Thin relaxed SiGe layer grown on Ar^＋ ion implanted Si substrate by ultra-high vacuum chemical vapor deposition

1 Introduction Relaxed SiGe layers have gained considerable attention due to their applications in strained Si/SiGe high electron mobility transistor, metal-oxide-semi- conductor field-effect transistor (MOSFET) and other devices. High-quality relaxed SiGe templates, espe- cially those with low threading dislocation density and smooth surface, are crucial for the electrical perform- ance of devices.[1,2] In order to realize high-quality relaxed SiGe layer with such good characteristics, …     

硼缓冲注入层对氮化硼薄膜生长的影响

采用射频磁控溅射法在注硼的硅和高速钢基体上沉积制备c-BN薄膜,采用红外光谱(Infrared spectra,IR)、X射线光电子能谱(X-ray photoelectron spectrum,XPS)和原子力显微镜(Atomicforce microscopy, AFM)等分析方法对沉积的薄膜进行了表征分析.实验结果表明:硅基体上离子注硼有利于c-BN薄膜内应力的降低;合适的注硼量注入高速钢基体有利于c-BN的生成和薄膜内应力的降低.AFM分析表明,注硼处理的高速钢基体上沉积的薄膜表面形貌平整,结晶性较好.此外也采用XPS方法对硅和高速钢基体硼过渡层进行了成分与组织结构分析,探索研究了硼缓冲层对c-BN薄膜生长的影响.     

Electrical conductivity increase of Al-doped ZnO films induced by high-energy-heavy ions

We have investigated the effects on electrical properties of Al-doped ZnO (AZO) semiconductor films induced by 90 MeV Ni, 100 MeV Xe and 200 MeV Xe ions. The AZO films with c-axis orientation on SiO₂-glass substrate were prepared by using a RF-sputter-deposition method at 400 °C. We find that the conductivity increases by two order of magnitude under high-energy-heavy ion irradiation, as has already been observed for 100 keV Ne ion irradiation. We also find that the efficiency of the conductivity enhancement, which is defined as the conductivity increment per a unit of ion fluence, scales super-linearly with the electronic stopping power (S_e). The carrier density and mobility for unirradiated and irradiated AZO films are presented.     

铀表面电弧离子镀Ti基薄膜耐蚀性能与机理研究

利用电弧离子镀技术在铀表面制备了TiN单层膜、梯度膜和Ti/TiN多层薄膜,并进行了Cl-腐蚀和极化实验.结果表明:性能最好的-800 V脉冲偏压下,样品在50 μg/g Cl-溶液中,Ecorr升高了～714 mV,Icorr降低了～2个数量级.单层膜、梯度膜为贯穿基体的缺陷失效,抗腐蚀性能差;而多层膜提高抗腐蚀性能源于层状失效,腐蚀介质到达基体更加困难,抗腐蚀性能优良.     

Erosion of thin hydrogenated carbon films in oxygen,oxygen/hydrogen and water plasmas

The erosion of amorphous hydrogenated carbon films in oxygen, oxygen/hydrogen and water electron cyclotron resonance plasmas was investigated by in situ ellipsometry. The erosion was measured as a function of the energy of the impinging ions and the substrate temperature. Erosion is most effective in pure oxygen plasmas. The erosion rate rises with increasing ion energy and substrate temperature, in the latter case however only at low ion energies. The reaction layer at the surface of the eroded film is further analyzed by X-ray photoelectron spectroscopy (XPS). The C 1s peak of the XPS spectra shows, that oxygen is implanted in the films and forms double and single bonds to the carbon atoms. This modification, however, is limited to a few atomic layers.     

多束动态混合注入技术制备TiN厚膜的工艺、结构及性能研究

在多束动态混合(MBMI)-注入系统上利用MBMI技术制备TiN膜,XRD分析表明,N入射角度α(o)、氮钛原子到达比RN/Ti、N2分压PN2对膜生长的择优取向及相结构有影响;性能研究结果表明,高的入射离子能量Ei、基体温度Ts以及合适的RN/Ti对TiN膜的显微硬度HK和膜 -基结合力都有正面影响。     

低能Ar离子束辅助沉积Ag(111)薄膜

采用低能Ar离子束辅助沉积方法,在Mo/Si(100)基底上制备Ag膜。实验发现,用Ar离子束溅射沉积的Ag膜呈(111)择优取向。若在溅射沉积Ag膜的同时,用能量为500eV的Ar离子束沿衬底法线方向对Ag膜进行辅助轰击,当离子/原子到达比为0.06时,Ag膜呈(111)择优取向;当离子/原子到达比增大到0.18时,Ag膜呈(111)和(100)混合晶向。若Ar离子的入射角为35.26°,离子/原子到达比为0.06时,Ag膜呈(111)择优取向;当离子/原子比增大到0.18时,Ag膜呈(111)和微弱的(100)混合晶向。若Ar离子的入射角为54.7°,离子/原子到达比为0.06时,沉积的Ag膜呈很强的(111)择优取向。     

Ions Bombardment in Thin Films and Surface Processing

Ions bombardment is very important in thin films and surface processing.The ion energy and ion flux are two improtant parameters in ion bombardment.The ion current density mainly dependent on the plasma density gives the number of energetic ions bombarding the substrate.The self-bias voltage in plasma sheath accelerates plasma ions towards the substrate.RF discharge can increase plasma density and RF bias can also provide the insulator substrate with a plasma sheath.In order to choose and control ion energy,ion density,the angle of incidence,and ion species,ion beam sources are used.New types of electrodeless ion sources(RF,MW,ECR-MW) have been introduced in detail,In the last,the effects of ion bombardment on thin films and surface processing are presented.     

离子束辅助沉积制备TiN/Si3N4纳米超硬膜的工艺研究

采用离子束辅助沉积法(Ion beam assisted deposition,IBAD)在单晶硅片上进行沉积制备了TiN/Si3N4纳米复合超硬薄膜;研究了辅助束流、轰击能量和Ti:Si靶面积比等工艺参数对TiN/Si3N4超硬纳米复合薄膜性能的影响.此外采用纳米硬度计、光电子能谱(X-ray photoelectron spectrum,XPS)和x射线衍射分析(X-raydiffraction,XRD)方法研究了纳米复合薄膜的性能、成分与组织结构;采用原子力显微镜(Atomic forcemicroscopy,AFM)分析了薄膜的表面形貌,并初步探讨了TiN/Si3N4纳米复合超硬薄膜的生长机理.     

离子束分解卤化物涂层镀膜技术的初步实验

离子束轰击化合物涂层镀膜是七十年代发展起来的一种新方法。本文叙述了用这种方法在硅片和玻璃片上形成钯膜的过程,并给出了用扫描电子显微镜和俄歇电子谱仪观察分析的结果。最后讨论了镀膜的机理和可能的应用。     

Growth, characterization and effect of substrate bias on ZnO prepared by reactive capillaritron ion beam sputtering deposition

ZnO thin films have been deposited on Si substrates by reactive ion beam sputtering deposition utilizing a capillaritron ion source. All the as-deposited ZnO films exhibit a preferred (0 0 2) growth direction while the grain size increases as oxygen partial flow rate increases. An optimum photoluminescence result was achieved using oxygen partial flow rate of ∼40% that the ratio of integrated deep level emission to that of integrated near-band-edge emission is less than 1.5. The atomic percentage ratio of Zn:O remains at 55/45, regardless of oxygen partial flow rates. With the applied substrate bias, the atomic percentage ratio of Zn/O changes to 40/60, indicating that stoichiometric ZnO may be achieved by selecting appropriate substrate bias. With the substrate bias applied, increased amount of oxygen atoms were found located in oxygen deficient matrixes, likely due to the bombardment of secondary ions.     

离子束辅助沉积MoSx膜的特性研究

从轰击离子种类，辅助沉积方式、不同衬底材料以及存放环境湿度等因素对离子束辅助沉积的ＭｏＳｘ膜作特性的影响作了研究。发现这些因素在膜的沉积或使用过程中对其品质和特性都产生不能忽视的影响。     

动态离子束混合技术制备氧化铬薄膜的X射线光电子能谱与俄歇电子能谱研究

本文介绍的动态离子束混合技术制备氧化铬薄膜系在不锈钢基体上进行1keV氩离子束溅射沉积铬(同时通入一定量的O),并用100 keV的氩离子束或氧离子束轰击该样品.对两种离子束轰击形成的氧化铬薄膜进行了X射线光电子能谱(X-ray photoelectron spectroscopy,XPS)和俄歇电子能谱(Auger electron spectroscopy,AES)的分析研究.发现Ar 离子束制备的氧化铬薄膜主要是Cr2O3化合物,而O 离子束制备的氧化铬薄膜含有其它价态的铬氧化物.Ar 离子束制备氧化铬薄膜的污染碳少于O 离子束制备.与O 离子束制备相比较,相同能量的Ar 离子束轰击更有利于提高沉积的Cr原子与周围O2的反应性;Ar 离子束制备的氧化铬薄膜过渡层的厚1/3左右,较厚的过渡层显示了制备的薄膜具有较好的附着力.     

Micro and nano patterning by focused ion beam enhanced adhesion

We report a new method of generating nano and micro patterns using focused ion beam (FIB) induced adhesion. The method utilizes selective irradiation of thin metallic films grown on substrates by focused ion beam followed by peel off. After peel off of the irradiated thin film it is observed that the ion beam scanned portions are retained on the substrate, creating nano and micro patterns. The method is suitable for materials of which the adhesion to the substrate can be improved by ion bombardment. The phenomenon has been demonstrated by creating gold nano patterns of different shapes and sizes ranging from 500 nm to 5 μm on SiO₂–Si substrate using 10–30 keV Ga FIB at beam currents up to 10 pA. The mechanism involved in the process has been discussed. The technique could be utilized to prepare micro and nano patterns of thin films deposited on an appropriate substrate for optical, plasmonic and sensor related applications.     

Ion-induced electrostatic charging of ice

We studied electrostatic charging on amorphous ice films induced by the impact of 100 keV Ar⁺ ions at 45° incidence. We derived the positive surface electrostatic potential from the kinetic energy of sputtered molecular ions. Measurements were performed as a function of film thickness, ion flux and accumulated fluence. The main results are (a) films charge up to a saturation value, following an exponential time dependence. (b) The time constant for charging is approximately proportional to the reciprocal of the ion flux. (c) The maximum surface voltage depends on film thickness and ion flux. (d) Charging does not occur for films thinner than the maximum range of projectile. (e) Dielectric breakdown is observed for surface potentials above ∼100 V. We explain the measurements with a model in which charges can drift into the substrate or be trapped temporarily near the ionization range of the projectiles. A charge can be released from the trap by the electric field produced by a nearby charge injected by subsequent projectiles.     

Deposition of metastable binary alloy thin films using sequential ion beams from a single ion source

A technique of producing metastable films by the sequential deposition of low energy ion beams of two different ion species from a single ion source system is described. A microprocessor controlled data acquisition and control system sequentially selects one ion species at a time. The selected ion species is deposited onto a substrate at a low energy which gives an almost unity sticking coefficient and a negligible sputtering coefficient. With this extreme low energy ion bombardment the atomic mixing process is governed mainly by the injected particle range distribution and to a lesser degree by collisional mixing. By selecting the optimum duty cycle of two sequential ion beams, the film composition can be programmable as growth proceeds. Some simulation results of the growth of binary Pb/Mg films are presented when atomic mixing theories are modified to represent film growth.     

Deposition of polycrystalline Si thin films on glass substrates by direct negative Si ion beam deposition

Polycrystalline Si (Poly-Si) thin films were deposited on a glass substrate by direct negative Si (Si⁻) ion beam deposition. The glass substrate temperature was kept constant at 500 °C for all depositions. Prior to deposition, the ion energy spread and ion-to-atom arrival ratio were evaluated as a function of the ion beam energy.The Si⁻ ion energy spread was less than 10% regardless of the ion energy, while the ion-to-atom arrival ratio increased proportionally from 1.3 to 1.6 according to the ion beam energy.Atomic force microscopy images showed that a relatively rough surface was obtained at 50 eV of Si⁻ ion energy and it is also concluded that the Si⁻ ion beam irradiation at 50 eV is effective to deposit Si thin film with small grains as shown in Fig. 3.     

Ion impact effect on carbon coatings studied in a double plasma device

Hard carbon thin films were formed with a novel deposition technique based on double plasma operation: hydrocarbon ions are extracted from a driver plasma and injected onto a substrate in a target plasma. This technique allows us to avoid the ion-induced charge-up on the film surface. As a result, two pronounced effects of ion bombardment on the carbon film were found. Firstly, the harness of the films gradually increases with increasing ion energy E_i, and a Vickers hardness number of 4000 kg/mm² is obtained at E_i = 200 eV. Secondly, the hydrogen atom content in the carbon films is reduced to $\text{1}\text{10}$ by the ion impact.