磁控溅射Ni/Au/Pt多层膜红外发射率特征研究

研究了表面镀Ni/Au/Pt多层膜的K424合金在热处理前后红外发射率的变化及变化机理。XRD分析结果表明,在热处理后,试样表面主要由 Au0.7Cr0.3和Pt组成,说明合金基体元素在600 ℃下会向外扩散。SEM分析表明,粗糙表面镀金膜的试样在热处理后,表面薄膜产生了细小的裂痕,但在表面没有探测到氧化物。而抛光表面镀金膜的试样,其表面薄膜十分完整。通过SR5000光谱辐射计量仪测量合金的红外发射率,结果表明,合金的表面状态和热处理对红外发射率均有较大影响     

《材料保护》2009年第11期摘要

聚酰亚胺膜分子自组装与激光诱导图形化学镀铜为了摒弃化学镀铜中价格昂贵、环境污染的活化工艺,将分子自组装技术与激光诱导化学镀技术结合,在聚酰亚胺薄膜(PI)上成功实现了图形化微米级金属铜沉积:将PI薄膜通过KOH溶液进行表面水     

热处理对氧化铝陶瓷表面铜膜性能的影响

采用射频磁控溅射方法在Al2O3陶瓷基底上淀积厚度为500 nm的Cu膜,并将其于真空热处理炉中采用30℃/min和5℃/min两个升温速率升温至400℃退火处理2h,研究了退火升温速度对铜膜表面形貌、电阻率及附着力的影响.结果表明:退火热处理使Cu薄膜表面粗糙度增加,铜膜电阻率降低,膜-基结合力增强.且30℃/min快速升温较5℃/min缓慢升温退火热处理,Cu薄膜表面粗糙度低,Cu薄膜表面电阻率低,膜-基结合力差.利用自由电子气理论和扩散理论对退火热处理过程引起的性能变化进行了分析解释.     

高透明低发射率ITO薄膜的制备及其光电性能研究

目的研究磁控溅射工艺对ITO薄膜光电性能的影响,为制备高性能ITO薄膜提供数据和理论支撑。方法采用磁控溅射在PET基材上制备ITO薄膜,利用扫描电镜、X射线衍射仪、分光光度计、四探针、红外发射率测仪、Hall效应测试系统等,分析工艺参数对ITO薄膜光电性能的影响。结果随着氧气流量的增加,ITO薄膜在可见光区的透过率先增加,然后变缓,薄膜方块电阻先降低后升高;随着工作气压的增加,ITO薄膜的可见光透过率增加,薄膜方块电阻先下降后上升,电阻率先变小再增大,载流子浓度先增大后减小,红外发射率先减小后增大,晶体结构逐渐由晶态转变为非晶态;随着氩氧比的降低,薄膜红外发射率先降低,然后缓慢升高;随溅射时间的增加,薄膜的厚度逐渐增大,方块电阻、红外发射率和可见光透过率迅速下降,晶体结构逐渐由非晶结构转变为晶体结构。综合对比研究发现,当氧气流量为0.6 mL/min、工作气压为0.4 Pa、氩氧比为19.8∶0.2、溅射时间为80 min时,可获得综合性能优异的ITO薄膜,其可见光透过率大于80%,在8～14μm红外波段的辐射率小于0.2。结论磁控溅射工艺参数是决定薄膜综合质量的重要因素,通过严格控制工艺参数,可获得透明性高、发射率低的ITO薄膜。     

K424合金镀金膜后红外发射率变化

研究了表面镀金膜的K424合金在热处理前后红外发射率的变化和变化机制.XRD分析结果表明,在热处理后基体金属元素扩散到金膜中,并主要形成了Cr在Au中的固溶体-Au0.7Cr0.3.EDXS分析表明,粗糙表面镀金膜的试样在热处理后,表面主要形成了基体金属元素的氧化物;而抛光表面镀金膜的试样,其表面仍为金膜.通过SR5000光谱辐射计量仪测量合金的红外发射率,结果表明,合金的表面状态和热处理对红外发射率均有较大影响.     

靶电流对非平衡磁控溅射制备无氢碳膜结构与性能的影响

利用非平衡磁控溅射(UBMS)技术在硅基片上制备了无氢碳膜,并采用Raman光谱、X射线衍射、傅立叶变换光谱等手段对不同靶电流下沉积的薄膜的微观结构、沉积速率、粗糙度、表面接触角及红外透过率进行了研究.试验结果表明:随着靶电流的增大,薄膜的沉积速率增大,薄膜中sp3键含量增加,薄膜表面接触角增大,红外透过率增大;而薄膜的粗糙度随靶电流增加而减小.靶电流是影响非平衡磁控溅射制备无氢碳膜结构与性能的1个主要因素.     

磁控溅射WCu抗菌薄膜的结构与性能

采用磁控溅射技术在载玻片上制备了钨铜薄膜。结构分析表明,薄膜的沉积速率和铜含量随铜靶电流的增大而升高,晶粒尺寸和显微硬度随铜靶电流的增大而下降。钨铜薄膜形成了固溶体,在铜含量较高时也有铜颗粒析出。WCu薄膜具有较高的疏水性,薄膜润湿性、液滴尺寸和环境温湿度都影响水滴和水膜的干燥时间。平板计数和菌液喷雾抗菌实验表明,WCu薄膜对大肠杆菌具有良好的抗菌作用。WCu薄膜有望用于环境设施的抗微生物表面改性。     

Mo-Al2O3太阳能选择吸收涂层的制备及其光学性能

选用金属Mo作为红外反射层,Mo-Al_2O_3作为吸收层,Al_2O_3作为减反射层,利用磁控溅射镀膜技术,在抛光的316L不锈钢片上制备具有双吸收层的Mo/Mo-Al_2O_3/Al_2O_3太阳能选择吸收膜系,研究减反射层和高、低金属吸收层的厚度及其金属体积分数对膜系选择吸收性能的影响。结果表明,当减反层厚度为50 nm时,所得膜系的选择吸收性能最佳。高金属吸收层厚度的增加会使薄膜反射率的骤升阈值发生红移,薄膜的发射率升高,但其厚度过高,则会影响薄膜的干涉效应。低金属吸收层厚度的增加会导致可见光波段的吸收率增加,红外波段的发射率上升,薄膜反射率的骤升阈值红移。高金属吸收层中金属体积分数增加会导致它的方块电阻降低,使薄膜的红外发射率下降。低金属吸收层中金属体积分数的增加,会导致薄膜的红外干涉下降,使其发射率升高,获得薄膜的最佳吸收率为0.922,发射率为0.029。     

金属薄膜电阻率与表面粗糙度、残余应力的关系

针对磁控溅射Au金属薄膜,从实验角度研究了该薄膜电阻率与表面粗糙度、残余应力的关系,并对结果进行了分析.结果表明:薄膜电阻率随着表面粗糙度及残余应力的增加而增大.分析认为,晶体取向可能在金属薄膜力学性能和功能性之间有某种联系,并从应变能角度给予了解释.该结果为进一步探讨薄膜力学性能和功能特性的内在关系提供了研究基础.     

Ti稳定N三元Cu合金薄膜

由于铜不能渗氮,所以普通的表面硬化方法不能用于提高铜的表面硬度。本文通过添加能够稳定N的合金元素Ti,研究含氮Cu合金薄膜的稳定性以及硬度,探索提高Cu表面硬度的有效方式。利用磁控溅射的方法将不同Ti、N含量的Cu膜溅射到单晶Si(100)基体上进行微结构、硬度以及电阻率的研究,结果表明加入Ti 确实可以使N以钛氮化合物的形式稳定存在于Cu薄膜中,且合金薄膜的硬度比纯Cu膜（~3.5 GPa）有了很大的提高,特别是Cu80.2Ti9.8N10.0薄膜即使在400℃/1h退火后硬度依然高达5.4 GPa。Ti、N含量高的Cu81.2Ti9.9N8.9薄膜的电阻率（~660 μΩ?cm）比Cu88.5Ti4.3N7.2的电阻率（~123 μΩ?cm）要高得多,但是两薄膜的硬度却相差不大,都约为5.2 GPa,由此可见,薄膜中并不是Ti、N含量越高性能越好,因此应该合理控制薄膜中的Ti、N含量。     

Preparation and properties of SiCN diffusion barrier layer for Cu interconnect in ULSI

SiCN thin films and Cu/SiCN/Si structures were fabricated by magnetron sputtering. And some samples underwent the rapid thermal annealing(RTA) processing. The thin-film surface morphology, crystal structure and electronic properties were characterized by atomic force microscopy(AFM), X-ray diffractometry(XRD), Fourier transform infrared transmission(FTIR) and four-point probe(FPP) analyses. The results reveal the formation of complex networks among the three elements, Si, C and N, and the existence of different chemical bonds in the SiCN films, such as Si-C, Si-N, C-N and C=N. The as-deposited SiCN thin films are amorphous in the Cu/SiCN/Si structures and have good thermal stability, and the SiCN thin films are still able to prevent the diffusion reaction between Cu and Si interface after RTA processing at 600 ℃ for 5 min.     

One-step fabrication process of superhydrophobic green coatings

In general, creation of superhydrophobic surfaces is composed of two steps: (i) creation of a rough surface and (ii) passivation of the surface with the low surface energy molecules or coatings. Superhydrophobic properties cannot be achieved on a surface without these two essential factors fulfilled. In the present work we have demonstrated that superhydrophobic silver films on copper (Cu) substrates can be created in just a one-step process via galvanic reactions by immersing the Cu substrates in silver nitrate solution containing benzoic acid, simplifying the complexity of two different steps involved in the former method. Silver films were also fabricated using similar process without benzoic acid for comparative studies. The X-ray diffraction (XRD) and Fourier transform infrared spectroscopy (FTIR) confirmed the formation of benzoic acid incorporated silver films. Scanning electron microscopy (SEM) images showed micro-nano structured leaf-like and flower-like morphological features in the films prepared without and with benzoic acid, respectively. Benzoic acid incorporated flower-like silver films demonstrated water repellency as the water drops rolled off those surfaces whereas complete absorption of water drops were encountered on the leaf-like silver surfaces prepared without benzoic acid.     

泡沫铜表面改性对化学气相沉积高质量泡沫金刚石的影响

目的选择合适的过渡层材料改善三维连通泡沫铜衬底与金刚石之间的结合性,制备出三维连通结构的泡沫金刚石。方法选择三维连通的泡沫铜作为衬底,使用磁控溅射技术在其表面沉积Ti、Cr过渡层,然后通过热丝化学气相沉积技术(HFCVD)在表面改性后的泡沫铜衬底上沉积金刚石涂层。通过扫描电子显微镜(SEM)、能谱分析仪(EDS)、拉曼光谱仪及红外热成像仪等仪器,对样品的表面/截面形貌、成分结构及热扩散性能进行检测与分析。结果经过Ti、Cr过渡层改性后,泡沫铜表面均能沉积出连续致密的高质量金刚石涂层,在相同的CVD沉积参数下,Cr过渡层泡沫金刚石(Cu-Cr/Dia)的晶粒尺寸更大(~5μm),晶粒质量更高,且膜层厚度大于Ti过渡层泡沫金刚石(Cu-Ti/Dia),Cu-Ti/Dia与铜衬底的结合性要优于Cu-Cr/Dia。Cu-Cr/Dia和Cu-Ti/Dia的热扩散性能均优于泡沫铜,其中Cu-Cr/Dia的热扩散能力略高于Cu-Ti/Dia。结论镀覆Ti、Cr过渡层有效增强了金刚石与泡沫铜衬底之间的界面结合,成功制备了三维连通结构的泡沫金刚石。     

Cu7In3ǰ��Ĥ�Ʊ�(112)����ȡ��CuInS2��Ĥ

 为考察具有Cu7In3相结构的Cu In前驱膜对CuInS2薄膜微结构的影响,采用电沉积法制备了Cu In薄膜,并对制备态Cu In薄膜在380 ℃进行真空退火处理制备Cu7In3前驱膜。采用硫化法对制备态Cu In薄膜和Cu7In3薄膜进行硫化处理制备了CIS薄膜。结果表明,两种前驱膜经硫化处理均在表面生成CuxS偏析相,经KCN刻蚀处理发现以Cu7In3为前驱膜制备的CuInS2薄膜高质量结晶,具有(112)择优取向,适合于制备CIS薄膜太阳能电池吸收层。     

Co和Cu薄膜电学特性和连续性特征的判据

采用离子束溅射沉积了不同厚度的Co膜和Cu膜,利用四电极法测量了薄膜的电阻率,从而得到了Co膜和Cu膜的电导率随薄膜厚度的变化关系。实验结果表明,Co膜和Cu膜的电学特性都具有明显的尺寸效应。比较了同时考虑表面散射和晶界散射的电导理论得到的电导率公式与实验结果,不同薄膜厚度电导率的理论结果与实验结果符合较好。提出了厚度作为金属薄膜生长从不连续膜进入连续膜的一个特征判据,并利用原子力显微镜(AFM)观测了膜厚在特征厚度附近的Co膜和Cu膜的表面形貌。     

亚微米厚铜薄膜的微观结构及疲劳损伤行为

在具有高弹性和力学稳定性的柔性基底上,用磁控溅射系统制备了亚微米厚铜薄膜,利用透射电镜（TEM）、扫描电镜（SEM）电子背散射成像及X射线衍射（XRD）对铜薄膜进行了微观结构表征．采用恒载荷幅控制研究了亚微米厚度铜薄膜的疲劳损伤行为．结果表明：退火后的铜薄膜呈现强烈的（111）织构,薄膜中存在大量的微米、纳米尺度孪晶．在恒载荷幅作用下,亚微米厚的薄膜不易产生疲劳挤出和微裂纹,疲劳裂纹容易在界面处萌生,孪晶附近的位错塞积及界面附近变形的不协调性导致了疲劳裂纹的产生．而亚微米厚铜薄膜疲劳强度的提高来源于薄膜厚度、晶粒尺寸和孪晶尺寸三个微尺度的约束．     

Infrared emissivity and corrosion-resistant property of maleic anhydride grafted ethylene-propylene-diene terpolymer (EPDM-g-MAH)/Cu coatings

Maleic anhydride grafted ethylene-propylene-diene terpolymer (EPDM-g-MAH) was prepared by grafting copolymerization method. Composite coatings with varied infrared emissivity were obtained by using copper (Cu) powder as inorganic pigments, either EPDM or EPDM-g-MAH as organic adhesive. The influences of the content of Cu powder and adhesive kinds on the infrared emissivity of the composite coatings were investigated. The as-prepared coatings were characterized by FTIR spectroscopy, infrared emissometer and SEM. The corrosion-resistant property of the coatings in aqueous 3.5 wt.% NaCl was assessed by the potentiodynamic polarization technique and electrochemical impedance spectroscopy (EIS). The results have shown that the interfacial interaction between EPDM and Cu is improved due to the MAH grafting on EPDM, benefiting from the compatibility of EPDM with Cu and the low porosity of EPDM/Cu coatings, which leads to the lower infrared emissivity and better corrosion-resistant property of the coatings.     

梁三点弯曲法测量薄膜弹性模量

用电刷技术在不锈钢基体一侧表面上刷镀了Cu膜，用电镀技术在不锈钢基体一侧表面或双侧表面上制备Ni膜。用梁三点弯曲法在自制的设备上测量不锈钢基体以及不锈钢基体上不同厚度Cu膜和Ni膜的弹性模量E。研究表明：在测量的膜厚范围内(7μm-15μm)，Cu膜和Ni膜的弹性模量E不随膜厚变化，并且接近各自块材的弹性模量。     

A Method to Prepare Nano-sized Copper Particles and Rods on the Surface of Cu Composite Films

Nano-sized Copper(Cu)particles and rods were prepared by annealing Cu-Zr,and Cu-Al-Zr composite films on polyimide substrates.XRD,FESEM and EDS were used to characterize their microstructure and composition.Results show that faceted Cu particles are regular and pure Cu element.Furthermore,it was interesting to find that Cu nanorods might appear on the surface of annealed Cu-Al-Zr composite thin films.Based on the experimental results and analysis,it were speculated that these Cu particles are single crystals.The particle average sizes are closely related to the content of Zr as well as annealing temperature and atmosphere.This work may provide a new approach to prepare metal particles and nanorods on the surface of Cu composite films on polyimide substrates.     

Characterization of CuInS2 thin films prepared by sulfurization of Cu-In precursor

CuInS2 thin films were prepared by sulfurization of Cu-In precursors. The influences of the deposition sequence of Cu and In layers, such as Cu/In, Cu/In/In, and In/Cu/In, on structure, topography, and optical properties of CuInS2 thin films were investigated. X-ray diffraction results show that the deposition sequence of Cu and In layers affects the crystalline quality of CuInS2 films. Atomic force microstructure images reveal that the grain size and surface roughness are related to the deposition sequence used. When the deposition sequence of precursor is In/Cu/In, the CuInS2 thin films show a single-phase chalcopyrite structure with （112） preferred orientation. The surface morphology of CIS films is uniform and compacted. The absorption coefficient is larger than 10^4 cm^-1 with optical band gap Egclose to 1.4 eV.