Electrodeposition of P-type BixSb2−xTey thermoelectric film from dimethyl sulfoxide solution

The electrochemical behaviors of Bi(III), Te(IV), Sb(III) and their mixtures in DMSO solutions were investigated using cyclic voltammetry and linear sweep voltammetry measurements. On this basis, Bi_xSb_2−xTe_y film thermoelectric materials were prepared by potentiodynamic electrodeposition technique from mixed DMSO solution, and the compositions, structures, morphologies as well as the thermoelectric properties of the deposited films were also analyzed. The results show that Bi_xSb_2−xTe_y compound can be prepared in a very wide potential range by potentiodynamic electrodeposition technique in the mixed DMSO solutions. After anneal treatment, the deposited film prepared in the potential range of −200 to −400 mV shows the highest Seebeck coefficient (185 μV/K), the lowest resistivity (3.34 × 10⁻⁵ Ω m), the smoothest surface, the most compact structure and processes the stoichiometry (Bi_0.49Sb_1.53Te_2.98) approaching to the Bi_0.5Sb_1.5Te₃ ideal material most. This Bi_0.49Sb_1.53Te_2.98 film is a kind of nanocrystalline material and (0 1 5) crystal plane is its preferred orientation.     

One-step electrochemical preparation of the ternary (BixSb1−x)2Te3 thin films on Au(1 1 1): Composition-dependent growth and characterization studies

This study reports on the synthesis of ternary semiconductor (Bi_xSb_1−x)₂Te₃ thin films on Au(1 1 1) using a practical electrochemical method, based on the simultaneous underpotential deposition (UPD) of Bi, Sb and Te from the same solution containing Bi³⁺, SbO⁺, and HTeO₂⁺ at a constant potential. The thin films are characterized by X-ray diffraction (XRD), atomic force microscopy (AFM), energy dispersive spectroscopy (EDS) and reflection absorption-FTIR (RA-FTIR) to determine structural, morphological, compositional and optic properties. The ternary thin films of (Bi_xSb_1−x)₂Te₃ with various compositions (0.0 ≤ x ≤ 1.0) are highly crystalline and have a kinetically preferred orientation at (0 1 5) for hexagonal crystal structure. AFM images show uniform morphology with hexagonal-shaped crystals deposited over the entire gold substrate. The structure and composition analyses reveal that the thin films are pure phase with corresponding atomic ratios. The optical studies show that the band gap of (Bi_xSb_1−x)₂Te₃ thin films could be tuned from 0.17 eV to 0.29 eV as a function of composition.     

Effect of potential on bismuth telluride thin film growth by electrochemical atomic layer epitaxy

In the present study, bismuth telluride compound thin film was grown by means of electrochemical atomic layer epitaxy (ECALE) with an automated thin layer flow cell deposition system. The dependence of the Bi and Te deposition potentials on Pt electrode was studied. Because developing a contact potential between the substrate and the growing semiconductor, the deposition potential adjustment is necessary for the first 30 or more cycles of each component. The dependence of the deposit as a function of the deposition potential adjustment slope has been investigated. The results show that an excess elemental Bi existed at a slope of −2 mV/p (p indicates per cycle), indicating that this is a lack of deposition at the potential. Single-phase Bi₂Te₃ compound could be obtained between −4 and −6 mV/p. Bi₂Te₃ and Bi₄Te₃ coexistence is observed at a slope of −10 mV/p. The EDS data indicates that the stoichiometry of compound is consistent with XRD result. SEM studies show that the deposits are inhomogeneous and have an micron sized particles morphology.     

Galvanic displacement of BixTey thin films from sacrificial iron group thin films

Bi_xTe_y thin films synthesized by galvanic displacement were systematically investigated by observing open circuit potential (OCP), surface morphology, microstructure and film composition. Surface morphologies and crystal structures of synthesized Bi_xTe_y thin films were strongly depended on the type of the sacrificial materials (i.e., nickel (Ni), cobalt (Co) and iron (Fe)). Galvanically deposited Bi_xTe_y thin films from the sacrificial Ni and Co thin films exhibited Bi₂Te₃ intermetallic compounds and hierarchical structures with backbones and sub-branches. A linear relationship of deposited Bi content in Bi_xTe_y thin films as a function of [Bi³⁺]/[HTeO₂⁺] ratio (within a range of less than 0.8) in the electrolyte was also observed. Surface morphologies of Bi_xTe_y thin films were altered with the film composition.     

Electrodeposition and characterization of Bi2Se3 thin films by electrochemical atomic layer epitaxy (ECALE)

Bismuth selenide thin films were grown on Pt substrate via the route of electrochemical atomic layer epitaxy (ECALE) in this work for the first time. The electrochemical behaviors of Bi and Se on bare Pt, Se on Bi-covered Pt, and Bi on Se-covered Pt were studied by cyclic voltammetry and coulometry. A steady deposition of Bi₂Se₃ could be attained after negatively stepped adjusting of underpotential deposition (UPD) potentials of Bi and Se on Pt in the first 40 deposition cycles. X-ray diffraction (XRD) analysis indicated that the films were single phase Bi₂Se₃ compound with orthorhombic structure, and the 2:3 stoichiometric ratio of Bi to Se was verified by EDX quantitative analysis. The optical band gap of the as-deposited Bi₂Se₃ film was determined as 0.35 eV by Fourier transform infrared spectroscopy (FTIR), which is consistent with that of bulk Bi₂Se₃ compound.     

Kinetics and PEMFC performance of RuxMoySez nanoparticles as a cathode catalyst

Kinetics of Ru_xMo_ySe_z nanoparticles dispersed on carbon powder was studied in 0.5 M H₂SO₄ electrolyte towards the oxygen reduction reaction (ORR) and as cathode catalysts for a proton exchange membrane fuel cell (PEMFC). Ru_xMo_ySe_z catalyst was synthesized by decarbonylation of transition-metal carbonyl compounds for 3 h in organic solvent. The powder was characterized by X-ray diffraction (XRD), and transmission electron microscopy (TEM) techniques. Catalyst is composed of uniform agglomerates of nanocrystalline particles with an estimated composition of Ru₆Mo₁Se₃, embedded in an amorphous phase. The electrochemical activity was studied by rotating disk electrode (RDE) and rotating ring-disk electrode (RRDE) techniques. Tafel slopes for the ORR remain invariant with temperature at −0.116 V dec⁻¹ with an increase of the charge transfer coefficient in dα/dT = 1.6 × 10⁻³, attributed to an entropy turnover contribution to the electrocatalytic reaction. The effect of temperature on the ORR kinetics was analyzed resulting in an apparent activation energy of 45.6 ± 0.5 kJ mol⁻¹. The catalyst generates less than 2.5% hydrogen peroxide during oxygen reduction. The Ru_xMo_ySe_z nanoparticles dispersed on a carbon powder were tested as cathode electrocatalyst in a single fuel cell. The membrane-electrode assembly (MEA), included Nafion^® 112 as polymer electrolyte membrane and commercial carbon supported Pt (10 wt%Pt/C-Etek) as anode catalyst. It was found that the maximum performance achieved for the electro-reduction of oxygen was with a loading of 1.0 mg cm⁻² Ru_xMo_ySe_z 20 wt%/C, arriving to a power density of 240 mW cm⁻² at 0.3 V and 80 °C.     

Electrochemically deposited thermoelectric n-type Bi2Te3 thin films

Electrochemically deposited n-type BiTe alloy thin films were grown from nitric acid baths on sputtered Bi_xTe_y/SiO/Si substrates. The film compositions, which varied from 57 to 63 at.% Te were strongly dependent on the deposition conditions. Surface morphologies varied from needle-like to granular structures depending on deposited Te content. Electrical and thermoelectric properties of these electrodeposited Bi_xTe_y thin films were measured before and after annealing and compared to those of bulk Bi₂Te₃. Annealing at 250 °C in reducing H₂ atmosphere enhanced thermoelectric properties by reducing film defects. In-plane electrical resistivity was highly dependent on composition and microstructure. In-plane Hall mobility decreased with increasing carrier concentration, while the magnitude of the Seebeck coefficient increased with increasing electrical conductivity to a maximum of −188.5 μV/K. Overall, the thermoelectric properties of electrodeposited n-type BiTe thin films after annealing were comparable to those of bulk BiTe films.     

Orientation-controlled synthesis and characterization of Bi2Te3 nanofilms, and nanowires via electrochemical co-deposition

An electrochemical deposition technique based on co-deposition was used to deposit preferentially oriented Bi₂Te₃ nanostructures (nanofilm, and nanowire). The shared underpotential deposition (UPD) potentials for both Bi and Te co-deposition were determined by cyclic voltammetric measurements. The scanning probe microscopy (scanning tunneling microscopy (STM) and atomic force microscopy (AFM)) and the X-ray diffraction (XRD) data indicated that the electrodeposition of Bi₂Te₃ results in nanofilm-structured deposits with a preferential orientation at (0 1 5) and nanowired-structured deposits with a preferential orientation at (1 1 0) in acidic and basic (in the presence of ethylenediaminetetraacetic acid (EDTA)) medium, respectively. The results show that the nucleation and growth mechanism follows 3D mode in acidic solutions and 2D mode in basic solution containing EDTA additive. The optical characterization performed by reflection absorption Fourier transform infrared (RA-FTIR) spectroscopy showed that the band gap energy of Bi₂Te₃ nanostructures depends on the thickness, size, and shape of the nanostructures and the band gap increases as the deposition time decreases. Moreover, the quantum confinement is strengthened in the wire-like deposits relative to the film-like deposits. Energy dispersive X-ray spectroscopy (EDS) analysis demonstrated that Bi₂Te₃ nanostructures were always in 2:3 stoichiometry, and they were made up of only pure Bi and Te.     

Novel mixed method for the electrochemical deposition of thick layers of Bi2+xTe3−x with controlled stoichiometry

A new method for the electrochemical deposition of Bi_2+xTe_3−x is presented, which combines voltage-controlled deposition pulses with current-controlled resting pulses. This method is based on results of a comprehensive electrochemical investigation including cyclic voltammetry, chronoamperometry and chronopotentiometry, which has been performed on the system Bi and Te on Pt in 2 M HNO₃. The influence of electrolyte composition, deposition potential and deposition pulse duration on morphology and stoichiometry of the deposited material as well as the variation of the composition over the thickness of the layer has been investigated by means of SEM and EDX. The crystal structure was examined with XRD. Layers deposited with the new method show a constant and reproducible stoichiometry over their entire thickness. Layers of up to 800 μm thickness deposited with deposition rates of up to 50 μm/h have been achieved. The composition and hence the thermoelectric behavior may be adjusted via electrolyte composition or the deposition potential. Fabrication of n-type and, for the first time, p-type Bi_2+xTe_3−x is demonstrated and verified by measurements of the Seebeck coefficients. The suitability of the proposed method for low-cost fabrication of micro-thermoelectric devices is shown. The advantages of this method may also apply for electrochemical deposition of other binary or ternary compounds.     

Oxygen reduction reaction on electrodeposited Pt100−x−yNixPdy thin films

The kinetics of the oxygen reduction reaction (ORR) were examined on a series of Pt_100−x−yNi_xPd_y ternary alloys. Films were produced by electrodeposition that involved a combination of underpotential and overpotential reactions. For Pt-rich Pt_100−x−yNi_xPd_y alloy films (x < 0.65) Ni co-deposition occurred at underpotentials while for Ni-rich films (x > 0.65) deposition proceeded at overpotentials. Rotating disk electrode (RDE) measurements of the ORR kinetics on Ni-rich Pt_100−x−yNi_xPd_y thin films revealed up to ∼6.5-fold enhancement of the catalytic activity relative to Pt films with the same Pt mass loading. More than half of the electrocatalytic gain may be attributed to surface area expansion due to Ni dealloying. Surface area normalization based on the H_upd charge reduced the enhancement factor to a value less than 2. The most active ternary alloy film for ORR was Pt₂₅Ni₇₃Pd₂. Comparison of the ORR on Pt, Pt₂₀Ni₈₀, Pt₂₅Ni₇₃Pd₂ thin films indicate that the binary alloy is the most active with a H_upd normalized ORR enhancement factor of up to 3.0 compared to 1.6 for the ternary alloy.     

Synthesis of Bi2Te3 nanopowders by vacuum arc plasma evaporation

Starting from elemental bismuth and tellurium, bismuth telluride (Bi₂Te₃) nanopowders were successfully prepared by vacuum arc plasma evaporation (VAPE) technique for the first time. The phase composition in the obtained nanopowders is closely related with the Bi:Te atomic ratio in starting precursor. The microstructure and morphology of the samples were characterized via X-ray diffraction (XRD), transmission electron microscopy (TEM) and selected area electron diffraction (SAED). Compositional analysis was also carried out by energy dispersive analysis of X-rays (EDAX). The as-synthesized Bi₂Te₃ nanopowders have a rhombohedral crystal structure with lattice parameters a = 4.381 Å and c = 30.310 Å. The average particle size is about 35 nm obtained from TEM and confirmed from XRD results.     

Electrodeposition of bismuth telluride films from a nonaqueous solvent

The author examines Bi₂Te₃ deposition from a DMSO solution containing TeCl₄ and Bi(NO₃)₃ × 5H₂O by means of cyclic voltammetry and electrochemical quartz crystal microbalance (EQCM). Accumulated charges and related mass changes for Bi₂Te₃ deposition on working electrodes are measured in situ. The deposit composition is more dependent on Te⁴⁺ concentrations in DMSO solution than on the potential. In a DMSO solution containing 0.01 M Te⁴⁺ and 0.0075 M Bi³⁺, Bi₂Te₃ deposits were obtained in the potential range between −0.2 and −0.8 V vs. Ag/AgCl. In a DMSO solution containing 0.05 M Te⁴⁺ and 0.0375 M Bi³⁺, Te-rich deposits were formed from −0.2 to −0.8 V vs. Ag/AgCl.     

Fabrication and electrical properties of Bi2-xSbxTe3 ternary nanopillars array films

Highly oriented Bi_2-xSb_xTe₃ (x?=?0, 0.7, 1.1, 1.5, 2) ternary nanocrystalline films were fabricated using vacuum thermal evaporation method. Microstructures and morphologies indicate that Bi_2-xSb_xTe₃ films have pure rhombohedral phase with well-ordered nanopillars array. Bi, Sb and Te atoms uniformly distributed throughtout films with no precipitation. Electrical conductivity of Bi_2-xSb_xTe₃ films transforms from n-type to p-type when x?>?1.1. Metal-insulator transition was observed due to the incorporation of Sb in Bi₂Te₃. Bi_2-xSb_xTe₃ film with x?=?1.5 exhibits optimized electrical properties with maximum electrical conductivity σ of 2.95?×?10⁵ S?m^?1 at T?=?300?K, which is approximately ten times higher than that of the undoped Bi₂Te₃ film, and three times higher than previous report for Bi_0.5Sb_1.5Te₃ films and bulk materials. The maximum power factor PF of Bi_0.5Sb_1.5Te₃ nanopillars array film is about 3.83?μW?cm^?1 K^?2 at T?=?475?K. Highly oriented (Bi,Sb)₂Te₃ nanocrystalline films with tuned electronic transport properties have potentials in thermoelectric devices.     

The electrochemistry of Pd-coated MgySc(1 − y) thin film electrodes: A thermodynamic and kinetic study

The thermodynamic and kinetic properties of Pd-coated Mg_ySc_(1 − y) thin film electrodes are investigated. These thin film electrodes can be described as a two-layer structure, in which the Pd and Mg_ySc_(1 − y) layer contribute to the overall electrochemical response. In order to identify the response of the Pd layer in the two-layer system, thin films consisting of solely Pd, with identical thickness and orientation, were measured. Based on the fact that the chemical potentials of the individual layers of the Pd-coated Mg_ySc_(1 − y) thin films are equal at equilibrium, the exact hydrogen concentration in each layer could be determined. It is shown that during the major part of the hydrogen extraction process of the Mg_ySc_(1 − y) thin films, the composition of the Pd topcoat is close to PdH_0.001. The kinetics of the surface reactions was investigated using electrochemical impedance spectroscopy and showed that, when cross-correlating the results of Mg_ySc_(1 − y) thin films (y = 0.65 − 0.85) and pure Pd films, the surface kinetics are completely dominated by the Pd topcoat. Additionally, it was shown that the charge transfer reaction, and not the absorption reaction is the rate-determining step. The impedance response, dominating the overall kinetic impedance at the hydrogen-depleted state, could be linked to the transfer of hydrogen across the Pd/Mg_ySc_(1 − y) interface in the two-layer thin film electrode.     

Composition-dependent characterization and optimal control of electrodeposited Bi2Te3 films for thermoelectric application

A method to control composition of Bi₂Te₃ films by mass transfer manipulation has been developed. The film composition can be varied by a diffusion-controlled method, which is related to the change of Bi³⁺/HTeO₂⁺ ratios in a controlled diffusion layer. A homogeneous and dense film with precise chemical composition could thus be obtained under constant electrode polarization. Meanwhile, the solo dependence of film properties on composition change of both Te-rich and Bi-rich films were investigated. Firstly, the studies of XRD and FE-SEM showed that different Te contents in deposit would lead to different dimensions of unit cell and grain sizes. The Seebeck coefficient increased apparently when the Te content was over 60 at.% Te. Te-rich films had higher carrier concentration but slower mobility than Bi-rich films. Inverse relations were observed between carrier concentration and carrier mobility and between Seebeck coefficient and conductivity. Therefore, an optimal power factor of 7 × 10⁻⁴ W/m K² was realized near the stoichiometric Bi₂Te₃.     

Pulsed electrodeposition of bismuth telluride films: Influence of pulse parameters over nucleation and morphology

Pulsed electrodeposition methods were applied to the preparation of bismuth telluride films. Over the potential ranges from −170 mV to −600 mV, the formation of Bi₂Te₃ nuclei proceeded through a three-dimensional instantaneous nucleation mode. The nuclei densities for several values of potential were ranged between ∼10⁶ nuclei cm⁻² and ∼10⁸ nuclei cm⁻². For a pulsed galvanostatic electroplating, the best covering percentage and a stoichiometry close to the desired Bi₂Te₃ were obtained with the parameters t_on, t_off and J_c, respectively, equal to 10 ms, 1000 ms and −100 mA cm⁻².     

Structural,magnetic and dielectric behavior of Mg1−xCaxNiyFe2−yO4 nano-ferrites synthesized by the micro-emulsion method

Ca–Ni co-substituted samples of nanocrystalline spinel ferrites with chemical formula Mg_1−xCa_xNi_yFe_2−y O₄ (x=0.0–0.6, y=0.0–1.2) were synthesized by the micro-emulsion method and were annealed at 700 °C for 7 h. The synthesized samples were characterized by x-ray diffraction (XRD), Fourier transform infrared (FTIR) spectroscopy, vibrating sample magnetometry (VSM) and dielectric measurements. The XRD and FTIR analysis reveals that single phase samples can be achieved by substituting Ca and Ni ions at Mg and Fe sites respectively in cubic spinel nano-ferrites. The crystallite size of the synthesized samples was found in the range 29–45 nm. The saturation magnetization (M_s) increases from 9.84 to 24.99 emu/g up to x=0.2, y=0.4 and then decreases, while the coercivity (H_c) increases continuously from 94 to 153 Oe with the increase in dopants concentration. The dielectric properties of these nano materials were also studied at room temperature in the frequency range 100 MHz to 3 GHz. The dielectric parameters were found to decrease with the increased Ca–Ni concentration. Further the peaking behavior was observed beyond 1.5 GHz. The frequency dependent dielectric properties of all the samples have been explained qualitatively on the basis of the Maxwell–Wagner two-layer model according to Koop's phenomenological theory. The enhanced magnetic parameters and reduced dielectric properties make the synthesized materials suitable for switching and high frequency applications, respectively.     

Amorphous LiCoO2 thin films on Li1+x+yAlxTi2−xSiyP3−yO12 prepared by radio frequency magnetron sputtering for all-solid-state Li-ion batteries

Amorphous LiCoO₂ thin films were deposited on the NASICON-type glass ceramics, Li_1+x+yAl_xTi_2−xSi_yP_3−yO₁₂ (LATSP), by radio frequency (RF) magnetron sputtering below 180 °C. The as-deposited LiCoO₂ thin films were characterized by X-ray diffraction, scanning electron microscopy and atomic force microscope. All-solid-state Li/PEO₁₈-Li (CF₃SO₂)₂N/LATSP/LiCoO₂/Au cells were fabricated using the amorphous film. The electrochemical performance of the cells was investigated by galvanostatic cycling, cyclic voltammetry, potentiostatic intermittent titration technique and electrochemical impedance spectroscopy. It was found that the amorphous LiCoO₂ thin film shows a promising electrochemical performance, making it a potential application in microbatteries for microelectronic devices.