影响白光数码管光学性能的研究

通过分析LED封装材料中固晶胶对白光的影响,给出了不同固晶胶对白光LED光衰的效果图;通过分析荧光粉对白光LED光性能的影响,给出了用同一成分荧光粉加不同波长蓝光芯片形成的CCT/Ra关系图、同一波长蓝光芯片加不同成分荧光粉CCT/Ra关系图和蓝光芯片激发下荧光粉的相对亮度随温度的变化;通过分析配粉胶对白光LED光性能的影响,给出了不同折射率硅胶封装的白光LED光衰情况和膜清洗后不同折射率硅胶封装的白光LED光衰情况影响。从而可以依据光性能的需要,选择相应封装材料,并进行白光LED的封装设计与制造。     

Review of the properties of up-conversion phosphors for new emissive displays

In this paper, we review the properties of up-conversion (UC) materials and assess their potential for a new display technology. UC materials absorb near infrared light and re-emit in the visible. Some of their most appealing characteristics for displays are: a wide color gamut with very saturated colors, very high brightness operation without damage to the emitters, long lifetimes and efficiencies comparable to those of existing technologies. Other advantages include simplicity of fabrication, versatility of operation modes, and the potential for greatly reduced display weight and depth.     

Investigation of dynamic color deviation mechanisms of high power light-emitting diode

Environmental concerns have led to the popularity of solid stating lighting, in which a high quality white light source depends on the stable property of light emitting diode. This study examines a white-light high-power light-emitting diode composed of a blue chip and yellow phosphor. A white-light light-emitting diode can be divided into four parts—a blue chip, yellow phosphor, transparent silicone, and reflector. In a transient experiment, the wavelength shift of the blue chip markedly affects the conversion efficiency of yellow phosphor, causing white-light deviation, especially in the sharp variation region of absorption of yellow phosphor. A series of short-term experiments was conducted to identify the mechanisms of color deviation between yellow phosphor and transparent silicone. The robustness of commercial phosphor and silicone was much stronger than expected. In addition to a yellowed reflector and blue chip degradation, several combinations of degradation mechanisms between yellow phosphor and transparent silicone. In a long-term experiment, damaged silicon confines blue light resulting in warm white light. Two suggestions are provided to obtain white-light light-emitting diodes with high color reliability.     

Highly Efficient Top-Emitting Infrared-to-Visible Up-Conversion Device Enabled by Microcavity Effect

Infrared (IR)-to-visible up-conversion device allows a low-cost, pixel-free IR imaging over the conventional expensive compound semiconductor-based IR image sensors. However, the external quantum efficiency has been low due to the integration of an IR photodetector and a light-emitting diode (LED). Herein, by inducing a strong micro-cavity effect, a highly efficient top-emitting IR-to-visible up-conversion device is demonstrated where PbS quantum dots IR-absorbing layer is integrated with a phosphorescent organic LED. By optimizing the optical cavity length between indium tin oxide (ITO)/thin Ag/ITO anode and semi-transparent Mg:Ag top cathode, the up-conversion device yields 15.7% of photon-to-photon conversion efficiency from the top-emission. The high efficiency can be achieved under a low IR transmission through the semi-reflective anode. Finally, pixel-free IR imaging is demonstrated using the up-conversion device, boosting the effect of micro-cavity on the brightness and the contrast of an IR image.     

浅谈光源在投影系统中的革命

具有多色彩、高亮度以及高分辨显示效果的投影系统已经越来越多地应用于各种显示场所和监控中心。而光源是整个投影光学系统设计的前提,没有光,就没有图像被投射出来。为了解决投影系统中因光源而导致的寿命短、色彩一致性差、系统发热量大以及成本高等问题,有的系统开始采用LED光源代替传统的UHP灯泡作为投影系统中的光源。通过将UHP与LED的构造、原理和特点等进行比较,LED比UHP具有更长寿命、更丰富的色彩及省电等特点,从而得出LED光源必将在投影系统中引起一场新的革命。     

一种高亮背光组件的设计开发

文章以32英寸液晶电视为载体,设计了一款高亮LED背光组件。调研了多个厂家的LED光源,进行了大量光学测试,应用高光效的LED光源并采用膜材匹配技术,实现了背光组件的高亮显示效果,通过优化结构设计,实现了背光组件的超薄效果。本项目中LED背光组件经中国电子标准化研究所测试,过屏辉度达到517.8cd/m2,典型厚度值为10.2mm。     

ADS TFT-LCD漏光敏感性影响因素研究与改善

ADS TFT-LCD暗态受外力时存在漏光亮度高、范围大、颜色偏黄的敏感性差问题,模组极易产生漏光。本文研究了玻璃、液晶和隔垫物(PS)3方面对暗态漏光敏感性的影响。研究得出,玻璃厚度减小,可以改善按压亮度变化,例如外力30N时,0.5T玻璃的L_o亮度相比0.7T L_o亮度下降了33%;降低液晶Δnd可以改善按压发黄;相同Δnd,减小Δn,增加K,可减少LC散射,继而可减小按压亮度高和范围大问题,例如外力30N时,散射值0.027的L_o亮度相比散射值0.038的L_o亮度下降了28%;增加PS的支撑密度,可以减小按压亮度和范围的变化,例如PS密度3 168 μm~2/mm~2的L_o亮度相比PS密度2 364 μm~2/mm~2的L_o亮度下降了22%。通过以上措施,可以改善ADS产品L_o漏光敏感性。本文对敏感性改善的机理也做了相应解释。     

TFT-LCD用高亮度LED背光系统的设计

用白光LED作为TFT-LCD背光光源,在光学腔设计中,利用传统的CCFL背光系统模式,采用将点光源转变成线光源的光学设计与导光板设计合二为一的理念,在导光板上设计扩光区进行光学优化。设计了可应用于15″的TFT-LCD的LED侧式背光系统。其有效亮度可达1000cd/m2;亮度均匀性和光利用率分别达到86%和73%。     

红外上转换材料共焦光学检测器研究

提出了一种利用共焦光学结构来检测红外上转换材料被激发光的方法。采用下述步骤来提高探测灵敏度:基于红外上转换材料的光谱分布,专门设计了具有对激发外光全反射、对被激发的可见光全透射的分光反射器,用共焦光学结构有效地提高了材料的上转换效率,采用在可见光区灵敏度、在红外光区截止响应GaAsP半导体光敏器件,配合专用放大电路,实现了被激发可见光的微弱光检测。检测器能够稳定检测混合比>0.3%的红外上转换材料,给出了实验结果。     

Organic/inorganic F8T2/GaN light emitting heterojunction

An organic/inorganic white-light emitting F8T2 (9,9-dioctylfluorene-co-bithiophene)/GaN heterojunction is reported. The white-light emission is produced by hybridizing the blue light (464 nm) emitted from the GaN MQWs and the yellow/green light (500–650 nm) emitted at the F8T2/p-GaN interface by electroluminescence (EL). The yellow/green light emission in the F8T2 layer is resulted from the carrier accumulation and Frenkel excitons at the F8T2/p-GaN junction interface. It is concluded that the energy barrier and large mobility discrepancy at the F8T2/p-GaN junction interface cause carriers accumulating in the F8T2 side near the F8T2/p-GaN interface. The accumulated carriers at the F8T2/p-GaN interface form Frenkel excitons by Coulombic interaction. Then, the Frenkel excitons recombine to radiate the yellow/green emission in the F8T2 layer. The International Commission on Illumination (CIE) coordinate of the white-light emitted from the present device is at (0.28, 0.30), which is very close to the standard white light (0.33, 0.33).     

Nearly White-Light Emission From GaN-Based Light-Emitting Diodes Integrated With a Porous SiO 2 Layer

In this letter, we develop a nearly white-light-emitting device by integrating blue/green emission from a GaN-based light-emitting diode with red emission from a porous SiO₂ layer. The porous SiO ₂ layer was fabricated by a novel process procedure to create Si nanocrystals on top of the n-type GaN layer. Red light is generated from the metal-oxide-semiconductor (Ni-Au-SiO₂ oxide-n-type GaN) structure due to the electron-hole recombination in the Si nanocrystals. The device shows a blue light emission at a low biased voltage and nearly white-light emission (green and red colors) at a bias voltage between 14 and 16 V. Our results show the potential of applying such an integrated structure to white-light illumination     

Luminescence properties of light-emitting diodes based on GaAs with the up-conversion Y<Subscript>2</Subscript>O<Subscript>2</Subscript>S:Er,Yb luminophor

Y₂O₂S luminophors doped with Er³⁺ and Yb³⁺ ions are produced by means of solid-phase synthesis and deposited onto standard AL123A infrared light-emitting diodes. When excited with 940 nm radiation from a light-emitting diode, the structures exhibit intense visible up-conversion luminescence. A maximal brightness of 2340 cd/m² of green and red up-conversion luminescence at corresponding wavelengths around 550 and 600 nm is observed for the Y₂O₂S compound doped with 2 at % Er³⁺ ions and 6 at % Yb³⁺ ions. The ratio of the intensity of green (or red) up-conversion luminescence to the intensity of infrared Stokes luminescence increases with increasing applied voltage. The efficiency of visible emission of the light-emitting diode structures is η = 1.2 lm/W at an applied voltage of 1.5 V.     

高效暖白光器件的廉价制备及其相关材料研究

低色温光源由于其对抗黑变激素具有较低的抑制作用而成为生理友好照明的首选。同时,高的能量效率对于节能也至关重要。本课题采用温和的溶液旋涂方法分别制备了含互补色、三基色和四基色磷光染料的单层有机白光二极管(WOLED)。经过优化WOLED的结构,实现了宽亮度范围内100~10 000cd/m2的低色温(low-CCT)白光发射。CCT低至2 500K以下、显示指数(CRI)高达到83、电流效率在亮度为1 000cd/m2时达到了17.8cd/A,与传统的白炽灯功效相当。高发光性能、廉价制备成本及生理友好的特性表明,本工作制备的器件是益于人类健康的照明光源尤其是夜间照明光源的理想选择。     

大尺寸背光系统的倾斜LED阵列

为获得非常均匀的高亮度,建议采用倾斜LED阵列和平底反射器大型背光系统。倾斜LED重新安排优化光源的角度分布,而不必另外设计光学配置。新式背光系统比传统系统的结构更简单。作为设计范例,在22in显示屏上,LED的最佳倾角为10°,产生的均匀度高达85%,色域比商用CCFL背景灯色域宽1.3倍。     

Yb3+/Er3+共掺ZnF2粉末上转换发光特性研究

为了研究ZnF₂作为基质材料、稀土离子Yb3+和Er3+共掺摩尔分数不同时的发光性能,采用高温固相法,在820℃时制备稀土掺杂ZnF₂样品,并对各个样品进行上转换发射光谱测试。将激发功率与上转换发射功率进行曲线拟合,确定Yb3+和Er3+光子吸收过程。结果表明,在980nm半导体激光器激发下,样品在可见光区域内存在533nm,555nm和655nm 3个上转换发射峰,发射的红光强度大于绿光强度,吸收光子数目依次为1.73,1.75,1.88,确定3个发射峰均对应于双光子吸收。此研究说明稀土离子掺杂ZnF₂材料将在上转换红色荧光粉领域有重要的应用前景。     

Interference filters in optically written display based on up-conversion of near infrared light

The display based on up-conversion of near infrared light is a novel display. To improve the screen luminance and avoid leakage of infrared light, two multilayer interference filters are designed on the screen of the display. One is called the LP filter, having low transmittance for visible light between 400 and 800 nm, and high transmittance for infrared light between 800 and 1000 nm; the other is called the SP filter with opposite characteristics to those of the LP filter. Layer-symmetric films are used to design the filters and the conjugate gradient method is used to optimise the design. The LP and SP filters obtained have good characteristics within the whole wavelength bandwidth between 400 and 1000 nm and the incident angle range 0-20/spl deg/. The manufacturing tolerances on film thickness and refractive index are reasonably large.     

光纤法布里-珀罗传感器的模式分析

利用模式理论分析白光光源条件下的光纤法布里-珀罗传感器的干涉谱的相位变化,推导得到反射光波在法珀腔内传播时由光程差(即两倍法珀腔腔长)和进入导入光纤时的模式耦合引起的相位变化对干涉谱的影响,并且用模式理论的方法分析了传感器法珀腔两个端面未完全平行时对其干涉谱的影响.     

LED可调光自动控制系统设计

基于低功耗MSP430单片机的特点,提出一个用数字化恒流源来控制LED灯光可调的设计思路。在规定时间内,系统通过对背景光和人体红外信号检测,选择LED需求的亮度,单片机将输出电压数字写入D/A转换器,将D/A输出的电压作为恒流源的输入电压,间接地控制功率管的基极电压使功率管输出不同的电流,实现LED亮度数字可调,从而完成对LED光强度的智能控制。     

棉结在线检测系统中的光源选择

梳棉机棉结检测系统是基于机器视觉理论提出的一种新型在线检测系统。光源在系统中起到照明的作用,是影响棉结检出率的重要因素。为满足棉结在线检测系统宽幅面、高速和高分辨率的检测要求,需要对光源系统进行优化设计。通过实验可以获知棉网上的棉结对何种波长范围的光具有最大的反射率,以及棉结和周边结构如何获得最好的对比度。在比较了传统的荧光灯、高压汞灯和发光二极管(LED)线光源的光谱曲线后,提出了采用He-Ne激光器与光学系统配合后进行照明的光源设计方案。实测结果表明.由于激光束的高亮度和高准直性的优点,这种光源较其他光源更适合棉结检测照明的实际环境,可以满足检测需要。     

Voltage independent white emission from all solution processed polymer light-emitting diode with dual emitting layers spaced by an alcohol soluble conjugated polymer as interlayer

Spatial control of recombination zone in multilayer white polymer light emitting diode (WPLED) is highly desirable for stable white-light emission. In this work, the utilization of 18-crown-6 (Cn6)-grafted polyfluorene (PFCn6) as an interlayer in between two emitting layers is demonstrated to control the recombination zones for the multilayer WPLED with β-phase and rubrene doped poly(9,9-di-n-octylfluorene) (PFO) as blue- and yellow-emitting layers, respectively. The device gives the maximum brightness of 15,695 cd/m² and maximum efficiency 5.43 cd/A, accompanying with voltage-independent electroluminescence spectrum having invariant Commission Internationale de L’Eclairage (CIE) coordinates of (0.32, 0.36). The performance with the luminance efficiency 5.43 cd/A and voltage independent white emission is the highest record among the reported multilayer WPLED.