Exciton Dynamics in Semiconductor Nanocrystals

This review article provides an overview of recent advances in the study and understanding of dynamics of excitons in semiconductor nanocrystals (NCs) or quantum dots (QDs). Emphasis is placed on the relationship between exciton dynamics and optical properties, both linear and nonlinear. We also focus on the unique aspects of exciton dynamics in semiconductor NCs as compared to those in bulk crystals. Various experimental techniques for probing exciton dynamics, particularly time‐resolved laser methods, are reviewed. Relevant models and computational studies are also briefly presented. By comparing different materials systems, a unifying picture is proposed to account for the major dynamic features of excitons in semiconductor QDs. While the specific dynamic processes involved are material‐dependent, key processes can be identified for all the materials that include electronic dephasing, intraband relaxation, trapping, and interband recombination of free and trapped charge carriers (electron and hole). Exciton dynamics play a critical role in the fundamental properties and functionalities of nanomaterials of interest for a variety of applications including optical detectors, solar energy conversion, lasers, and sensors. A better understanding of exciton dynamics in nanomaterials is thus important both fundamentally and technologically.     

Progress in the Light Emission of Colloidal Semiconductor Nanocrystals

Some 25 years ago it was found that semiconductor nanocrystals emitted light. Since then tremendous progress has been made with respect to increasing the emission quantum yields, extending the spectral range that may be addressed, from the UV across to the near infrared, and improving the color purity. Here some major lines in these developments are reviewed, touching on milestones as well as on the principles of the most successful preparative approaches.     

Second‐Harmonic Generation from a Single Core/Shell Quantum Dot

Nanoparticles emitting two‐photon luminescence are broadly used as photostable emitters for nonlinear microscopy. Second‐harmonic generation (SHG) as another two‐photon mechanism offers complementary optical properties but the reported sizes of nanoparticles are still large, of a few tens of nanometers. Herein, coherent SHG from single core/shell CdTe/CdS nanocrystals with a diameter of 10 to 15 nm is reported. The nanocrystal excitation spectrum reveals resonances in the nonlinear efficiency with an overall maximum at about 970 nm. Polarization analysis of the second‐harmonic emission confirms the expected zinc blende symmetry, and allows extraction of the three‐dimensional nanocrystal orientation. The small size of these nonlinearly active quantum dots, together with the intrinsic coherence and orientation sensitivity of the SHG process, are well adapted for ultrafast probing of optical near‐fields with high resolution as well as for orientation tracking for bioimaging applications.     

Localized Surface Plasmon Resonance Enhanced Light Absorption in AuCu/CsPbCl3 Core/Shell Nanocrystals

Localized surface plasmon resonance (LSPR) is shown to be effective in trapping light for enhanced light absorption and hence performance in photonic and optoelectronic devices. Implementation of LSPR in all-inorganic perovskite nanocrystals (PNCs) is particularly important considering their unique advantages in optoelectronics. Motivated by this, the first success in colloidal synthesis of AuCu/CsPbCl₃ core/shell PNCs and observation of enhanced light absorption by the perovskite CsPbCl₃ shell of thickness in the range of 2–4 nm, enabled by the LSPR AuCu core of an average diameter of 7.1 nm, is reported. This enhanced light absorption leads to a remarkably enhanced photoresponse in PNCs/graphene nanohybrid photodetectors using the AuCu/CsPbCl₃ core/shell PNCs, by more than 30 times as compared to the counterparts with CsPbCl₃ PNCs only (8–12 nm in dimension). This result illustrates the feasibility in implementation of LSPR light trapping directly in core/shell PNCs for high-performance optoelectronics.     

核壳型复合半导体纳米粒子的研究

核壳型复合半导体纳米粒子,作为复合半导体纳米粒子材料的一个重要分支,凭借其优异的性质,受到了广泛关注.本文主要介绍了有机/无机和无机/无机核壳型复合半导体纳米微粒及其光学性质、分类、制备方法和应用.并对其发展做了展望.     

Absorption Enhancement in “Giant” Core/Alloyed‐Shell Quantum Dots for Luminescent Solar Concentrator

Luminescent solar concentrators (LSCs) can potentially reduce the cost of solar cells by decreasing the photoactive area of the device and boosting the photoconversion efficiency (PCE). This study demonstrates the application of “giant” CdSe/Cd_xPb_1–xS core/shell quantum dots (QDs) as light harvesters in high performance LSCs with over 1.15% PCE. Pb addition is critical to maximize PCE. First, this study synthesizes “giant” CdSe/Cd_xPb_1–xS QDs with high quantum yield (40%), narrow size distribution (<10%), and stable photoluminescence in a wide temperature range (100–300 K). Subsequently these thick alloyed‐shell QDs are embedded in a polymer matrix, resulting in a highly transparent composite with absorption spectrum covering the range 300–600 nm, and are applied as active material for prototype LSCs. The latter exhibits a 15% enhancement in efficiency with respect to 1% PCE of the pure‐CdS‐shelled QDs. This study attributes this increase to the contribution of Pb doping. The results demonstrate a straightforward approach to enhance light absorption in “giant” QDs by metal doping, indicating a promising route to broaden the absorption spectrum and increase the efficiency of LSCs.     

3D/2D Core/Shell Perovskite Nanocrystals for High-Performance Solar Cells

All-inorganic lead halide perovskite nanocrystals (NCs) emerge as a rising star in photovoltaic fields on account of their excellent optoelectronic properties. However, it still remains challenging to further promote photovoltaic efficiency due to the susceptible surface and inevitable vacancies. Here, this work reports a 3D/2D core/shell perovskite heterojunction based on CsPbI₃ NCs and its performance in solar cells. The guanidinium (GA⁺) rich 2D nanoshells can significantly passivate surface trap states and lower the capping ligand density, resulting in improved photoelectric properties and carrier transport and diminished nonradiative recombination centers via the hydrogen bonds from amino groups in GA⁺ ions. Consequently, an outstanding power conversion efficiency (PCE) of up to 15.53% is realized, substantially higher than the control device (13.77%). This work highlights the importance of surface chemistry and offers a feasible avenue to achieve high-performance perovskite NCs-based optoelectronic devices.     

不同壳层的CdS／ZnS核／壳结构量子点的温度相关荧光性质

报导了CdS／ZnS纳米晶体（NCs）的制备过程和其光学}生质。通过采用连续离子层吸附和反应技术（SILAR）,我们用少量的表面活性剂合成了不同壳层的四个样品,包括CdS核纳米晶以及具有1～3层ZnS壳的CdS／ZnS核／壳结构纳米晶体样品。发现具有一层ZnS壳的CdS／ZnS样品的荧光量子产率大约比未包覆壳层的CdS纳米晶体样品的强11倍。另外,随着壳层的增加（增至两到三层）,荧光量子产率呈现下降的趋势。对样品进行了温度相关的光谱测量,发现CdS／ZnS和CdS一样具有特殊的光学特性。     

Highly Stable,Near‐Unity Efficiency Atomically Flat Semiconductor Nanocrystals of CdSe/ZnS Hetero‐Nanoplatelets Enabled by ZnS‐Shell Hot‐Injection Growth

Colloidal semiconductor nanoplatelets (NPLs) offer important benefits in nanocrystal optoelectronics with their unique excitonic properties. For NPLs, colloidal atomic layer deposition (c‐ALD) provides the ability to produce their core/shell heterostructures. However, as c‐ALD takes place at room temperature, this technique allows for only limited stability and low quantum yield. Here, highly stable, near‐unity efficiency CdSe/ZnS NPLs are shown using hot‐injection (HI) shell growth performed at 573 K, enabling routinely reproducible quantum yields up to 98%. These CdSe/ZnS HI‐shell hetero‐NPLs fully recover their initial photoluminescence (PL) intensity in solution after a heating cycle from 300 to 525 K under inert gas atmosphere, and their solid films exhibit 100% recovery of their initial PL intensity after a heating cycle up to 400 K under ambient atmosphere, by far outperforming the control group of c‐ALD shell‐coated CdSe/ZnS NPLs, which can sustain only 20% of their PL. In optical gain measurements, these core/HI‐shell NPLs exhibit ultralow gain thresholds reaching ≈7 µJ cm^?2. Despite being annealed at 500 K, these ZnS‐HI‐shell NPLs possess low gain thresholds as small as 25 µJ cm^?2. These findings indicate that the proposed 573 K HI‐shell‐grown CdSe/ZnS NPLs hold great promise for extraordinarily high performance in nanocrystal optoelectronics.