Self-Propagating High-Temperature Synthesis of Ti3SiC2: I, Ultra-High-Speed Neutron Diffraction Study of the Reaction Mechanism

In situ neutron diffraction at 0.9 s time resolution was used to reveal the reaction mechanism during the self-propagating high-temperature synthesis (SHS) of Ti₃SiC₂ from furnace-ignited stoichiometric 3Ti + SiC + C mixtures. The diffraction patterns indicate that the SHS proceeded in five stages: (i) preheating of the reactants, (ii) the α→β phase transformation in Ti, (iii) preignition reactions, (iv) the formation of a single solid intermediate phase in <0.9 s, and (v) the rapid nucleation and growth of the product phase Ti₃SiC₂. No amorphous contribution to the diffraction patterns from a liquid phase was detected and, as such, it is unlikely that a liquid phase plays a major role in this SHS reaction. The intermediate phase is believed to be a solid solution of Si in TiC such that the overall stoichiometry is ∼3Ti:1Si:2C. Lattice parameters and known thermal expansion data were used to estimate the ignition temperature at 923 ± 10°C (supported by the α→β phase transformation in Ti) and the combustion temperature at 2320 ± 50°C.     

Interdiffusion Between Ti3SiC2–Ti3GeC2 and Ti2AlC–Nb2AlC Diffusion Couples

In this work, we report on the interdiffusion of Ge and Si in Ti₃SiC₂ and Ti₃GeC₂, as well as that of Nb and Ti in Ti₂AlC and Nb₂AlC. The interdiffusion coefficient, D _int, measured by analyzing the diffusion profiles of Si and Ge obtained when Ti₃SiC₂–Ti₃GeC₂ diffusion couples are annealed in the 1473–1773 K temperature range at the Matano interface composition (≈Ti₃Ge_0.5Si_0.5C₂), was found to be given by
D _int increased with increasing Ge composition. At the highest temperatures, diffusion was halted after a short time, apparently by the formation of a diffusion barrier of TiC. Similarly, the interdiffusion of Ti and Nb in Ti₂AlC–Nb₂AlC couples was measured in the 1723–1873 K temperature range. The D _int for the Matano interface composition, viz. ≈(Ti_0.5,Nb_0.5)₂AlC, was found to be given by
At 1773 K, the diffusivity of the transition metal atoms was ≈7 times smaller than those of the Si and Ge atoms, suggesting that the former are better bound in the structure than the latter.     

Effect of Vacuum Annealing on the Phase Stability of Ti3SiC2

The effect of vacuum annealing on the thermal stability and phase transition of Ti₃SiC₂ has been investigated by X-ray diffraction (XRD), neutron diffraction, synchrotron radiation diffraction, and secondary ion mass spectroscopy (SIMS). In the presence of vacuum or a controlled atmosphere of low oxygen partial pressure, Ti₃SiC₂ undergoes a surface dissociation to form nonstoichiometric TiC and/or Ti₅Si₃C _x that commences at ∼1200°C and becomes very pronounced at ≥1500°C. Composition depth profiling at the near surface of vacuum-annealed Ti₃SiC₂ by XRD and SIMS revealed a distinct gradation in the phase distribution of TiC and Ti₅Si₃C _x with depth.     

Self-Propagating High-Temperature Synthesis of Ti3SiC2: Study of the Reaction Mechanisms by Time-Resolved X-Ray Diffraction and Infrared Thermography

Ti₃SiC₂ is synthesized by self-propagating high-temperature synthesis (SHS) of elemental titanium, silicon, and graphite powders. The reaction paths and structure evolution are studied in situ during the SHS of the 3Ti+Si+2C mixture by time-resolved X-ray diffraction coupled with infrared thermography. The proposed reaction mechanism suggests that Ti₃SiC₂ might be formed from Ti–Si liquid phase and solid TiC _x . Finally, the effect of the powders starting composition on the Ti₃SiC₂ synthesis is studied. For the investigated initial mixtures, TiC _x is always formed as a major impurity together with the Ti₃SiC₂ phase.     

Synthesis of Ti3SiC2 Powders: Reaction Mechanism

Titanium silicon carbide (Ti₃SiC₂) and Ti₃SiC₂-based composite powders were synthesized by isothermal treatment in an inert atmosphere as a function of initial compositions (mixtures). A high content of TiC was obtained in the final product when the initial mixtures contained free carbon. The use of TiC as a reagent was unsuccessful in obtaining Ti₃SiC₂. High Ti₃SiC₂ conversion was found for the initial mixtures containing SiC as the main source for silicon and carbon. An initial mixture with a large excess of silicon, 3Ti/1.5SiC/0.5C, was needed to obtain high-purity Ti₃SiC₂. A reaction mechanism, where Ti₃SiC₂ nucleates on Ti₅Si₃C crystals and grows by long-range diffusion of Ti and C, is proposed. The reaction mechanism was proposed to be based on silicon loss during the formation of Ti₃SiC₂.     

Mechanical-Alloying-Assisted Synthesis of Ti3SiC2 Powder

Mechanical alloying (MA) has been used to synthesize Ti₃SiC₂ powder from the elemental Ti, Si, and C powders. The MA formation conditions of Ti₃SiC₂ were strongly affected by the ball size for the conditions used. MA using large balls (20.6 mm in diameter) enhanced the formation of Ti₃SiC₂, probably via an MA-triggered combustion reaction, but the Ti₃SiC₂ phase was not synthesized only by the MA process using small balls (12.7 mm in diameter). Fine powders containing 95.8 vol% Ti₃SiC₂ can be obtained by annealing the mechanically alloyed powder at relatively low temperatures.     

Fabrication and Microstructure Characterization of Ti3SiC2 Synthesized from Ti/Si/2TiC Powders Using the Pulse Discharge Sintering (PDS) Technique

Ti/Si/2TiC powders were prepared using a mixture method (M) and a mechanical alloying (MA) method to fabricate Ti₃SiC₂ at 1200°–1400°C using a pulse discharge sintering (PDS) technique. The results showed that the Ti₃SiC₂ samples with <5 wt% TiC could be rapidly synthesized from the M powders; however, the TiC content was always >18 wt% in the MA samples. Further sintering of the M powder showed that the purity of Ti₃SiC₂ could be improved to >97 wt% at 1250°–1300°C, which is ∼200°–300°C lower than that of sintered Ti/Si/C and Ti/SiC/C powders using the hot isostatic pressing (HIPing) technique. The microstructure of Ti₃SiC₂ also could be controlled using three types of powders, i.e., fine, coarse, or duplex-grained, within the sintering temperature range. In comparison with Ti/Si/C and Ti/SiC/C mixture powders, it has been suggested that high-purity Ti₃SiC₂ could be rapidly synthesized by sintering the Ti/Si/TiC powder mixture at relatively lower temperature using the PDS technique.     

Reinforcement of Hydroxyapatite Bioceramic by Addition of Ti3SiC2

Ti₃SiC₂/HAp composites with different Ti₃SiC₂ volume fractions were fabricated by spark plasma sintering (SPS) at 1200°C. The effects of Ti₃SiC₂ addition on the mechanical properties and microstructures of the composites were investigated. The bending strength and fracture toughness of the composites increased with increasing of Ti₃SiC₂ content, whereas the Vickers hardness decreased. The bending strength and fracture toughness reached 252±10 MPa and 3.9±0.1 MPa·m^1/2, respectively, with the addition of 50 vol% Ti₃SiC₂. The increases in the mechanical properties were attributed to the matrix strengthening and interactions between cracks and the Ti₃SiC₂ platelets.     

A- and B Site Cosubstituted Ba6−3xSm8+2xTi18O54Microwave Dielectric Ceramics

Tin (Sn) substitution into the B-site and Nd/Sn cosubstitution into the A- and B-sites were investigated in a Ba _{6−3 x} Sm_{8+2 x} Ti₁₈O₅₄solid solution ( x = 2/3). A small amount of tin substitution for titanium improved the temperature coefficient of resonant frequency (τ_f) but led to a decrease of the relative dielectric constant (ɛ) and the quality factor ( Qf ). The Ba_{6−3 x} Sm_{8+2 x} (Ti_{1− z} Sn_z)₁₈O₅₄-based tungsten-bronze phase became unstable for compositions with a tin content of ≥10 mol%, where BaSm₂O₄and Sm₂(Sn,Ti)₂O₇appeared, and finally, these phases became the major phases. On the other hand, Nd/Sn cosubstitution led to a good combination of high ɛ, high Qf , and near-zero τ_f. Excellent microwave dielectric properties were achieved in Ba_{6−3 x} (Sm_{1− y} Nd _y )_{8+2 x} (Ti_{1− z} Sn _z )₁₈O₅₄ceramics with y = 0.8 and z = 0.05 sintered at 1360°C for 3 h: ɛ= 82, Qf = 10 000 GHz, and calculated τ_f=+17 ppm/°C. The tolerance factor and electronegativity difference exhibited important effects on the microwave dielectric properties, especially the Qf value. A large tolerance factor and high electronegativity difference generally led to a higher Qf value.     

Toughening of SiC with Ti3SiC2 Particles

Composites in the SiC–TiC–Ti₃SiC₂ system were synthesized using reactive hot pressing at 1600°C. The results indicate that addition of Ti₃SiC₂ to SiC leads to improved fracture toughness. In addition, high microhardness can be retained if TiC is added to the material. The best combination of properties obtained in this study is K _{I c} =8.3 MPa·m^1/2 and H _v=17.6 GPa. The composition can be tailored in situ using the decomposition of Ti₃SiC₂. Ti₃SiC₂ decomposed rapidly at temperatures above 1800°C, but the decomposition could be conducted in a controlled manner at 1750°C. This can be used for synthesis of fully dense composites with improved properties by first consolidating to full density a softer Ti₃SiC₂-rich initial composition, and then using controlled decomposition of Ti₃SiC₂ to achieve the desired combination of microhardness and fracture toughness.     

Titanium Silicon Carbide Pest Induced by Nitridation

The thermal stability of bulk Ti₃SiC₂ in high-purity nitrogen was investigated. It was surprising to observe that Ti₃SiC₂ underwent rapid and catastrophic disintegration above 1300°C, although this material was thermally stable below this temperature. This degradation was unexpected and extremely serious, and has been termed "Ti₃SiC₂ pest." This phenomenon was related to the volume change associated with the formation of mixtures of TiC _x , Ti(C, N) _x , and TiN, which caused internal tensile stresses and cracked the resulting layers. "Ti₃SiC₂ pest" could be prevented by increasing oxygen partial pressure in nitrogen.     

Thermal Expansion of Polycrystalline Ti3SiC2 in the 25°–1400°C Temperature Range

We measured the volume thermal expansion of Ti₃SiC₂ from 25° to 1400°C using high-temperature X-ray diffraction using a resistive heated cell. A piece of molybdenum foil with a 250 μm hole contained the sample material (Ti₃SiC₂+Pt). Thermal expansion of the polycrystalline sample was measured under a constant argon flow to prevent oxidation of Ti₃SiC₂ and the molybdenum heater. From the lattice parameters of platinum (internal standard), we calculated the temperature by using thermal expansion data published in the literature. The molar volume change of Ti₃SiC₂ as a function of temperature in °C is given by: V _M (cm³/mol)=43.20 (2)+9.0 (5) × 10⁻⁴ T +1.8(4) × 10⁻⁷ T ². The temperature variation of the volumetric thermal expansion coefficient is given by: α_v (°C⁻¹)=2.095 (1) × 10⁻⁵+7.700 (1) × 10⁻⁹ T . Furthermore, the results indicate that the thermal expansion anisotropy of Ti₃SiC₂ is quite mild in accordance with previous work.     

Processing and Mechanical Properties of Ti3SiC2: II, Effect of Grain Size and Deformation Temperature

In this article, the second part of a two-part study, we report on the mechanical behavior of Ti₃SiC₂. In particular, we have evaluated the mechanical response of fine-grained (3–5 μm) Ti₃SiC₂ in simple compression and flexure tests, and we have compared the results with those of coarse-grained (100–200 μm) Ti₃SiC₂. These tests have been conducted in the 25°–1300°C temperature range. At ambient temperature, the fine- and coarse-grained microstructures exhibit excellent damage-tolerant properties. In both cases, failure is brittle up to ∼1200°C. At 1300°C, both microstructures exhibit plastic deformation (>20%) in flexure and compression. The fine-grained material exhibits higher strength compared with the coarse-grained material at all temperatures. Although the coarse-grained material is not susceptible to thermal shock (up to 1400°C), the fine-grained material thermally shocks gradually between 750° and 1000°C. The results presented herein provide evidence for two important aspects of the mechanical behavior of Ti₃SiC₂: (i) inelastic deformation entails basal slip and damage formation in the form of voids, grain-boundary cracks, kinking, and delamination of individual grains, and (ii) the initiation of damage does not result in catastrophic failure, because Ti₃SiC₂ can confine the spatial extent of the damage.     

Processing and Mechanical Properties of Ti3SiC2: I, Reaction Path and Microstructure Evolution

In this article, the first part of a two-part study, we report the reaction path and microstructure evolution during the reactive hot isostatic pressing of Ti₃SiC₂, starting with titanium, SiC, and graphite powders. A series of interrupted hot isostatic press runs have been conducted as a function of temperature (1200°–1600°C) and time (0–24 h). Based on X-ray diffractometry and scanning electron microscopy, at 1200°C, the intermediate phases are TiC _x and Ti₅Si₃C _x . Fully dense, essentially single-phase samples are fabricated in the 1450°–1700°C temperature range. The time-temperature processing envelope for fabricating microstructures with small (3–5 μm), large (∼200 μm), and duplex grains, in which large (100–200 μm) Ti₃SiC₂ grains are embedded in a much finer matrix, is delineated. The microstructure evolution is, to a large extent, determined by (i) the presence of unreacted phases, mainly TiC _x , which inhibits grain growth; (ii) a large anisotropy in growth rates along the c and a directions (at 1450°C, growth normal to the basal planes is about an order of magnitude smaller than that parallel to these planes; at 1600°C, the ratio is 4); and (iii) the impingement of grains. Ti₃SiC₂ is thermally stable under vacuum and argon atmosphere at temperatures as high as 1600°C for as long as 24 h. The influence of grain size on the mechanical properties is discussed in the second part of this study.     

Synthesis and Reaction Mechanism of Ti3SiC2 by Mechanical Alloying of Elemental Ti, Si, and C Powders

Formation of titanium silicon carbide (Ti₃SiC₂) by mechanical alloying (MA) of Ti, Si, and C powders at room temperature was experimentally investigated. A large amount of granules less than 5 mm in size, consisting of Ti₃SiC₂, smaller TiC particles, and other silicides, have been obtained after ball milling for only 1.5 h. The effect of excess Si in the starting powders on the formation of Ti₃SiC₂ was studied. The formation mechanism of Ti₃SiC₂ was analyzed. It is believed that a mechanically induced self-propagating reaction is ignited during the MA process. A possible reaction mechanism was proposed to explain the formation of the final products.     

Solid Solubility and Polymorphism in the System Sr2SiO4-Sr2GeO4-Ba2GeO4-Ba2SiO4

The reciprocal salt pair Sr₂SiO₄-Sr₂GeO₄-Ba₂GeO₄-Ba₂SiO₄ was investigated using X-ray powder diffraction and DTA. Unlimited solubility in the low-K₂SO₄ structure type (α') occurs throughout the system above 85°C. The nonlinear changes of some lattice constants of the solid solutions are discussed. A stable monoclinic low-temperature (β) form of Sr₂SiO₄ was found which converts reversibly to the high-temperature α'-modification at 85°C. The enthalpy of the β-α' transition is 51 cal/mol. In the reciprocal salt pair the β-form solid solutions occur in a very narrow region below 85°C.     

Cyclic Fatigue-Crack Growth and Fracture Properties in Ti3SiC2 Ceramics at Elevated Temperatures

The cyclic fatigue and fracture toughness behavior of reactive hot-pressed Ti₃SiC₂ ceramics was examined at temperatures from ambient to 1200°C with the objective of characterizing the high-temperature mechanisms controlling crack growth. Comparisons were made of two monolithic Ti₃SiC₂ materials with fine- (3–10 μm) and coarse-grained (70–300 μm) microstructures. Results indicate that fracture toughness values, derived from rising resistance-curve behavior, were significantly higher in the coarser-grained microstructure at both low and high temperatures; comparative behavior was seen under cyclic fatigue loading. In each microstructure, Δ K _th fatigue thresholds were found to be essentially unchanged between 25° and 1100°C; however, there was a sharp decrease in Δ K _th at 1200°C (above the plastic-to-brittle transition temperature), where significant high-temperature deformation and damage are first apparent. The substantially higher cyclic-crack growth resistance of the coarse-grained Ti₃SiC₂ microstructure was associated with extensive crack bridging behind the crack tip and a consequent tortuous crack path. The crack-tip shielding was found to result from both the bridging of entire grains and from deformation kinking and bridging of microlamellae within grains, the latter forming by delamination along the basal planes.     

Tin Substitution for Titanium in Ba6−3xNd8+2xTi18O54 Microwave Dielectric Ceramics

Tin (Sn) substitution for titanium (Ti) was investigated in Ba_{6−3 x} Nd_{8+2 x} Ti₁₈O₅₄ ( x =1/2, 2/3, and 3/4) ceramics. A small amount ( z <0.1) of Sn substitution resulted in Ba_{6−3 x} Nd_{8+2 x} (Ti_{1− z} Sn _z )₁₈O₅₄ solid solutions, and some secondary phases were observed with increasing Sn content. A small amount of Sn substitution improved the Q f value significantly, while, due to the formation of secondary phases, the Q f value degraded sharply for larger Sn content. The relative dielectric constant (ɛ_r) decreased with increasing Sn-content, while the temperature coefficient of resonant frequency (τ_f) generally decreased, although an obvious fluctuation was observed for x =3/4.     

Structure and Microwave Dielectric Properties of Hexagonal Ba[Ti1−x(Ni1/2W1/2)x]O3 Ceramics

Microwave dielectric ceramics with the composition of Ba[Ti_{1− x} (Ni_1/2W_1/2) _x ]O₃ ( x =0.4–0.6) were prepared by a solid-state reaction method. The evolution of the crystalline phases was investigated by X-ray powder diffraction analysis. A cubic-to-hexagonal phase transition occurred between 1000° and 1300°C. The phase transition is irreversible; thus, the hexagonal phase remains stable at room temperature. The X-ray powder diffraction data for x =0.5 were refined using the Rietveld method. It was identified as a h -BaTiO₃-type hexagonal perovksite with the space group of P 6₃/ mmc . It also reveals that random occupancy of Ti⁴⁺ and W⁶⁺ ions occurs in the B-site substructures, whereas Ni²⁺ ions exclusively occupy the octahedral site in the corner-sharing octahedron. The dielectric properties of dense-sintered ceramics were characterized at microwave frequencies. With an increase in x from 0.4 to 0.6, the Q × f value increased from 26 700 to 42 000 GHz, whereas ɛ_r decreased from 29.8 to 20.0, and τ_f from +6.5 to −9.9 ppm/°C.     

Development of Nano-Composite Microstructures in ZrO2-Al2O3 via the Solution Precursor Method

Aqueous mixtures of zirconium acetate and aluminum nitrate were pyrolyzed and crystallized to form a metastable solid solution, Zr_{1- x} Al _x O_{2− x /2} ( x < 0.57). The initial, metastable phase partitions at higher temperatures to form two metastable phases, viz., t −ZrO₂+γ-Al₂O₃ with a nano-scale microstructure. The microstructural observations associated with the γ- →α-Al₂O₃ phase transformation in the t -ZrO₂ matrix are reported for compositions containing 10, 20, and 40 mol% A1₂O₃. During this phase transformation, the α-Al₂O₃ grains take the form of a colony of irregular, platelike grains, all with a common crystallographic orientation. The plates contain ZrO₂ inclusions and are separated by ZrO₂ grains. The volume fraction of A1₂O₃ and the heat treatment conditions influence the final microstructure. At lower volume fractions of A1₂O₃, the colonies coarsen to single, irregular plates, surrounded by polycrystalline ZrO₂. Interpenetrating microstructures produced at high volume fractions of A1₂O₃ exhibit very little grain growth for periods up to 24 h at 1400°C.