CGO硅钢各阶段织构遗传继承性的EBSD分析

利用EBSD技术对CGO硅钢热轧、中间退火、脱碳退火及二次再结晶退火组织及织构进行分析,研究了CGO硅钢各阶段加工制备过程中高斯{110}001晶粒的形状、尺寸及分布特点,分析了高斯取向晶粒在各工序过程中的遗传继承性特点。结果表明,CGO硅钢热轧板的次表层存在Goss取向晶粒,历经一次冷轧及中间退火后Goss取向晶粒基本消失,一次再结晶之后Goss织构仍不是主要织构,主要织构为{111}110和{111}112,说明Goss取向晶粒在二次再结晶退火前数量及尺寸上并不占优势,二次再结晶过程中Goss取向晶粒异常长大形成锋锐Goss织构。{111}110和{111}112织构组分的强度在一次冷轧中不断增加,{111}112织构组分的强度在二次冷轧后达到最大而{111}110织构组分是在初次再结晶后变强。     

Nb对低温取向硅钢高斯织构演变的影响

采用电子背散射衍射仪(EBSD)分析了Nb对取向硅钢热轧板、中间退火板、脱碳退火板及高温退火板的厚度方向晶粒尺寸、织构类型及体积分数的影响。结果表明,取向硅钢中添加Nb元素,得到纳米级NbCN与MnS与Cu_2S复合析出相,热轧板、中间退火与脱碳退火板晶粒细化。含Nb取向硅钢热轧板表层与次表层含有较高体积分数的{110}001Goss织构,热轧板中心层与脱碳退火板含有较高含量的γ纤维织构{111}112和{111}110。含Nb取向硅钢高温退火后Goss织构体积分数达到74.6%,而不含Nb取向硅钢Goss织构体积分数只有39.7%。     

Sn对含铜取向硅钢脱碳退火后的组织、织构与抑制剂的影响

采用扫描电镜、X射线衍射仪、能谱仪和透射电镜等研究了Sn对含铜取向硅钢脱碳退火后的组织、织构与抑制剂的影响.结果 表明:脱碳退火后,由于Sn元素对抑制力的增强,可使初次再结晶晶粒变得更加均匀、细小,脱碳退火板的平均晶粒直径由10 μm减小为6μ.m.试样主要织构组分相差不大,均存在较弱的α取向线织构、较强的γ取向线织构...     

热轧组织对无取向硅钢织构的影响

采用X射线衍射仪分析无取向硅钢冷轧织构和再结晶退火织构的演化,研究了热轧组织对无取向硅钢织构以及磁性能的影响.结果表明,具有均匀、粗大晶粒组织的热轧板,冷轧形成更多的剪切带,导致成品板形成高的高斯织构组分,并提高了{100}织构强度,降低了γ纤维织构,最终导致成品磁感应强度升高,铁损下降.     

50W470无取向硅钢热轧板的组织与织构演变

研究了50W470牌号无取向硅钢在热轧、正火、冷轧和退火过程中组织和织构演变。结果表明,热轧板表面为发生再结晶的细小等轴铁素体,主要织构为{110}<115>,过渡层和中心处以α纤维织构和较弱的γ纤维织构主。正火板的平均晶粒尺寸为90.5 μm,正火减弱了热轧板中对磁性能不利的γ纤维织构。冷轧板织构为强的α纤维织构和较弱的γ纤维织构。退火板的平均晶粒尺寸为74.2 μm,退火板织构主要是以{111}<112>取向为主的γ纤维织构,{100}和{110}面织构分别达到了7%和5.9%。正火50W470无取向硅钢的平均铁损P1.5/50和磁感B50分别达到了2.99 W/kg和1.725 T。     

退火温度对无取向硅钢再结晶行为的影响

使用EBSD和XRD技术研究了1.3%Si无取向硅钢在不同退火温度条件下的微观组织、宏观织构和微观取向。分析了退火温度对此成分体系无取向硅钢再结晶组织和织构的影响;讨论了退火温度与无取向硅钢成品板磁性能的关系。实验结果表明:无取向硅钢的退火温度对其再结晶组织和成品板铁损值有影响,随着退火温度的上升,再结晶晶粒平均尺寸增大且铁损值下降。γ纤维织构是再结晶织构中的优势组分,高斯{110}100织构强度也较高。退火温度对再结晶织构也有影响,随着退火温度上升,γ织构的含量不断上升,其中{111}121织构强度高于{111}110织构强度;退火温度的上升降低了立方{100}100织构和旋转立方{100}110织构但增加了高斯{110}100织构的强度,高斯织构的强度在870℃时达8.8。高斯取向晶粒主要在{111}121取向晶粒附近出现,旋转立方取向晶粒主要出现{111}110取向晶粒附近。由于{111}面织构强度增加和立方织构、旋转立方织构强度的降低,随着退火温度的上升,无取向硅钢的磁感应强度下降。     

湿H2气氛下CGO硅钢初次再结晶织构演变行为

通过对湿H2气氛下,相同退火温度、不同退火时间的CGO硅钢初次再结晶样品进行金相组织观察,并进行了EBSD微观织构分析,研究了CGO硅钢初次再结晶过程中的组织及再结晶织构演变行为。结果表明,在湿H2气氛下,820℃保温,CGO硅钢初次再结晶过程约在120 s时完成。随着退火时间的延长,γ面上{111}<112>织构含量逐渐减少,{111}<110>织构先减少后增多,随着再结晶的完成,部分{111}<112>取向晶粒向高斯{110}<001>取向转化的同时,也向{111}<110>取向转化,高斯{110}<001>织构含量逐渐增多。高斯取向晶粒较多是由{111}<112>取向晶粒转化而来,同时也证明了CGO硅钢高斯取向晶粒的二次再结晶异常长大生长机制为择优形核。     

脱碳退火保温时间对取向硅钢组织、织构及磁性能的影响

通过研究脱碳退火保温时间对取向硅钢初次再结晶组织、织构及高温退火样品磁性能的影响,探讨了有利于Goss晶粒异常长大的初次再结晶环境。结果表明,在820℃进行脱碳退火,当保温时间从2 min增加到6 min时,初次再结晶织构中Goss晶粒相对于{111}112和{111}110晶粒的尺寸优势逐渐增加,{111}110含量逐渐升高,且1/8层中Goss相对于其他取向晶粒尺寸优势稳定,使取向硅钢二次再结晶晶粒尺寸逐渐增大、磁性能逐渐提高。     

脉冲磁场热处理对CGO取向硅钢脱碳退火过程中组织和织构的影响

采用自主研发的脉冲磁场退火装置,在取向硅钢脱碳退火过程中分别施加不同强度的磁场,并采用光学显微镜和X射线衍射仪研究了脉冲磁场脱碳退火后试样的显微组织和宏观织构。结果表明,脱碳退火过程中施加脉冲磁场后取向硅钢的平均晶粒尺寸均增加,当磁场强度为40 mT时,平均晶粒尺寸最大,为13.06μm。此外,取向硅钢试样的立方织构{001}<100>强度减弱,高斯织构{110}<001>和{111}<112>织构增强,有利于获得更好的成品织构和磁性能。     

脉冲磁场热处理对CGO取向硅钢脱碳退火过程中组织和织构的影响

采用自主研发的脉冲磁场退火装置,在取向硅钢脱碳退火过程中分别施加不同强度的磁场,并采用光学显微镜和X射线衍射仪研究了脉冲磁场脱碳退火后试样的显微组织和宏观织构。结果表明,脱碳退火过程中施加脉冲磁场后取向硅钢的平均晶粒尺寸均增加,当磁场强度为40 mT时,平均晶粒尺寸最大,为13.06μm。此外,取向硅钢试样的立方织构{001}<100>强度减弱,高斯织构{110}<001>和{111}<112>织构增强,有利于获得更好的成品织构和磁性能。     

Comparison of geometries and electronic structures of polyacetylene,polyborole, polycyclopentadiene,polypyrrole, polyfuran,polysilole, polyphosphole,polythiophene, polyselenophene and polytellurophene

Geometries of monomers through hexamers of cylopentadiene, pyrrole, furan, silole, phosphole, thiophene, selenophene and tellurophene, and monomers through nonamers of borole were optimized employing density functional theory with a slightly modified B3P86 hybrid functional. Bandgaps and bandwidths were obtained by extrapolating the appropriate energy levels of trimers through hexamers (hexamers through nonamers for borole) to infinity. Bandgaps increase with increasing π-donor strengths of the heteroatom. In general, second period heteroatoms lead to larger bandgaps than their higher period analogs. Polyborole is predicted to have a very small or no energy gap between the occupied and the unoccupied π-levels. Due to its electron deficient nature polyborole differs significantly from the other polymers. It has a quinoid structure and a large electron affinity. The bandgaps of heterocycles with weak donors (CH₂, SiH₂ and PH) are close to that of polyacetylene. For polyphosphole this is due to the pyramidal geometry at the phosphorous which prevents interaction of the phosphorus lone pair with the π-system. The bandgap of polypyrrole is the largest of all polymers studied. This can be attributed to the large π-donor strength of nitrogen. Polythiophene has the third largest bandgap. The valence bandwidths differ considerably for the various polymers since the avoided crossing between the flat HOMO — 1 band and the wide HOMO band occurs at different positions. The widths of the wide HOMO bands are similar for all systems studied. All of the polymers studied have strongly delecalized π-systems.     

Acid-base behavior of cryptand 1, 4, 7, 10, 13, 16, 21, 24-octaaza-bicyclo [8, 8, 8] hexacosan-3, 8, 12, 17, 20, 25-hexone and complex formation

The bicyclic cryptand I, 4, 7, 10, 13, 16, 21,24-octaaza-bigcyclo [8, 8, 8] hexacosan-3, 8, 12, 17, 20, 25-hex-one (COBH) bearing diaminoethane groups along the eight-atom bridges was synthesized. The structure consists of discrete neutral macrobicyclic units; the two cycles share the two tertiary amine nitrogen atoms, which exhibit an endo-endo conformation. Three identical branches formed by I, 2-diaminoethane link the two tertiary amine groups. The protonation reactions ofcryptand (COBH) and its complex formation with copper (II) were investigated by potentiometry in water and in a DMSO/water (80: 20 in mass ratio) mixture as solvents. The cryptand acts as a bis-base through its two Nbridgehead and exhibits a strong cooperativity that favors the first protonation and makes the second one difficult (ΔpK≈5.0 ). An inward rotation of the amide groups to form hydrogen bonds accounts for this cooperativity. The interaction of COBH with copper (II) leads to several binuclear complex proton contents.     

Acid-base behavior of cryptand 1, 4, 7, 10, 13, 16, 21, 24-octaaza-bicycio[8, 8, 8] hexacosan-3, 8, 12, 17, 20, 25-hexone and complex formation

The bicyclic cryptand 1,4, 7, 10, 13, 16, 21, 24-octaaza-bigcyclo [8, 8, 8] hexacosan-3, 8, 12, 17, 20, 25-hexone (COBH) bearing diaminoethane groups along the eight-atom bridges was synthesized. The structure consists of discrete neutral macrobicyclic units; the two cycles share the two tertiary amine nitrogen atoms, which exhibit an endo-endo conformation. Three identical branches formed by 1, 2-diaminoethane link the two tertiary amine groups. The protonation reactions ofcryptand (COBH) and its complex formation with copper (Ⅱ) were investigated by potentiometry in water and in a DMSO/water (80: 20 in mass ratio) mixture as solvents. The cryptand acts as a bis-base through its two Nbridgehead and exhibits a strong cooperativity that favors the first protonation and makes the second one difficult (pK 5.0 ). An inward rotation of the amide groups to form hydrogen bonds accounts for this cooperativity. The interaction of COBH with copper (Ⅱ) leads to several binuclear complex proton contents.     

Supplemental Literature Review of Binary Phase Diagrams: Cs-In, Cs-K, Cs-Rb, Eu-In, Ho-Mn, K-Rb, Li-Mg, Mg-Nd, Mg-Zn, Mn-Sm, O-Sb, and Si-Sr

Recent literature on Cs-In, Cs-K, Cs-Rb, Eu-In, Ho-Mn, K-Rb, Li-Mg, Mg-Nd, Mg-Zn, Mn-Sm, O-Sb, and Si-Sr phase diagrams is reviewed in this article in order to update the 1990 compilation Binary Alloy Phase Diagrams, 2nd edition, by T.B. Massalski, et al. For some systems reaction tables and crystal structure data have been included, as well. Diagrams have been checked for consistency with rules for phase diagram construction and modified when necessary. In addition, diagrams needing more work have been identified.