A Symbolic Circuit Analysis-Oriented Algorithm for Finding a Common Tree of the Current and Voltage Graphs

A fundamental problem of symbolic analysis of electric networks when using the signal-flow (SFG) graph method is to find the common tree of the current and voltage graph ( and , respectively). In this paper we introduce a novel method in order to determine a common tree of both graphs, which may be used to obtain the symbolic network transfer function when carrying out the small-signal analysis of linear(ised) circuits.     

The Design of a 2-V 900-MHz CMOS Bandpass Amplifier

A 900 MHz low-power CMOS bandpassamplifier suitable for the applications of RFfront-end in wireless communication receiversis proposed and analyzed. In this design, thetemperature compensation circuit is used tostabilize the amplifier gain so that theoverall amplifier has a good temperaturestability. Moreover, the compact tunablepositive-feedback circuit is connected to theintegrated spiral inductor to generate thenegative resistance and enhance its value. The simple diode varactor circuit isadopted for center-frequency tuning. These twoimproved circuits can reduce the powerdissipation of the amplifier. An experimentalchip fabricated by 0.5 mdouble-poly-double-metal CMOS technologyoccupies a chip area of ; chip area. The measuredresults have verified the performance of thefabricated CMOS bandpass amplifier. Under a2-V supply voltage, the measured quality factoris tunable between 4.5 and 50 and the tunablefrequency range is between 845 MHz and 915 MHz. At , the measured is 20 dB whereas thenoise figure is 5.2 dB in the passband. Thegain variation is less than 4 dB in the rangeof 0–80^°C. The dc powerdissipation is 35 mW. Suitable amplifier gain,low power dissipation, and good temperaturestability make the proposed bandpass amplifierquite feasible in RF front-endapplications.     

A Fully Integrated, Low Noise and Low Power BiCMOS Front-end Readout System for Capacitive Detectors

Bipolar transistors are interesting for low noise front-end readout systems when high speed and low power consumption are required. This paper presents a fully integrated, low noise front-end design for the future Large Hadron Collider (LHC) experiments using the radiation hard SOI BiCMOS process. In the present prototype, the input-referred Equivalent Noise Charge (ENC) of 990 electrons (rms) for 12 pF detector capacitance with a shaping time of 25 ns and power consumption of 1.4 mW/channel has been measured. The gain of this front-end is 90 mV/MIP (Minimum Ionisation Particle: 1 fC) with non-linearity of less than 3% and linear input dynamic range is MIP. These results are obtained at room temperature and before irradiation. The measurements after irradiations by high intensity pion beam with an integrated flux of pions/cm² are also presented in this paper.     

BIBO Stability of D-Dimensional Filters

Consider the class of d-dimensional causal filters characterized by a d-variate rational function analytic on the polydisk . The BIBO stability of such filters has been the subject of much research over the past two decades. In this paper we analyze the BIBO stability of such functions and prove necessary and sufficient conditions for BIBO stability of a d-dimensional filter. In particular, we prove if a d-variate filter H(z) analytic on has a Fourier expansion that converges uniformly on the closure of , then H(z) is BIBO stable. This result proves a long standing conjecture set forth by Bose in [3].     

A Small Area Charge Sensitive Readout Chain with a Dual Mode of Operation

A charge sensitive readout chain has been designed and fabricated in acommercially available 0.8 m CMOS technology. The readout chain is optimizedfor pixel detectors measuring soft X-ray energies up to 20 KeV. In the first modean analog signal proportional to input charge is generated and processed in realtime. In the second mode a peak-and-hold operation is enabled and therelevant signal is processed in later time. This dual mode of operation iscontrolled by an external digital signal. The readout chain consists of a chargeamplifier, a shaper, an operational amplifier which can either operate as avoltage amplifier or a peak detector and an output buffer. Its area is . The gain at the shaper output is 378 mv/fC, theENC is 16 rms at 160 nsec shaping time. The overall gainis 557 mV/fC, the ENC is rms with 240 nsec peaking timeand 1.4 sec recovery time. The overall power dissipation is 1.5 mWatt with aload capacitance of 25 pF.     

Finite-Memory Systems

Let K be a field, k and n positive integers and let matrices with coefficients in K. For any function

A 5.8 GHz Low Noise Amplifier for Wireless LAN Applications in Silicon Bipolar Technology

A monolithic integrated low-noise amplifier for operation in the 5.8-GHzband is described. Two different versions have been implemented where the biasing wasadapted to allow operation over a different range of supply voltage. At 5-V, theamplifiers gain is about 17-dB, with a noise figure of 4.2-dB and 1-dB compressionpoint at –15-dBm input power. The circuits have been designed utilizing a0.6-micron silicon bipolar production technology, featuring npn transistors with and of about20-GHz.     

Current-Mode High Output Impedance Multifunction Filters Employing Minimum Number of FTFNs

In this study, five current-mode FTFN-based multifunction filters are proposed, which realize the same transfer functions in ideal case. All circuits employ two capacitors and three resistors. For each circuit R-C:C-R transformation increases the number of realization possibilities to ten. The proposed topologies simultaneously realize three basic filtering functions using minimum number of FTFNs and provide high output impedances that enable easy cascading in current mode. Sensitivity analysis of the filters show that they have low passive sensitivities, and of the filters are insensitive to current tracking errors, furthermore of the filters are insensitive to voltage tracking errors of the FTFNs. The proposed circuits do not require component matching condition except for notch and allpass responses and permit independent adjustment of without disturbing . Experimental and simulation results are given to verify the theoretical analyses.     

On the Use of Symbolic Analyzers in Circuit Synthesis

In this paper several examples of circuits obtained with an automatic synthesis algorithm will be shown. The algorithm, described in a companion paper [1] and outlined here for clarity, has been implemented in the Mathematica language. We applied the new algorithm to classical problems of inmittance synthesis, obtaining well known topologies and also non-reported structures. When the algorithm is applied to challenging new problems, novel and practically useful inmittances are synthesized.     

Statistical Design of the Four-MOSFET Structure

The statistical design of the four-MOSFET structure is presented in this paper. The quantitative measure of the effect of mismatch between the four transistors on nonlinearity and offset current is provided through contours. Statistical optimization of the transistor and values is demonstrated. The four-MOSFET structure was fabricated through the MOSIS 2 m process using MOS transistor Level-3 model parameters. Experimental results are included in the paper.     

Can One Control the Vibrations of a Drum?

This paper considers the problem of constructing feedback stabilizing controllers for the wave operator on ⁿ (more generally AR systems determined by a hyperbolic operator). In order to accomplish this, it must first clarify the notion of an input-output structure on a distributed system, as well as what it means to interconnect two such systems. Both these notions are shown to be consequences of a structure which generalizes the standard causal structure of lumped systems determined by the flow of time. Given this apparatus, the paper then constructs feedback controllers which stabilize the wave equation along directions given by a proper cone in ⁿ.     

A DDS Synthesizer with Digital Time Domain Interpolator

A DDS type circuit structure for producing numericallyprogrammable square wave clock signal is presented. The high speed D/Aconverter needed in conventional DDS systems is replaced by an tap delay line time domain interpolator thateffectively increases the sampling rate by a factor of . Thus the circuit can be used up to full clock rate withoutimage filtering. A prototype IC with clock frequency of 30 MHz, 5 bitinterpolator and SFDR of –40 dBc up to 10 MHz and –33 dBcup to 15 MHz has been designed and tested.     

A Low-Power 100 MHz Analog FIR Filter for PRML Equalization

This paper presents design of a low-power 100 MHz analog FIR filter for PRML equalization used in the read channel of hard disk drives. The chip consists of 16 channels to provide 15-tap FIR filter operation. By using rotating clocks for sample/hold operation with one dummy channel, timing constraints can be relieved, which results in low-power consumption. The chip incorporates the parallel array of sample-and-hold amplifiers for analog delay line. The sample-and-hold amplifier includes the open-loop unity-gain amplifier with gain-control circuit using replica-biasing scheme, which also improves uniformity among amplifiers. It was fabricated in a 0.8-m CMOS technology and consumes power of 200 mW for V power supply voltage.     

Optimizing Elliptic Filter Selectivity

The problem of determining the band-edge selectivity of elliptic filters and its optimization in filter design is considered. The band-edge selectivity is derived with respect to the -th order elliptic function. The selectivity formula embodies potential trade-offs in filter requirements for improving filter mangitude or delay response. Design examples are submitted in support of the theory. A simple proof describes the Chebyshev filter as an elliptic filter in the limit of infinite stopband corner frequency.     

Use of TCP Decoupling in Improving TCP Performance over Wireless Networks

We propose using the TCP decoupling approach to improve a TCP connection's goodput over wireless networks. The performance improvement can be analytically shown to be proportional to , where MTU is the maximum transmission unit of participating wireless links and HP_Sz is the size of a packet containing only a TCP/IP header. For example, on a WaveLAN [32] wireless network, where MTU is 1500 bytes and HP_Sz is 40 bytes, the achieved goodput improvement is about 350%. We present experimental results demonstrating that TCP decoupling outperforms TCP reno and TCP SACK. These results confirm the analysis of performance improvement.     

VLSI architecture for fast 2D discrete orthonormal wavelet transform

The discrete wavelet transform (DWT) provides a new method for signal/image analysis where high frequency components are studied with finer time resolution and low frequency components with coarser time resolution. It decomposes a signal or an image into localized contributions for multiscale analysis. In this paper, we present a parallel pipelined VLSI array architecture for 2D dyadic separable DWT. The 2D data array is partitioned into non-overlapping groups of rows. All rows in a partition are processed in parallel, and consecutive partitions are pipelined. Moreover, multiple wavelet levels are computed in the same pipeline, and multiple DWT problems can be pipelined also. The whole computation requires a single scan of the image data array. Thus, it is suitable for on-line real-time applications. For anN×N image, anm-level DWT can be computed in time units on a processor costing no more than , whereq is the partition size,p is the length of corresponding 1D DWT filters,C _m andC _a are the costs of a parallel multiplier and a parallel adder respectively, and a time unit is the time for a multiplication and an addition. Forq=N m, the computing time reduces to . When a large number of DWT problems are pipelined, the computing time is about per problem.     

Stoichiometry control of CdSx Se1−x and its effects on photoelectrical properties

The deviation y from stoichiometry of Cd_1+y (S_x Se_1−x) single crystals was controlled through the vapor growth process by regulating the sum of chalcogen partial pressure , and by keeping the pressure ratio constant in each vapor growth experiment. The dark electrical conductivity changed 10 orders of magnitude from low to high resistivity with increasing P_ps · However, the photoluminescence(PL) intensity did not show the obvious change and decreased gradually with increasing P_ps These results can be explained by an increase of acceptor-type native defects such as cadmium vacancy V_cd with increasing P_ps and it was confirmed that the deviation y from stoichiometry is effectively controlled under P_ps higher that P_ps =10 Torr, The vapor transport mechanism was also discussed.     

A Sub-Micron CMOS Programmable Charge Pump for Implantable Pacemaker

In pacemaker design the mainconcerns are reliability, functionality,operating life and miniaturization. Afundamental role in miniaturization is dueto the increased circuit integration; hencelow power circuit solutions that can beintegrated in sub-micron CMOS technology arehighly desirable. This work proposes avoltage multiplier suitable for pulse outputgeneration in an implantable pacemaker,implemented in a standard, low-cost CMOS 0.8 m technology. The circuit can operatewithin a supply voltage range of 2.8 V to 2V, corresponding to the voltage capabilityprovided by the single lithium iodine cell,ubiquitously used in pacemaker. Fineprogrammability of the output has beenachieved, thus allowing the choice of theoptimum tradeoff between stimulationefficacy and battery longevity. Moreover theproposed solution takes care of minimizingthe parasitic coupling and disturbancesbetween the charge pump and other blocks inthe system. Finally the measured steady statecurrent consumption is smaller than .     

Effects of substrate orientation and surface reconstruction on patterned substrate OMVPE of GaAs

Organometallic vapor phase epitaxial growth of GaAs on 320 nm high mesas was used to study the dependence of lateral growth upon the substrate misorientation from (100) and the mesa wall orientation on the substrate. GaAs (100) substrates were misoriented by 3° toward eight major crystallographic directions, consisting of the four nearest [111] and [110] directions. The mesa sidewalls were oriented either parallel to the 〈011〉 and 〈01 〉 directions or rotated by 45° to be parallel to the 〈001〉 and 〈010〉 directions. GaAs films were grown with TMGa and TBA at T=575°C. The lateral growth rates were up to 25 times higher than the vertical growth rate of 1.3 μm/hour. Optical microscopy and atomic force microscopy (AFM) showed that under the given growth conditions lateral growth off mesa sidewalls is most rapid in the 〈011〉 and/or 〈0 〉 directions and less in the perpendicular 〈01 〉 and 〈0 1〉 directions (lateral growth anisotropy). By raising the temperature to 625°C lateral growth in the 〈01 〉 -〈0 1〉 directions increased while it remained almost constant in the 〈011〉 -〈0 〉 directions. Published results show that the partial pressure of As also affects lateral growth. Differences in the lateral growth rates in the 〈011〉 and its opposite 〈0 〉 directions result from substrate misorientation but not from the orientation of the mesa walls on the substrate. Anisotropic lateral growth rates in different crystallographic directions appear to be caused by both, (1) 1-dimensional Ga diffusion defined by surface reconstruction, and (2) a relatively low energy barrier to atoms flowing over high-to-low terrace steps. A lateral growth model is proposed that describes anisotropic lateral growth at mesa sidewalls in terms of growth conditions and substrate misorientations. The model also explains the difference in the preferential lateral growth directions between MBE and OMVPE.