The effect of oxygen on the epitaxial growth of diamond

We studied the effect of oxygen on the growth quality of diamond epitaxial layers. After oxygen is added during the growth of the diamond epitaxial layer, as the thickness of the epitaxial layer increases, the full width at half maximum of the rocking curve of the (004) plane of diamond epitaxial layer increases continuously, and, in addition, the intensities of both the Raman peaks and the free exciton emission peaks of the diamond epitaxial layer decrease continuously. These experimental results demonstrate that as the thickness of the diamond epitaxial layer increases, the quality of the diamond epitaxial layer degrades. The strong etching effect of the OH radical groups in the plasma on the diamond epilayers leads to the degradation of their crystallinity.     

The effect of oxygen content on the performance of low-voltage organic phototransistor memory

Optical writing and electrical erasing organic phototransistor memory (OPTM) is a promising photoelectric device for its novel integration of photosensitive and memory properties. The performance of OPTM can be influenced by the trap density of the gate dielectric layer. Here, we occupy tantalum pentoxide (Ta₂O₅), which is a prospective material in microelectronics field, as the gate dielectric. By increasing the oxygen content from 10% to 50% during the fabrication process of Ta₂O₅, it is found that the mobility and the photoresponsivity of OPTMs are significantly enhanced about 10 times and the retention time is greatly increased to 8.4 × 10⁴ s as well. As far as we know, this is the first example that the modulation of oxygen content can improve the OPTM performance. Furthermore, the change of the oxygen content gives rise to the alteration of the threshold voltage and memory window, of which the absolute values of all the threshold voltage are below 5 V which is low enough to reduce the power consumption. It is found that the oxygen content can influence the surface roughness and surface energy of Ta₂O₅ films, which alter the nucleation and orientation of semiconductor layers, change the contact resistance and modulate the electron trap density in the Ta₂O₅ films.     

激光等离子体相互作用中量子电动力学效应对激光能量吸收的影响

为了研究强激光与等离子体相互作用中的量子电动力学(QED)效应对激光能量吸收的影响,用理论方法对强度为I>10^22wcm^-2、反方向传播的两束圆极化强激光与等离子体固体靶相互作用过程进行研究。探讨经典和QED情况下的辐射阻尼效应对激光能量吸收的影响。结果表明,在QED情况下,在相互作用过程中能够产生高能电子和高能辐射。这些高能电子集体振荡过程中的辐射阻尼导致激光能量的强吸收。QED情况比经典情况具有更好的实际应用价值。     

The effect of electron cyclotron resonance plasma parameters on the aspect ratio of trenches in HgCdTe

Values of the aspect ratio for trenches etched into HgCdTe by an electron cyclotron resonance (ECR) plasma containing hydrogen and argon are limited by the phenomenon of etch lag. Modeling this plasma as an ion assisted, reactive-etching process leads to a set of conditions that greatly reduces etch lag. Use of these new process conditions produces trenches with aspect ratios greater than 3, widths less than 3 μm, and depths in excess of 15 μm.