Formation of PbTe nanofilms by electrochemical atomic layer deposition (ALD)

This article describes optimization of a cycle for the deposition of lead telluride (PbTe) nanofilms using electrochemical atomic layer deposition (ALD). PbTe is of interest for the formation of thermoelectric device structures. Deposits were formed using an ALD cycle on Au substrates, one atomic layer at a time, from separate solutions, containing Pb²⁺ or HTeO₂⁺ ions. Single atomic layers were formed using surface limited reactions, referred to as underpotential deposition (UPD), so the deposition cycle consisted of alternating UPD of Te and Pb. The Pb deposition potential was maintained at −0.35 V throughout the 100 cycle-runs, while the Te deposition potential was ramped up from −0.55 V to −0.40 V over the first 20 cycles and then held constant for the remaining ALD cycles. Coulometry for the reduction of both Te and Pb indicated coverages near one monolayer, each cycle. Electron probe microanalysis (EPMA) indicated a uniform and stoichiometric deposit, with a Te/Pb ratio of 1.01. X-ray diffraction measurement showed that the thin films had the rock salt structure, with a preferential (2 0 0) orientation for the as formed deposits. No annealing was used. Infrared reflection absorption measurements of PbTe films formed with 50, 65, and 100 cycles indicated strong quantum confinement.     

Composition-dependent characterization and optimal control of electrodeposited Bi2Te3 films for thermoelectric application

A method to control composition of Bi₂Te₃ films by mass transfer manipulation has been developed. The film composition can be varied by a diffusion-controlled method, which is related to the change of Bi³⁺/HTeO₂⁺ ratios in a controlled diffusion layer. A homogeneous and dense film with precise chemical composition could thus be obtained under constant electrode polarization. Meanwhile, the solo dependence of film properties on composition change of both Te-rich and Bi-rich films were investigated. Firstly, the studies of XRD and FE-SEM showed that different Te contents in deposit would lead to different dimensions of unit cell and grain sizes. The Seebeck coefficient increased apparently when the Te content was over 60 at.% Te. Te-rich films had higher carrier concentration but slower mobility than Bi-rich films. Inverse relations were observed between carrier concentration and carrier mobility and between Seebeck coefficient and conductivity. Therefore, an optimal power factor of 7 × 10⁻⁴ W/m K² was realized near the stoichiometric Bi₂Te₃.     

Electrochemically deposited thermoelectric n-type Bi2Te3 thin films

Electrochemically deposited n-type BiTe alloy thin films were grown from nitric acid baths on sputtered Bi_xTe_y/SiO/Si substrates. The film compositions, which varied from 57 to 63 at.% Te were strongly dependent on the deposition conditions. Surface morphologies varied from needle-like to granular structures depending on deposited Te content. Electrical and thermoelectric properties of these electrodeposited Bi_xTe_y thin films were measured before and after annealing and compared to those of bulk Bi₂Te₃. Annealing at 250 °C in reducing H₂ atmosphere enhanced thermoelectric properties by reducing film defects. In-plane electrical resistivity was highly dependent on composition and microstructure. In-plane Hall mobility decreased with increasing carrier concentration, while the magnitude of the Seebeck coefficient increased with increasing electrical conductivity to a maximum of −188.5 μV/K. Overall, the thermoelectric properties of electrodeposited n-type BiTe thin films after annealing were comparable to those of bulk BiTe films.     

Solution-processed semiconducting aluminum-zinc-tin-oxide thin films and their thin-film transistor applications

We prepared aluminum-zinc-tin-oxide (AZTO) thin films by the solution spin-coating method and investigated their physical and electrical properties according to different incorporated amounts of Al. AZTO films annealed at 400 °C were amorphous. Though SnO₂ crystallites were detected in films annealed at temperatures higher than 500 °C, the number of crystallites decreased as the Al content increased. Thin films had a smooth and uniform surface morphology with an optical transmittance value higher than 92% in the visible range. Electrical conductivity and its temperature dependence varied markedly according to the amount of Al incorporated in the film. We therefore systematically investigated activation energies for carrier transport for each film composition. Thin-film transistors (TFTs) were fabricated using solution-processed AZTO as an active channel layer. The effects of the amount of Al incorporated in the thin film on TFT characteristics were also evaluated. The best device performance was observed for a TFT with a 5 mol%-Al-incorporated AZTO channel. Field effect mobility, subthreshold swing, and on/off ratio were approximately 0.24 cm² V⁻¹ s⁻¹, 0.69 V/dec, and 1.03×10⁶, respectively.     

Electrodeposition of P-type BixSb2−xTey thermoelectric film from dimethyl sulfoxide solution

The electrochemical behaviors of Bi(III), Te(IV), Sb(III) and their mixtures in DMSO solutions were investigated using cyclic voltammetry and linear sweep voltammetry measurements. On this basis, Bi_xSb_2−xTe_y film thermoelectric materials were prepared by potentiodynamic electrodeposition technique from mixed DMSO solution, and the compositions, structures, morphologies as well as the thermoelectric properties of the deposited films were also analyzed. The results show that Bi_xSb_2−xTe_y compound can be prepared in a very wide potential range by potentiodynamic electrodeposition technique in the mixed DMSO solutions. After anneal treatment, the deposited film prepared in the potential range of −200 to −400 mV shows the highest Seebeck coefficient (185 μV/K), the lowest resistivity (3.34 × 10⁻⁵ Ω m), the smoothest surface, the most compact structure and processes the stoichiometry (Bi_0.49Sb_1.53Te_2.98) approaching to the Bi_0.5Sb_1.5Te₃ ideal material most. This Bi_0.49Sb_1.53Te_2.98 film is a kind of nanocrystalline material and (0 1 5) crystal plane is its preferred orientation.     

Electrodeposited PbO2 thin film as positive electrode in PbO2/AC hybrid capacitor

Lead dioxide (PbO₂) thin films were prepared on Ti/SnO₂ substrates by means of electrodeposition method. Galvanostatic technique was applied in PbO₂ film formation process, and the effect of deposition current on morphology and crystalline form of the PbO₂ thin films was studied by means of scanning electron microscopy (SEM) and X-ray diffraction (XRD). The energy storage capacity of the prepared PbO₂ electrode was investigated by means of cyclic voltammetry (CV) and charge/discharge cycles, and a rough surface structure PbO₂ film was selected as positive electrode in the construction of PbO₂/AC hybrid capacitor in a 1.28 g cm⁻³ H₂SO₄ solution. The electrochemical performance was determined by charge/discharge tests and electrochemical impedance spectroscopy (EIS). The results showed that the PbO₂/AC hybrid capacitor exhibited high capacitance, good cycling stability and long cycle life. In the voltage range of 1.8-0.8 V during discharge process, considering the weight of all components of the hybrid capacitor, including the two electrodes, current collectors, H₂SO₄ electrolyte and separator, the specific energy and power of the device were 11.7 Wh kg⁻¹ and 22 W kg⁻¹ at 0.75 mA cm⁻², and 7.8 Wh kg⁻¹ and 258 W kg⁻¹ at 10 mA cm⁻² discharge currents, respectively. The capacity retains 83% of its initial value after 3000 deep cycles at the 4 C rate of charge/discharge.     

Li diffusion in LiNi0.5Mn0.5O2 thin film electrodes prepared by pulsed laser deposition

Kinetic and transport parameters of Li ion during its extraction/insertion into thin film LiNi_0.5Mn_0.5O₂ free of binder and conductive additive were provided in this work. LiNi_0.5Mn_0.5O₂ thin film electrodes were grown on Au substrates by pulsed laser deposition (PLD) and post-annealed. The annealed films exhibit a pure layered phase with a high degree of crystallinity. Surface morphology and thin film thickness were investigated by field emission scanning electron microscopy (FESEM). The charge/discharge behavior and rate capability of the thin film electrodes were investigated on Li/LiNi_0.5Mn_0.5O₂ cells at different current densities. The kinetics of Li diffusion in these thin film electrodes were investigated by cyclic voltammetry (CV) and galvanostatic intermittent titration technique (GITT). CV was measured between 2.5 and 4.5 V at different scan rates from 0.1 to 2 mV/s. The apparent chemical diffusion coefficients of Li in the thin film electrode were calculated to be 3.13 × 10⁻¹³ cm²/s for Li intercalation and 7.44 × 10⁻¹⁴ cm²/s for Li deintercalation. The chemical diffusion coefficients of Li in the thin film electrode were determined to be in the range of 10⁻¹²-10⁻¹⁶ cm²/s at different cell potentials by GITT. It is found that the Li diffusivity is highly dependent on the cell potential.     

One-step electrochemical preparation of the ternary (BixSb1−x)2Te3 thin films on Au(1 1 1): Composition-dependent growth and characterization studies

This study reports on the synthesis of ternary semiconductor (Bi_xSb_1−x)₂Te₃ thin films on Au(1 1 1) using a practical electrochemical method, based on the simultaneous underpotential deposition (UPD) of Bi, Sb and Te from the same solution containing Bi³⁺, SbO⁺, and HTeO₂⁺ at a constant potential. The thin films are characterized by X-ray diffraction (XRD), atomic force microscopy (AFM), energy dispersive spectroscopy (EDS) and reflection absorption-FTIR (RA-FTIR) to determine structural, morphological, compositional and optic properties. The ternary thin films of (Bi_xSb_1−x)₂Te₃ with various compositions (0.0 ≤ x ≤ 1.0) are highly crystalline and have a kinetically preferred orientation at (0 1 5) for hexagonal crystal structure. AFM images show uniform morphology with hexagonal-shaped crystals deposited over the entire gold substrate. The structure and composition analyses reveal that the thin films are pure phase with corresponding atomic ratios. The optical studies show that the band gap of (Bi_xSb_1−x)₂Te₃ thin films could be tuned from 0.17 eV to 0.29 eV as a function of composition.     

Electrodeposition of magnetic CoPd thin films: Influence of plating condition

The manufacture and properties evaluation of Co-based thin film alloys are extensively studied because of their magnetic properties that make them a critical element in many different applications and devices. Therefore the electrodeposition of CoPd alloy thin films was studied from a chloride bath containing glycine as additive. The cobalt content in the CoPd deposits varied from 6.4 to 94.0 at% by controlling the pH and [Co²⁺]/[Pd²⁺] ratio in the bath. Current efficiencies were independent of the solution pH and bath composition. The morphology of the deposits depended on the applied current density: current densities higher than 50 mA cm⁻² resulted in deposits with a typical cauliflower morphology. For current densities lower than 25 mA cm⁻² cracks was observed. The XRD measurements showed that all CoPd alloys were amorphous. The magnetic properties for CoPd alloys revealed that the coercivity (H_c) values ranged from 84 up to 555 Oe and the magnetic saturation (M_s) from 0 to 1.73 T.     

Structural and electrochemical characterization of SnOx thin films for Li-ion microbattery

SnO_x thin films were prepared by reactive radio frequency magnetron sputtering with different sputtering powers. X-ray photoelectron spectroscopy suggested that all the films have similar chemical stoichiometry as SnO_1.5. X-ray diffraction and transmission electro microscopy results showed that crystal size of the SnO_x thin films gradually increases with increase of sputtering power from 50 to 150 W. Cyclic voltammetry and galvanostatic charge/discharge cycling measurements indicated that the electrochemical properties of SnO_x films strongly rely on their crystal sizes as well as surface morphologies. The SnO_x film deposited at sputtering power of 120 W exhibits the best electrochemical performances. It could deliver a reversible capacity of 670 μAh cm⁻² μm⁻¹ at 50 μA cm⁻² in the voltage range of 0.1-1.2 V up to 50 cycles.     

Electrochemical impedance spectroscopy of electrodes modified with thin films of MgMnCO3 layered double hydroxides

The electrochemical impedance spectra of MgMnCO₃ LDH films oxidized at different dc potentials were recorded. The results were fitted to a Randles type cell by replacing the Warburg impedance with a mass transfer resistance in parallel with a constant phase element. The films charge transfer resistances decreased dramatically at the onset of manganese oxidation. In thin films, R_ct decreased from 10⁴ Ω for an un-oxidized film to a minimum of 40 Ω in a film oxidized at 0.32 V, before increasing back to 10⁴ Ω in a film oxidized at 0.5 V. Iodometry measurements show these changes correspond to increases in the manganese average valence in the films from 3.09+ prior to oxidation, to 3.80+ at 0.32 V and 3.95+ at 0.5 V. In thicker films, however, a much higher dc potential, 1.0 V, was required to return R_ct to 10⁴ Ω. There was also less change in the manganese average valence in the thicker films. Oxidation at 1.0 V only increased the manganese valence to 3.33+. For the partially oxidized films, the Nyquist plots consisted of depressed semicircles at high frequency, followed by linear regions at lower frequency where the impedance was controlled by mass transport. The effective diffusion coefficient estimated from the low frequency impedance was 1 × 10⁻⁹ cm² s⁻¹, consistent with proton diffusion in solid electrodes. The impedance spectrum of a partially oxidized film reduced at −0.2 V was similar to that of the un-oxidized film.     

Electrochemical synthesis and characterization of mixed molybdenum-rhenium oxides

The electrodeposition of Mo_xRe_1−xO_y films (0.6 ≤ x ≤ 1) on indium-tin oxide (ITO) coated glass substrates from acidic peroxo-polymolybdo-perrhenate solutions is described. Trends in film growth were established as a function of potential from +0.4 V to −0.7 V vs Ag/AgCl by analyzing the composition and stoichiometry of the deposit using inductively coupled plasma mass spectrometry (ICPMS) and X-ray photoelectron spectroscopy (XPS). These experiments show that the concentration of rhenium increases linearly with the deposition potential and that the deposits are mixed-valent containing up to five different metal oxidation states (i.e., Mo^IV, Mo^V, Mo^VI, Re⁰, Re^IV). Electroanalytical techniques were used to explore the deposition mechanism, including chronocoulometry, cyclic voltammetry, spectroelectrochemistry, and electrochemical quartz crystal nanogravimetry (EQCN). At potentials positive to −0.26 V, perrhenate (Re^VIIO₄⁻) behaves as a redox mediator to accelerate the deposition of a mixed-valent molybdenum oxide, but at more negative potentials mixed molybdenum-rhenium oxides are produced.     

Orientation of graphitic planes during annealing of “dip deposited” amorphous carbon film: A carbon K-edge X-ray absorption near-edge study

Annealing effect of amorphous carbon thin films on Si(1 0 0) substrates is studied by normal incidence and angle dependent carbon K-edge X-ray absorption near-edge structure (XANES) spectroscopy. The angle dependence of the XANES signal shows that the graphitic basal planes are oriented perpendicular to the surface when the film is annealed at 1000 °C. Micro-Raman spectroscopy reveals two well-separated bands the D band at 1355 cm⁻¹ and G band at ∼1600 cm⁻¹, and their I_D/I_G intensity ratio indicates the formation of more graphitic film at higher annealing temperatures. X-ray diffraction pattern of 1000 °C temperature annealed film confirms the formation of graphite structure.     

The underpotential deposition of Bi2Te3−ySey thin films by an electrochemical co-deposition method

Bi₂Te_3−ySe_y thin films were grown on Au(1 1 1) substrates using an electrochemical co-deposition method at 25 °C. The appropriate co-deposition potentials based on the underpotential deposition (upd) potentials of Bi, Te and Se have been determined by the cyclic voltammetric studies. The films were grown from an electrolyte of 2.5 mM Bi(NO₃)₃, 2 mM TeO₂, and 0.3 mM SeO₂ in 0.1 M HNO₃ at a potential of −0.02 V vs. Ag|AgCl (3 M NaCl). X-ray diffraction (XRD), scanning electron microscopy (SEM), and energy dispersive spectroscopy (EDS) were employed to characterize the thin films. XRD and EDS results revealed that the films are single phase with approximate composition of Bi₂Te_2.7Se_0.3. SEM studies showed that the films are homogeneous and have micronsized granular crystallites.     

Li-intercalation behaviour of vanadium oxide thin film prepared by thermal oxidation of vanadium metal

In order to produce thin films of crystalline V₂O₅, vanadium metal was thermally oxidised at 500 °C under oxygen pressures between 250 and 1000 mbar for 1-5 min. The oxide films were characterised by X-ray photoelectron spectroscopy (XPS), atomic force microscopy (AFM), X-ray diffraction (XRD) and Rutherford backscattering spectrometry (RBS). The lithium intercalation performance of the oxide films was investigated by cyclic voltammetry (CV), chronopotentiometry and electrochemical impedance spectroscopy (EIS). It was shown that the composition, the crystallinity and the related lithium intercalation properties of the thin oxide films were critically dependent on the oxidation conditions. The formation of crystalline V₂O₅ films was stimulated by higher oxygen pressure and longer oxidation time. Exposure for 5 min at 750 mbar O₂ at 500 °C resulted in a surface oxide film composed of V₂O_5, and consisting of crystallites up to 200 nm in lateral size. The thickness of the layer was about 100 nm. This V₂O₅ oxide film was found to have good cycling performance in a potential window between 3.8 and 2.8 V, with a stable capacity of 117 ± 10 mAh/g at an applied current density of 3.4 μA/cm². The diffusion coefficients corresponding to the two plateaus at 3.4 and 3.2 V were determined from the impedance measurements to (5.2 and 3.0) × 10⁻¹³ cm² s⁻¹, respectively. Beneath the V₂O₅ layer, lower oxides (mainly VO₂) were found close to the metal. At lower oxygen pressure and shorter exposure times, the oxide films were less crystalline and the amount of V⁴⁺ increased in the surface oxide film, as revealed by XPS. At intermediate oxygen pressures and exposure times a mixture of crystalline V₂O₅ and V₆O₁₃ was found in the oxide film.     

Electrodeposited Pd-Co catalyst for direct methanol fuel cell electrodes: Preparation and characterization

Pd-Co alloy has been recently proposed as a catalyst for the cathode of direct methanol fuel cells with both excellent oxygen reduction activity and methanol tolerance, hence electrodeposition of this alloy is an attractive approach for synthesizing porous metal electrodes with high methanol tolerance in direct methanol fuel cells. In this study, we electrodeposited two types of Pd-Co films onto Au substrates by applying different current density (−10 or −200 mA cm⁻²); and then characterized them in terms of morphology, composition, crystal structure, and catalytic activity. Pd-Co deposited at −10 mA cm⁻² was smooth and possessed smaller particles (ca. 10 nm), while that at −200 mA cm⁻² was dendritic (or rough) and possessed larger particles (ca. 50 nm). Both the Pd-Co alloys were found to be almost the same structure, i.e. a solid solution of ca. Pd₇Co₃ with Pd-skin, and also confirmed to possess comparable activity in oxygen reduction to Pt (potential difference at 1.0 μA cm⁻² was 0.05 V). As for methanol tolerance, cell-voltage was not influenced by addition of 1 mol dm⁻³ methanol to the oxidant solution. Our approach provides fundamental technique for synthesizing Pd-Co porous metal electrodes by electrodeposition.     

Cyclic durable high-capacity Sn/Cu6Sn5 composite thin film anodes for lithium ion batteries prepared by electron-beam evaporation deposition

Sn/Cu₆Sn₅ alloy composite thin films were directly prepared by electron-beam deposition for anodes of lithium ion batteries. The thin film was comprised of micro/sub-microcrystalline Sn and Cu₆Sn₅, where the polyhedral micro-sized Sn grains were uniformly dispersed in the loose Cu₆Sn₅ matrix. Lithiation reaction kinetics were confirmed to be controlled by a diffusion step and the diffusion coefficient of Li⁺ in the thin film anode was determined to be 1.91 × 10⁻⁷ cm²/s. The galvanostatic cycling behavior of Sn/Cu₆Sn₅ composite thin film anodes was studied under different conditions. Stable capacities of more than 370 mAh/g were obtained by discharging from 1.25 to 0.1 V. Structure changes and fading mechanism of the thin film electrodes was discussed based on SEM, XRD and EDX investigations. The present results demonstrated that the multi-phase composite structure can improve electrochemical performance of the Cu-Sn alloy thin film electrodes.     

Characterization of electrodeposited CuInSe2 (CIS) film

CuInSe₂ thin film was grown by one-step cathodic electrodeposition on Pt-coated glass using amperometry mode (fixed potential), in a three-electrode potentiostatic system containing the precursor solutions, 10 mM CuSO₄, 50 mM InSO₄, 30 mM SeO₂, and 0.1 M K₂SO₄ as a supporting electrolyte, at a pH of 1.5 (±0.1) adjusted with 0.1 M H₂SO₄. The structure, chemical composition, morphology, optical properties, and uniformity of the electrodeposited CuInSe₂ film were characterized by X-ray diffraction (XRD), electron probe micro analysis (EPMA), UV-vis-NIR spectrophotometry, field-emission scanning electron microscopy (FE-SEM), and Auger electron spectroscopy (AES), respectively. Several experiments were conducted in which the deposition voltage and post-annealing conditions were varied. As the applied deposition voltage was increased from −0.6 V to −0.7 V versus Ag/AgCl, a CuInSe₂ thin film with a chalcopyrite structure came to be predominantly formed, in accordance with the chemical composition, while the formation of the binary compounds (CuO and Cu_xSe) which influence the degradation of the performance in the application of CIS-based solar cells, rapidly decreased. The optimum conditions consisted of an annealing temperature of about 350 °C for 30 min under nitrogen ambient. At this temperature, a CuInSe₂ thin film, in the form of ternary compound, is formed with the required conditions, namely good crystallinity, good stoichiometry, a suitable bandgap, and depth uniformity.     

Nucleation of Sn and Sn-Cu alloys on Pt during electrodeposition from Sn-citrate and Sn-Cu-citrate solutions

The initial stages of Sn and Sn-Cu electrodeposition from Sn-citrate and Sn-Cu-citrate solutions on Pt were studied using both current-controlled and potential-controlled electrochemical techniques. For both Sn-citrate and Sn-Cu-citrate solutions, when the current density is controlled to lower than 15 mA/cm², potentials remain almost constant which is appropriate to plate dense and uniform films. When the current density is controlled to between 25 and 35 mA/cm², potentials drop quickly initially, followed by a gradual increase to a constant value. When current density is controlled to higher than 50 mA/cm², potential oscillation happens, and significant hydrogen evolution prevents the formation of dense and continuous Sn and Sn-Cu films. A constant transition time constant indicates a diffusion-controlled process. The diffusion coefficient calculated from the Sand equation is about 3.8 × 10⁻⁶ cm²/s for the Sn-citrate solution and 4.1 × 10⁻⁶ cm²/s for the Sn-Cu-citrate solution. The morphology of both Sn and Sn-Cu deposits plated under different potentials was examined by atomic force microscopy (AFM) and the distribution of each element were analyzed using Auger imaging. Analysis of both the electrochemical results at −0.72, −1.1 and −1.5 V and AFM images for both Sn and Sn-Cu deposits at −1.1 and −1.5 V suggested progressive nucleation controlled by diffusion for both Sn and Sn-Cu electrodeposition. Tin reacted with Pt to form PtSn₄, and co-deposited with Cu to form Cu₆Sn₅ during nucleation, with more Sn forming at higher applied potentials.     

Film thickness dependence of the dielectric properties of SrTiO3/BaTiO3 multilayer thin films deposited by double target RF magnetron sputtering

Four-layer SrTiO₃/BaTiO₃ thin films ((ST/BT)₄) with various thicknesses deposited on Pt/Ti/SiO₂/Si substrates at 500 °C by double target RF magnetron sputtering have been investigated using X-ray diffraction (XRD), scanning electron microscopy (SEM), profilometry, capacitance-voltage and current-voltage measurements. The XRD patterns reveal the frame formation of the sputter deposited (ST/BT)₄ with controlled modulation. The adhesion between the Pt bottom electrode layer and the BT layer is excellent. The dielectric constant of the (ST/BT)₄ multilayer thin film increases with increasing film thickness. The effects of temperature, frequency, and bias voltage on the dielectric constant of the (ST/BT)₄ multilayer thin films are discussed in detail. The leakage current density of the (ST/BT)₄ multilayer with a thickness of 450.0 nm is lower than 1.0 × 10⁻⁸ A/cm² for the applied voltage of less than 5 V, showing that the multilayer thin films with such a characteristic could be applied for use in dynamic random access memory (DRAMs) capacitors.