Ruthenium oxide films for selective coatings

Although commercial selective surfaces are already available, investigation on different deposition methods and materials still goes on at many laboratories. In this work, ruthenium oxide films upon metallic substrates are assessed for this usage. Deposition of the films was made at room temperature by either spraying or dipping method in a ruthenium chloride alcoholic solution. After deposited on titanium substrates, the films were heat-treated at temperatures between 450 and 500 °C. When deposited on no-polished substrates, such films not only exhibit a high solar absorptance (α0.98), but also a high infrared emittance (ε0.8), which yield a low selectivity (S=α/ε=1.2). By deposition of similar films on polished substrates, absorptance decreases (α0.74), but emittance significantly decreases as well (ε0.12), resulting in a net selectivity increase (S6). On the other hand, evaporating a thin (20 nm) gold film upon the surface of a coating on a no-polished substrate also improves noticeably its emittance value (ε0.16) and a lower decrease in absorptance is achieved (α0.91), resulting in a selectivity increase (S5.7). These preliminary promising results indicate the high potential for using these films as solar selective coatings, but in order to optimize such selectivity values, further work to establish a close control on the deposition parameters and the substrate roughness value, should be done.     

Solid-state dye-sensitized photocell based on pentacene as a hole collector

A solid-state dye-sensitized photovoltaic cell consisting of vacuum deposited pentacene onto ruthenium dye-coated TiO₂ electrode doped with iodine was fabricated. Cell delivers a short-circuit current of 3.6 mA cm⁻² and an open-circuit voltage of 415 mV at 100 mW cm^–2 (1.5 air mass). The efficiency and the fill factors of the above cell are 0.8% and 0.5%, respectively. Studies of the photocurrent action spectra showed that the dye is mainly responsible for this photocurrent generation. Preliminary results under extended illumination suggested that “long term” stability of the cell is promising.     

Electrical and optical properties of highly conducting CdO:F thin film deposited by sol–gel dip coating technique

Highly conducting fluorine-doped cadmium oxide (CdO:F) thin films were deposited by sol–gel dip coating technique on glass and Si substrates. F concentration in the films was varied from 2.0% to 13.8% as determined from energy dispersive X-ray analysis. X-ray diffraction pattern showed that the films were polycrystalline in nature. The optimum F concentration for obtaining maximum conductivity was found to be 9.7%. The corresponding electrical conductivity was found to be 1.088×10⁴ S/cm and mobility 60.41 V/cm². Analysis of UV-VIS-NIR spectrum of the film with F concentration 9.7% showed a direct band gap energy of 2.3 eV.     

Dye-sensitized titania aerogels as photovoltaic electrodes for electrochemical solar cells

We describe the fabrication and performance of dye-sensitized photoanodes derived from TiO₂ aerogel. Nanocrystalline titania aerogel is a bicontinuous, nanostructured pore–solid architecture featuring specific surface areas of 85–150 m²/g and a continuous mesoporous network, allowing chemisorption of high concentrations of sensitizing dye and rapid mass-transport of electron-transfer mediators. Considerable design and processing flexibility arises with aerogels because the continuous pore–solid networks are fixed by the supercritical drying process, allowing the creation of multifunctional, nanostructured films of single or multiple layers. Titania aerogels can be processed as powders and deposited as nearly opaque films from 2 μm to >35-μm thick while retaining their bicontinuous nanoscale networks. Two-layer, 30-μm-thick TiO₂ aerogel films yield incident photon-to-electron conversion efficiency (IPCE) values of 85% in the 500–600 nm range and 52% at 700 nm with N719 as a sensitizing dye and after correcting for transmittance of the 3.2-mm-thick FTO-coated glass substrates at these wavelengths.     

The growth kinetics and optical confinement studies of porous Si for application in terrestrial Si solar cells as antireflection coating

The mesoporous porous-silicon (PS) layers were grown on 1 0 0, 1 1 0, and 1 1 1 oriented wafers at constant current density of 20 mA cm⁻². The pore sizes and surface morphologies were measured by atomic force and scanning electron microscopes. The thickness x of the PS formed and the refractive index were measured by an ellipsometer as a function of time duration t (in min) of anodization. The x vs. t data were fitted into a power law x=at^c where c is a dimensionless constant and growth kinetics was established. The growth is practically independent of orientation. This is due the reason that the growth rate is controlled largely by the availability of holes which exchange their charge with oxidizing species and desirably large concentrations of holes were available at current density of 20 mA cm⁻². For a similar reason the growth of PS layer on the front surface of the n⁺ region of n⁺–p solar cells could also be done at current density of 20 mA cm⁻² nearly at the same rate. A large concentration of holes could be injected from p region into the n⁺ region because the positive contact was made on the p side and thus the junction was forward biased. The PS ARC of thickness 70 nm showed increase 26% in the short circuit current density J_sc and 24% in efficiency of the cells. However, the improvement in the values of the open circuit voltage V_oc were lower than the expected value indicating that the PS layers had enhanced recombination of minority carriers at the front surface or in the front emitter region immediately below the PS layer.     

A note on fast protonic solid state electrochromic device: NiOx/Ta2O5/WO3−x

In the present investigation, the electrochromic properties of a fast protonic solid state device: NiO_x/Ta₂O₅/WO_3−x prepared at room temperature (300 K) is reported. The non-stoichiometric tungsten oxide thin film is prepared by reactive DC magnetron sputtering technique on ITO coated glass; the oxides of tantalum (300 nm) and nickel (100 nm) are prepared by electron beam evaporation. This proton device has a coloration efficiency of 82.4 cm²/C and coloration and bleaching time of 6 and 5 s, respectively, and a transmittance variation of 60%. The work function of WO_3−x thin films by Kelvin probe in uncolored and colored states are 4.73 and 4.30 eV, respectively.     

Miniaturization limits for single-chamber micro-solid oxide fuel cells with coplanar electrodes

Single-chamber solid oxide fuel cells with coplanar microelectrodes were operated in methane–air mixtures (R_mix = 2) at 700 °C. The performance of cells with one pair of NiO–YSZ (yttria stabilized zirconia) anode and (La_0.8Sr_0.2)_0.98MnO₃–YSZ cathode, arranged parallel on a YSZ electrolyte substrate, was found to be significantly dependent on the electrode width. For an interelectrode gap of 250 μm, cells with average electrode widths exceeding 850 μm could establish a stable open circuit voltage (OCV) of 0.8 V, while those with widths less than 550 μm could not establish any OCV. In the intermediate range, the cells exhibited significant fluctuations in voltage and power under our testing conditions. This behavior suggests that a lower limit to electrode dimensions exists for cells with single electrode pairs, below which neither a stable difference in oxygen partial pressure, nor an OCV, can be established. Conversely, increasing the electrode width imposes a penalty in the form of an increase in the cell resistance. However, both size limits can be circumvented by employing multiple pairs of microscale electrodes in an interdigitated configuration.     

p-OXA-X: A new Oligo photosensitizer for organic solar cells

A two-dimensional conjugated oligo p-phenylenevinylene-based photoactive electron donor (p-OXA-X) has been utilized for harvesting incident light and transferring electrons to generate charge carriers in PCBM-based solar cells demonstrating AM1.5 efficiencies of 0.6% and IPCE values of 27% at 400 nm. Nanoscale morphology variations induced in the photoactive layer by varied processing conditions were studied by a combination of SEM, AFM, and profilometry showing that thinner films with minimal surface roughness provided the best photovoltaic performance.     

Influence of hydrogen dilution on structural, electrical and optical properties of hydrogenated nanocrystalline silicon (nc-Si:H) thin films prepared by plasma enhanced chemical vapour deposition (PE-CVD)

Hydrogenated nanocrystalline silicon (nc-Si:H) thin films were deposited from pure silane (SiH₄) and hydrogen (H₂) gas mixture by conventional plasma enhanced chemical vapour deposition (PE-CVD) method at low temperature (200 °C) using high rf power. The structural, optical and electrical properties of these films are carefully and systematically investigated as a function of hydrogen dilution of silane (R). Characterization of these films with low angle X-ray diffraction and Raman spectroscopy revealed that the crystallite size in the films tends to decrease and at same time the volume fraction of crystallites increases with increase in R. The Fourier transform infrared (FTIR) spectroscopic analysis showed at low values of R, the hydrogen is predominantly incorporated in the nc-Si:H films in the mono-hydrogen (SiH) bonding configuration. However, with increasing R the hydrogen bonding in nc-Si:H films shifts from mono-hydrogen (SiH) to di-hydrogen (SiH₂) and (SiH₂)_n complexes. The hydrogen content in the nc-Si:H films decreases with increase in R and was found less than 10 at% over the entire studied range of R. On the other hand, the Tauc's optical band gap remains as high as 2 eV or much higher. The quantum size effect may responsible for higher band gap in nc-Si:H films. A correlation between electrical and structural properties has been found. For optimized deposition conditions, nc-Si:H films with crystallite size 7.67 nm having good degree of crystallinity (84% ) and high band gap (2.25 eV) were obtained with a low hydrogen content (6.5 at%). However, for these optimized conditions, the deposition rate was quite small (1.6 Å/s).     

Investigations of the reverse current-voltage characteristics of ITO-p CdTe heterojunction solar cells

In this paper the reverse current–voltage characteristics of a heterojunction based on spray deposited indium tin oxide (ITO) -p CdTe is presented. Particular reference is made to the study of the characteristics within the temperature intervals 120–370 K. It is established that, the reverse current–voltage characteristics have two distinct regions along the curves with the applied voltage having a strong power dependence on the reverse current at lower temperatures (I_rev U^m) . At higher temperatures however, the reverse current is directly proportional to the applied voltage (I_rev U ). Also, a possible energy band diagram to explain the current flow mechanism suggested for the reverse current in the structure is presented.     

Photon-assisted synthesis of ultra-thin yttria-doped zirconia membranes: Structure, variable temperature conductivity and micro-fuel cell devices

We report on the synthesis and functional properties of nanoscale (50 nm) dense Y-doped zirconia (YDZ) electrolyte thin films by photon-assisted oxidation of Zr–Y precursor alloy thin films. Crystalline zirconia films with grain size of 5 nm were successfully grown at room temperature by oxidation under ultra-violet (UV) photon irradiation. Microstructure of the films was characterized by transmission electron microscopy. The electrochemical conductivity of UV grown YDZ electrolytes was investigated over a broad range of temperatures using Pt electrodes as a function of yttria doping concentration. The slightly lower electrical conductivity in UV grown films at intermediate temperature range (400–550 °C) is consistent with previous reports on oxygen defect annihilation under photo-excitation. Micro-fuel cells utilizing such ultra-thin YDZ membranes yielded 12 mW cm⁻² power density at 550 °C. The results are of potential relevance in advancing low temperature ultra-thin oxide membrane synthesis for energy applications.     

Magnesium ion-conducting gel polymer electrolytes dispersed with nanosized magnesium oxide

Experimental investigations are performed on novel magnesium ion-conducting gel polymer electrolyte nanocomposites based on poly(vinylidene fluoride-co-hexafluoropropylene) (PVdF-HFP), dispersed with nanosized magnesium oxide (MgO) particles. The nanocomposite materials are in the form of free-standing films. Various physical and electrochemical analyses demonstrate promising characteristics of these films, suitable as electrolytes in rechargeable magnesium batteries. The optimized material with 3 wt.% MgO offers a maximum electrical conductivity of 8 × 10⁻³ S cm⁻¹ at room temperature (25 °C) with good thermal and electrochemical stabilities. The ion/filler–polymer interactions and possible conformational changes in host polymer PVdF-HFP due to the liquid electrolyte entrapment and dispersion of nanosized MgO are examined by Fourier transform infrared (FTIR), X-ray diffraction (XRD) and scanning electron microscopic (SEM) methods. The Mg²⁺ ion conduction in the gel film is confirmed from the cyclic voltammetry, impedance spectroscopy and transport number measurements. The Mg²⁺ ion transport number (t₊) is enhanced substantially and found to have a maximum of 0.44 for the addition of 10 wt.% MgO nanoparticles. The enhancement in t₊ is explained on the basis of the formation of space-charge regions due to the presence of MgO:Mg²⁺-like species, that supports Mg²⁺ ion motion.     

Measurements of effective optical reflectivity using a conventional flatbed scanner—Fast assessment of optical layer properties

A conventional flatbed scanner equipped with an additional diffusor is used for rapid measurements of an important figure of merit for optical surfaces, the effective reflectivity of devices such as solar cells. The application of the technique to multicrystalline silicon wafers with light-trapping structures obtained by electrochemical etching is shown. The use of this method for rapid quality control in production environments as well as in the lab is envisaged: even with a non-optimized diffusor, a spatial resolution of 0.1×0.1 mm² can be achieved, with an accuracy of the reflectivity measurements of 1% and data-acquisition times around 10 s per wafer.     

Thermoeconomic analysis of a novel zero-CO2-emission high-efficiency power cycle using LNG coldness

This paper presents a thermoeconomic analysis aimed at the optimization of a novel zero-CO₂ and other emissions and high-efficiency power and refrigeration cogeneration system, COOLCEP-S (Patent pending), which uses the liquefied natural gas (LNG) coldness during its revaporization. It was predicted that at the turbine inlet temperature (TIT) of 900 °C, the energy efficiency of the COOLCEP-S system reaches 59%. The thermoeconomic analysis determines the specific cost, the cost of electricity, the system payback period and the total net revenue. The optimization started by performing a thermodynamic sensitivity analysis, which has shown that for a fixed TIT and pressure ratio, the pinch point temperature difference in the recuperator, ΔT_p1, and that in the condenser, ΔT_p2 are the most significant unconstrained variables to have a significant effect on the thermal performance of novel cycle. The payback period of this novel cycle (with fixed net power output of 20 MW and plant life of 40 years) was 5.9 years at most, and would be reduced to 3.1 years at most when there is a market for the refrigeration byproduct. The capital investment cost of the economically optimized plant is estimated to be about 1000 $/kWe, and the cost of electricity is estimated to be 0.34–0.37 CNY/kWh (0.04 $/kWh). These values are much lower than those of conventional coal power plants being installed at this time in China, which, in contrast to COOLCEP-S, do produce CO₂ emissions at that.     

Structural, electrical and photovoltaic characterization of Si nanocrystals embedded SiC matrix and Si nanocrystals/c-Si heterojunction devices

Thin films of Si nanocrystals (Si NCs) embedded in a silicon carbide (SiC) matrix (Si-NC:SiC) were prepared by alternating deposition of Si-rich silicon carbide (Si_1−xC_x) and near-stoichiometric SiC mutilayers (Si_1−xC_x/SiC) using magnetron cosputtering followed by a post-deposition anneal. Transmission electron microscopy and Raman spectroscopy revealed that the Si NCs were clearly established, with sizes in the range of 3–5 nm. Optical studies showed an increase in the optical band gap after annealing from 1.4 eV (as-deposited) to 2.0 eV (annealed at 1100 °C). P-type Si-NC:SiC/n-type crystalline silicon (c-Si) heterojunction (HJ) devices were fabricated and their electrical and photovoltaic properties were characterized. The diode showed a good rectification ratio of 1.0×10⁴ at the bias voltage of ±1.0 V at 298 K. The diode ideality factor and junction built-in potential deduced from current–voltage and capacitance–voltage plots are 1.24 and 0.72 V, respectively. Illuminated I–V properties showed that the 1-sun open-circuit voltage, short-circuit current density and fill factor of a typical HJ solar cell were 463 mV, 19 mA/cm² and 53%, respectively. The external quantum efficiency and internal quantum efficiency showed a higher blue response than that of a conventional c-Si homojunction solar cell. Factors limiting the cell's performance are discussed.     

Highly conducting transparent nanocrystalline Cd1−xSnxS thin film synthesized by RF magnetron sputtering and studies on its optical, electrical and field emission properties

Transparent conducting Cd_1−xSn_xS thin films have been synthesized by radio frequency magnetron sputtering technique on glass and Si substrates for various tin concentrations in the films. X-ray diffraction studies showed broadening of peaks due to smaller crystal size of the Cd_1−xSn_xS films, and SEM micrographs showed fine particles with average size of 100 nm. Sn concentration in the films was varied from 0% to 12.6% as determined from energy-dispersive X-ray analysis. The room-temperature electrical conductivity was found to vary from 8.086 to 939.7 S cm⁻¹ and corresponding activation energy varied from 0.226 to 0.076 eV. The optimum Sn concentration for obtaining maximum conductivity was found to be 9.3%. The corresponding electrical conductivity was found to be 939.7 S cm⁻¹, and the mobility 49.7 cm² V⁻¹ s⁻¹. Hall measurement showed very high carrier concentrations in the films lying in the range of 8.0218×10¹⁸–1.7225×10²⁰ cm⁻³. The conducting Cd_1−xSn_xS thin films also showed good field emission properties with a turn on field 4.74–7.86 V μm⁻¹ with variation of electrode distance 60–100 μm. UV–Vis–NIR spectrophotometric studies of the films showed not needed the optical band gap energy increased from 2.62 to 2.80 eV with increase of Sn concentration in the range 0–12.6%. The optical band gap was Burstein–Moss shifted, and the corresponding carrier concentration obtained from the shift also well matched with that obtained from Hall measurement.     

Structure, morphology and electrochemical behaviour of manganese oxides prepared by controlled decomposition of permanganate

Hydrothermal decomposition of permanganate, conducted in a range of pH-controlled solutions (from strongly acidic to strongly basic), is used to prepare manganese dioxides that are well-suited for use as supercapacitor electrode materials. While permanganate is thermodynamically unstable, the kinetics of its decomposition in an aqueous environment are very slow, until the temperature is raised to 200 °C. Although the resultant materials are relatively crystalline and have low total pore volume, their prominent meso-porosity leads to good electrochemical performance. Best behaviour is obtained for material from permanganate decomposition in 0.01 M H₂SO₄ solution, for which composite electrodes (150 μm thick) yield 150 F g⁻¹ at 5 mV s⁻¹ in a 9 M KOH electrolyte.     

Effect of humidity on structure and electrochromic properties of sol–gel-derived tungsten oxide films

The influence of varying relative humidity (RH55 and 75%) during thin film deposition from an oxalato-acetylated peroxotungstic acid sol by dip coating, on the microstructure and electrochromic properties of pristine tungsten oxide (WO₃) films obtained upon annealing is presented. The films fabricated under a relative humidity of 55% are amorphous whereas the ones cast under a substantially humid atmosphere (RH75%) are characterized by interconnected nanocrystallites with a triclinic phase and a nanoporous surface morphology as well. Upon lithium insertion, larger integrated values of transmission modulation and coloration efficiency are observed over the photopic and solar regions, for the films prepared under a RH75% as compared to that observed for the films deposited under a RH of 55%. Functional improvements are due to the larger surface area of nanocrystallites and a porous microstructure, a consequence of a higher degree of hydration and hydroxylation in the former films in contrast to the non-porous and a rather featureless structure of the latter films. Faster switching kinetics between the clear and blue states, a greater current density for lithium intercalation, a higher diffusion coefficient for lithium and a superior cycling stability, again shown by the film fabricated under a 75% RH confirm that the WO₃ film microstructure is most conducive for a more facile ion insertion–extraction process, which hints at its potential for electrochromic window applications.     

Organic photovoltaic devices based on polythiophene films electrodeposited on FTO substrates

We investigated photovoltaic devices based on electrochemically deposited monolayer of neat polythiophene (PT) films onto fluorine-doped tin oxide (FTO)/glass substrates. The photo-electrical behavior of these devices, using FTO and aluminum as electrodes, presented symbatic and antibatic response. These devices presented V_oc700 mV, under monochromatic irradiation (λ=610 nm; 1 W/m²) and the Incident Photon Converted to Electron Efficiency (IPCE) around 5%, with illumination through the FTO electrode (λ=610 nm; 1 W/m²). Cyclic voltammogramms and optical measurements were used to estimate the PT HOMO and LUMO energy levels, as well to demonstrate that the potential synthesis did not produce any polymer degradation. Using the Schottky model expression in the dark current voltage characteristics it was possible to obtain the barrier height value (_b), for the interface PT/Al. The _b was quite near to the difference between the aluminum work function and the PT electronic affinity and coherent with the V_oc values.     

Microcrystallisation in Si:H: the effect of gas pressure in Ar-diluted SiH4 plasma

Using noble gas argon as a diluent of SiH₄ in RF glow discharge, undoped μc-Si:H thin films have been developed at a low power density of 30 mW/cm². It has been found that the gas pressure is a critical factor for the growth of μc-Si:H films. Undoped μc-Si:H films having σ_D10⁻⁶ S/cm and ΔE<0.57 eV have been obtained at and above a critical pressure of 0.8 Torr. When the RF power density is increased to 90 mW/cm², a more crystalline as well as highly conducting (σ_D10⁻⁴ S/cm) μc-Si:H film has been achieved at a deposition rate of 30 Å/min, which is much higher than that attained from H₂-diluted SiH₄ plasma, by conventional approach. The crystallinity of the films has been identified by the sharp Raman peak at 520 cm⁻¹ and a large number of micrograins in the TEM micrographs. The metastable state of Ar, denoted as Ar^*, plays the crucial role in inducing microcrystallisation by transferring its de-excitation energy at the surface of the growing film. A mechanism has been proposed to explain the dependence of the formation of μc-Si:H film on the working gas pressure in the plasma.