Effects of He (90%)/H2 (10%) plasma treatment on electric properties of low dielectric constant SiCOH films

In microelectronics industry, integration of the low dielectric constant (low-k) material films is a continuing issue due to the decreasing device feature size. To improve electric properties, various post-deposition treatments of the low-k material films can be used. In this work, we used room temperature treatment of He/H₂ plasma and investigated the effects of plasma treatment on the electrical properties of low-k SiOCH films. Plasma treatment time changed from 300 to 1800 s. After treatment, the dielectric constant was decreased from 2.9 to 2.48, and the thickness of the low-k SiCOH films changed by only ～5%. The leakage current densities of the low-k SiCOH films were decreased to ～10^?11 A/cm², with treatment time ≥600 s. The breakdown occurred only around 2 V for films plasma-treated for 600 and 900 s. However, for 1800 s treatment time, the breakdown voltage was enhanced dramatically and breakdown occurred at applied voltage higher than 40 V. The surface composition change of the films after treatment was investigated by X-ray photoelectron spectroscopy (XPS). As the plasma treatment time was increased, the intensities of CC/CH and CSi peaks were decreased while the intensities of SiO and CO peaks were increased. It is thought that increase of oxygen content of the SiCOH film, after plasma treatment, contributed to leakage current reduction and breakdown voltage increase.     

The effects of surface-plasma treatment of thin-film hydrogen silesquioxane low k dielectric

Hydrogen silesquioxane (HSQ) is a low dielectric constant material and a potential substitute for conventional silicon dioxide insulator in ULSI system. In this study, the effect of plasma treatment on HSQ films is investigated. The bond structure changes of HSQ after curing, plasma treatment, and water absorption were observed with Fourier transform infrared spectroscopy. Densification of the film occurs after curing, the higher the curing temperature, the lower the dielectric constant and refractive index of the film. Both H₂- and O₂-plasma treatments are employed in this study. The H₂-plasma bombardment enhances the formation of the network structure but raises the moisture absorption of HSQ films. It is found that films subjected to both H₂- and O₂-plasma treatments have lower dielectric constant than those subjected to O₂ treatment alone. Possible mechanisms for the effects of plasma treatments are explored. The residual stress of HSQ film is also studied.     

Solution-deposited GdCeOx thin films: Microstructure,band structure,and dielectric property

The microstructural and electrical properties of solution-deposited GdCeO_x dielectric thin films with different mixing ratios were studied. The Ce incorporation enhanced the degree of crystallization and the refractive index of the Gd₂O₃ film, reduced the hysteresis and increased the dielectric constant. According to reflective electron energy loss spectroscopy and X-ray photoelectron spectroscopy analyses, the bandgap of the GdCeO_x film gradually decreased with increasing Ce/(Gd + Ce) atomic ratio, which was primarily affected by the reduction of the valence band offset.     

Dielectric behavior of TiO2 ceramic prepared by plasma activated sintering

Rutile-phase TiO₂ ceramic was rapidly fabricated by plasma activated sintering (PAS) at 650–850 °C for 3 min under 30 MPa. The temperature and frequency dependences of the dielectric properties (dielectric constant and dielectric loss) for the dense TiO₂ ceramic were investigated, and the dielectric behavior was briefly discussed. It was demonstrated that extraordinarily high dielectric constant (2–5 × 10⁴) was observed in the whole experimental ranges of ? 160 to 200 °C and 1 kHz–1 MHz. Moreover, the dielectric loss kept a relatively normal level, however, its temperature and frequency dependences were markedly different with those of the rutile-phase TiO₂ preforms. The unusual dielectric behavior was related with the particular dielectric polarizations of the TiO₂ ceramic and its dominant form of loss under different conditions.     

Sintering temperature dependence of microwave dielectric properties in Mg4(TaNb1−xVx)O9 compounds

The relationship between the sintering temperature and the microwave dielectric properties of Mg₄(TaNb_1−xV_x)O₉ (MTNV) compounds were investigated in this study in order to reduce the sintering temperature of the compound. A small amount of V₂O₅ doping lowered the sintering temperature of the MTNV compounds. The variations in the dielectric constant and the quality factor of the MTNV compounds depended on the amount of V₂O₅ doping and the sintering temperature; a small amount of V₂O₅ doping was effective in allowing low sintering temperatures without a detrimental effect on these dielectric properties. As a result, a dielectric constant of approximately 12 and a quality factor of approximately 200,000 GHz were obtained when the MTNV compounds with x = 0.2 was sintered at 1200 °C. The temperature coefficient of resonant frequency of the MTNV compound with x = 0.025 slightly changed from −63 to −73 ppm/ °C with an increased sintering temperature because of the presence of a secondary phase.     

Effect of La2O3 doping on the tunable and dielectric properties of BST/MgO composite for microwave tunable application

Undoped and La₂O₃doped (0.5, 1.0, 2.0, 3.0 wt.%) Ba_0.55Sr_0.45TiO₃/MgO composites were prepared by traditional ceramic processing and their structural, surface morphological, tunable properties and their dielectric properties at low frequency and microwave frequency were systemically examined. The result shows that La₂O₃ dopant has a strong effect on the average grain size. The La₂O₃ doped samples have lower temperature coefficient of capacitance than the undoped. The 0.5 wt.% La₂O₃ doped sample has a little higher tunability than the undoped and the tunability of other doping concentration samples is lower as compared to the undoped. The addition of La₂O₃ decreases the dielectric constant and increases quality factor (Q × f) at microwave frequency. The 0.5 wt.% La₂O₃ doped samples have the best properties among these samples and have a higher tunability, lower dielectric constant and lower dielectric loss tangent at microwave frequency and these properties are very beneficial to the development of the tunable devices application.     

Gd2O3 doped 0.82Bi0.5Na0.5TiO3–0.18Bi0.5K0.5TiO3 lead-free piezoelectric ceramics

Gd₂O₃ (0–0.8 wt.%)-doped 0.82Bi_0.5Na_0.5TiO₃–0.18Bi_0.5K_0.5TiO₃ (BNKT18) lead-free piezoelectric ceramics were synthesized by a conventional solid-state process. The effects of Gd₂O₃ on the microstructure, the dielectric, ferroelectric and piezoelectric properties were investigated. X-ray diffraction (XRD) data shows that Gd₂O₃ in an amount of 0.2–0.8 wt.% can diffuse into the lattice of BNKT18 ceramics and form a pure perovskite phase. Scanning electron microscope (SEM) images indicate that the grain size of BNKT18 ceramics decreases with the increase of Gd₂O₃ content; in addition, all the modified ceramics have a clear grain boundary and a uniformly distributed grain size. At room temperature, the ferroelectric and piezoelectric properties of the BNKT18 ceramics have been improved with the addition of Gd₂O₃, and the BNKT18 ceramics doped with 0.4 wt.% Gd₂O₃ have the highest piezoelectric constant (d₃₃ = 137 pC/N), highest relative dielectric constant (ε_r = 1023) and lower dissipation factor (tan δ = 0.044) at a frequency of 10 kHz. The BNKT18 ceramics doped with 0.2 wt.% Gd₂O₃ have the highest planar coupling factor (k_p = 0.2463).     

Microwave dielectric properties of Ba3La2Ti2Nb2−xTaxO15 ceramics

High dielectric constant and low loss ceramics in the system Ba₃La₂Ti₂Nb_2−xTa_xO₁₅ (x = 0–2) have been prepared by conventional solid-state ceramic route. Ba₃La₂Ti₂Nb_2−xTa_xO₁₅ solid solutions adopted A₅B₄O₁₅ cation-deficient hexagonal perovskite structure for all compositions. The materials were characterized at microwave frequencies. They show a linear variation of dielectric properties with the value of x. Their dielectric constant varies from 49.8 to 45.1, quality factor Q_u × f from 22,000 to 31,040 GHz and temperature variation of resonant frequency from + 6.9 to − 13.4 ppm/°C as the value of x increases. These low loss ceramics might be used for dielectric resonator (DR) applications.     

New dielectric materials of xSrTiO3–(1 − x)Ca(Mg1/3Nb2/3)O3 ceramic system at microwave frequency

The crystal structures and the microwave dielectric properties of the xSrTiO₃–(1 − x)Ca(Mg_1/3Nb_2/3)O₃ perovskite ceramic system have been investigated. In order to achieve a temperature-stable material, we studied a method of combining a positive temperature coefficient material with a negative one. SrTiO₃ has dielectric properties of dielectric constant ε_r ∼ 205, Q × f value ∼ 4200 GHz and a large positive τ_f value ∼ 1700 ppm/°C. Ca(Mg_1/3Nb_2/3)O₃ possesses high dielectric constant (ε_r ∼ 28), high quality factor (Q × f value ∼ 58,000 at 7 GHz) and negative τ_f value (− 48 ppm/°C). As the x value varies from 0.2 to 0.8, the xSrTiO₃–(1 − x)Ca(Mg_1/3Nb_2/3)O₃ system has the dielectric properties as follows: 40 < ε_r < 123, 4600 < Q × f < 33,400 and − 23 < τ_f < 600. A new microwave dielectric material, 0.3SrTiO₃–0.7Ca(Mg_1/3Nb_2/3)O₃, applicable in microwave devices is suggested and possesses the dielectric properties of a dielectric constant ε_r ∼ 46, a Q × f value ∼ 29,300 GHz (at 6.8 GHz) and a τ_f value ∼− 2 ppm/°C. A near-zero τ_f value can be achieved by adjusting the x value of xSrTiO₃–(1 − x)Ca(Mg_1/3Nb_2/3)O₃ ceramics.     

Structure and electrical properties of Er2O3 doped 0.82Bi0.5Na0.5TiO3–0.18Bi0.5K0.5TiO3 lead-free piezoelectric ceramics

Er₂O₃ (0–0.8 wt.%)-doped 0.82Bi_0.5Na_0.5TiO₃–0.18Bi_0.5K_0.5TiO₃ (BNKT18) lead-free piezoelectric ceramics were synthesized by a conventional solid-state reaction method. The effects of Er₂O₃ on the microstructure and electrical properties were investigated. X-ray diffraction (XRD) data shows that Er₂O₃ in an amount of 0.2–0.8 wt.% can diffuse into the lattice of the BNKT18 ceramics and form the pure perovskite phase. Scanning electron microscope (SEM) images indicate that the grain sizes of BNKT18 ceramics decrease with the increase of Er₂O₃ content; in addition, the modified ceramics have the clear grain boundary and a uniformly distributed grain size. At room temperature, the electrical properties of the BNKT18 ceramics have been improved with the addition of Er₂O₃, and the BNKT18 ceramics doped with 0.6 wt.% Er₂O₃ have the highest piezoelectric constant (d₃₃ = 138 pC/N), the highest planar coupling factor (k_p = 0.2382), the highest remnant polarization (P_r = 25.2 μC/cm²), the higher relative dielectric constant (ε_r = 936) and lower dissipation factor (tanδ = 0.047) at a frequency of 10 kHz. Moreover, the T_m and T_d of the samples increase with the addition of Er₂O₃.     

Effect of filler content on the dielectric properties of anisotropic conductive adhesives materials for high-frequency flip–chip interconnection

The dielectric property of anisotropic conductive film (ACF) as an interconnect materials in the flip–chip joints is becoming important concern for device packaging solution at high-frequency due to low parasitic effect on the signal transfer. The effects of non-conductive, dielectric filler content on dielectric properties of ACA materials, like dielectric constant, loss factor and loss tangent, and conductivity at high-frequency were investigated. Frequency is dominating factor in determining dielectric constant, loss factor, and conductivity. However, the filler content is dominant only on dielectric constant, not on the loss factor, and conductivity at low-frequency range. The effect of low dielectric constant (low-k) filler addition on high-frequency behavior of ACF interconnection in flip–chip assembly was also investigated. Impedance parameters of low-k ACF with Ni filler and low-k SiO₂ filler extracted from measurement were compared with that of conventional ACF with only Ni filler. The resonant frequency of conventional ACF flip–chip interconnect was 13 GHz, while the resonant frequency of low-k ACF including low-k SiO₂ filler was found at 15 GHz. This difference is originated from capacitance decrease of polymer matrix between bump and substrate pad due to change in dielectric constant of polymer matrix, which was verified by measurement-based modeling. The high-frequency property of the conductive adhesive flip–chip joint, such as resonant frequency can be enhanced by low-k polymer matrix.     

Preparation,characterization and dielectric properties of Ba5LnZnTa9O30 (Ln=La,Sm) ceramics

Ba₅LnZnTa₉O₃₀ (Ln=La, Sm) ceramics were prepared by high temperature solid-state reaction route. The samples were characterized by X-ray diffraction, scanning electron microscopy (SEM), and differential scanning calorimetry (DSC) methods. They belong to paraelectric phase of filled tetragonal TB structure at room temperature with unit cell a=12.5909(4) Å, c=3.9622(2) Å for Ba₅LaZnTa₉O₃₀; and a=12.5777(4) Å, c=3.9544(2) Å for Ba₅SmZnTa₉O₃₀. At 1 MHz, Ba₅LaZnTa₉O₃₀ has high dielectric constants of 89 with low dielectric loss 0.0067, and temperature coefficients of the dielectric constant (τ_ε) −811 ppm °C⁻¹; Ba₅LaZnTa₉O₃₀ has dielectric constants of 74 with low dielectric loss 0.0035, and τ_ε −474 ppm °C⁻¹.     

Influence of Ga3+ ions on spectroscopic and dielectric features of multi component lithium lead boro bismuth silicate glasses doped with manganese ions

Multi-component glasses of the chemical composition 19.5Li₂O–20PbO–20B₂O₃–30SiO–(10 − x)Bi₂O₃–0.5MnO:xGa₂O₃ with 0 ≤ x ≤ 5.0 have been synthesized. Spectroscopic (optical absorption, IR, Raman and ESR) and dielectric properties were investigated. Optical absorption and ESR spectral studies have indicated that managanese ions do exist in Mn³⁺ state in addition to Mn²⁺ state in the samples containing low concentration of Ga₂O₃. The IR and Raman studies indicated increasing degree of disorder in the glass network with the concentration of Ga₂O₃ up to 3.0 mol%. The dielectric constant, loss and ac conductivity are observed to increase with the concentration of Ga₂O₃ up to 3.0 mol%. The quantitative analysis of the results of dielectric properties has indicated an increase in the insulating strength of the glasses as the concentration of Ga₂O₃ is raised beyond 3.0 mol%. This has been attributed to adaption of gallium ions from octahedral to tetrahedral coordination.     

Perovskite phase stabilization and dielectric properties of Pb(Zn1/3Ta2/3)O3–BaTiO3 ceramics

The phase structure and dielectric properties of (1 − x)Pb(Zn_1/3Ta_2/3)O₃–xBaTiO₃ (x = 0.00–0.40) ceramics were investigated. Pure perovskite is obtained when x ≥ 0.24. With increasing BT content, the diffuse phase transition and frequency dissipation of the dielectric constant increase and the dielectric maxima temperature decreases. It is related to the existing of Ba(Zn_1/3Ta_2/3)O₃ paraelectric microregions and the incomplete solid solution reaction between Pb(Zn_1/3Ta_2/3)O₃ and BaTiO₃.     

Highly mechanical strength and thermally conductive bismaleimide–triazine composites reinforced by Al2O3@polyimide hybrid fiber

Bismaleimide–triazine (BT) resins have received a great deal of attention in microelectronics due to its excellent thermal stability and good retention of mechanical properties. Thereafter, developing BT based composites with high mechanical strength, thermal conductivity and dielectric property simultaneously are highly desirable. In this study, one hybrid fiber of Al₂O₃ nanoparticle (200 nm) supported on polyimide fiber (Al₂O₃@PI) with core–shell structure was introduced into BT resin to prepare promising Al₂O₃@PI–BT composite. The results indicated that the resultant composites possessed high Young’s modulus of 4.06 GPa, low dielectric constant (3.38–3.50, 100 kHz) and dielectric loss (0.0102–0.0107, 100 kHz). The Al₂O₃@PI hybrid film was also conductive to improve thermal stability (T_d5% up to 371 °C), in-plane thermal conductivity (increased by 295% compared to that of the pure BT resin). Furthermore, the Al₂O₃@PI–BT composite were employed to fabricate a printed circuit substrate, on which a frequency “flasher” circuit and electrical components worked well.     

Amorphous InGaZnO thin film transistors with SiO2/HfO2 double-layer gate dielectric fabricated at low temperature

Amorphous InGaZnO (a-IGZO) thin film transistors (TFTs) with double-layer gate dielectric were fabricated at low temperature and characterized. A stacked 150 nm-thick SiO₂/50 nm-thick HfO₂ dielectric layer was employed to improve the capacitance and leakage characteristics of the gate oxide. The SiO₂/HfO₂ showed a higher capacitance of 35 nF/cm² and a lower leakage current density of 4.6 nA/cm² than 200 nm-thick SiO₂. The obtained saturation mobility (μ_sat), threshold voltage (V_th), and subthreshold swing (S) of the fabricated TFTs were 18.8 cm² V^?1 s^?1, 0.88 V, and 0.48 V/decade, respectively. Furthermore, it was found that oxygen pressure during the IGZO channel layer deposition had a great influence on the performance of the TFTs.     

Preparation,characterization and dielectric properties of Ba3−xSrxM4Ti4O21 (M = Nb,Ta and 0 ≤ x ≤ 3) ceramics

Ba_3−xSr_xM₄Ti₄O₂₁ (M = Nb, Ta and 0 ≤ x ≤ 3) ceramics have been prepared through solid state ceramic route. The structure and microstructure of the compositions have been studied using powder X-ray diffraction and Scanning Electron Microscopic studies. In the present study, both Ba₃Nb₄Ti₄O₂₁ and Ba₃Ta₄Ti₄O₂₁ are obtained as single phase compositions whereas strontium rich compositions exhibit multiphase in nature. Energy dispersive X-ray analysis has been performed to identify the nature of additional phases present in the strontium rich compositions. The dielectric constant, dielectric loss and temperature variation of dielectric constant of the well sintered ceramic specimens have been studied in the low frequency region (< 13 MHz) using an impedance analyzer. The present study reveals that high dielectric compositions can be realized by Sr-substitution in the BaO–TiO₂–Nb₂O₅/Ta₂O₅ ternary systems.     

Atomic layer deposition of an HfO2 thin film using Hf(O-iPr)4

A thin film of hafnium dioxide (HfO₂) was formed on the surface of Si(100) by atomic layer deposition (ALD) using Hf(O-iPr)₄ (Hf(OCH(CH₃)₂)₄, hafnium tetrakis-iso-propoxide) as an Hf source and O₂ as an oxidant. The temperature window of the process was 250–350 °C, which is about 100 °C lower than that of a process using Hf(O-tBu)₄ as a source. This result was in accordance with the decomposition characteristics of the Hf precursor, as investigated by the temperature-programmed decomposition of the compound in an ultra-high vacuum and by thermogravimetric analysis in air. The thickness of a film deposited under the above conditions increased in proportion to the ALD cycles, indicating that the film-growth rate per cycle remained nearly constant during the process. The deposited film consisted of a monoclinic crystal phase included in an amorphous matrix, which was confirmed by X-ray diffraction. The film showed an equivalent-oxide thickness (EOT) of 2.1 nm and a leakage current density of 8.9 × 10^? 6 A/cm² at ? 1 V. The leakage current was three orders of magnitude lower than that of SiO₂ with the same EOT.     

High dielectric constant and low-loss dielectric ceramics of Ba5LnZnNb9O30 (Ln = La,Nd and Sm)

Polycrystalline Ba₅LnZnNb₉O₃₀ (Ln = La, Nd and Sm) ceramics were prepared as single-phase materials through conventional solid-state ceramics route. The structure was characterized by X-ray diffraction methods and scanning electron microscopy (SEM) and the dielectric properties were measured from − 120 °C to 150 °C. All three compounds are paraelectric phases adopting the filled tetragonal tungsten–bronze (TB) structure at room temperature, and the Curie temperature (at 1 MHz) were − 60, − 25 and − 5 °C for Ba₅LaZnNb₉O₃₀, Ba₅NdZnNb₉O₃₀, and Ba₅SmZnNb₉O₃₀ respectively. At 1 MHz their dielectric constant (ε_r) varies from 258 to 310, dielectric loss (tanδ) from 0.0033 to 0.0068, and the temperature coefficients of the dielectric constant (τ_ε) from − 1220 to − 1390 ppm °C^− 1.     

Low-temperature sintering and microwave dielectric properties of CaTi1−x(Fe0.5Nb0.5)xO3 ceramics with B2O3 addition

CaTi_1−x(Fe_0.5Nb_0.5)_xO₃ (0 ≤ x ≤ 1) dielectrics were synthesized via the solid state reaction route and structure analysis was performed together with the dielectric characterization. The substitution of Ti⁴⁺ by Fe³⁺/Nb⁵⁺ and developed phase were studied by X-ray diffraction. The dielectric constant and temperature coefficient of resonant frequency decrease rapidly with an increase of x. The influence of 1–5 wt.% B₂O₃ as a sintering additive investigated at CaTi_0.5(Fe_0.5Nb_0.5)_0.5O₃ solid solutions. The dielectric properties were found to strongly depend on the sintering conditions and contents of B₂O₃ additions. ɛ_r = 52.3, Q × f_o = 2930 GHz and T_f = 13 ppm/°C were obtained for CaTi_0.5(Fe_0.5Nb_0.5)_0.5O₃ specimen 3 wt.% B₂O₃ sintered at 900 °C for 2 h.