A 54×54-b regularly structured tree multiplier

A 54-b×54-b parallel multiplier was implemented in 0.88-μm CMOS using the new, regularly structured tree (RST) design approach. The circuit is basically a Wallace tree, but the tree and the set of partial-product-bit generators are combined into a recurring block which generates seven partial-product bits and compresses them to a pair of bits for the sum and carry signals. This block is used repeatedly to construct an RST block in which even wiring among blocks included in wire shifters is designed as recurring units. By using recurring wire shifters, the authors can expand the level of repeated blocks to cover the entire adder tree, which simplifies the complicated Wallace tree wiring scheme. In addition, to design time savings, layout density is increased by 70% to 6400 transistors/mm², and the multiplication time is decreased by 30% to 13 ns     

An 8.8-ns 54×54-bit multiplier with high speed redundantbinary architecture

A high speed redundant binary (RB) architecture, which is optimized for the fast CMOS parallel multiplier, is developed. This architecture enables one to convert a pair of partial products in normal binary (NB) form to one RE number with no additional circuit. We improved the RB adder (RBA) circuit so that it can make a fast addition of the RB partial products. We also simplified the converter circuit that converts the final RE number into the corresponding NE number. The carry propagation path of the converter circuit is carried out with only multiplexer circuits. A 54×54-bit multiplier is designed with this architecture. It is fabricated by 0.5 μm CMOS with triple level metal technology. The active area size is 3.0×3.08 mm² and the number of transistors is 78,800. This is the smallest number for all 54×54-bit multipliers ever reported. Under the condition of 3.3 V supply voltage, the chip achieves 8.8 ns multiplication time. The power dissipation of 540 mW is estimated for the operating frequency of 100 MHz. These are, so far, the fastest speed and the lowest power for 54×54-bit multipliers with 0.5-μm CMOS     

A 4.4 ns CMOS 54×54-b multiplier using pass-transistormultiplexer

A 54×54-b multiplier using pass-transistor multiplexers has been fabricated by 0.25 μm CMOS technology. To enhance the speed performance, a new 4-2 compressor and a carry lookahead adder (CLA), both featuring pass-transistor multiplexers, have been developed. The new circuits have a speed advantage over conventional CMOS circuits because the number of critical-path gate stages is minimized due to the high logic functionality of pass-transistor multiplexers. The active size of the 54×54-b multiplier is 3.77×3.41 mm. The multiplication time is 4.4 ns at a 3.5-V power supply     

A 32×32-bit multiplier using multiple-valued MOS current-modecircuits

A 32×32-bit multiplier using multiple-valued current-mode circuits has been fabricated in 2-μm CMOS technology. For the multiplier based on the radix-4 signed-digit number system, 32×32-bit two's complement multiplication can be performed with only three-stage signed-digit full adders using a binary-tree addition scheme. The chip contains about 23600 transistors and the effective multiplier size is about 3.2×5.2 mm², which is half that of the corresponding binary CMOS multiplier. The multiply time is less than 59 ns. The performance is considered comparable to that of the fastest binary multiplier reported     

A 4.1-ns compact 54×54-b multiplier utilizing sign-selectBooth encoders

A 54×54-b multiplier with only 60 K transistors has been fabricated by 0.25-μm CMOS technology. To reduce the total transistor count, we have developed two new approaches: sign-select Booth encoding and 48-transistor 4-2 compressor circuits both implemented with pass transistor logic. The sign-select Booth algorithm simplifies the Booth selector circuit and enables us to reduce the transistor count by 45% as compared with that of the conventional one. The new compressor reduces the count by 20% without speed degradation. By using these new circuits, the total transistor count of the multiplier is reduced by 24%. The active size of the 54×54-b multiplier is 1.04×1.27 mm and the multiplication time is 4.1 ns at a 2.5-V power supply     

Parallel implementation of a 4×4-bit multiplier using amodified Booth's algorithm

The design of a 4×4-bit multiplier using the modified Booth's algorithm in 2-μm NMOS technology is discussed. The main features of this chip are its 62.5-MHz operating frequency and 31.5-mW power dissipation. The chip occupies an area of 1.37 mm². A novel adder-cum-subtractor circuit was designed to realize the arithmetic processing part     

A fast final adder for a 54-bit parallel multiplier for DSP application

A novel redundant binary-to-natural binary converter circuit is proposed which is used in the final addition stage of parallel multipliers. Use of this circuit in the final adder stage proves to be 17% faster than carry-look-ahead implementation. We used this algorithm in such a way that no redundant binary adder is required in compressing partial product rows. Only the natural 4:2 compressor circuits are used.     

A 16-bit self-testing multiplier

A self-testing circuit is presented, i.e., a circuit able to signal out any inner fault. It is a 16-bit serial-parallel multiplier, based on a 2-bit Booth algorithm; data are coded in two's complement. The use of a rather cheap self-testing technique based on parity predicting results in the realization of a `self-testing-only' circuit requiring only about 25 percent extra silicon area. This realization permitted to study the feasibility of self-testing circuits. Critical points are also pointed out, such as the testing of I/O pins.     

A 600-MHz VLIW DSP

A 600-MHz VLIW digital signal processor (DSP) delivers 4800 MIPS, 2400 (16 b) or 4800 (8 b) million multiply accumulates (MMACs) at 0.3 mW/MMAC (16 b). The chip has 64M transistors and dissipates 719 mW at 600 MHz and 1.2 V, and 200 mW at 300 MHz and 0.9 V. It has an eight-way VLIW DSP core, a two-level memory system, and an I/O bandwidth of 2.4 GB/s. The chip integrates a c64X DSP core with Viterbi and turbo decoders. Architectural and circuit design approaches to achieve high performance and low power using a semi-custom standard cell methodology, while maintaining backward compatibility, are described. The chip is implemented in a 0.13-/spl mu/m CMOS process with six layers of copper interconnect.     

A 70-MHz 8-bit/spl times/8-bit parallel pipelined multiplier in 2.5-/spl mu/m CMOS

A design is presented for an 8-bit/spl times/8-bit parallel pipelined multiplier for high speed digital signal-processing applications. The multiplier is pipelined at the bit level. The first version of this multiplier has been fabricated in 2.5-/spl mu/m CMOS technology. It has been tested at multiplication rates up to 70 MHz with a power dissipation of less than 250 mW. Clock skew, a major problem encountered in high-speed pipelined architectures, is overcome by the use of a balanced clock distribution network all on metal, and by proper use of clock buffers. These issues and the timing simulation of the pipeline design are discussed in detail. Possible extensions and improvements for achieving higher performance levels are discussed. The conversion of the two-phase clocking scheme to an inherently single-phase clock approach is one possible improvement. A design using this approach has been simulated at 75 MHz and is currently being fabricated.     

A carry-free 54b×54b multiplier using equivalent bitconversion algorithm

An equivalent bit conversion algorithm (EBCA) is proposed to eliminate the need for final carry propagation in the redundant binary (RB) to normal binary (NB) conversion step for RB multiplication. The multiplication process helps with the carry-free conversion step by eliminating certain combinations of RB product. When the EBCA is applied, conventional power-consuming carry-propagating adders are replaced by simple, minimum-sized carry-free converters, and the entire multiplication process can be made free of carry propagation from input to output. The method employed in this work reduces 40% of the total power and 30% of the total multiplication time in the final adder stage of traditional multipliers. The prototype fabricated in 0.35-μm CMOS demonstrates that the 54 b×54 b multiplier consumes only 53.4 mW at 3.3 V for 74-MHz operation     

A 600-MHz superscalar floating-point processor

The floating-point unit of a 600-MHz, out-of order, superscalar RISC Alpha microprocessor is described. The unit achieves 59 SpecFP95 and can transfer register data at up to 9.6 GB/s. It has two independent pipelines for multiply and add/subtract operations, with iterative divide and square-root circuits, and is fabricated in a 2.2-V, 0.35-μm CMOS process     

A low-power 16×16-b parallel multiplier utilizingpass-transistor logic

This paper describes a low-power 16×16-b parallel very large scale integration multiplier, designed and fabricated using a 0.8 μm double-metal double-poly BiCMOS process. In order to achieve low-power operation, the multiplier was designed utilizing mainly pass-transistor (PT) logic circuits. The inherent nonfull-swing nature of PT logic circuits were taken full advantage of, without significantly compromising the speed performance of the overall circuit implementation. New circuit implementations for the partial product generator and the partial-product addition circuitry have been proposed, simulated, and fabricated. Experimental results showed that the worst case multiplication time of the test chip is 10.4 ns at a supply voltage of 3.3 V, and the average power dissipation is 38 mW at a frequency of 10 MHz     

A 500-MHz 8-bit D/A converter

An ultrafast monolithic 8-bit DAC is designed and fabricated. To realize this DAC, a new high-speed conversion technique, referred to as the data multiplexing method, and a variation of the segmented DAC (J.A. Shoeff, 1979) for low glitch are developed. The DAC is fabricated with shallow-groove-isolated 3-/spl mu/m VLSI technology with peak f/SUB T/'s of 4.5 GHz. An experimental 8-bit DAC features a conversion rate of over 500 MHz, a full-scale settling time to 1% of 2 ns, rise/fall times of 0.6 ns, and a glitch energy of 20 ps-V without input latches or a deglitcher.     

A 15-ns 32×32-b CMOS multiplier with an improved parallelstructure

A high-speed 32×32-b parallel multiplier with an improved parallel structure using 0.8-μm CMOS triple-level-metal technology is discussed. A unit adder, a 4-2 compressor, enhances the parallelism of the multiplier array. A 25% reduction in the propagation delay time is achieved by using the compressor. The multiplier contains 27704 transistors with a 2.68-×2.71-mm² die area. The multiplication time is 15 ns at 5 V with a power dissipation of 277 mW at 10-MHz operation. The triple-level-metal interconnection technology reduces the multiplier layout area. Compared with double-level-metal technology, a 27% chip size reduction is achieved     

A 200-MHz IF 11-bit fourth-order bandpass ΔΣ ADC inSiGe

This paper demonstrates the design of an integrated fourth-order bandpass sigma-delta converter, which is capable of digitizing a 200-kHz band at 200 MHz with 11-bit accuracy. The converter has been successfully fabricated in a 50-GHz SiGe bipolar technology, and the modulator consumes 21 mA at 3 V. The converter is aimed at the digitization of wireless signals at a high first intermediate frequency with a wide dynamic range     

A 6.75 ns 16×16 bit multiplier in single-level-metal CMOStechnology

A 16×16 bit multiplier integrated circuit fabricated in a CMOS technology having only one level of metallization is described. Microarchitecture for the multiplier has been optimized to balance the delays in different sections of the chip. A typical multiplication time of 6.75 ns at 3.3 V power supply has been measured, and better results are expected from a process optimized for 0.5 μm devices     

A 200-MHz complex number multiplier using redundant binaryarithmetic

Modern digital communication systems rely heavily on baseband signal processing for in-phase and quadrature (I-Q) channels, and complex number processing in low-voltage CMOS has become a necessity for channel equalization, timing recovery, modulation, and demodulation. In this work, redundant binary (RB) arithmetic is applied to complex number multiplication for the first time so that an N-bit parallel complex number multiplier can be reduced to two RE multiplications (i.e., an addition of N RB partial products) corresponding to real and imaginary parts, respectively. This efficient RE encoding scheme proposed can generate RB partial products with no additional hardware and delay overheads. A prototype 8-bit complex number multiplier containing 11.5 K transistors is integrated on 1.05×1.33 mm² using 0.8 μm CMOS. The chip consumes 90 mW with 2.5 V supply when clocked at 200 MHz     

A 100-MHz 4-mW four-quadrant BiCMOS analog multiplier

A four-quadrant analog multiplier based on a simple, very linear, and fast BiCMOS transconductor using MOS transistors operating in the triode region and NPN bipolar devices is presented. The four quadrant operation is obtained by crosscoupling-in a Gilbert-cell fashion-two transconductors with a third stage used to modulate the transconductances of the former two. A chip prototype of the multiplier has been integrated in a 1.2-μm BiCMOS process to validate the idea. It has been designed to achieve high linearity on both inputs: measured results show a total harmonic distortion (THD) of less than -40 dB with a 3-V peak-to-peak input signal at 5 MHz from a 5-V supply and an output -3 dB bandwidth of 100 MHz while dissipating 4 mW from a 3-V supply. The integrated chip prototype active area is 1 mm²     

A 64-bit 800-MHz insulated-gate CCD on InP

Sixty-four-bit 259-gate insulated gate buried-channel charge-coupled devices (CCD's) have been fabricated on semi-insulating InP using a planar ion implantation process. These 5-µm gate-length structures, exercised with sinusoidal clocks, have operated to a measurement-limited upper frequency of 800 MHz and exhibited average effective stored charge per unit area in their channels as high as 6 × 10¹²electrons cm^-2. Input-to-output delay-time measurements as a function of frequency clearly indicate proper CCD operation.