Electrochromic properties of heat-treated thin films of CeO2–TiO2–ZrO2 prepared by sol–gel route

CeO₂–TiO₂–ZrO₂ thin films were prepared using the sol–gel process and deposited on glass and ITO-coated glass substrates via dip-coating technique. The samples were heat treated between 100 and 500 °C. The heat treatment effects on the electrochromic performances of the films were determined by means of cyclic voltammetry measurements. The structural behavior of the film was characterized by atomic force microscopy and X-ray diffraction. Refractive index, extinction coefficient, and thickness of the films were determined in the 350–1000 nm wavelength, using nkd spectrophotometry analysis.Heat treatment temperature affects the electrochromic, optical, and structural properties of the film. The charge density of the samples increased from 8.8 to 14.8 mC/cm², with increasing heat-treatment temperatures from 100 to 500 °C. It was determined that the highest ratio between anodic and cathodic charge takes place with increase of temperature up to 500 °C.     

Carbon-doped Sb2S3 thin films: Structural, optical and electrical properties

We report the modification of electrical properties of chemical-bath-deposited antimony sulphide (Sb₂S₃) thin films by thermal diffusion of carbon. Sb₂S₃ thin films were obtained from a chemical bath containing SbCl₃ and Na₂S₂O₃ salts at room temperature (27 °C) on glass substrates. A carbon thin film was deposited on Sb₂S₃ film by arc vacuum evaporation and the Sb₂S₃-C layer was subjected to heating at 300 °C in nitrogen atmosphere or in low vacuum for 30 min. The value of resistivity of Sb₂S₃ thin films was substantially reduced from 10⁸ Ω cm for undoped condition to 10² Ω cm for doped thin films. The doped films, Sb₂S₃:C, retained the orthogonal stibnite structure and the optical band gap energy in comparison with that of undoped Sb₂S₃ thin films. By varying the carbon content (wt%) the electrical resistivity of Sb₂S₃ can be controlled in order to make it suitable for various opto-electronic applications.     

AC and dielectric properties of thermally evaporated p-type (Sb2Te3)70 (Bi2Te3)30 thin films

Thin films of (Sb₂Te₃)₇₀ (Bi₂Te₃)₃₀ were prepared by thermal evaporation. The composition of the film was confirmed by energy dispersive analysis (EDAX). X-ray diffraction studies showed that the film was polycrystalline with grain size of 4.39 Å and with a preferred orientation in the (0 1 5) directions. Al/((Sb₂Te₃)₇₀ (Bi₂Te₃)₃₀)/Al (MSM) thin film capacitors are formed and its AC and dielectric studies were carried out using a digital LCR metre at various frequencies (12 Hz–100 kHz) and temperatures (303–483 K). The dielectric constant for a film of thickness 3000 Å was found to be 86 for 1 kHz at room temperature. The temperature coefficient of capacitance (TCC) and temperature coefficient of permittivity (TCP) were estimated as 684 and 1409 ppm/K for 10 kHz at 303 K, respectively. The activation energy was estimated as 1.190 eV for frequency of 100 kHz at 303 K. The AC conductivity of the films was found to be a hopping mechanism.     

Photoelectrochemical properties of spray deposited n-ZnIn2Se4 thin films

Zinc indium selenide (ZnIn₂Se₄) thin films have been prepared by spraying a mixture of an equimolar aqueous solution of zinc sulphate (ZnSO₄), indium trichloride (InCl₃), and selenourea (CH₄N₂Se), onto preheated fluorine-doped tin oxide (FTO)-coated glass substrates at optimized conditions of substrate temperature and a solution concentration. The photoelectrochemical (PEC) cell configuration of n-ZnIn₂Se₄/1 M (NaOH+Na₂S+S)/C has been used for studying the current voltage (I–V), spectral response, and capacitance voltage (C–V) characteristics of the films. The PEC study shows that the ZnIn₂Se₄ thin films exhibited n-type conductivity. The junction quality factor in dark (n_d) and light (n_l), series and shunt resistance (R_s and R_sh), fill factor (FF) and efficiency (η) for the cell have been estimated. The measured (FF) and η of the cell are, respectively, found to be 0.435% and 1.47%.     

Sol–gel derived nanocrystalline CeO2–TiO2 coatings for electrochromic windows

Mixed CeO₂–TiO₂ coatings synthesized by sol–gel spin coating process using mixed organic–inorganic Ti(OC₃H₇)₄ and CeCl₃·7H₂O precursors with different Ce/Ti mole ratios were investigated by a wide range of characterization techniques. The attempts were directed towards achieving coatings with high transparency in the visible region and good electrochemical properties. Elucidation of the structural and optical features of the films yielded information on the aspects relevant to their usage in transmissive electrochromic devices. The films have been found to exhibit properties for counter electrode in electrochromic smart windows in which they are able to retain their transparency under charge insertion, high enough for practical uses. The high optical modulation and fastest switching for WO₃ film in the device configuration with the Ce/Ti (1:1) film is interpreted in terms of conducive microstructural changes induced by addition of TiO₂ in an amount equivalent to CeO₂.     

Photoluminescence properties of sodium incorporation in CuInSe2 and CuIn3Se5 thin films

CuInSe₂ and CuIn₃Se₅ thin films have been deposited using sodium compounds such as Na₂Se and Na₂S onto Corning 7059 glass substrates by the two-stage co-evaporation method. Enhanced grain growth and preferred (1 1 2) grain orientation as well as a decrease in resistivity with respect to undoped films were observed with sodium incorporation. A clear correlation between the photoluminescence spectra and the resistivity of the films was found by comparing the properties of films with and without Na incorporation. These observations suggest that compensation is reduced due to the suppression of donor-type defects by the presence of Na.     

TiO2 and TiO2–SiO2 thin films and powders by one-step soft-solution method: Synthesis and characterizations

Simple soft-solution method has been developed to synthesize films and powders of TiO₂ and mixed TiO₂–SiO₂ at relatively low temperatures. This method is simple and inexpensive. Furthermore, reactor can be designed for large-scale applications as well as to produce large quantities of composite powders in a single step. For the preparation of TiO₂, we used aqueous acidic medium containing TiOSO₄ and H₂O₂, which results in a peroxo-titanium precursor while colloidal SiO₂ has been added to the precursor for the formation of TiO₂–SiO₂. Post annealing at 500 °C is necessary to have anatase structure. Resulting films and powders were characterized by different techniques. TiO₂ (anatase) phase with (1 0 1) preferred orientation has been obtained. Also in TiO₂–SiO₂ mixed films and powders, TiO₂ (anatase) phase was found. Fourier transform infrared spectroscopy (FTIR) results for TiO₂ and mixed TiO₂–SiO₂ films have been presented and discussed. The method developed in this paper allowed obtaining compact and homogeneous TiO₂ films. These compact films are highly photoactive when TiO₂ is used as photo anode in an photoelectrochemical cell. Nanoporous morphology is obtained when SiO₂ colloids are added into the solution.     

Photocurrent enhancement of wide bandgap Bi2O3 by Bi2S3 over layers

Sintered Bi₂O₃ pellets exhibited insulating properties at room temperature. Partial reduction of sintered Bi₂O₃ pellets increased the conductivity. Reduced Bi₂O₃ pellets exhibited n-type semiconductor properties. Microcrystals of Bi₂S₃ were formed on sintered Bi₂O₃ pellets by sulfurizing them in H₂S atmosphere. The direct band-gap and indirect band-gap of Bi₂S₃ were evaluated as 1.2 and 0.4 eV, respectively. A high incident photon to current conversion efficiency in the near IR region was observed on Bi₂S₃|Bi₂O₃ electrodes. Photocurrent generation of Bi₂S₃|Bi₂O₃ electrodes was explained from the viewpoint of semiconductor sensitization. The flat band potential of Bi₂S₃ was evaluated as −1.1 V vs. Ag|AgCl in aqueous polysulfide redox electrolyte (1 M OH⁻, 1 M S²⁻, 10⁻² M S).     

Morphological, optical and photocatalytic properties of TiO2–Fe2O3 multilayers

Morphological, optical and photocatalytic properties of TiO₂, Fe₂O₃ and TiO₂–Fe₂O₃ samples (formed by 1, 3 and 5 coatings) were studied. The layers were deposited on glass substrate by the sol–gel method. The catalytic activity of the samples was studied by the photodecomposition of methylene blue (MB) under visible light illumination. The FTIR results indicate that all samples present surface OH radicals that are bound either to the Ti or Fe atoms. This effect is better visualized at larger number of coatings in the TiO₂–Fe₂O₃/glass systems. Also, two mechanisms are observed during the photodecomposition of the MB.     

Optical properties of sol–gel deposited Al2O3 films

Highly transparent, uniform and corrosion resistant Al₂O₃ films were prepared on stainless-steel and quartz substrates by the sol–gel process from stable coating solutions using aluminum-sec-butoxide, Al(OBu^s)₃ as precursor, acetylacetone, AcAcH as chelating agent and nitric acid, HNO₃, as catalyzer. Films up to 1000 nm thick were prepared by multiple spin coating deposition, and were characterized by X-ray diffractometry (XRD), X-ray photoelectron spectroscopy (XPS), scanning electron microscopy (SEM), thermogravimetric analysis (TGA), differential scanning calorimetry (DSC), Fourier transform infrared spectroscopy (FTIR), optical spectroscopy and micro Vickers hardness test. XRD of the film heat treated at 400°C showed that they had an amorphous structure. XPS confirmed that they were stoichiometric Al₂O₃. The refractive index (n) and extinction coefficient (k) were found to be n=1.56±0.01 and k=0.003±0.0002 at 600 nm, respectively. The surface microhardness and corrosion resistance investigations showed that Al₂O₃ films improved the surface properties of stainless-steel substrates.     

Photoelectrochemical performance of sprayed n-CdIn2Se4 photoanodes

Cadmium indium selenide thin films have been synthesized by spraying mixture of equimolar solution concentrations of cadmium chloride, indium trichloride and selenourea in aqueous media onto preheated FTO coated glass substrates at optimized substrate temperature and solution concentration. The photoelectrochemical cell configuration of n-CdIn₂Se₄/(1 M NaOH + 1 M Na₂S + 1 M S)/C has been used for investigate the current-voltage characteristics under dark and white light illumination, photovoltaic output, spectral response, photovoltaic rise and decay characteristics. It reveals the film of CdIn₂Se₄ exhibits n-type conductivity. The junction quality factor in dark (n_d) and light (n_l), series and shunt resistance (R_s and R_sh), fill factor (FF) and efficiency (η) for the cell have been estimated. Gartner’s model was used to calculate minority carrier diffusion length and donor concentration (n_D). The observed efficiency and FF of PEC solar cell is 1.95% and 0.37% respectively. Mott-Schottky plot shows the flat-band potential (V_fb) of CdIn₂Se₄ films is −0.655 V/SCE.     

A comparative study of CuInSe2 and CuIn3Se5 films using transmission electron microscopy, optical absorption and Rutherford backscattering spectrometry

CuInSe₂ and CuIn₃Se₅ films were grown by stepwise flash evaporation onto glass and Si substrates held at different temperatures. Transmission electron microscopy (TEM) studies revealed that the films grown above 370 K were polycrystalline, with CuInSe₂ films exhibiting larger average grain size than CuIn₃Se₅. Optical absorption studies yielded band gaps of 0.97±0.02 and 1.26±0.02 eV for CuInSe₂ and CuIn₃Se₅, respectively. Rutherford backscattering spectrometry (RBS) study of the films on Si showed that CuInSe₂/Si structures included an inhomogeneous interface region consisting of Cu and Si, whereas CuIn₃Se₅/Si structures presented sharp interface.     

p-Type CuSbS2 thin films by thermal diffusion of copper into Sb2S3

We report the preparation of copper antimony sulfide (CuSbS₂) thin films by heating Sb₂S₃/Cu multilayer in vacuum. Sb₂S₃ thin film was prepared from a chemical bath containing SbCl₃ and Na₂S₂O₃ salts at room temperature (27 °C) on well cleaned glass substrates. A copper thin film was deposited on Sb₂S₃ film by thermal evaporation and Sb₂S₃/Cu layers were subjected to annealing at different conditions. Structure, morphology, optical and electrical properties of the thin films formed by varying Cu layer thickness and heating conditions were analyzed using different characterization techniques. XRD analysis showed that the thin films formed at 300 and 380 °C consist of CuSbS₂ with chalcostibite structure. These thin films showed p-type conductivity and the conductivity value increased with increase in copper content. The optical band gap of CuSbS₂ was evaluated as nearly 1.5 eV.     

Enhanced electrical properties of pulsed laser-deposited CuIn0.7Ga0.3Se2 thin films via processing control

Polycrystalline CuIn_0.7Ga_0.3Se₂ thin films were prepared on soda-lime glass substrates using pulsed laser deposition (PLD) with various process parameters such as laser energy, repetition rate and substrate temperature. It was confirmed that there existed a limited laser energy, i.e. less than 300 mJ, to get phase pure CIGS thin films at room temperature. Particularly, even at room temperature, distinct crystalline CIGS phase was observed in the films. Crystallinity of the films improved with increasing substrate temperature as evidenced by the decrease of FWHM from 0.65° to 0.54°. Slightly Cu-rich surface with Cu_2−xSe phase was confirmed to exist by Raman spectra, depending on substrate temperature. Improved electrical properties, i.e., carrier concentration of ∼10¹⁸ cm⁻³ and resistivity of 10⁻¹ Ω cm at higher substrate temperature for the optimal CIGS films are assumed to be induced by the potential contributions from highly crystallized thin films, existence of Cu_2−xSe phase and diffusion of Na from substrates to films.     

Tri-layer antireflection coatings (SiO2/SiO2–TiO2/TiO2) for silicon solar cells using a sol–gel technique

Antireflection coatings (ARCs) have become one of the key issues for mass production of Si solar cells. They are generally performed by vacuum processes such as thermal evaporation, reactive sputtering, and plasma-enhanced chemical vapor deposition. In this work, a sol–gel method has been demonstrated to prepare the ARCs for the non-textured monocrystalline Si solar cells. The spin-coated TiO₂ single-layer, SiO₂/TiO₂ double-layer and SiO₂/SiO₂–TiO₂/TiO₂ triple-layer ARCs were deposited on the Si solar cells and they showed good uniformity in thickness. The measured average optical reflectance (400–1000 nm) was about 9.3, 6.2 and 3.2% for the single-layer, double-layer and triple-layer ARCs, respectively. Good correlation between theoretical and experimental data was obtained. Under a triple-layer ARC condition, a 39% improvement in the efficiency of the monocrystalline Si solar cell was achieved. These indicate that the sol–gel ARC process has high potential for low-cost solar cell fabrication.     

An investigation into effect of cationic precursor solutions on formation of CuInSe2 thin films by SILAR method

SILAR deposition of CuInSe₂ films was performed by using Cu²⁺–TEAH₃ (cupric chloride and triethanolamine) and In³⁺–CitNa (indium chloride and sodium citrate) chelating solutions with weak basic pH as well as Na₂SeSO₃ solution at 70 °C. A separate mode and a mixed one of cationic precursor solutions were adopted to investigate effects of the immersion programs on crystallization, composition and morphology of the deposited CuInSe₂ films. Chelating chemistry in two solution modes was deducted based on IR measurement. The XRD, XPS and SEM results showed that well-crystallized, smoothly and distinctly particular CuInSe₂ films could be obtained after annealing in Ar at 400 °C for 1 h by using the mixed cationic solution mode.     

Fabrication of CuInSe2 films and solar cells by the sequential evaporation of In2Se3 and Cu2Se binary compounds

Cu₂Se/In_xSe(x≈1) double layers were prepared by sequentially evaporating In₂Se₃ and Cu₂Se binary compounds at room temperature on glass or Mo-coated glass substrates and CuInSe₂ films were formed by annealing them in a Se atmosphere at 550°C in the same vacuum chamber. The In_xSe thickness was fixed at 1 μm and the Cu₂Se thickness was varied from 0.2 to 0.5 μm. The CuInSe₂ films were single phase and the compositions were Cu-rich when the Cu₂Se thickness was above 0.35 μm. And then, a thin CuIn₃Se₅ layer was formed on the top of the CuInSe₂ film by co-evaporating In₂Se₃ and Se at 550°C. When the thickness of CuIn₃Se₅ layer was about 150 nm, the CuInSe₂ cell showed the active area efficiency of 5.4% with V_oc=286 mV, J_sc=36 mA/cm² and FF=0.52. As the CuIn₃Se₅ thickness increased further, the efficiency decreased.     

Preparation of CuIn1−xGaxSe2 thin films by sputtering and selenization process

CuIn_1−xGa_xSe₂ polycrystalline thin films were prepared by a two-step method. The metal precursors were deposited either sequentially or simultaneously using Cu–Ga (23 at%) alloy and In targets by DC magnetron sputtering. The Cu–In–Ga alloy precursor was deposited on glass or on Mo/glass substrates at either room temperature or 150°C. These metallic precursors were then selenized with Se pellets in a vacuum furnace. The CuIn_1−xGa_xSe₂ films had a smooth surface morphology and a single chalcopyrite phase.     

Preparation of Cu(In,Ga)Se2 thin films from Cu–Se/In–Ga–Se precursors for high-efficiency solar cells

Improved preparation process of a device quality Cu(In,Ga)Se₂ (CIGS) thin film was proposed for production of CIGS solar cells. In–Ga–Se layer were deposited on Mo-coated soda-lime glass, and then the layer was exposed to Cu and Se fluxes to form Cu–Se/In–Ga–Se precursor film at substrate temperature of over 200°C. The precursor film was annealed in Se flux at substrate temperature of over 500°C to obtain high-quality CIGS film. The solar cell with a MgF₂/ITO/ZnO/CdS/CIGS/Mo/glass structure showed an efficiency of 17.5% (V_oc=0.634 V, J_sc=36.4 mA/cm², FF=0.756).