The fabrication of metal silicide nanodot arrays using localized ion implantation

We propose a process for fabricating nanodot arrays with a pitch size of less than 25?nm. The process consists of localized ion implantation in a metal thin film on a Si wafer using a focused ion beam (FIB), followed by chemical etching. This process utilizes the etching resistivity changes of the ion beam irradiated region that result from metal silicide formation by ion implantation. To control the nanodot diameter, a threshold ion dose model is proposed using the Gaussian distribution of the ion beam intensities. The process is verified by fabricating nanodots with various diameters. The mechanism of etching resistivity is investigated via x-ray photoelectron spectroscopy (XPS) and Auger electron spectroscopy (AES).     

Extending nanosphere lithography for the fabrication of periodic arrays of subwavelength metallic nanoholes

In this work we extend the classical nanosphere lithography method to the fabrication of subwavelength metallic nanohole arrays. By combining the reactive ion etching of self-assembled films of polystyrene nanospheres with metal deposition, ordered arrays of nanoholes of different sizes were fabricated. These structures exhibit a well-defined optical response different from that of the regular triangular array and continuous metallic film.     

Hierarchical structural nanopore arrays fabricated by pre-patterning aluminum using nanosphere lithography

A highly ordered and hierarchical structural nanopore array is fabricated via anodizing a pre-patterned aluminum foil under an optimized voltage. A pre-patterned hexagonal nanoindentation array on an aluminum substrate is prepared via the nanosphere lithography method. This pattern leads to an elaborate nanochannel structure with seven nanopores in each nanoindentation after anodization treatment. The structure achieved in our study is new, interesting, and likely to be applied in photonic devices.     

Fabrication of nano patterns on various substrates using nanosphere lithography technique

This paper presents a procedure for fabricating large-area, size-tunable, metal arrays with a periodically different shape using Nanosphere Lithography (NSL). This technique has attracted considerable interest because of its important applications as diffraction devices, chemical and optical data recording. Their ordered arrays can be used for anti-reflection surfaces, bio-sensors and nanopatterning masks. Two different types of patterns, honeycomb and hexagonal patterns, could be fabricated on various substrates with different procedures. All steps for making different patterns employed a PS (polystyrene) monolayer by spin coating. Honeycomb patterns were fabricated by spin coating a PS monolayer on a glass substrate and depositing a metal followed by removal of the monolayer, whereas the hexagonal pattern was produced by the transfer of a gold deposited monolayer onto a GaN substrate using the same process. These processes allow simple and excellent control of the size and shape of the patterns. All experimental results on structure characterization and determination of the nanoparticle metrics were accomplished by atomic force microscopy and field emission-scanning electronic microscopy.     

Non-lift-off block copolymer lithography of 25 nm magnetic nanodot arrays

Although nanolithographic techniques based on self-assembled block copolymer templates offer tremendous potential for fabrication of large-area nanostructure arrays, significant difficulties arise with both the lift-off and etch processes typically used for pattern transfer. These become progressively more important in the limit of extreme feature sizes. The few techniques that have been developed to avoid these issues are quite complex. Here, we demonstrate successful execution of a nanolithographic process based on solvent annealed, cylinder-forming, easily degradable, polystyrene-b-polylactide block copolymer films that completely avoids lift-off in addition to the most challenging aspects of etching. We report a "Damascene-type" process that overfills the polystyrene template with magnetic metal, employs ion beam milling to planarize the metal surface down to the underlying polystyrene template, then exploits the large etch rate contrast between polystyrene and typical metals to generate pattern reversal of the original template into the magnetic metal. The process is demonstrated via formation of a large-area array of 25 nm diameter ferromagnetic Ni(80)Fe(20) nanodots with hexagonally close-packed order. Extensive microscopy, magnetometry, and electrical measurements provide detailed characterization of the pattern formation. We argue that the approach is generalizable to a wide variety of materials, is scalable to smaller feature sizes, and critically, minimizes etch damage, thus preserving the essential functionality of the patterned material.     

Toward optimized light utilization in nanowire arrays using scalable nanosphere lithography and selected area growth

Vertically aligned, catalyst-free semiconducting nanowires hold great potential for photovoltaic applications, in which achieving scalable synthesis and optimized optical absorption simultaneously is critical. Here, we report combining nanosphere lithography (NSL) and selected area metal-organic chemical vapor deposition (SA-MOCVD) for the first time for scalable synthesis of vertically aligned gallium arsenide nanowire arrays, and surprisingly, we show that such nanowire arrays with patterning defects due to NSL can be as good as highly ordered nanowire arrays in terms of optical absorption and reflection. Wafer-scale patterning for nanowire synthesis was done using a polystyrene nanosphere template as a mask. Nanowires grown from substrates patterned by NSL show similar structural features to those patterned using electron beam lithography (EBL). Reflection of photons from the NSL-patterned nanowire array was used as a measure of the effect of defects present in the structure. Experimentally, we show that GaAs nanowires as short as 130 nm show reflection of <10% over the visible range of the solar spectrum. Our results indicate that a highly ordered nanowire structure is not necessary: despite the "defects" present in NSL-patterned nanowire arrays, their optical performance is similar to "defect-free" structures patterned by more costly, time-consuming EBL methods. Our scalable approach for synthesis of vertical semiconducting nanowires can have application in high-throughput and low-cost optoelectronic devices, including solar cells.     

Fabrication of magnetic nanodot arrays for patterned magnetic recording media

Fabrication processes of arrayed magnetic nanodots for the use of patterned magnetic recording media were reviewed. One candidate for the patterned media is ordered assemble of magnetic nanoparticles, and the other is patterned magnetic thin films fabricated using various micro/nano scale machining processes. For the formation of patterned masks and molds, lithography processes as well as self-organized pattern formation are utilized. For the deposition processes of magnetic dots, electrochemical deposition processes were widely used. These fabrication processes are reviewed mainly from recent reports. The recording systems for the patterned media including probe-type-recording are also overviewed.     

Ordered arrays of faceted gold nanoparticles obtained by dewetting and nanosphere lithography

Nanoparticle arrays have potential applications in many areas, such as optics and electronics. Earlier work is mostly concentrated on the synthesis of such arrays, whereas we would like to focus on the control of particle size and shape, which has a great influence on the particle properties. In this study three different types of arrays of faceted nanoparticles were synthesized; it is shown that the particle size and shape in such arrays can be modified by the annealing treatment. By taking advantage of this, a novel method for the production of lines of faceted particles was demonstrated. These structures have potential applications as plasmon waveguides.     

Color variation in periodic Ag line arrays patterned by using electron-beam lithography

Periodic Ag line arrays with different line pitches from 500 nm to 950 nm on ITO coated glass substrates have been fabricated by using electron-beam lithography (EBL) technique for studying the color light guide in a display system. The patterned Ag line array is used as a light outcoupling and color-selection component due to the emission wavelength changed by the Ag line arrays with different periodic distances that could achieve color variation. We have demonstrated that the ITO coated glass substrates containing periodic Ag line arrays with varied line pitches can be used as a color filter in a display device. This means that with a proper metallic nanostructure layer, the red, green, and blue colors in a display system can be obtained without a traditional color filter for modern multi-applications of optoelectronic display devices.     

High-resolution nanosphere lithography (NSL) to fabricate highly-ordered ZnO nanorod arrays

Here we report our successful development of a high-resolution, low-cost, simple and convenient technique based on nanosphere lithography (NSL) to fabricate large-scale periodic gold nanoparticle pattern, which is the most common catalyst material in the synthesis of nanostructure and also a feature material for surface plasmon resonation (SPR) research. In order to improve lithography resolution by PS nanosphere self-assembling monolayer (SAM), we adapted the following steps in our fabrication strategy. The original continuous etching by oxygen plasma was replaced by multiple short treatments to avoid heating effect. In addition, direct oxidation was utilized to remove the nanospheres instead of the supersonic process. Using the obtained Au nanoparticle pattern, ZnO nanorod arrays with an average diameter of 50 nm were easily obtained by 600 nm PS nanospheres SAM, which was even smaller than the minimum size by utilizing 400 nm nanospheres SAM in the previous work. Thus, we succeeded in the fabrication of highly-ordered ZnO nanorod arrays with largely tunable diameter by this higher-resolution nanosphere lithography. We also present X-ray diffraction (XRD), transmission electron microscopy (TEM), photoluminescence (PL) and Raman results of our as-grown samples, indicating great crystallization quality and optical property.     

Fabrication of polypyrrole-based nanoelectrode arrays by colloidal lithography

This paper describes a novel technique to produce polypyrrole-based nanoelectrodes for electrochemical detection purpose. The fabrication process relies on the creation of patterned nanotemplates i.e., nanometric gold spots surrounded by an electrically insulating material (SiO(x)). From these templates, polypyrrole nanopillars are grown by classical electrochemical methods. Atomic force microscopy demonstrates that polypyrrole grows selectively inside the gold nanotemplates. The electrochemical characterization by cyclic voltammetry showed a sigmoidal-shaped voltammogram characterizing the typical nanoelectrode array behavior.     

Selective filling of nanowells in nanowell arrays fabricated using polystyrene nanosphere lithography with cytochrome P450 enzymes

This work describes an original and simple technique for protein immobilization into nanowells, fabricated using nanopatterned array fabrication methods, while ensuring the protein retains normal biological activity. Nanosphere lithography was used to fabricate a nanowell array with nanowells 100?nm in diameter with a periodicity of 500?nm. The base of the nanowells was gold and the surrounding material was silicon dioxide. The different surface chemistries of these materials were used to attach two different self-assembled monolayers (SAM) with different affinities for the protein used here, cytochrome P450 (P450). The nanowell SAM, a methyl terminated thiol, had high affinity for the P450. The surrounding SAM, a polyethylene glycol silane, displayed very little affinity toward the P450 isozyme CYP2C9, as demonstrated by x-ray photoelectron spectroscopy and surface plasmon resonance. The regularity of the nanopatterned array was examined by scanning electron microscopy and atomic force microscopy. P450-mediated metabolism experiments of known substrates demonstrated that the nanowell bound P450 enzyme exceeded its normal activity, as compared to P450 solutions, when bound to the methyl terminated self-assembled monolayer. The nanopatterned array chips bearing P450 display long term stability and give reproducible results making them potentially useful for high-throughput screening assays or as nanoelectrode arrays.     

Ordered arrays of silicon nanowires produced by nanosphere lithography and molecular beam epitaxy

Because of their importance in fundamental research and possible applications in nanotechnology and nanoelectronics, semiconductor nanowires have attracted much interest. In addition to the growth itself, the control of the size and location is an essential problem. Here we show the growth of ordered arrays of vertically aligned silicon nanowires by molecular beam epitaxy using prepatterned arrays of gold droplets on Si(111) substrates. The ordered arrays of gold particles were produced by nanosphere lithography.     

Fabrication of nanoscale rings, dots, and rods by combining shadow nanosphere lithography and annealed polystyrene nanosphere masks

The application of shadow nanosphere lithography for the preparation of large-area, two-dimensional, metallic nanostructures of different shape is described. Through changing the mask morphology by temperature processing and varying the evaporation conditions, particles with morphologies such as rings, rods, and dots have been produced. This process allows outstanding control of the size and morphology of the particles. The efficient technique is shown to scale down the size of metallic nanoparticles from 200 to 30 nm, while preserving the original nanosphere spacing and order. The 150-nm-diameter Fe rings produced by this method show ferromagnetic behavior, which was predicted by theoretical simulation. All the experimental results were confirmed by computer simulations, which also showed the possibility of creating periodic arrays of any other geometrical shape.     

Synthesis of metal chalcogenide nanodot arrays using block copolymer-derived nanoreactors

Soluble metal chalcogenide precursors are used to fabricate arrays of metal chalcogenide nanodots by spin-coating. Nanodots are formed after thermal decomposition of the precursors, which are collected in patterned nanowell arrays. These arrays are derived from block copolymer patterns and may consist of the polymer itself or result from etching to transfer the pattern to an inorganic substrate. Etching provides enhanced control over nanowell shape and the morphology of the resulting metal chalcogenide array.     

Fabrication of large number density platinum nanowire arrays by size reduction lithography and nanoimprint lithography

Large number density Pt nanowires with typical dimensions of 12 microm x 20 nm x 5 nm (length x width x height) are fabricated on planar oxide supports. First sub-20 nm single crystalline silicon nanowires are fabricated by size reduction lithography, and then the Si nanowire pattern is replicated to produce a large number of Pt nanowires by nanoimprint lithography. The width and height of the Pt nanowires are uniform and are controlled with nanometer precision. The nanowire number density is 4 x 10(4) cm(-1), resulting in a Pt surface area larger than 2 cm(2) on a 5 x 5 cm(2) oxide substrate. Bimodal nanowires with different width have been generated by using a Pt shadow deposition technique. Using this technique, alternating 10 and 19 nm wide nanowires are produced.     

Polymer pen lithography using dual-elastomer tip arrays

Dual-elastomer tip arrays are developed as a simple and cost-effective approach to significantly improve the uniformity and precision of polymer pen lithography (PPL). Both experiment and mechanical simulation demonstrate that the hard-apex, soft-base tip structure of the dual-elastomer tip array leads to precise control of feature size and reduced variation among different tips over large areas through fine control of the tip deformation. The dual-elastomer tip array is believed to be readily applied to fabricate nano- and microstructures for fundamental study and applications such as bioassays, sensors, optical and electronic devices.     

Fabrication of periodic metal nanowires with microscale mold by nanoimprint lithography

In this paper, a simple method is demonstrated for fabricating periodic metal nanowires based on the unconventional nanoimprint lithography (NIL) technique. Using this method, sub-100 nm metal nanowires with the rectangular cross-section are fabricated with microscale stamp. Furthermore, the metal nanowires with different widths and heights can be generated by adjusting the imprinting parameters with the same stamp. The metal nanowires prepared with this method can be used for chemical sensing, such as ammonia sensing, and it may have applications in optical signal processing.     

Fabrication of TiO2 memristive arrays by step and flash imprint lithography

Identical patterns and characteristics of sub-100 nm TiO2-based memristive systems on 4 inch silicon substrates were demonstrated using Step and flash imprint lithography (SFIL). SFIL is a nanoimprint lithography technique that offers the advantagess of a high aspect-ratio, reliable nano-patterns, and a transparent stamp that can be used to facilitate overlay techniques. The overlay process from the alignment system in IMPRIO 100 was appropriate for the fabrication of nanoscale crossbar arrays in this study. High-density crossbar arrays that consisted of TiO2 resistive switching material that was sandwiched between Pt electrodes with a width of 80 nm and a half-pitch of 100 nm were in turn replicated through successive imprinting and etching processes. The use of the direct metal etching process enhanced the uniformity of the TiO2/Pt interface. The electrical property of the crossbar arrays showed the bipolar switching behavior that resulted in the application of the nonvolatile resistive memory.