Developments in Nanostructured Cathode Materials for High‐Performance Lithium‐Ion Batteries

Nanostructured materials lie at the heart of fundamental advances in efficient energy storage and/or conversion, in which surface processes and transport kinetics play determining roles. This Review describes some recent developments in the synthesis and characterization of nanostructured cathode materials, including lithium transition metal oxides, vanadium oxides, manganese oxides, lithium phosphates, and various nanostructured composites. The major goal of this Review is to highlight some new progress in using these nanostructured materials as cathodes to develop lithium batteries with high energy density, high rate capability, and excellent cycling stability resulting from their huge surface area, short distance for mass and charge transport, and freedom for volume change in nanostructured materials.     

A High‐Rate V2O5 Hollow Microclew Cathode for an All‐Vanadium‐Based Lithium‐Ion Full Cell

V₂O₅ hollow microclews (V₂O₅‐HMs) have been fabricated through a facile solvothermal method with subsequent calcination. The synthesized V₂O₅‐HMs exhibit a 3D hierarchical structure constructed by intertangled nanowires, which could realize superior ion transport, good structural stability, and significantly improved tap density. When used as the cathodes for lithium‐ion batteries (LIBs), the V₂O₅‐HMs deliver a high capacity (145.3 mAh g^‐1) and a superior rate capability (94.8 mAh g^‐1 at 65 C). When coupled with a lithiated Li₃VO₄ anode, the all‐vanadium‐based lithium‐ion full cell exhibits remarkable cycling stability with a capacity retention of 71.7% over 1500 cycles at 6.7 C. The excellent electrochemical performance demonstrates that the V₂O₅‐HM is a promising candidate for LIBs. The insight obtained from this work also provides a novel strategy for assembling 1D materials into hierarchical microarchitectures with anti‐pulverization ability, excellent electrochemical kinetics, and enhanced tap density.     

Aktuelle Entwicklungen in der Züchtungstechnologie von CZ‐Si‐Kristallen

New systems technology for developing larger‐diameter Si wafers In the semiconductor and microelectronics industry, the idea of launching a new generation of larger‐diameter wafers is being discussed and driven forward primarily by operators of large production lines, who expect a productivity gain and cost advantage from this in their chip manufacturing. The process engineering requirements for growing large Si crystals with diameters of 300mm and 450mm mean significant demands and challenges for the suitable system technology. These new requirements cannot be fulfilled with a simple upgrade of the previous system technology. For this reason, a new development of a system generation for 300mm and 450mm Si crystals is required that differs from previous generations in its basic design, static construction and equipment and component handling. PVA TePla already has experience developing systems for 450mm wafers.     

Aktuelle Entwicklungen in der Zühtungstechnologie von CZ‐Si‐Kristallen

Current Developments in CZ Si Crystal Growing Technology The industrial growing of increasingly large and perfect silicon (Si) monocrystals for applications in microelectronics and photovoltaics requires continuous improvement of process control and growing technology. Continuous adaptation and optimization of system technology in terms of reliability, process flexibility and dimensioning are also necessary. The basic principles of industrial silicon crystal growing and the resultant requirements for the Si process andsystem technologies are described in the first part of this series of articles. The constantly increasing requirements for the performance and complexity of the electronic circuits (chips) in accordance with Moore's Law mean that the requirements for the perfection and dimensions of monocrystalline Si wafers and Si crystals are also continuously rising. After the introduction of the 300 mm Si wafer generation in recent years, the next Si wafer generation (450 mm) is therefore being discussed already. The technological and economic effects of these constantly increasing requirements for the necessary system technologies will be set out and discussed in the subsequent articles on the basis of current Si CZ crystal growing systems as well as new system concepts.     

Oxidizing Vacancies in Nitrogen‐Doped Carbon Enhance Air‐Cathode Activity

Oxidizing vacancies in nitrogen‐doped carbon have recently been reported to enhance the oxygen reaction activity of air cathodes, but their specific role has remained elusive and controversial. Herein, the critical role of oxidizing the vacancies in enhancing the oxygen reduction reaction for metal–air battery is identified with density functional theory. Deliberate introduction of oxygen‐enriched vacancies in nitrogen‐doped carbon is shown experimentally to provide superior oxygen reduction activity. In situ X‐ray powder diffraction gives direct observation of the oxygen reactions in a zinc–air battery catalyzed by vacancy‐enriched oxidized carbon; the intensity changes of the carbon peak show continuous chemisorption of oxygen intermediates on the carbon cathode during discharge. The air‐cathode performance is shown to exceed that with Pt/C+IrO₂ catalysts.     

Recent Developments in Top‐Emitting Organic Light‐Emitting Diodes

Organic light‐emitting diodes (OLEDs) have rapidly progressed in recent years due to their unique characteristics and potential applications in flat panel displays. Significant advancements in top‐emitting OLEDs have driven the development of large‐size screens and microdisplays with high resolution and large aperture ratio. After a brief introduction to the architecture and types of top‐emitting OLEDs, the microcavity theory typically used in top‐emitting OLEDs is described in detail here. Then, methods for producing and understanding monochromatic (red, green, and blue) and white top‐emitting OLEDs are summarized and discussed. Finally, the status of display development based on top‐emitting OLEDs is briefly addressed.     

Hollow Mesoporous Carbon Microparticles and Micromotors with Single Holes Templated by Colloidal Silica‐Assisted Gas Bubbles

A simple, new synthetic method that produces hollow, mesoporous carbon microparticles, each with a single hole on its surface, is reported. The synthesis involves unique templates, which are composed of gaseous bubbles and colloidal silica, and poly(furfuryl alcohol) as a carbon precursor. The conditions that give these morphologically unique carbon microparticles are investigated, and the mechanisms that result in their unique structures are proposed. Notably, the amount of colloidal silica and the type of polymer are found to hugely dictate whether or not the synthesis results in hollow asymmetrical microparticles, each with a single hole. The potential application of the particles as self‐propelled micromotors is demonstrated.     

Neue Vorvakuumpumpe: Schnelles Evakuieren dank Membran‐ Stabilisierungssystem. New roughing pump: Fast Evacuation thanks to Diaphragm Stabilization System

Diaphragm pumps are used at turbomolecular pumps to generate rough vacuum. They are characterized by high suction speed, which however deteriorate when the working pressure decreases. This is caused by the difference between the working pressure of the pump and the ambient pressure. The larger the pressure difference, the more the elastic diaphragm bulges, lowering the effective input volume of the pump. This problem is alleviated by a newly developed diaphragm stabilization system. Diaphragm roughing pumps equipped with this system pump down faster than pumps without the system. Due to the enhanced suction speed, they also ensure greater process reliability. The first application of the diaphragm stabilization system (patent applied for) is in a newly developed diaphragm roughing pump. This pump is driven by a compact, brushless DC motor with very great efficiency. The pump is available in 24‐volt DC and 90‐ to 264‐volt, 50/60‐Hz AC versions. OEM and portable versions are available.