Growth aspects of quantum dots

Recent theoretical developments on growth aspects of quantum dots, which appear during highly mismatched semiconductor epitaxy, include size distribution and lateral and vertical self organization. The stable shape of coherent islands has also recently been investigated, especially regarding the role of surface tension. Strain fields, have proved to play a very important role in these systems, and different ways of modelling the inhomogeneous strain distribution have been used successfully.     

Admittance spectroscopy of Ge quantum dots in Si

Self-assembled Ge quantum dots (QDs) embedded in Si-Schottky diodes were studied using admittance spectroscopy. A sample with one layer of Ge QDs embedded in p-Si was grown on a p⁺-substrate by molecular beam epitaxy and was processed into a Schottky diode structure. Activation energies have been determined as a function of the external bias voltage, which shifts the Fermi level in the sample. Two discrete activation energies of 318 and 303 meV have been extracted in the region of high bias voltage. They are identified as single and double charged QD ground state which is split up by a Coulomb charging energy. At approximately 40 meV lower activation energies several discrete levels attributed to excited dot states with a smaller energy separation of typical 5 meV are observed.     

Local absorption spectra of single and coupled semiconductor quantum dots

We study theoretically the local absorption spectra of single and double semiconductor quantum dots (QDs), in the linear regime. The three-dimensional confinement leads to an enhancement of the Coulomb correlations, while the spectra depend crucially on the size of the ‘local’ probe. We show that because of such Coulomb correlations the intensity of certain optical peaks as a function of the resolution can exhibit an unexpected non-monotonic behavior for spatial resolutions comparable with the excitonic Bohr radius. We finally discuss the optical near-field properties of coupled QDs for different coupling strengths.     

Growth of high purity semiconductor epitaxial layers by liquid phase epitaxy and their characterization

This paper briefly describes our work and the results on the growth of several III-V epitaxial semiconductor materials in high purity form by liquid phase epitaxy (LPE) technique. Various possible sources of impurities in such growth are listed and step-by-step procedures adopted to reduce them are discussed in particular reference to the growth of GaAs layers. The technique of growing very high purity layers by treating the melt with erbium is described for the growth of InGaAs and GaSb layers.     

Inhomogeneous effects in the quantum free electron laser

We include inhomogeneous effects in the quantum model of a free electron laser taking into account the initial energy spread of the electron beam. From a linear analysis, we obtain a generalized dispersion relation, from which the exponential gain can be explicitly calculated. We determine the maximum allowed initial energy spread in the quantum exponential regime and we discuss the limit of large energy spread.     

Piezoelectric effects in InAs/GaAs(N11) self-assembled quantum dots

The effects of a piezoelectric field on the spectroscopic properties of strained InAs/GaAs self-assembled quantum dot (QD) heterostructures grown on (N11) substrates with A or B termination are presented. An increasing blue shift of photoluminescence (PL) band was observed with increasing excitation density. The PL blue shift of (N11) quantum dots measured at the highest excitation grows with 1/N and shows an asymmetric dependence on whether the substrate has A or B termination. We attributed the blue shift of the photoluminescence band to the screening of the piezoelectric field by the photo-generated carriers, leading to a reduction of the piezoelectric induced quantum confined Stark effect.     

Polarization rotation in asymmetric semiconductor quantum dots

Rotation of input polarization arising due to the recombination of electrons from the 1s-excitonic state to the hybrid valence band states have been theoretically examined in asymmetric semiconductor quantum dots. The Jones matrix calculations suggest that the polarization rotation directly depends on the asymmetry of the quantum dot and strength of hh–lh coupling. The results advocate the suitability of quantum dots as polarizing devices.     

Linear scaling methods for electronic structure calculations and quantum molecular dynamics simulations

In the past five years, notable advances in the field of electronic structure calculations have been made, by the development of linear scaling methods for total energy calculations and quantum molecular dynamics simulations. These are methods implying a computational workload which grows linearly with th system-size,in contrast to standard algorithms where the workload scales as the cube of the system-size. Therefore the use of linear scaling methods can considerably widen the class of systems and type of problems being tackled with quantum simulations. At present, linear scaling methods using semi-empirical Hamiltonians allow one to perform simulations involving up to a thousand atoms on small workstations, and up to ten thousand atoms for tens of picoseconds when using supercomputers. This has made it possible to study problems such as large organic molecules in water, thin film growth on a surface and extended defects in semiconductors. Although the implementation of first-principles linear scaling methods is less advanced than that of semi-empirical methods, promising results regarding organic molecules and metal-alloys have already appeared in the literature.     

Supramolecular structure of S-(+)-marmesin—a linear dihydrofuranocoumarin

The title compound, C₁₄H₁₄O₄, a linear dihydrofuranocoumarin, was isolated from the bark ofAegle marmelos, a plant widely used in Ayurvedic system of medicine for the treatment of various ailments. The crystal structure was determined from X-ray diffraction data using direct methods. The compound crystallizes into monoclinic space group P2₁ with unit cell parameters:a] = 5.721(1) Å, b= 13.810(1) Å, c= 7.864(2) Å, β = 100.39(1)°, Z = 2. The structure was refined by full-matrix least-squares to a finalR value of 0.0523 for 1184 observed reflections. The benzopyran moiety is perfectly planar. The dihedral angle between the pyrone and benzene rings is 0.3(1)°. The furan ring has a 2α-envelope conformation. The molecules are linked by O-H…O hydrogen bonds into chains and these chains are linked into sheets by C-H…O hydrogen bonds. Further, the π-π stacking and C-H…π (arene) interactions link all of the sheets into a supramolecular structure.     

Optical absorption and electron spin resonance studies of Cu2+ in Li2O-Na2O-B2O3-As2O3 glasses

The local structure around Cu²⁺ ion has been examined by means of electron spin resonance and optical absorption measurements in xLi₂O-(40-x)Na₂O-50B₂O₃-10As₂O₃ glasses. The site symmetry around Cu²⁺ ions is tetragonally distorted octahedral. The ground state of Cu²⁺ isd _x ²−y ².The glass exhibited broad absorption band near infrared region and small absorption band around 548 nm, which was assigned to the ²B_1g →²E_g transition.     

Effect of heat treatment on martensitic transformation in Fe-12.5%Mn-5.5%Si-9%Cr-3.5% Ni alloy

In this study, thermally-induced martensitic transformation (γ(fcc) → ε(hcp)) in Fe-12.5%Mn-5.5% Si-9%Cr-3.5% Ni (weight) alloy was studied by scanning electron microscopy (SEM) and transmission electron microscopy (TEM). The effect of cooling rate was investigated. It was observed that fast cooled sample exhibited regular overlapping of stacking faults and ε martensite plates were formed parallel to each other. TEM investigations showed that the orientation relationship between γ-ε phases corresponds to Shoji-Nishiyama type orientation relationship.     

Interlevel optical transitions and many-body effects in a dense array of Ge/Si quantum dots

We have investigated experimentally the mid-infrared normal-incidence response of holes confined in array of Ge/Si self-assembled quantum dots. The dots have a lateral size of approximately 15 nm and a density of 3×10¹¹ cm⁻². An in-plane polarized absorption in the 70–90 meV energy range is observed and attributed to the transition between the first two states in the dots. As the hole concentration in the dot ground state is increased, the absorption peak shifts to higher energies, its linewidth is reduced, and the lineshape is changed from an asymmetric to symmetric one. We attribute all features to a depolarization-type effect caused by collective interlevel excitations.     

A new combustion route to γ-Fe2O3 synthesis

A new combustion route for the synthesis of γ-Fe ₂ O ₃ is reported by employing purified a-Fe ₂ O ₃ as a precursor in the present investigation. This synthesis which is similar to a self propagation combustion reaction, involves fewer steps, a shorter overall processing time, is a low energy reaction without the need of any explosives, and also the reaction is completed in a single step yielding magnetic iron oxide i.e. γ-Fe ₂ O ₃ .The as synthesized γ-Fe ₂ O ₃ is characterized employing thermal, XRD, SEM, magnetic hysteresis, and density measurements. The effect of ball-milling on magnetic properties is also presented.     

Significance of structure-property relationship in alumina based porcelain insulators to achieve quality

The catastrophic failures of porcelain insulators in power lines can be minimized by understanding the structure-property relationship that governs the performance. A study addressing the materials aspects has been conducted on alumina based porcelain insulators used in 25 kV railway traction lines. This article asserts the controls exercised by chemical composition, crystalline structural phases and microstructure on the functional reliability and durability of the insulators. Influences of the total alumina, α-Al₂O₃ (corundum) and α-quartz contents, microstructural features including morphologies of mullite needles, quartz and corundum grains in the alumino silicate glassy matrix, large inhomogeneities in matrix constituents and composition have been highlighted.     

Uses of α-Fe2O3 and fly ash as solid adsorbents

Solid adsorbents have shown great promise for control of particulate and non-particulate matter and as gas sensing devices in recent times. In the present study, adsorption of environmental toxic pollutant such as lead ions on solid adsorbents viz. α-Fe₂O₃ and fly ash, are reported. Considerable adsorption was observed on fly ash when compared to α-Fe₂O₃ surface. These studies are characterized by employing solid state and solution studies.     

Certified reference materials of trace elements in water

Measurement of trace elements is playing a vital role in industries and various sectors of science and technology including semiconductors, food, health and environmental sectors. In most of the cases a small error in measurement can vitiate all the measures taken for quality control and management. Many decisions regarding the suitability of material/products are based on the analysis. To reduce or eliminate the rejection rate of the products, accurate and reliable measurements are needed which can be achieved by the use of certified reference materials (CRMs). Their use in calibration of analytical equipments and validation of test methods ensures high quality in measurements and it provides traceability to the measurement data with national/international measurement systems (SI unit) also. In the present scenario of globalization of economy, use of certified reference materials (CRMs) in measurements is essential for global acceptance of products and test reports. Their use fulfil a mandatory requirement of international quality systems (ISO 9000, ISO/IEC standard 17025) including our national accreditation body, National Accreditation Board for Testing and Calibration Laboratories (NABL), World Trade Organization (WTO) etc. International manufacturers of CRMs are meeting most of the requirement of CRMs of the country. To meet the demand of CRMs indigenously, the National Physical Laboratory, India initiated a national programme on preparation and dissemination of certified reference materials.     

An X-ray diffraction study of defect parameters in a Ti-base alloy

Detailed studies based on the well established method of Fourier line shape analysis have been made on the X-ray diffraction profile of hexagonal titanium alloy of nominal composition Ti-6.58% Al-3.16% Mo-1.81% Zr-008% Fe-0.012% N-0.0078% C. While deformation fault probability, α, has been found to be quite high compared to that of pure titanium, the deformation growth fault parameter, β, shows a negative value ruling out the presence of growth fault in this alloy in the deformed state.     

Homogenization of zinc distribution in vertical Bridgman grown Cd0.96Zn0.04Te crystals

One of the most pressing issues in the growth of high quality single crystal Cd _0.96 Zn _0.04 Te material, is to achieve homogenization of the high axial variation of Zn concentration, caused by the larger than unity segregation coefficient of Zn in CdTe. This is achieved in our crystals (i) by thermal annealing of the CdZnTe crystal, which redistributes the as grown Zn distribution by solid state diffusion of Zn (this solid state diffusion of Zn occurs at three stages (a) during the growth when the solidified crystal is near to the melting point temperature, (b) during the post growth annealing of the crystal at a high temperature and (c) during the cooldown to room temperature) and (ii) by the reduction of Zn segregation during the growth stage by enhanced convective mixing of the melt, through a proper choice of ampoule and furnace dimensions. By adopting suitable growth parameters and sufficient post growth annealing it has been possible to grow Cd _0.96 Zn _0.04 Te crystals, which have nearly 75% of their fraction within 1% Zn concentration variation.     

Multi-scale modeling strategies in materials science—The quasicontinuum method

The problem of prediction of finite temperature properties of materials poses great computational challenges. The computational treatment of the multitude of length and time scales involved in determining macroscopic properties has been attempted by several workers with varying degrees of success. This paper will review the recently developed quasicontinuum method which is an attempt to bridge the length scales in a single seamless model with the aid of the finite element method. Attempts to generalize this method to finite temperatures will be outlined.     

Analytical challenges in characterization of high purity materials

Available analytical literature reveals that it is possible to identify a lot of procedures to carry out any determination using a plethora of analytical techniques. The fundamental analytical requirements for realizing the desired and acceptable information from a chemical analysis are representative nature of the sample, precision, accuracy, selectivity and sensitivity. These decide, to a larger extent, the selection of the most appropriate methodology in order to obtain chemical information from a system. A number of analytical methodologies are being used in the author’s laboratory for carrying out trace elemental analysis as a part of chemical quality control. Quite a good number of analytical challenges with specific reference to the characterization of high purity materials of relevance to nuclear technology were addressed and methodologies were developed for trace elemental analysis of both metallic and non-metallic constituents. A brief review of these analytical challenges and the analytical methodologies developed and also the future needs of analytical chemist are presented in this paper.