《基于大数据分析的代维发电管理整体解决方案》（对应的一类成果名称是基于大数据分析的代维发电管理整体解决方案）

本方案整合开发了发电调度、过程管理和发电后评估的综合管理平台,同时提出了“是否发电”、“何时发电”及“发电过程分析”等一系列算法,在充分利用历史大数据的基础上,为油机发电调度、发电稽核提出了一套创新的思路。     

Experimental characterization of electron-hole generation in silicon carbide

Thermal generation in wide bandgap semiconductors can be observed by monitoring the capacitance recovery transients of npn (or pnp) storage capacitors in which the middle layer is floating. In this article, we report a study of thermal generation in 4H and 6H silicon carbide (SiC). Three generation mechanisms are identified: bulk generation in the depletion regions of the pn junctions, surface generation at the periphery of the capacitors, and defect generation associated with imperfections in the material. All three generation mechanisms are thermally activated. Bulk generation and surface generation have activation energies of approximately half bandgap, while defect generation exhibits field-induced barrier lowering resulting in an apparent activation energy less than half bandgap. Because the generation rate is extremely low, most measurements are conducted at elevated temperatures (250-350°C). However, we also describe a long-term measurement at room temperature in which the 1/e recovery time appears to be in excess of 100 years.     

关于微光像增强器的品质因数

20世纪60年代以来,微光夜视像增强器的技术进步一直是以“代”来评价的。通常理解是一代比一代优越。20世纪,在微光夜视像增强器发展的过程中,相继出现60年代的纤维光学面板级联耦合的像增强器(第一代),70年代的微通道板像增强器(第二代)和80年代的GaAs负电子亲和势光阴极像增强器(第三代)。从事夜视技术的科学家们一直在探索新一代或第四代像增强器技术。什么是第四代,在夜视学术界是有争论的。问题在于,像增强器以代来划分,以代来评价,是否合适和全面;评价像增强器的优劣是性能还是技术;以什么表示像增强器的性能更好和更全面;这些问题引起了夜视学术界的深思。文中阐述了微光像增强器总体性能应以品质因数而不是代的概念进行评价。     

太阳能屋顶光伏发电系统设计及效益分析

太阳能发电可分为光发电和热发电两种,其中光发电是不通过热转换直接将太阳光转换成电的方式,也称为光伏发电。太阳能光伏发电是新能源利用的重要领域。文中基于实例分析了屋顶光伏发电系统的大量实际数据,表明了太阳能屋顶光伏发电系统具有良好的社会、经济效益和广阔的发展前景,为今后屋顶光伏发电系统设计和推广提供参考依据。     

一种安全实用的证书生成机制

证书是公钥体系结构（PKI）的重要组成部分,可靠的证书生成机制是实现公钥体系结构的关键。一个完善的用户密钥对生成机制和证书产生机制对于保护用户密钥的安全起着重要的作用。介绍了当前证书生成机制的缺陷,提出了一种安全实用的证书生成机制,并分析了它的安全性。     

雷达复杂信号产生技术

阐述现代雷达中复杂信号产生的几种常用方法,并根据不同方法的理论基础,总结各种复杂信号产生技术的优缺点,结合实际参数说明了各种方法所适用的信号调制形式.最后介绍近期在复杂信号产生中出现的一些新技术,并对复杂信号产生技术的发展前景进行分析.     

基于自主创新的风光互补发电实训系统设计与实现

风光互补发电系统是利用风能和太阳能资源的互补性,具有较高性价比的一种新型能源发电系统,具有很好的应用前景。本文设计了一种工业级模块化风光互补发电实训系统,包括能源模块、风光互补发电控制模块及监控模块。其中光伏发电系统采用双轴追日支架,基于PLC控制,可时刻保持光伏板正对太阳,可提高光伏发电系统发电效率30%。该实训系统既可以满足新能源装备技术专业的项目课授课需要又可以满足教师的科学研究需求。     

Specific features of recombination in layered <Emphasis Type="Italic">a</Emphasis>-Si:H films

The absorbed light spectral composition determines the type of carrier generation: interband generation or mixed generation that also includes the generation of electrons from levels of the valence-band tail. The generation type affects the value and temperature dependence of the electron recombination rate in a-Si:H layered films. This effect is caused by a variation in the occupation of the levels of silicon dangling bonds and the valence band tail with electrons upon a change in the carrier generation type. As a result, in the case of mixed carrier generation in the investigated films with a low concentration of native dangling bonds, electron recombination in the films is slow and recombination at the levels of the valence-band tail can prevail up to room temperature.     

风光互补并网发电系统的PSCAD仿真设计

针对目前单一式离网型新能源发电系统的发电不稳定性及能源溢出浪费等问题,提出了一种风电与光电相结合的互补式并网发电系统的设计理念。利用风能与太阳能二者较强的互补性,解决传统单一式发电系统昼夜间歇性供电问题。同时,该发电系统采用并网式结构,可以将溢出的多余能源回馈给电网系统,实现系统发电量的有效利用,保证供电系统的长期稳定...     

第六代导演的美学风格浅析

文章在阐述第六代导演兴起的基础上, 比较了第六代导演与第五代导演的异同点, 并着重分析了第六代导演用客观镜头语言去记录真实、展现真实的美学风格, 具有一定的参考价值。     

Investigation and modeling of interface and bulk trap generation during negative bias temperature instability of p-MOSFETs

Negative bias temperature instability is studied in thick and thin gate oxide p-MOSFETs. The relative contributions of interface- and bulk-trap generation to this device degradation mode are analyzed for a wide range of stress bias and stress temperature. The effects of gate voltage and oxide field, as well as those of inversion layer holes, impact ionized hot holes, and hot electrons on interface- and bulk-trap generation, are identified. The bulk-trap generation process is interpreted within the modified anode-hole injection model and the mechanism of interface-trap generation is modeled within the framework of the classical reaction-diffusion theory. The diffusion species for interface-trap generation is unambiguously identified. Moreover, a high-temperature, diffusion-triggered, enhanced interface-trap generation mechanism is discussed for thin gate oxide p-MOSFETs. Finally, a novel scaling methodology is proposed for interface-trap generation that helps in obtaining a simple, analytical model useful for reliability projection.     

Theoretical and practical investigation of the thermal generation in gate controlled diodes

The different components of thermal generation in a gate controlled diode are studied theoretically and experimentally. Expressions for the generation current in the space charge layer, the diffusion current from the quasi-neutral bulk and the surface generation current are derived for a gated-diode. The width of the generation zone within the space charge layer is calculated as a function of the energy level of the trap and the diode reverse voltage. This leads to a characteristic of the leakage current as a function of the space charge layer width. It is pointed out that the diffusion current can influence the leakage current and cannot be neglected in structures with a low dark current. In the second part the gate controlled diode is used to characterize the thermal generation in structures with a homogeneous and low dark current. A generation lifetime of 5.5 msec and a surface generation velocity at a depleted surface of 1.5 cm/sec is derived. The generation lifetime is found to be constant as a function of depth into the substrate. A considerable diffusion current is measured which is comparable to the generation current in the space charge layer.     

Bulk and optical generation parameters measured with the pulsed MOS capacitor

Theory and experiments are presented for the pulsed MOS capacitor when carrier generation is constant. This condition obtains when quasi-neutral bulk-region generation dominates over that in the space-charge region or when generation is due to an external excitation mechanism. It is shown how the diffusion length, surface generation velocity, and external flux can be obtained from the pulsedC-iresponse. This extends the usefulness of the pulsed MOS-C to narrow-gap semiconductors, such as germanium, as well as to optical generation measurements.     

无线物理层密钥生成技术发展及新的挑战

物理层安全技术从信息论安全理论出发,保障通信安全,是实现安全与通信一体化的关键手段,逐渐成为国内外研究热点。该文围绕无线通信物理层密钥生成技术研究,主要聚焦在物理层密钥生成技术的理论模型,机制机理和研究现状,重点对比分析了两种不同类型密钥生成算法,即源型密钥生成算法和信道型密钥生成算法的区别和联系,揭示了物理层密钥技术利用通信信道内在安全属性促进通信安全的实质。特别地,该文给出了一种可行的物理层密钥生成5G工程实现框架。最后,该文展望了物理层密钥生成技术未来可能的研究方向。     

Characterization of Generation Lifetime and Surface Generation Velocity of Semiconductor Wafers by a Contactless Zerbst Method

A contactless Zerbst method has been developed to characterize the generation lifetime and the surface generation velocity of a semiconductor wafer. This characterization is unaffected by the gate leakage current or the device fabrication process. In this study, this contactless Zerbst method was used to characterize the generation lifetime and the surface generation velocity of a partially Au-doped Si wafer. The results demonstrate that the contactless Zerbst method is a powerful technique for characterizing the generation lifetimes and the surface recombination velocities of semiconductor wafers.     

移动通信技术的发展及其演进

文章在介绍第2代、第3代移动通信应用和技术特点的基础上,分析和探讨了第2代移动通信如何向第3代过渡以及移动通信未来技术的发展等问题。     

光伏发电系统最大功率点激光定位系统

传统光伏发电系统最大功率点定位精度较差,导致光伏发电系统的功率增益较差,为此提出基于激光点跟踪定位的光伏发电系统最大功率点激光定位方法。构建光伏发电系统的电路阻抗参数分析模型,通过滤波电感和滤波电容联合参数估计的方法,进行光伏发电系统最大功率控制和潮流逆流点跟踪控制,根据控制器参数和功率变化量跟踪定位进行功率突变诱发的激光点,采用激光点扫描方法进行光伏发电系统的受控源参数分析,建立光伏发电系统的端电压分析等效模型,通过光伏并网逆变稳态控制对光伏发电系统最大功率点进行控制,通过激光点定位方法,实现光伏发电系统最大功率点激光定位系统的优化设计。仿真结果表明,采用该方法进行光伏发电系统最大功率点激光定位的精度可达99.96%,功率突变引发的电路过渡过程得到优化控制,提高了光伏发电系统的稳定性和输出增益。     

第三代移动通信系统的安全体系

透过第三代移动通信系统的UMTS的安全原则,介绍了第三代合作项目(3GPP)的安全体系结构,讨论了第二代(2G)与第三代(3G)安全体系的区别.     

第三代红外探测器的发展与选择

随着军事应用对高性能、低成本红外技术的需求,红外探测器像元数目从少于100元的一代发展到10万元中等规模的二代,到百万像素的三代,何谓第三代?在众多的材料和器件中,可作为第三代红外探测器的材料以及器件有哪些?在红外探测器技术飞速发展的今天,我们该作如何的选择?结合以上问题,对当前国际上作为第三代红外探测器选择的碲镉汞、量子阱以及Ⅱ类超晶格探测器材料、器件进行了分析,总结了第三代红外探测器的特征,为国内第三代红外探测器的发展提供选择与参考。     

Thermal carrier generation in charge-coupled devices

The build-up of thermally generated carriers in a charge-coupled device shift register is characterized by constructing a model for the generation inside a single shift-register bit. Using the model, theoretical response curves are constructed for two practical modes of operation where the contribution from the generation of carriers can be substantial. Experiments are presented which confirm all aspects of the theoretical response curves, including the presence of an initial period of reduced generation in one of the two modes. Procedures for determining generation parameters directly from observed CCD characteristics are presented and implemented. One generation parameter, the minority carrier lifetime τ, is determined by employing the CCD connected in a gate-controlled diode configuration; two others, the depleted surface generation velocity s0, and the general shape of the depletion layer, are determined utilizing a curve fitting procedure. The spatial variation in generation rates is also investigated and found to possess a distribution which is skewed positively and not Gaussian.