Effect of Benzotriazole on the dissolution of copper single crystal planes in dilute sulphuric acid

The kinetics of the dissolution of copper single crystal planes in aerated 0·1N H₂SO₄ containing various concentrations (10⁻⁶−10⁻²M) of Benzotriazole have been studied. The dissolution rates which were controlled by surface reaction, were a function of the temperature, crystallographic orientation and the concentration of Benzotriazole. The stabilities of the crystal planes were in the order (100) > (110) > (111). At 7·5 × 10⁻³M Benzotriazole, Cu-Benzotriazole film appeared on the surface, bringing mechanical passivity. Benzotriazole acted as cathodic inhibitor at low concentrations and anodic inhibitor at high concentrations. The corrosion potentials of the crystal planes were in the order (100) > (110) > (111) at all concentrations of benzotriazole.     

Effect of halide ions on the dissolution of copper single crystal planes in dilute sulphuric acid

The rates of dissolution of copper single crystal planes in dilute sulphuric acid containing various concentrations (10⁻⁸ to 10⁻²M) of Cl⁻, Br⁻ and I⁻ are determined at 30°C. The dissolution rates, which are controlled by transport process in solution, are a function of the temperature, stirring rate, oxygen solubility, crystallographic orientation and the concentration of halide ions. Halide ions acted as anodic inhibitor at low concentrations and cathodic inhibitor at high concentrations. The changes in the dissolution rates have been attributed to specific adsorption of halide ions or precipitation of cuprous halides on the surface of the crystal planes.     

Thermodynamic studies on LaFeO3(s)

The enthalpy increments and the standard molar Gibbs energies in the formation of LaFeO₃(s) have been measured using a high-temperature Calvet micro-calorimeter and a solid oxide galvanic cell, respectively. The corresponding expression for enthalpy increments is given as:

H°(T)−H°(298.15 K)(J mol⁻¹)(±1.2%)=−36887.27+103.53 T(K)+25.997×10⁻³T²(K)+11.055×10⁵/T(K).

The heat capacity, the first differential of H°(T)−H°(298.15 K) with respect to temperature, is given as:

C_p,m°(T)(JK⁻¹mol⁻¹)=103.53+51.994×10⁻³T(K)−11.055×10⁵/T²(K).

From the measured e.m.f. of the cell, (−)Pt/(LaFeO₃(s)+La₂O₃(s)+Fe(s))//CSZ//(Ni(s)+NiO(s))/Pt(+), and the relevant Δ_fG_m°(T) values from the literature, the Δ_fG_m°(LaFeO₃, s, T) was calculated, and is given as:

Δ_fG_m°(LaFeO₃, s, T)(kJmol⁻¹)(±0.72)=−1319.2+0.2317T(K).

The calculated Δ_fH_m°(LaFeO₃, s, 298.15 K) and S°(298.15 K) values obtained using the second law method are −1334.7 kJ mol⁻¹ and 128.9 J K⁻¹ mol⁻¹, respectively.     

Interfacial interaction of solid nickel with liquid Pb-free Sn–Bi–In–Zn–Sb soldering alloys

The dissolution process of nickel in liquid Pb-free 87.5% Sn–7.5% Bi–3% In–1% Zn–1% Sb and 80% Sn–15% Bi–3% In–1% Zn–1% Sb soldering alloys has been investigated by the rotating disc technique at 250–450 °C. The temperature dependence of the nickel solubility in soldering alloys obeys a relation of the Arrhenius type c_s = 4.94 × 10² exp(−39500/RT)% for the former alloy and c_s = 4.19 × 10² exp(−40200/RT)% for the latter, where R is in J mol⁻¹ K⁻¹ (8.314 J mol⁻¹ K⁻¹) and T is in K. Whereas the solubility values differ considerably, the dissolution rate constants are rather close for these alloys and fall in the range (1–9) × 10⁻⁵ m s⁻¹ at disc rotational speeds of 6.45–82.4 rad s⁻¹. Appropriate diffusion coefficients vary from 0.16 × 10⁻⁹ to 2.02 × 10⁻⁹ m² s⁻¹. With both alloys, the Ni₃Sn₄ intermetallic layer is formed at the interface of nickel and the saturated or undersaturated melt at dipping times of 300–2400 s. The other Ni–Sn intermetallic compounds are found to be missing. A simple mathematical equation is proposed to evaluate the Ni₃Sn₄ layer thickness in the case of undersaturated melts. The tensile strength of the nickel-to-alloy joints is 94–102 MPa, with the relative elongation being 2.0–2.5%.     

Influence of the prior oxide film on the growth and structure of oxides formed on Fe---26Cr alloys at 600°C

A Fe---26 Cr alloy has been oxidized at 600°C in 5 × 10⁻³, 5 × 10⁻² and 5 × 10⁻¹ torr oxygen to examine the influence of the prior oxide film on the growth and structure of oxides formed at high temperature. Different prior oxides were produced either by electropolishing or by annealing the electropolished specimen in vacuum at 600°C. Auger electron spectroscopy (AES) showed the Cr content of the prior oxide film to be increased from 50 to 95% during annealing, and electron diffraction indicated a change in oxide structure from amorphous to crystalline. At 5 × 10⁻³ torr, electropolished Fe---26 Cr oxidizes faster than the vacuum annealed specimens because the amorphous prior oxide gives rise to a finer-grained cubic oxide with more grain boundary easy diffusion paths for cation transport. From AES and electron back-scattering Fe⁵⁷ Mössbauer spectroscopy it is concluded that this cubic oxide is a duplex layer of inner γ-Cr₂O₃ and outer Fe₃O₄. The oxidation rate slows markedly when nucleated α-Fe₂O₃ covers the cubic oxide. With increased oxidation time Fe₃O₄ converts to α-Fe₂O₃ and the γ-Cr₂O₂ to α-Cr₂O₃. Annealed Fe---26 Cr oxidizes slower primarily because of a lower cation transport through a coarser-grained cubic oxide rather than because of a higher Cr content in the prior oxide. α-Fe₂O₃ nucleates at an earlier stage in the oxidation and essentially stifles the reaction. The extent of Cr incorporation into any of the Fe oxides produced in 5 × 10⁻³ torr oxygen is small ( 5%). Increasing the oxygen pressure from 5 × 10⁻³ to 5 × 10⁻² and 5 × 10⁻¹ torr has little effect on the mechanism of oxidation of vacuum annealed Fe---26 Cr, except that the overall extent of oxidation is less because of earlier α-Fe₂O₃ formation and, after a few hours of oxidation, up to 20% Cr is incorporated into the α-Fe₂O₃ lattice. On electropolished Fe---26 Cr at 5 × 10⁻² and 5 × 10⁻¹ torr oxygen nodules of α-Cr₂O₃ form and continue to grow both at grain boundaries and within the grains. Possible mechanisms for this nodule formation, which is exclusive to electropolished specimens oxidized at the higher pressures, are considered.     

The effect of citrate ions on the stress corrosion cracking of Al-Brass in acidic sulphate solutions

The addition of tri-sodium citrate to acidic copper sulphate solutions produces contrasting effects on the occurrence of the stress corrosion cracking (SCC) in Al-brass. Stimulating effects are observed in a wide range of low citrate concentrations (5 × 10⁻⁶ to 10⁻² M) in which the formation of Cu₂O deposits is delayed or suppressed. Inhibitive effects are observed at higher citrate concentrations at which the formation of crystalline copper citrate deposits takes place. The contrasting effects produced by citrates on the corrosive process are discussed in terms of the different weight that the formation of cuprous citrate complexes can have on the activity of the soluble copper species and, consequently, on the chemical and electrochemical equilibria at the metal/solution interface.     

Magnetite stability in aqueous solutions as a function of temperature

Magnetite solubility, as a function of temperature and partial hydrogen pressure, with reference to the typical conditions of the operating fluid of a steam generator of a thermal power plant, has been studied by rigorously solving the problem of equilibria and adopting the scheme proposed by Sweeton and Baes [J. Chem. Thermodynamics2, 479 (1970)]. Stoichiometric calculations have proved that magnetite solubility attains its maximum value, which depends on the characteristics of the electrolytic solution, when the temperature is about 100°C, independently of the type of environment. A rigorous pH calculation was carried out using the method of the characteristic function, which can be applied also to complex systems, and assuming that the effect of the ionic strength may be neglected. The main aim of this study, besides helping power plant chemists to select a proper feedwater conditioning, was to calculate the pH, on a molal basis, of a solution through the best-fit of its exact values, as a function of ammonia concentration inside the inverval 1.0 × 10⁻⁸ to 9.0 × 10⁻³ m with a third-degree logarithmic polynomial. The results, which were obtained in the case of a solution containing NH₄OH and H₂CO₃, demonstrate the validity of this technique which allows the pH of a fairly complex system to be computed accurately. It also allows the correct amount of magnetite dissolution products to be evaluated without considering in detail its chemical equilibria when the solution temperature is above 200°C. This remark was derived from the pH calculations of an ammonia containing solution, which showed its independence of partial hydrogen pressure in the high temperature region, at least as far as the interval 0–1 atm was concerned. The determination of the pH, on a molar basis, of a solution at temperatures of 200, 250, 300 and 350°C, contaminated with sea water so that its acid conductivity was 300μΩ⁻¹cm⁻¹, has been performed. These results have shown that the buffering effectiveness of ammonia is negligible when its concentration falls within the interval 1.0 × 10⁻⁶ to 2.0 × 10⁻⁵ M, whereas in the range 6.0 × 10⁻⁵ to 3.0 × 10⁻⁴ M, its effect is quite pronounced.     

Hydro-chemical conversion of galena in FeCl3-KCl solution

The behaviours of complexation and dissolution of PbCl₂ on the surface of galena were investigated to explore the process of hydro-chemical conversion of galena (PbS) in chloride media. By means of solution chemistry calculation, the production and dissolution of the products PbCl₂ were studied. And the passivation of the galena was studied by Tafel curve. The results show that PbCl₄²⁻ is the main form of PbCl₂ presented in the saturated potassium chloride (KCl) solution. The PbCl₂ crystal is easy to precipitate when the total concentration of chloride ion ([Cl⁻]_T) is equal to 0.92 mol/L, and it is inclined to dissolve when [Cl⁻]_T is more than 0.92 mol/L. The chloride complexing reaction rate strongly depends on the Fe³⁺ion concentration when it is less than 6×10⁻⁴mol/L, while passivation occurs on the surface of the electrode when Fe³⁺ concentration is larger than 6×10⁻⁴mol/L. The reaction rate increases obviously when KCl is added, since the activity of Cl⁻ increases; thus accelerates the dissolution of PbCl₂.     

Effects of little Ce addition on as-cast microstructure and creep properties of Mg-3Sn-2Ca magnesium alloy

The effects of little Ce addition on the as-cast microstructure and creep properties of Mg-3Sn-2Ca magnesium alloy were investigated. The results indicate that adding 0.5% (mass fraction) Ce to Mg-3Sn-2Ca alloy does not cause the formation of any new phase in the alloy. However, an interesting microstructural change in the as-cast Mg-3Sn-2Ca alloy added with 0.5%Ce is observed. After adding 0.5%Ce to Mg-3Sn-2Ca alloy, not only the volume fraction of CaMgSn phase in the alloy is decreased but also the CaMgSn phases in the alloy are refined. In addition, adding 0.5%Ce to Mg-3Sn-2Ca alloy can also improve the creep-resistant properties of the alloy. After adding 0.5%Ce to Mg-3Sn-2Ca alloy, the second creep rate of the alloy at 150 °C and 70 MPa for 100 h changes from 3.28×10⁻⁸ to 1.81×10⁻⁸ s⁻¹.     

Thermo-physical and thermal cycling properties of plasma-sprayed BaLa2Ti3O10 coating as potential thermal barrier materials

Increased turbine inlet temperature in advanced turbines has promoted the development of thermal barrier coating (TBC) materials with high-temperature capability. In this paper, BaLa₂Ti₃O₁₀ (BLT) was produced by solid-state reaction of BaCO₃, TiO₂ and La₂O₃ at 1500 °C for 48 h. BLT showed phase stability between room temperature and 1400 °C. BLT revealed a linearly increasing thermal expansion coefficient with increasing temperature up to 1200 °C and the coefficients of thermal expansion (CTEs) are in the range of 1 × 10^− 5–12.5 × 10^− 6 K^− 1, which are comparable to those of 7YSZ. BLT coatings with stoichiometric composition were produced by atmospheric plasma spraying. The coating contained segmentation cracks and had a porosity of around 13%. The microhardness for the BLT coating is 3.9–4.5 GPa. The thermo-physical properties of the sprayed coating were investigated. The thermal conductivity at 1200 °C is about 0.7 W/mK, exhibiting a very promising potential in improving the thermal insulation property of TBC. Thermal cycling result showed that the BLT TBC had a lifetime of more than 1100 cycles of about 200 h at 1100 °C. The failure of the coating occurred by cracking at the thermally grown oxide (TGO) layer due to severe oxidation of bond coat. Based on the above merits, BLT could be considered as a promising material for TBC applications.     

Synthesis and characterization of a series of bis(dimethyl-n-octylsilyl)oligothiophenes for organic thin film transistor applications

A series of bis-dimethyl-n-octylsilyl end-capped oligothiophenes consisting of two to six thiophene units has been synthesized and characterized to develop novel organic semiconductor materials. The UV–vis spectral data indicate that these silyl end-capped oligothiophenes have longer conjugation lengths as evidenced by the higher λ_max values than the corresponding unsubstituted thiophene oligomers. The thermal analyses indicate that the bis-silylated oligothiophenes show lower melting point (DSi-4T = 80 °C; DSi-5T = 115 °C; DSi-6T = 182 °C) than the corresponding dialkylated thiophene oligomers by 100 °C and hexamer DSi-6T exhibits a liquid crystalline mesophase at 143 °C. The α,ω-bis(dimethyl-n-octylsilyl)oligothiophenes (DSi-6T) have a remarkably high solubility in chloroform which are comparable to the corresponding α,ω-dihexyloligothiophenes. The remarkably increased solubility by these silyl end groups leads bis-silylated oligothiophenes to be applicable to solution processable devices for thin film transisitor (TFT) by utilizing a spin-coating technique. α,ω-Bis(dimethyl-n-octylsilyl)sexithiophene can be deposited as active semiconducting layer in thin film transistors, either by vacuum evaporation or by spin-coating. A high charge-carrier mobility has been obtained for both deposition techniques, μ = 4.6 × 10⁻² and 1.4 × 10⁻² cm² V⁻¹ s⁻¹, respectively.     

Sorption behavior of iminodiacetic acid resin for indium

In（Ⅲ） was quantitatively adsorbed by iminodiacetic acid resin （IDAAR） in the medium of pH = 4.52. The statically saturated sorption capacity of IDAAR is 235.5 mg·g^-1. 1.0 mol·L^-1 HCl can be used as an eluant. The elution efficiency is 97.9%. The resin can be regenerated and reused without apparent decrease of sorption capacity. The sorption rate constant is k298 = 1.94 × 10-5 s^-1. The apparent sorption activation energy of IDAAR for In（Ⅲ） is 20.1 kJ·mol^-1. The sorption behavior of IDAAR for In（HI） obeys the Freundlich isotherm. The enthalpy change is AH= 17.2 kJ·mol^-1.     

High temperature oxidation of Nb-10 at. % W alloy

By means of the “interruption kinetic technique”, as applied to oxidation of tungsten under 0.048 bar O₂, the oxygen diffusion coefficient in growing WO_8−x has been determined for the temperature range of 568–908°C and may be expressed as: D = 6.83 × 10⁻² exp (−29,890/RT), with the activation energy given in cal/mole. Calculations are made to show the influence of temperature on the concentration of oxygen vacancies in WO_3−x, on their free energy of formation and on the ionic conductivity in WO_3−x. From the kinetic data of W oxidation at 800°C, prior to interruption-annealing, values of oxygen diffusion coefficients due to oxygen transport via lattice and short-circuit paths have been calculated as functions of time for growing WO_3−x. A simplified oxidation model is used for evaluation of the oxidation rate constant of W at 800°C.     

Conductivity of a new pyrophosphate Sn0.9Sc0.1(P2O7)1−δ prepared by an aqueous solution method

New pyrophosphate Sn_0.9Sc_0.1(P₂O₇)_1−δ was prepared by an aqueous solution method. The structure and conductivity of Sn_0.9Sc_0.1(P₂O₇)_1−δ have been investigated. XRD analysis indicates that Sn_0.9Sc_0.1(P₂O₇)_1−δ exhibits a 3 × 3 × 3 super structure. It was found that Sn_0.9Sc_0.1(P₂O₇)_1−δ prepared by an aqueous method is not conductive. The total conductivity of Sn_0.9Sc_0.1(P₂O₇)_1−δ in open air is 2.35 × 10⁻⁶ and 2.82 × 10⁻⁹ S/cm at 900 and 400 °C respectively. In wet air, the total conductivity is about two orders of magnitude higher (8.1 × 10⁻⁷ S/cm at 400 °C) than in open air indicating some proton conduction. SnP₂O₇ and Sn_0.92In_0.08(P₂O₇)_1−δ prepared by an acidic method were reported fairly conductive but prepared by similar solution methods are not conductive. Therefore, the conductivity of SnP₂O₇-based materials might be related to the synthetic history. The possible conduction mechanism of SnP₂O₇-based materials has been discussed in detail.     

The behavior of aluminum in alkaline media

Polarization and impedance measurements were performed on aluminum in 0.1, l and 3 mol/l NaOH. The frequency range studied was 1×10⁻²–1×10⁴ Hz in the potential range −2 to −1 V vs. SCE. In polarization experiments the potential was extended up to 0 V vs. SCE. The behavior of the system was characterized by a high frequency capacitive loop related to the charge transfer due to dissolution of the metal, an inductive loop at medium frequency which we have attributed to surface roughening and a second capacitive loop obtained at low frequency which has been ascribed to the adjustment of the surface film to the change in potential resulting in higher charge transfer resistance.     

The mechanism of dezincification and the effect of arsenic. II

Abstract

Dezincification occurs by dissolution of both zinc and copper, followed by redeposition of copper from the oxygen-free cuprous chloride/zinc chloride anolyte. Deposition of copper from such a solution by reduction of Cu⁺ requires a potentIal below ?0·41 V but Cu²⁺, formed by disproportionation of cuprous chloride, can be reduced to copper at potentials up to ?0·16 V. As the potential of film-free beta-brass iS ?0·56 V, reduction of copper at the advancing front of dezincification in beta-brass can occur by direct cathodic re~uction of cuprous ions. Alpha-brass, with a potential of ?0·38V, can only reduce cupricions; dezincification of alpha-brass therefore depends upon formation of Cu²⁺ by disproportionation of cuprous chlonde at the advancing front.

Under the conditions existing at the advancing front, disproportionation of cuprous chloride can be suppressed by a small amount of arsenic, acting through reactions in which it cycles between the As³⁺ and AS_(solid)states. Arsenic consequently inhibits dezincification of alpha-brass but the dezincification of beta-brass, which does not require the formation of cupric ions, is unaffected.     

Microstructure and superplasticity of AZ31 sheet fabricated by differential speed rolling

Microstructure evolution and superplasticity in AZ31 alloy by differential speed rolling (DSR) with a high-speed ratio (=3) between the upper and lower rolls was examined. With increase in thickness reduction by DSR at 473 K, degree of grain refinement and microstructure homogeneity increased. The microstructure obtained by a single rolling pass for a 70% reduction in thickness consisted of recrystallized grains with a mean size of 2 μm, and fraction of HAGBs and average misorientation angle determined by the EBSD analysis were 0.47 and 23.21°, respectively. The DSR AZ31 alloy exhibited enhanced superplasticity as compared with the conventionally processed AZ31. A maximum elongation of 830% was obtained at 2 × 10⁻⁴ s⁻¹ and 673 K. The strain hardening exponent measured at 2 × 10⁻⁴ s⁻¹ and 673 K was as high as 0.71, which could be related to accelerated grain growth in the highly refined microstructure during superplastic flow.     

Effect of Ru addition on the properties of Al-doped ZnO thin films prepared by radio frequency magnetron sputtering on polyethylene terephthalate substrate

The addition of ruthenium in aluminum-doped zinc oxide transparent conducting thin films was deposited on polyethylene terephthalate at 20 °C by radio frequency magnetron sputtering technique. The structure and electrical properties of the films were investigated with respect to variation of Ru concentration. The XRD and FESEM results show that the film with 0.5 wt% Ru doping has the best crystallinity and larger pyramid-like grains, therefore the resistivity reached to a lowest value of 9.1 × 10⁻⁴ Ωcm. The low carrier mobilities of the films (3–7.2 cm² V⁻¹ s⁻¹), however, were limited by ionized impurity scattering and grain boundary scattering mechanisms since the carrier concentrations were ranged from 2.2 × 10²⁰ to 9.5 × 10²⁰ cm⁻³. The transmittance in the visible is greater than 80% with the optical band gap in the order of 3.352–3.391 eV.     

Crystal structure of single phase and low sintering temperature of α-cordierite synthesized from talc and kaolin

Cordierite body with the formulation of 2.8MgO·1.5Al₂O₃·5SiO₂ was prepared from talc and kaolin as the basic raw materials. Following glass crystallization technique the glass powder was successfully heat treated at 900 °C for 2 h to form a single-phase α-cordierite. The crystal structure of α-cordierite was analysed using X-ray diffraction technique and the Rietveld structural refinement method. Differential thermal analysis (DTA), Fourier-transform infrared (FTIR), field emission scanning electron microscopy (FESEM), coefficient of thermal expansion (CTE) and dielectric properties were also performed. Results show that the materials crystallized as a hexagonal structure with space group of P6/mcc and the room temperature lattice parameters are a = 9.743742 (Å) and c = 9.389365 (Å). FTIR analysis on the glass revealed that only silicate species is the only unit that exists in the glass network. DTA also confirmed that α-cordierite completely formed after 13.5 min of isothermal heating at 900 °C. Coefficient of thermal expansion of synthesized α-cordierite is 2.5 × 10⁻⁶ °C⁻¹. The dielectric constant is between 5.0 and 5.5 for 1 MHz and 1.8 GHz, respectively, and the dielectric loss is in the range 10⁻². FESEM micrographs revealed that the material is fully densified.     

Studies on accumulation of chloride ions in pits growing during anodic polarization

The concentration of Cl⁻ ions within pits grown on 18Cr---12Ni---2Mo---Ti austenitic stainless steel specimens immersed in vertical position in 0·5N NaCl + 0·1N H₂SO₄ and polarized to 860 mV_NHE was studied at 20°C. The Cl⁻ concentration within pits increases with time to a maximum and then decreases (for example, after 6 h 2N Cl⁻ is observed). The higher accumulation of Cl⁻ within pits, the slower their development. For slowly growing pits a maximum value of about 12N Cl⁻ was observed. The low pH values of the solution within pits are the consequence of high Cl⁻ contents occurring there.