FED支撑技术研究现状

ＦＥＤ（ＦｉｅｌｄＥｍｉｓｉｏｎＤｉｓｐｌａｙ,场致发射显示器）是世界上发达国家正在研制的一种具有巨大潜在市场的平板型显示器件,支撑技术是ＦＥＤ研究中的关键技术之一,也是微细加工技术领域的一个有意义的研究课题。叙述了ＦＥＤ对支撑技术的研究要求,介绍了美国、日本的几家公司和研究机构近几年的支撑技术研究方案和结果。     

场发射显示器阴极结构的发展

场发射显示器（FED）集传统的阴极射线管显示（CRT）与液晶显示器（LCD）的优点于一身,具有很大的发展潜力,有望成为数字电视时代显示器件的主流。文章详细论述了电子场发射的原理．从F—N公式出发探讨了FED阴极材料的选取和阴极结构设计的原则,最后论述了FED阴极结构的发展。     

场致发射平面显示器的发展及应用前景

介绍了场致发射平面显示器(FED)的工作原理及研究现状,分析了LCD,PDP,FED等平板显示器的特点,并对FED显示器的应用前景作了展望.     

场发射显示器(FED)荧光粉的研究进展

场发射显示器(FED)是一种新发展起来的平板显示器。它在亮度、视角、响应时间、工作温度范围、能耗等方面具有优良的特性。文章首先简要地介绍了FED发展历史和现状、工作原理以及对荧光粉的要求，然后介绍了FED荧光粉的研究历史和发展现状以及有关FED荧光粉激发和发光机理的相关研究工作。最后就FED荧光粉的研究提出了一些建议。     

Analysis for charged spacers in FED

Charged spacers in the field emission display (FED) are analyzed with the Monte Carlo method. The spacer is made of an insulator, which has generally a high secondary electron emission property. Under electron bombardment, the secondary electron emission induces charge on the spacer. We show that the surface of the spacer is charged positively in FED operation, which would cause an image distortion. We analyze the effect of charging on the spacer in terms of the electron density profile and luminescence profile of a dot near the spacer. Simulation results show that the image of a dot near the spacer is darker and smaller than that of a dot away from the spacer, though electrons are crowded near spacers. The results are confirmed by experiments. Finally, we suggest a way to reduce the effect of spacer charging by introducing a metal strip     

平板显示器中FED与OLED技术特性比较

从发光原理、物理结构、驱动电路和制作3-艺上对场致发射显示器（field emission display,FED）和有机发光二极管（organic light Emitting diode,OLED）进行了详细的技术特性比较,并分析了各自的优缺点,为平板显示领域的研究提供了一定的理论基础。     

加入支撑墙的FED的电场分布及电子轨迹数值模拟

ＦＥＤ内部真空中的电场和电子运动受到支撑结构的影响,为此采用了有限元法计算带有介质支撑墙的ＦＥＤ电场分布;采用龙格－库塔法计算该空间电子轨迹。并且在考虑了介质支撑墙上的二次电子发射之后。定性的分析了空间电场电子轨迹及墙上的电荷积累情况。得出了支撑墙对ＦＥＡ电子轨迹影响的数值结果,对器件的设计提出了建议。     

印刷型FED显示器图像校正模块的设计

为了改善彩色场致发射显示器的显示质量,分析了印刷型FED显示器中存在的色彩偏移、灰度损失和灰度畸变等问题。通过实验测试和理论分析提出了相应的色彩调整与灰度的非线性校正解决方案。将图像校正模块应用到彩色FED驱动电路中,使彩色FED图像的色彩再现和灰度再现性能得到了较好的改善,同时也增强了图像显示的层次和细节程度。     

基于STV7610芯片的FED显示屏驱动电路设计

介绍了STV7610芯片的功能,具体阐述了用其作为FED(场致发射显示器)的驱动芯片的驱动电路实现以及相应的FPGA(现场可编程门阵列)控制电路,并对整体设计进行仿真和功能验证.采用FPGA对STV7610芯片进行控制和数据处理,可以实现对FED的灰度调制.采用将行数据划分子场的驱动方法,充分利用了PDP(等离子显示屏)驱动芯片优越的高压驱动特性,提高了驱动电路的整体性能,对现阶段FED驱动电路的集成化具有重要意义.     

Fabrication of micro-field emitters on ceramic substrates

The Field Emission Display (FED) is one of the most promising flat panel displays for the future. Currently this has been demonstrated using Very Large Scale Integrated circuit (VLSI) thin film technology to manufacture the key component of the FED, which is the Spindt type molybdenum micro-cone-shape field emitters. These are normally produced on glass or silicon substrates. In this paper, a new approach has been successfully developed to fabricate micro-field emitters on ceramic substrates. The significance of this development is that it provides the possibility to integrate small size FEDs into large dimensions.     

基于FPGA的FED显示器PWM灰度调制电路研制

介绍了场致显示器的灰度调制的原理及其灰度调制驱动电路的设计。采用FPGA控制技术实现前端视频信号接口、脉宽灰度调制的功能。通过串并转换模块与寻址芯片的连接，将PWM信号放大驱动FED显示屏实现视频图像的显示。该电路能驱动63．5cm彩色FED样机实现256级灰度显示。     

FED器件的支撑结构设计和实现

使用墙式结构作为FED器件的内的支撑，使用Algor专用力学有限元件对器件各种结构的力学特性进行了数值计算，同时对照器件的电学特性后确定了支撑墙的分布密度，安装位置和装配误差等工艺参数，并完成了现有器件条件下的工艺实现，得到理想的结果。     

VGA级大屏幕印刷型FED视频显示系统的研制

论述印刷型场致发射显示器驱动系统的工作原理,介绍了采用DVI、VGA视频接口技术、专用集成图像灰度调制和集成扫描电路接口技术以及FPGA控制等技术研制出了能驱动显示VGA分辨率的印刷型FED视频显示系统。该系统能显示各种彩色视频图像,图像亮度已达400cd/m2、对比度达1 000:1,电路灰度等级达256级,有效显示对角线尺寸为635 mm(25 in)。     

Design and optimization of the SOI field effect diode (FED) for ESD protection

A thorough investigation is carried out by numerical simulations of the field effect diode (FED) with the aim to explore its potential for ESD protection applications in silicon on insulator (SOI) technologies. It is shown that the carrier lifetime value has an important impact on the device operation. By careful sizing and doping, FED devices with reasonable breakdown voltage values can be achieved but at rather high gate voltage values. Better results are achieved by modifying the doping profile to resemble a PNPN structure with two gates.     

Spacer visibility problem in field emission displays due to surface contamination

Spacer visibility is a critical issue in field emission displays (FEDs). Many reasons can lead to visible spacers, such as charging due to secondary electron emission under electron bombardment. In this paper, we will present results on spacer visibility due to chemical contamination on the spacer surface. We have identified Na contamination as the cause for the white spacer problem observed in the early developing stage of FED. The diffusion of Na from spacers to its adjacent cathode area during field emission operation caused higher field emission current from those field emitters. We believe the higher emission is due to the temporary gettering effect from the Na species, which cleaned the local field emitters. We have also found the existence of Pb on the spacer surface could create the dark spacer problem. To avoid any spacer visibility problem, the spacer surface must be kept clean. Any post clean procedure used to clean the surface should not leave any trace of elements such as Na, or Pb.     

场发射显示器阴极材料的发展

文章介绍了显示器件的发展现状,场发射显示器（FED）是显示领域内有发展潜力的一种平板显示器。有望成为数字电视时代的主流显示器件。阴极技术是FED的关键技术,文章还分析了FED的工作原理,并详细论述了FED阴极材料的应用与发展。     

平面薄膜场致发射的模型分析

该文系统地讨论宽带隙平面薄膜的场致电子发射(FEE)的机理。基本的理论模型是电子对表面势垒的隧穿效应,同时考虑到晶格的散射和薄膜势垒中微细贯穿通道的电子发射作用。分析结果表明,宽带隙平面薄膜结构用作场致电子发射阴极,具有发射电压的阈值低,发射电子的能量分布范围小等优点。另外这种结构制作简单、材料选择范围宽、理化稳定性好,是一种理想的场致发射电子源。     

Modeling and analysis of ZnSe-Ge HBTs

A Gummel-Poon model is developed for ZnSe-Ge-GaAs heterojunction bipolar transistors (HBTs). In this structure, undoped Ge spacers are placed at the emitter-base and collector-base junctions. Injected current components as well as bulk, spacer, and space charge recombination current components are modeled. Early voltage and bandgap narrowing effects are included in the model. The device performance was simulated and compared with the experimental results. The paper shows a good agreement between our model and the experimental results. The paper shows also that using spacers would improve the device performance. The advantages of this model is that it is analytical, compact, and can be easily implemented in CAD tool programs to simulate single or double HBTs with similar or dissimilar materials structure for the emitter and collector.     

低电子亲和势内场发射阴极

平面阴极的场致发射显示器件由于性能优越、结构简单而具有很好的应用前景。这种器件要实用化,急需提高阴极的电子发射率。提出一种改进栅极结构的方法达到提高电子发射率的目的;介绍了双金属栅极的结构和制作工艺;阐述了利用两种金属的接触电位差降低阴极电子发射势垒的原理;解释了实验中低驱动电压时发射率提高较多的现象。与单金属极相比双金属栅极的阴极电子发射率提高了5倍以上。     

A review of HVI technology

The reduction of breakdown voltage (BV) influenced by high voltage interconnection (HVI) is a key problem in power integrated circuit, which essentially is that the modulation of electric field distribution at the device surface caused by HVI. In this paper, we review the developments of the methods to shield HVI including thick insulating film technology, field reduction layer technology, field plate technology and self-shielding technology. The four kinds of HVI technologies prevent BV degradation from the introduced adverse charge induced by interconnections in different ways. Thick insulting film technology increases the distance between the HVI and surface of silicon. Field reduction layer technology uses additional doping layers with optimized impurity concentration to enhance the depletion of the drift region under HVI. Field plate technology shields the influence of HVI with various field plate structures. Self-shielding technology makes HVI avoid crossing over high voltage junction terminal (HVJT), thus no additional shielding structure is needed. The divided reduced surface field (RESURF) technology solves the leakage current in the self-shielding structure.