 0.14 of threshold voltage, and 0.14 ± 0.01 subthreshold swing. In addition, the TFT exhibited excellent bias reliability and mechanical bending stability. This highly stability will be attributed to AP S-ALD Al₂O₃ acting as an excellent insulator.     

Thickness dependence of microstructure,dielectric and leakage properties of BaSn0.15Ti0.85O3 thin films

The BaSn_0.15Ti_0.85O₃ (BTS) thin films are prepared on Pt-Si substrates with thickness ranging from ~ 60?nm to ~ 380?nm by radio frequency magnetron sputtering. The effects of thickness on microstructure, surface morphologies and dielectric properties of thin films are investigated. The thickness dependence of dielectric constant is explained based on the series capacitor model that the BTS thin film is consisted by a BTS bulk layer and an interfacial layer (dead layer) between the BTS and bottom electrode. The thin films with thickness of 260?nm give the largest figure of merit of 76.9@100?kHz, while the tunability and leakage current density are 64.6% and 7.46?×?10^?7 A/cm² at 400?kV/cm, respectively.     

Preparation of dense 0.9Al2O3−0.1TiO2 ceramics with highly improved microwave dielectric properties by a noncontaminated DCC method

In this paper, dense 0.9Al₂O₃ ??0.1TiO₂ ceramics with highly improved microwave dielectric properties were prepared by a noncontaminated direct coagulation casting (DCC) method. The suspension was destabilized and coagulated by consumption of the dispersant without introducing impurity ions. The effect of dispersant content, pH value and solid loading on the rheological properties of 0.9Al₂O₃ ??0.1TiO₂ suspension was investigated. It was found that 0.9Al₂O₃ ??0.1TiO₂ suspension with a high solid loading of 50?vol% and low viscosity of 0.7?Pa?s could be prepared by adding 0.5?wt% TMAOH at the pH in the range of 10–12. The suspension was coagulated by adding 2?vol% GDA when it was treated at 60 ~ 80?°C for 40 ~ 60?min. Compared with dry pressing method, more homogeneous and denser microstructure could be obtained in 0.9A1₂O₃ ??0.1TiO₂ ceramics prepared by DCC via dispersant reaction which were sintered at 1550?°C for 3?h and annealed at 1100?°C for 5?h. The Al₂TiO₅ second phase in 0.9A1₂O₃ ??0.1TiO₂ ceramics prepared by DCC via dispersant reaction could be eliminated more easily by annealing treatment. After annealing treatment, only Al₂O₃ and TiO₂ phases could be detected. Therefore, higher density and much better microwave dielectric properties with ρ?=? 3.81?±?0.02?g/cm³, ε_r =?12.17?±?0.02, Q ×?f =?25,637?±?749?GHz, τ_f =?13.12?±?1.62?ppm/°C were obtained by DCC via dispersant reaction, and the Q ×?f value almost improved by 25%. Without introducing impurity ions, it provides a new insight into preparing complex shaped function ceramics with high properties.     

A lithium aluminium borate composite microwave dielectric ceramic with low permittivity,near-zero shrinkage,and low sintering temperature

A low temperature co-fired dielectric material with low shrinkage during the sintering process can enhance the circuit design of electronic devices. Lithium aluminium borate composite ceramic with a composition of Li₂O:Al₂O₃:B₂O₃ = 1:1:2 (abbreviated: LAB) was prepared by a traditional solid-state reaction method. These ceramics have a low sintering temperature (675–750 °C), low permittivity, and near-zero shrinkage. When the sintering temperature was 725 °C, the LAB ceramics exhibited a small shrinkage of ?2.4% and the best microwave dielectric properties with ε_r = 3.9, Q × f = 35 500 GHz, and τ_?= ?64 ppm/°C. The LAB ceramics sintered at 700 °C have near-zero shrinkage of ? 0.4% and good microwave dielectric properties. The ceramics transformed from (Li₂B₄O₇ and Al₂O₃) to (Li₂Al₂B₄O₁₀ and Li₄Al₄B₆O₁₇) phases with increasing the sintering temperature, which may be the reason why they show marginal shrinkage. In addition, the ceramics could be co-fired with Ag, indicating that this material is a good candidate for low-temperature co-fired ceramic devices.     

Effect of sputtering pressure on structural and dielectric tunable properties of BaSn0.15Ti0.85O3 thin films grown by magnetron sputtering

Lead?free ferroelectric BaSn_0.15Ti_0.85O₃ (BTS) thin films are grown on Pt-coated Si substrates by magnetron sputtering at 650?°C, the effect of sputtering pressure on the microstructural, surface morphological, dielectric properties and leakage characteristic is systematically investigated. XRD analysis shows the crystallinity of BTS thin films with perovskite structure can be improved by appropriate control of the sputtering pressure. The surface morphology analyses reveal that grain size and roughness can be affected by sputtering pressure. The BTS thin films prepared at sputtering pressure of 3.0?Pa exhibit a low dispersion parameter of 0.006, a medium dielectric constant of ~357, a high dielectric tunability of 65.7%@?400?kV/cm and a low loss tangent of 0.0084?@?400?kV/cm. Calculation of figure of merit (FOM) displays a high value of 84.1, and the measurement of leak current shows a very low value of 4.39?×?10^–7 A/cm² at 400?kV/cm. The results indicate that BTS thin film deposited sputtering pressure of 3.0?Pa is an excellent candidate for electrically steerable applications     

Low leakage rate of silicate glass modified with Al2O3 for solid oxide fuel cell

The gas tightness of glass sealing materials is a big challenge for the solid oxide fuel cell (SOFC) stacks operating at high temperature. Thermal, sintering, crystallization behavior and gas tightness properties of the glass-based with two different Al₂O₃ contents sealants are evaluated and discussed. The study showed that the sealants avoid cracks at the interface on NiO-YSZ (NiO-yttria stabilized zirconia) and SUS430 stainless steel interconnect substrates. The Al₂O₃ embedded in the glass matrix as a second phase, and promoted crystallization of K[AlSi₃O₈] at the early stage. This may because some ultrafine Al₂O₃ particles whose structure is destroyed by prolonged high temperature treatment according XRD and TEM analysis. Especially, the sealant containing 5 wt% Al₂O₃ undergoes a thermal cycle and maintains a stable leakage rate below 10^?4 sccm?cm^?1 for about 1000 h at 750 °C. The above results prove the possibility of using the Al₂O₃-doped sealing glass for SOFC stacks.