带有氧化钨涂层的ITO平面电极在LB系列电解液中的阻抗分析

电致变色实验显示1mol／L六氟磷酸锂与碳酸乙烯酯、碳酸二甲酯、碳酸二乙酯和碳酸甲乙酯所混合形成的电解液（LB）系列是一类非常节能的电致变色电解液，它们能用很小的充电电流（20μA／cm^2）使得氧化钨薄膜获得更长久、更好的变色性．研究氧化钨薄膜在LB系列电解液中的交流阻抗特性，有助于更好地理解氧化钨薄膜的变色性能．文中研究了带有氧化钨薄膜层的ITO平面电极处于LB系列电解液中的阻抗谱，分别得出了氧化钨薄膜和ITO电极的等效电路；测算出氧化薄膜的常相位角元件、薄膜电阻、韦伯电阻以及与ITO电极有关的电双层电容和电极电荷转移电阻．证实了LB315是性能优良的电解液．     

电解液对TiO_2薄膜电极光电化学性能的影响

本文先用直流磁控溅射法分别在ITO导电玻璃基底上沉积TiO2和TiN二种纳米薄膜,再在500℃的马弗炉氧化性气氛下进行退火处理,制得TiO2/ITO和TiO2-xNx/ITO薄膜电极。样品的结构和成分用XRD和XPS进行表征。然后分别采用pH=10的Na2CO3/NaHCO3缓冲溶液和1M KOH水溶液作为电解液,在三电极体系中用线性扫描伏安法（LSV）和电流时间曲线（i-t）法测定二种薄膜电极在光照和暗态下的光电化学性能。研究结果表明：以1M KOH水溶液作为电解液比pH=10的Na2CO3/NaHCO3缓冲溶液作为电解液更有利于样品发挥其光催化活性;同时,TiO2-xNx/ITO薄膜电极比TiO2/ITO具有更好的光电化学性能。     

WO3电致变色薄膜制备过程中光学膜厚测量监控技术的研究

采用真空电子束蒸发方法制备WO3电致变色薄膜过程中，利用极值法光学膜厚测量技术监控薄膜的光学特性，对不同光学膜厚的WO3薄膜的原始态、着色态和退色态的光谱特性进行了对比分析。测试采用二电极恒电压方法，用分光光度计实时测量透过率的变化。结果证明以ITO玻璃作为比较片，极值法监控薄膜光学膜厚，当反射率达到第一极小值，即透过率达到第一极大值时，WO3薄膜得到最好的综合电致变色特性。     

中频磁控溅射制备氧化钨薄膜及电致变色性能研究

采用中频磁控溅射方法,在氧化铟(ITO)玻璃上采用氧化钨(WO3)陶瓷靶沉积薄膜,研究溅射气压对WO3薄膜结构与光学性能的影响规律,并对其电致变色行为进行了探讨.采用X射线衍射(XRD)和扫描电子显微镜(SEM)分析了WO3薄膜的成分结构和表面形貌,紫外可见分光光度计和电化学工作站对薄膜的光调制性能、电致变色伏安特性、...     

不连续Pt薄膜对ITO薄膜气敏特性的影响

在320℃时,如氧化铟锡(ITO)薄膜暴露在乙醇气氛中则其电阻急剧下降。利用直流平面磁控反应溅射的方法在约1Pa的氧与氩的混合气体中溅射铟锡合金制备了ITO薄膜。如果在ITO薄膜表面沉积一层不连续的Rt膜,薄膜对乙醇蒸汽的检测灵敏度大大提高,而且工作温度下降。本文就制备工艺对薄膜检测灵敏度的影响做了一些探讨,并且对Rt膜的作用进行了讨论。     

磁控溅射制备ZrN_x薄膜离子导体性能研究

采用射频反应磁控溅射工艺,以纯Zr为靶材,在WO3/ITO/Glass基片上采用不同工艺参数沉积ZrNx薄膜,用紫外-可见分光光度计、循环伏安法、X射线衍射仪、扫描电镜等研究了ZrNx薄膜的离子导电性能。研究结果表明,所制备的ZrNx薄膜为非晶态,ZrNx/WO3/ITO/Glass复合膜的光学调节范围最大达57%以上,在离子传导过程中表现出良好的离子导电性能。     

射频磁控溅射法制备Al2(WO4)3薄膜和负热膨胀性能研究

采用WO3和Al2O3陶瓷靶材,以双靶交替射频磁控溅射法,在石英基片上沉积制备了Al2（WO4）3薄膜。利用X射线衍射仪（XRD）、扫描电子显微镜（SEM）,研究了退火温度对Al2（WO4）3薄膜的相组成和表面形貌的影响,采用表面粗糙轮廓仪和划痕仪测量薄膜厚度,探索了薄膜的制备工艺以及薄膜与基片的结合力,采用高温X射线衍射和晶胞参数指标化软件,初步研究了薄膜热膨胀特性。实验结果表明：磁控溅射沉积制备的这种薄膜为非晶态,表面平滑、致密,随着热处理温度的升高,薄膜开始结晶且膜层颗粒增大,在950℃热处理10min后得到Al2（WO4）3薄膜,薄膜与基片的结合力为13．6N,薄膜物质热膨胀特性呈各向异性。     

氧等离子体处理对氧化铟锡表面化学状态影响的ADXPS研究

利用变角X射线光电子谱对氧等离子体处理前后氧化铟锡ITO薄膜的表面化学状态进行了表征,实验发现用溶剂清洗之后的ITO薄膜表面存在一层厚度大约为0．7nm的非导电碳氢化合物污染层,氧等离子体处理方法可有效地消除C污染,而残存的少量污染C被部分氧化形成含羰基和基的化学物种,氧等离子体处理不仅提高了约5．0nm深度范围内的ITO薄膜表层中O的总体含量,更重要的是提高了膜层中O2－离子氧种的含量,改变了膜层化学结构,使得ITO薄膜表面的导电性能降低,同时改善了整个表面层化学结构的均匀性。     

WO_3薄膜的微观结构与电致变色机制研究

采用直流反应磁控溅射方法在ITO导电玻璃上沉积了WO3薄膜,研究了靶基距对其微结构和电致变色性能的影响,利用XRD、SEM和XPS对薄膜的微结构和成分进行了表征。通过可见光透射谱对样品的电致变色性能进行了研究,并且讨论了WO3薄膜电致变色性能与其微结构、价态变化之间的关系。发现靶基距为7cm的情况下沉积得到的WO3薄膜呈非晶态,薄膜有更多的孔隙,有利于Li+的抽取,进而显示出较好的电致变色性能。反应溅射制备的WO3薄膜中W是W6+价态,颜色为透明状,当发生着色反应时,随着薄膜中Li+成分增加,薄膜颜色变为蓝色,薄膜中W原子为W6+和W5+的混合价态。认为其电致变色的行为是由于Li+和e-在薄膜中的注入和拉出引起的W6+和W5+发生转化所致。     

工艺参数对磁控溅射TaOx薄膜离子导体性能的影响

采用射频反应磁控溅射工艺,以纯钽为靶材,在WO3/ITO/Glass基材上制备TaOx薄膜,研究氧含量、溅射功率等制备工艺参数对TaOx薄膜性能的影响.用三位电极法和透射光谱等方法检测薄膜的离子导电性能,结果表明:所得的TaOx薄膜主要为非晶态,在一定范围内,在较低的溅射功率和较低的氧含量实验条件下制备的TaOx薄膜具有较好的离子导电性能.     

氧化钨多孔薄膜的制备及光学性质

多孔结构可以使氧化钨薄膜的气敏、电致变色等性能得到增强,但目前多孔氧化钨薄膜的制备仍存在困难。本文采用W和Al双靶磁控溅射的方法得到了W-Al合金薄膜后,把合金薄膜浸入NaOH溶液中处理,其中的Al被腐蚀同时W被氧化,从而得到了多孔的氧化钨薄膜。利用SEM观察多孔氧化钨薄膜样品的表面形貌,用XPS分析样品中W的价态,用XRD分析样品的晶体结构,用紫外-可见-近红外分光光度计测量样品的光学性质。结果显示:制得的多孔氧化钨薄膜的平均孔径在100nm左右,呈海绵状疏松结构;薄膜中W的价态以+5价为主;薄膜属于非晶相;在可见光区域,多孔氧化钨薄膜具有较高的透过率,而在近红外区域则具有近似平直的透过率曲线。     

Liquid / liquid ion-transfer processes at the dioctylphosphoric acid (N,N-didodecyl-N',N'-diethylphenylenediamine) / water (electrolyte) interface at graphite and mesoporous TiO2 substrates

Biphasic electrode systems are studied for the case of the oxidation of the water-insoluble liquid N,N-didodecyl-N',N'-diethylphenylenediamine (DDPD) neat and dissolved in bis(2-ethylhexyl) phosphate (HDOP) and immersed in aqueous electrolyte media. The oxidation process in the absence of HDOP is accompanied by transfer of the anion (perchlorate or phosphate) from the water into the organic phase. However, in the presence of HDOP, oxidation is accompanied by proton exchange instead. This electrochemically driven proton exchange process occurs over a wide pH range. Organic microdroplet deposits of DDPD in HDOP at basal plane pyrolytic graphite electrodes are studied by voltammetric techniques and compared in their behavior to organic microphase deposits in mesoporous TiO2 thin films. The mesoporous TiO2 thin film acts as a host for the organic liquid and provides an alternative biphasic electrode system compared to the random microdroplet/graphite system. Two types of mesoporous TiO2 thin-film electrodes, (i) a 300-400-nm film on ITO and (ii) a 300-400-nm film on ITO sputter-coated with a 20-nm porous gold layer, are investigated.     

Resistive switching behavior and multiple transmittance states in solution-processed tungsten oxide

In this work, a tungsten oxide (WO(x)) film is prepared using a thiourea-assisted solution process. We demonstrate a device composed of fluorine doped tin oxide (FTO)-glass/WO(x)/electrolyte/indium-tin oxide (ITO)-glass stacking electrochromic (EC) structure and Al electrodes that are locally patterned and interposed between the WO(x) film and electrolyte, which form an Al(top electrode)/WO(x)/FTO(bottom electrode) resistance random access memory (RRAM) unit. According to transmission electron microscopy and X-ray photoelectron spectroscopy analyses, the WO(x) film contains nanosize pores and metallic-tungsten nanoclusters which are scattered within the tungsten oxide layer and concentrated along the interface between the Al electrode and WO(x) film. With application of voltage to the ITO electrode, multiple transmittance states are achieved for the EC unit due to the different quantity of intercalated Li ions in the WO(x) film. As for the Al/WO(x)/FTO RRAM unit, a bipolar nonvolatile resistive switching behavior is attained by applying voltage on the Al top electrode, showing electrical bistability with an ON/OFF current ratio up to 1 × 10(4).     

Effects of self-erasing discharge on panel-aging characteristics in AC plasma display panel

This paper investigates the changes in the surface morphology of the MgO thin film on the ITO and bus electrodes in ac plasma display panel under various sustain voltages during the panel-aging process. It is found that the achievement in the stable discharge in an AC-PDP by means of the panel-aging process strongly depends on whether the surface morphologies of the MgO thin film are identical on both the ITO and bus electrodes. It is also found that the self-erasing discharge during the panel-aging process is not effective in obtaining the uniform surface morphology of the MgO thin film on the ITO and bus electrodes, due to the difference in the amount of ion bombardment on the ITO and bus electrodes caused by the erasing of the wall charges during the self-erasing discharge. These experimental results are confirmed by monitoring the three-dimensional IR emission and simulating the wall charge distribution, the electric field strength, and the impulse on the MgO layer.     

Electrochemical polymerization of an aniline-terminated self-assembled monolayer on indium tin oxide electrodes and its effect on polyaniline electrodeposition

Indium tin oxide (ITO) transparent electrodes were surface modified by a self-assembled monolayer of N-phenyl-γ-aminopropyl-trimethoxysilane (PAPTS). Cyclic voltammetry of the PAPTS monolayer in aniline-free aqueous electrolyte showed the typical shape of a surface-confined monomer, due to the oxidation of the aniline moieties. This process resulted in a two-dimensional polyaniline film with uniform thickness of 1.3 nm, as measured by atomic force microscopy. X-ray photoelectron and UV–visible spectroscopic techniques confirm the formation of a conjugated polymer film. The influence of the surface modification of ITO electrodes on polyaniline electrochemical deposition was also studied. The initial oxidation rate of aniline increased in the PAPTS-modified ITO electrodes, although the overall film formation rate was lower than that of unmodified ITO electrodes. The morphology of the electrodeposited polyaniline films on PAPTS-modified and unmodified ITO electrodes was studied by atomic force microscopy. Films of smaller grain were grown in the PAPTS-modified ITO as compared to films grown on unmodified ITO. A blocking effect due to the propyl spacer is proposed to explain the reduced electron transfer in PAPTS-modified electrodes.     

Preparation of inorganic solid state thin film for electrochromic application

All oxide solid state ITO (indium tin oxide)/Li_yWO_3−x/Li_1−zMn₂O₄/ITO stacked structure was deposited on a silica glass substrate by pulsed laser deposition for its electrochromic application. The Li doped amorphous tungsten trioxide Li_yWO_3−x thin film prepared at room temperature and in oxygen pressure of 7 Pa got the color of blue due to the mixture valence state of tungsten. We found that the amorphous Li_1−zMn₂O₄ thin film was suitable for the electrochromic application in spite of the low ion conductivity along in-plane direction. The ITO electrode thin film deposited at room temperature showed the relatively high transmittance and the usable conductivity. The transmittance at a wavelength of 750 nm for the ITO/Li_yWO_3−x/Li_1−zMn₂O₄/ITO stacked film changed from 50% to 80% by the applied voltage, while the transmittance at around 450 nm did not change. The blue-colored electrochromic property could be observed for the all oxide solid state film.     

Polycrystalline growth and recrystallization processes in sputtered ITO thin films

Indium tin oxide (ITO) thin films with various thicknesses from 170 to 700 nm have been grown onto unheated glass substrates by sputtering from ceramic target, and subsequently annealed in vacuum at temperatures ranging from 250 to 350 °C. The structure, morphology and electro-optical characteristics of the ITO samples have been analyzed by X-ray diffraction, atomic force microscopy, four-point electrical measurements and spectrophotometry. Polycrystalline ITO growth has been found varying with film thickness. The thickness also determined the recrystallization achievable by annealing and the electro-optical thin film properties.     

Bistable electronic switching in poly(arylenephthalides)

Experimental and theoretical data show that the phenomenon of bistable switching in thin films of poly(arylenephthalides) (PAPs), which was reported previously, has an electronic nature and is related to the unique properties of PAP molecules. This phenomenon has been studied in metal-PAP-metal and ITO-PAP-ITO structures (ITO = indium tin oxide) with various thicknesses of the polymer film. First results are reported that demonstrate the principal possibility of using thin PAP films as a basis for resistive nonvolatile electronic memory cells. These data show that the bistable switching is related primarily to the electronic properties of the polymer film and is not influenced by the oxidation of electrodes and/or the growth of metal filaments from the electrodes.     

Quality enhancement of AZO thin films at various thicknesses by introducing ITO buffer layer

Due to the simultaneously superior optical transmittance and low electrical resistivity, transparent conductive electrodes play a significant role in semiconductor electronics. To enhance the electrical properties of these films, one approach is thickness increment which degrades the optical properties. However, a preferred way to optimize both electrical and optical properties of these layers is to introduce a buffer layer. In this work, the effects of buffer layer and film thickness on the structural, electrical, optical and morphological properties of AZO thin films are investigated. Al-doped zinc oxide (AZO) is prepared at various thicknesses of 100 to 300 nm on the bare and 100 nm-thick indium tin oxide (ITO) coated glass substrates by radio frequency sputtering. Results demonstrate that by introducing ITO as a buffer layer, the average values of sheet resistance and strain within the film are decreased (about 76 and 3.3 times lower than films deposited on bare glasses), respectively. Furthermore, the average transmittance of ITO/AZO bilayer is improved nearly 10% regarding single AZO thin film. This indicates that bilayer thin films show better physical properties rather than conventional monolayer thin films. As the AZO film thickness increases, the interplanar spacing, d₍₀₀₂₎, strain within the film and compressive stress of the film in the hexagonal lattice, decreases indicating the higher yield of AZO crystal. Moreover, with the growth in film thickness, carrier concentration and optical band gap (E_g) of AZO film are increased from 4.62?×?10¹⁹ to 8.21?×?10¹⁹ cm^?3 and from 3.55 to 3.62 eV, respectively due to the Burstein-Moss (BM) effect. The refractive index of AZO thin film is obtained in the range of 2.24–2.26. With the presence of ITO buffer layer, the AZO thin film exhibits a resistivity as low as 6?×?10^?4 Ω cm, a sheet resistance of 15 Ω/sq and a high figure of merit (FOM) of 1.19?×?10⁴ (Ω cm)^?1 at a film thickness of 300 nm. As a result, the quality of AZO thin films deposited on ITO buffer layer is found to be superior regarding those grown on a bare glass substrate. This study has been performed over these two substrates because of their significant usage in the organic light emitting diodes and photovoltaic applications as an enhanced carrier injecting electrodes.     

磁控溅射低温沉积ITO薄膜及其光电特性研究

采用直流反应磁控溅射法低温沉积ITO薄膜,用XRD、SEM和UV—Vis分别表征ITO薄膜的晶体结构、表面形貌及其紫外-可见光吸收谱,研究了氧分压、溅射功率及薄膜厚度等工艺参数对薄膜光电性能的影响,结果表明,氧分压过大时,ITO薄膜中有大量的位错和缺陷,使薄膜的电阻率变大,导电性变差;氧分压过小时,薄膜中将有大量氧空位产生,导致晶格变形,使电阻率增加。随着溅射功率增大,在相同时间内薄膜厚度增加,方块电阻减小,薄膜电阻率降低。随着薄膜厚度增加,制备的薄膜晶体结构相对完整,载流子浓度和迁移率逐渐增大,薄膜电阻率变小,进而对样品的光电性能产生明显影响。