共查询到20条相似文献,搜索用时 78 毫秒
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中高压铝电解电容器老练工序出现炸裂较严重是人所共知的,并且中高压电容器常常出现开路的情况。本文通过炸裂开路统计分析,找到了电容器炸裂与开路的原因,并从理论上进行了分析,提出了解决的方法。 相似文献
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导针型铝电解电容器的开路现象主要是因为裂箔、钉接不良、钉接花瓣小、正箔表面箔灰厚及原箔腐蚀太深而造成。假性短路的现象主要是跑片、抽芯、钉花毛刺、导针毛刺、铝箔边缘毛刺、芯子高低脚等原因而造成。只要加强工艺的控制、选用适当的材料可以杜绝铝电解电容器的开路和假性短路现象的发生。 相似文献
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N_2分子激光器Blumlein电路开路输出电压的研究 总被引:2,自引:0,他引:2
解回路微分方程得到了Blumlein电路开路输出电压的表示式,对W.A.Fitzsimmons等给出的Blumlein电路开路输出电压近似式以及《激光器设计基础》的表示式给以补充修正。找出了影响提高器件脉冲峰值功率的电路参数。纠正了文章《N_2分子激光器》的结论,给出了电容器转换电路开路输出电压的表示式。 相似文献
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《电子元件与材料》2002,21(4)
人们通常用平均故障间隔时间(Mean-Time-Between-Failure,简称 MTBF) 表示电子元件预期寿命的长短。用MTBF计量某一元件从正常工作到损坏或完全失去所需功能的时间,以此估计产品的寿命。 铝电解电容器的容量随使用时间的增加而缓缓减小,直到溶液枯竭,形成开路。MTBF图不能明确地反映出铝电解电容器的失效点,因而无法帮助工程师确定电容器的预期寿命。 电容器厂家一般不用MTBF,而用保证寿命时间 (Guaranteed Life Time, 简称GLT)估计电容器的寿命。例如ELNA公司的RVS系列电容器的GLT是1 000 h (精度±20%,105癈),那么… 相似文献
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涂道敏 《电子产品可靠性与环境试验》1996,(3)
1 问题的提出随着彩色电视机不断向大屏幕方向发展,显像管管径增大,偏转电流随管径的增大而增大,因此,要求S校正电容器的载流能力要增强。目前,S校正电容器主要采用CBB21S型单面金属化聚丙烯电容器,该产品能满足51cm及以下屏幕的要求,如果用于53cm以上,就会因承载的电流过大而引起发热,使电容器芯子收缩、变形、接触损耗不断增大,造成恶性循环,最后导致喷金层脱落,形成开路失效.因此,设计一种能满足大屏幕彩色电视机S校正电路中使用的S校正电容器是当务之急. 相似文献
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Hugh Adams 《电子设计技术》1999,(4)
在设计电源时,确定滤波电容器的合适电容量常常是件困难的事。多数设计人员倾向于把电容量选得较大,从而给电源设计增加了不必要的成本和体积。不过,我们可以用Microcap V程序中的步距设定功能(Spectrum Software公司的软件,下载网址:www. spectrumsoft. com)来确定各参数的大小,从而为电源设计选取最合适的滤波电容器的容量。图1示出了一个简单的18V的开路 相似文献
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Tung-Sheng Chen Balu V. Katakam S. Jian-Hung Lee Lee J.C. 《Electron Devices, IEEE Transactions on》1999,46(12):2304-2310
Excellent electrical characteristics of RF-sputtered Barium Strontium Titanate (BST) thin-film capacitors with iridium (Ir) electrodes were obtained and the influence of Ir on device properties was investigated. In contrast to conventional Pt-electroded system, BST capacitors with Ir electrodes exhibit higher polarization and slightly higher leakage current. The stronger crystallinity of a thin BST layer (~70 Å) initially grown on Ir substrate is believed to be the cause for higher charge storage density of the Ir-electroded capacitors. However, this higher polarization is accompanied by higher dielectric dispersion (3.12% per decade for Ir versus 1.98% for Pt electrodes). On the other hand, leakage current appears to be dominated by the Schottky barrier formed by Ir-BST and Pt-BST contacts, respectively, at high field. The analysis from temperature-dependent J-V data indicates a lower barrier height for the Ir-BST contact than Pt-BST contact. The slightly higher leakage current density of the BST capacitors with Ir electrodes can thus be attributed to the lower barrier height 相似文献
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In this paper, a substrate-dependent lumped-element model for ceramic multilayer capacitors is presented. The height and dielectric constant of a substrate have a significant impact on the frequency response of a chip capacitor, and these effects cannot be treated independently from the capacitor model. Rather, the equivalent-circuit parameters in the model must be made to vary in accordance with changes in the substrate. The model presented in this paper is suitable for microstrip-mounted components, and has been applied up to 10 GHz for values from 0.5 pF to 0.47 μF, and for FR-4 substrates ranging in height from 5 to 62 mil. The modeling and extraction procedure is demonstrated for 0805- and 1206-style capacitors 相似文献
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An original method is used for the quantum-mechanical modeling of n-type silicon accumulation layers. Unlike previous methods, which were only valid near 4.2 K, the approach is valid up to room temperature and beyond. The self-consistent results obtained are compared with those of the standard classical model for the accumulation layer, and the differences between them are found to be relevant for the modeling of important device applications. The dependences of the accumulation voltage drop and effective F-N (Fowler-Nordheim) barrier height on oxide electric field and substrate dopine are reported. Experimental F-N current-voltage characteristics of production-quality MOS capacitors are used to validate the quantum results and to show that the standard classical model is not adequate even if the barrier height is considered as a fitting parameter. Approximate analytical expressions giving the semiconductor voltage drop and the effective F-N barrier height as a function of oxide field and substrate doping are derived for <100> and <111> n-type silicon at 77 and 300 K 相似文献
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Gong S.S. Burnham M.E. Theodore N.D. Schroder D.K. 《Electron Devices, IEEE Transactions on》1993,40(7):1251-1257
Electrical time-to-breakdown (TTB) measurements have shown the charge to breakdown Q bd of gate oxide capacitors fabricated on n-type well (n-well) substrates always to be higher than that of capacitors on p-type well (p-well) substrates on the same wafer when both are biased into accumulation under normal test conditions. Here the authors correlate the higher n-well Q bd to smooth capacitor oxide/substrate interfaces and minimized grain boundary cusps at the poly-Si gate/oxide interfaces, confirming that Fowler-Nordheim tunneling is the dominant current conduction mechanisms through the oxide. They correlate higher Q bd to higher barrier height for a given substrate type and observe that the slope of the barrier height versus temperature plot is lower for both p-well and n-well cases with electrons tunneling from the silicon substrate. This is attributed to surface roughness at the poly-Si gate/SiO2 interface. A poly-Si gate deposition and annealing process with clean, smooth oxide/substrate interfaces will improve the p-well breakdown characteristics and allow higher Q bd to be achieved 相似文献
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Salm C. Klootwijk J.H. Ponomarev Y. Boos P.W.M. Gravesteijn D.J. Woerlee P.H. 《Electron Device Letters, IEEE》1998,19(7):213-215
Fowler-Nordheim (FN) tunnel current and oxide reliability of PRiLOS capacitors with a p+ polycrystalline silicon (poly-Si) and polycrystalline germanium-silicon (poly-Ge0.3Si0.7 ) gate on 5.6-nm thick gate oxides have been compared. It is shown that the FN current depends on the gate material and the bias polarity. The tunneling barrier heights, φB, have been determined from FN-plots. The larger barrier height for negative bias, compared to positive bias, suggests that electron injection takes place from the valence band of the gate. This barrier height for the GeSi gate is 0.4 eV lower than for the Si gate due to the higher valence band edge position. Charge-to-breakdown (Qbd) measurements show improved oxide reliability of the GeSi gate on of PMOS capacitors with 5.6 nm thick gate oxide. We confirm that workfunction engineering in deep submicron MOS technologies using poly-GeSi gates is possible without limiting effects of the gate currents and oxide reliability 相似文献
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聚丙烯高频功率电容器 总被引:4,自引:0,他引:4
介绍了用聚丙烯材料生产的高频功率电容器特性和生产工艺,并通过与云母电容器技术数据对比证实,用聚丙烯材料生产的高频电容器可部分替代云母电容器,讨论了聚丙烯高频功率电容器的设计及目前所达到的技术水平。 相似文献
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Shengyang Dong Nan Lv Yulin Wu Guoyin Zhu Xiaochen Dong 《Advanced functional materials》2021,31(21):2100455
There is a great appeal to develop an omnipotent player combining lithium-ion batteries (LIBs) with the capacitive storage communities. Hybrid capacitors as a kind of promising energy storage device are attracting increasing attention in the main playground in recent years. Unlike supercapacitors (SCs) and LIBs, hybrid capacitors combine a capacitive electrode with a Faradaic battery electrode. In these hybrid cells, the capacitive electrode brings the power while the energy mainly comes from the Faradaic one. Numerous efforts have been conducted in the past decades; however, the research about hybrid capacitors is still at its infancy stage, and it is not expected to replace LIBs or SCs in the near future utterly. Here, the advances of hybrid capacitors, including insertion-type materials, lithium-ion capacitors, and sodium-ion capacitors, are reviewed. This review aims to offer useful guidance for the design of faradic battery electrodes and hybrid cell construction. Brief challenges and opportunities for future research on hybrid capacitors are finally presented. 相似文献
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We present an analysis of microstrip coupled lines (MCLs) used to improve the stability of a 60 GHz narrowband amplifier. The circuit has a 4‐stage structure implementing MCLs instead of metal‐insulator‐metal (MIM) capacitors for the unconditional stability of the amplifier and yield enhancement. The stability parameter, U, is used to compare the stability of MCLs with that of MIM capacitors. Experimental results show that MCLs are more stable than MIM capacitors with the same capacitances as MCLs because the parasitic parallel resistances of MCLs are lower than those of MIM capacitors. Moreover, the bandwidth of an amplifier using MCLs is narrower than one using MIM capacitors because the parasitic series inductances of MCLs are higher than those of MIM capacitors. 相似文献