非平衡磁控溅射类金刚石碳膜的性能

用非平衡磁控溅射的方法在室温下制备了光滑、均匀、致密的类金刚石(DLC)薄膜,分析和研究了DLC膜的形貌、结构和摩擦特性.结果表明,靶工作电流对DLC膜的沉积有重要的影响.随着工作电流的增大,薄膜的沉积速率增大,薄膜中sp3键的含量增加.薄膜的摩擦系数随着工作电流的增加略有增大,在摩擦的初始阶段,摩擦系数较高,随着摩擦循环次数的增加,摩擦系数逐渐减小,并逐渐趋于稳定.     

反应磁控溅射法沉积的氟化类金刚石薄膜的结构分析

以高纯石墨作靶、Ar／CHF3作源气体采用射频反应磁控溅射法室温下制备了氟化类金刚石薄膜(F-DLC)。发现随着射频功率的增加,F-DLC薄膜拉曼光谱的D峰与G峰强度之比ID／IG加大,薄膜中芳香环式结构比例上升。红外吸收光谱则显示射频功率增加导致薄膜中的氟含量上升．氟原子与碳原子以及芳香环的耦合加强。控制射频功率可以有效调制薄膜中的氟含量以及芳香环结构的比例,F—DLC可能成为热稳定性较好的碳氟薄膜。     

辅助气体压强比例对中频脉冲非平衡磁控溅射沉积类金刚石薄膜结构与性能的影响

以高纯石墨为靶材、氩气(Ar)和甲烷(CH4)为辅助气体,利用中频脉冲非平衡磁控溅射技术在不同气体压强比例下制备了类金刚石薄膜,采用原子力显微镜、拉曼光谱仪、傅立叶变换红外光谱仪、纳米压痕测试仪对所制备薄膜的表面形貌、微观结构、机械性能进行了分析.结果表明:当Ar气压强比例由17％增加到50％时,类金刚石薄膜的RMS表面粗糙度、sp3杂化键含量、纳米硬度、弹性模量随Ar气压强比例的增加而增加,当Ar气压强比例由50％增加到86％时,薄膜的RMS表面粗糙度、sp3杂化键含量、纳米硬度、弹性模量随Ar气压强比例的增加而减小.以上结果说明辅助气体压强比例对类金刚石薄膜的表面形貌、微观结构、机械性能有较大的影响.     

Hydrogen-free diamond-like carbon films prepared by microwave electron cyclotron resonance plasma-enhanced direct current magnetron sputtering

Hydrogen-free diamond-like carbon (DLC) films were prepared by means of microwave electron cyclotron resonance plasma enhanced direct current magnetron sputtering. To study the influence of enhanced plasma on film fabrication and properties, the structures as well as mechanical and electrical properties of these films were studied as a function of applied microwave power. Results showed that higher microwave power could induce higher plasma density and electron temperature. The hardness increased from 3.5 GPa to 13 GPa with a variation of microwave power from 0 W to 1000 W. The resistivity showed a drastic increase from 4.5 × 10⁴ Ωcm at 0 W to 1.3 × 10¹⁰ Ωcm at 1000 W. The variation of the intensity ratio I(D)/I(G) and the position of the G-peak of the DLC films with respect to changes in microwave power were also investigated by Raman spectroscopy.     

Substrate geometry effect on the uniformity of amorphous carbon films deposited by unbalanced magnetron sputtering

A chromium doped amorphous carbon (a-C) film was deposited by an unbalanced magnetron sputtering. A special designed double-V shaped stainless steel model in simulating a plastic injection mold gateway was used as the substrate to investigate the geometric effect on the uniformity of the film. It was found that, on both the side wall and bottom plane of the double-V shaped substrate, the film properties strongly depended on a geometric parameter, geometric aspect ratio, defined as the depth over width of the simulated gateway at the points under measurement. With the increase of the aspect ratio, i.e. approaching to the narrow end and/or closer to the bottom plane of the gateway, the film thickness and hardness decreased and the intensity ratio of the Raman sub-bands D over G increased. With the increase of the aspect ratio, the micro hardness of the a-C film decreased far more significantly on the side wall than that on the bottom plane. With increasing working gas pressure, the film thickness decreased consistently, and the hardness uniformity on both the side wall and bottom plane was improved. When the substrate negative bias voltage was changed from −70 to −100 V, the film uniformity (for both the thickness and hardness) was improved on the bottom plane, but degraded on the side wall.     

非平衡磁控溅射DLC薄膜应力研究

类金刚石（DLC）薄膜可用作红外增透保护膜,高的薄膜残余应力造成薄膜附着力下降是目前应用中存在的主要问题之一。本文从DLC薄膜作为红外增透保护膜的需求出发,采用非平衡磁控溅射技术生长DLC薄膜。实测了薄膜的残余应力,分析研究了薄膜残余应力在不同工艺条件下的变化情况。探讨了薄膜残余应力与薄膜厚度、光学透过率、离子能量、沉积速率以及能流密度之间的关系。研究结果表明,薄膜残余应力平衡值在0．9～2．2GPa之间,相应的单面镀膜样片的透过率在4μm波长处为69％～63％,随工艺的不同而变化。工艺优化后薄膜残余应力显著下降。硅基底上薄膜与基底剥离的力的临界值大于2160GPa．nm,最大薄膜厚度≥2400nm;锗基底上最大薄膜厚度≥2000nm,可以满足整个红外波段的需求。     

Preparation of CrN thick films by high-rate middle-frequency unbalanced magnetron sputtering

A middle-frequency (MF) unbalanced magnetron sputtering system equipped with an electron source was designed and used for deposition of CrN thick films under various MF power (1.4–14 kW) at fixed temperature, pressure, and gas flow rate. The deposition rate was increased with increasing MF power and the structure and N/Cr ratio of the deposited CrN films exhibited a complicated behavior, where the CrN films were a polycrystalline structure and the films deposited under optimized conditions exhibited a dense columnar structure and a micro-hardness of 16 GPa. The dependence of the structure and micro-hardness on MF power was interpreted by the power deposition efficiency.     

Preparation of CrN thick films by high-rate middle-frequency unbalanced magnetron sputtering

A middle-frequency (MF) unbalanced magnetron sputtering system equipped with an electron source was designed and used for deposition of CrN thick films under various MF power (1.4–14 kW) at fixed temperature, pressure, and gas flow rate. The deposition rate was increased with increasing MF power and the structure and N/Cr ratio of the deposited CrN films exhibited a complicated behavior, where the CrN films were a polycrystalline structure and the films deposited under optimized conditions exhibited a dense columnar structure and a micro-hardness of 16 GPa. The dependence of the structure and micro-hardness on MF power was interpreted by the power deposition efficiency.     

Infrared transmission properties of germanium carbon thin films deposited by reactive RF magnetron sputtering

Germanium carbon (GeC) thin films were prepared on ZnS substrates by reactive RF magnetron sputtering in Ar and CH₄ mixtures with a Ge disc as the target. H content in the films was studied as a function of the deposition parameters and low H content GeC film was obtained. RF power had a little effect on IR absorptions, hence had a little effect on H content. IR absorption of the GeC film increased a little with the increase in partial pressure of CH₄ as well as total pressure of gas mixture. Increase in substrate temperature decomposed CH₄ and CH_x in the GeC film into C and H and H was desorbed from the film, lowering the IR absorption. However, high substrate temperature prevented CH₄ or CH_x from adsorbing onto the substrate, which decreased C content in the GeC film and increased the film's refractive index. Higher annealing temperature of the GeC film reduced H content, but high annealing temperature (500 °C) caused the graphitization of the GeC film and destroyed its continuity.     

Properties of amorphous carbon films produced by magnetron sputtering

Amorphous carbon films were prepared by magnetron sputtering of a graphite target. Their electrical and optical properties obey the relationship governing the conduction mechanisms in amorphous semiconductors. Their microscopic and structural properties are characteristic of physically vapour-deposited films. A scattering of single crystals of carbon in an amorphous carbon matrix was obtained by triode sputtering of a graphite target.     

非平衡磁控溅射沉积Ta-N薄膜的结构与电学性能研究

采用直流反应非平衡磁控溅射技术在单晶Si(100)和玻璃表面沉积氮化钽(Ta-N)薄膜,分别测试了薄膜的结构、成分、电阻率和吸收光谱,研究了氮氩流量比(N2∶Ar)变化对Ta-N薄膜的结构和电学性能的影响.研究结果表明随N2∶Ar增加,依次生成六方结构的γ-Ta2N、面心立方结构(fcc)的δ-TaNx、体心四方结构(bct)的TaNx;N2∶Ar在0.2～0.8的范围内,Ta-N薄膜中只存在着fcc δ-TaNx;当N2∶Ar＞1之后,Ta-N薄膜中fcc δ-TaNx和bct TaNx共存.Ta-N薄膜电阻率随N2∶Ar流量比增加持续增加,当N2∶Ar为1.2时,薄膜变为绝缘体,光学禁带宽度为1.51eV.     

非平衡磁控溅射TiAlN薄膜的高温抗氧化性能研究

采用非平衡磁控溅射技术在硬质合金基体上制备了TiAlN薄膜.在400℃-800℃对试样进行氧化实验,利用XRD,SEM,精密电子天平等对TiAlN薄膜的物相、断口组织形貌以及氧化增重结果进行分析.实验结果发现,在800℃以下,TiAlN薄膜具有良好的抗高温氧化性.     

磁控溅射制备TiO2薄膜对医用NiTi合金弹簧圈的表面改性

采用非平衡磁控溅射法制备了3种TiO2薄膜,对医用NiTi合金弹簧圈进行了表面改性处理.运用X射线衍射(XRD)、X射线光电子能谱仪(XPS)、原子力显微镜(AFM)﹑扫描电子显微镜(SEM)等手段系统研究了薄膜的表面结构、成分、微观形貌等,同时对薄膜的接触角进行了测试.通过血小板粘附和人脐静脉内皮细胞种植试验研究和评价了薄膜的血栓形成能力和内皮化性能.结果表明,医用NiTi合金弹簧圈表面镀一定结构和性质的TiO2薄膜后,其血栓形成能力和内皮化性能得到明显提高.     

非平衡磁控溅射无氢DLC增透膜的研制

非平衡磁控溅射(UBMS)技术近年来得到了广泛地应用.采用该技术制备的类金刚石薄膜(DLC)具有许多独特的性质.本文利用正交实验方法,对非平衡磁控溅射技术制备无氢DLC膜增透膜进行了研究,得到了影响薄膜光学性能的主要因素和最佳的制备工艺.结果表明,非平衡磁控溅射制备的无氢DLC膜具有较宽的光谱透明区,锗基底单面沉积DLC膜,其峰值透射率达到61.4%,接近理论值.     

射频磁控溅射制备硼碳氮薄膜

采用射频磁控溅射技术,用六角氮化硼和石墨为溅射靶,以氩气(Ar)和氮气(N2)为工作气体,在Si (100)衬底上制备出硼碳氮薄膜.通过X射线衍射(XRD)、傅里叶红外吸收光谱(FTIR)和X射线光电子能谱(XPS)等分析手段对样品结构、组分进行了分析.结果表明,样品的组成原子之间实现了原子级化合,且薄膜为乱层石墨结构.样品中B、C、N的原子比近似为1:1:1.     

磁控溅射法镀制红外低辐射膜的研究进展

本文介绍了采用磁控溅射法在玻璃和柔性衬底上镀制红外低辐射薄膜的研究进展.根据国内外的研究现状,对薄膜的节能原理、制备方法、膜层结构及其光学、热学性能进行了综述,较详细地论述了目前低辐射薄膜研究中较为突出的金属银氧化和介质层增透的问题.     

Thermal stability of magnetron sputtering amorphous carbon nitride films

Magnetron sputtered amorphous carbon nitride films were annealed at different temperatures (450-900°C) and time (30-120 min). Compositional, bonding structural and surface morphological modifications of the films were characterized by Fourier transformation infrared spectroscopy (FTIR), X-ray photoelectron spectroscopy (XPS) and atomic force microscopy. The as-deposited film was found to have nitrogen content of 30 at%, and the carbon atoms were bonded to nitrogen atoms in the chemical structure state of CN, CN and CN bonds. The FTIR and XPS results showed that the films were thermally stable without an obvious change in the films as annealing temperature was lower than 600°C. The relative intensity ratio of CN over CN bonds reached a maximum at annealing temperature of 750°C, and then decreased gradually at annealing temperature up to 900°C. The CN bonds in the films decreased with the increase of annealing temperature and eliminated completely at annealing temperature of 900°C. These results revealed that annealing caused a substantial decrease in the number of weak bonds between carbon and nitride atoms. The CN bonds have higher thermal stability than CN bonds and CN bonds in the films. Simultaneously annealing also led to the formation of a large fraction graphitic-like carbon in the films while nitrogen escaped from the film. Besides, the surface roughness of the films increased with annealing temperature. However, when annealing time was increased from 30 to 120 min at annealing temperature of 750°C, only a slight effect of the annealing time on composition, bonding structure and the surface roughness of the films was observed.     

Preparation and antibacterial properties of Ag-containing diamond-like carbon films prepared by a combination of magnetron sputtering and plasma source ion implantation

Ag-containing diamond-like carbon (DLC) films were prepared on austenitic type stainless steel SUS316L and silicon wafer substrates by a process combining reactive magnetron sputtering with plasma source ion implantation (PSII). An Ag disc was used as a target for the sputter source with an RF power of 100 W. A mixture of the gases Ar and C₂H₂ was introduced into the discharge chamber while a negative high voltage pulse was applied to the substrate holder. By changing the gas flow ratios the resulting Ag content of the films could be varied. The prepared films were composed of amorphous carbon with crystalline Ag, as observed by X-ray diffractometry and TEM. Additional sample characterizations were performed by X-ray photoelectron spectroscopy, secondary ion mass spectrometry and Raman spectroscopy. The surface morphology was observed by scanning electron microscopy. The antibacterial activity was determined using Staphylococcus aureus bacteria. All Ag-containing diamond-like carbon films exhibited an antibacterial activity with only small variations depending on the Ag content.