Grain Growth in Sintered ZnO and ZnO-Bi2O3 Ceramics

Grain growth in a high-purity ZnO and for the same ZnO with Bi₂O₃ additions from 0.5 to 4 wt% was studied for sintering from 900° to 1400°C in air. The results are discussed and compared with previous studies in terms of the phenomenological kinetic grain growth expression: G ⁿ— G ⁿ₀= K ₀ t exp(— Q/RT ). For the pure ZnO, the grain growth exponent or n value was observed to be 3 while the apparent activation energy was 224 ± 16 kJ/mol. These parameters substantiate the Gupta and Coble conclusion of a Zn²⁺ lattice diffusion mechanism. Additions of Bi₂O₃ to promote liquidphase sintering increased the ZnO grain size and the grain growth exponent to about 5, but reduced the apparent activation energy to about 150 kJ/mol, independent of Bi₂O₃ content. The preexponential term K ₀ was also independent of Bi₂O₃ content. It is concluded that the grain growth of ZnO in liquid-phase-sintered ZnO-Bi₂O₃ ceramics is controlled by the phase boundary reaction of the solid ZnO grains and the Bi₂O₃-rich liquid phase.     

Transmission Electron Microscope Study of Antimony-Doped Zinc Oxide Ceramics

A transmission electron microscope investigation of a ZnO powder and low-temperature air-sintered pellets with small additions of Sb₂O₃ was conducted in order to study the thin Sb-rich film on the surfaces of ZnO particles. This film was found to be noncrystalline at temperatures below 700°C, and partially crystalline or completely crystalline above this temperature. An oriented overgrowth of the spinel Zn₇Sb₂O₁₂ was observed on the prismatic planes as well as on the basal planes of ZnO crystallites. It is shown that these coherently overgrown spinel films are responsible for the inhibition of grain growth at high temperatures.     

Sintering of Zinc Oxide Doped with Antimony Oxide and Bismuth Oxide

The phase change, densification, and microstructure development of ZnO doped with both Bi₂O₃ and Sb₂O₃ are studied to better understand the sintering behavior of ZnO varistors. The densification behavior is related to the formation of pyrochlore and liquid phases; the densification is retarded by the former and promoted by the latter. The pyrochlore phase, whose composition is Bi_3/2ZnSb_3/2O₇, appears below 700°C. The formation temperature of the liquid phase depends on the Sb/Bi ratio: about 750°C for Sb/Bi < 1 by the eutectic melting in the system ZnO—Bi₂O₃, and about 1000°C for Sb/Bi > 1 by the reaction of the pyrochlore phase with ZnO. Hence, the densification rate is determined virtually by the Sb/Bi ratio and not by the total amount of additives. The microstructure depends on the sintering temperature. Sintering at 1000°C forms intragrain pyrochlore particles in ZnO grains as well as intergranular layers, but the intragrain particles disappear at 1200°C by the increased amount of liquid phase, which enhances the mobility of the solid second phase.     

Pyrochlore Phases in the System ZnO–Bi2O3–Sb2O5: I. Stoichiometries and Phase Equilibria

Two cubic pyrochlore phases exist in the system ZnO–Bi₂O₃–Sb₂O₅. Neither has the supposed "ideal" stoichiometry, Zn₂Bi₃Sb₃O₁₄. One, P ₁, is a solid solution phase, Zn_{2+ x} Bi_{2.96−( x − y )}Sb_{3.04− y} O_14.04+δ where 0< x <0.13(1), 0< y <0.017(2) and a =10.4285(9)−10.451(1) Å. The other, P ₂, is a line phase, Zn₂Bi_3.08Sb_2.92O_13.92 with a =10.462(2) Å. Subsolidus phase relations at 950°C involving phases P ₁ and P ₂ in the ZnO–Bi₂O₃–Sb₂O₅ phase diagram have been determined.     

Microstructure of Varistors Prepared with Zinc Oxide Nanoparticles Coated with Bi2O3

Zinc oxide (ZnO) nanoparticles coated with 1–5 wt% Bi₂O₃ were prepared by precipitating a Bi(NO₃)₃ solution onto a ZnO precursor. Transmission electron microscopy showed that a homogeneous Bi₂O₃ layer coated the surface of the ZnO nanoparticles and that the ZnO particle size was ∼30–50 nm. Scanning electron microscopy showed that ZnO grains sintered at 1150°C were homogeneous in size and surrounded by a uniform Bi₂O₃ layer. When the ZnO grains were surrounded fully by Bi₂O₃ liquid phases, further increases in the ZnO grain size were not affected by the Bi₂O₃ content. This predesigned ZnO nanoparticle structure was shown to promote homogeneous ZnO grains with perfect crystal growth.     

Formation of Zinc–Antimony-Based Spinel Phases

Formation of spinel phases in ZnO–Sb₂O₃and ZnO–Sb₂O₃–Bi₂O₃systems is studied by the use of X-ray diffraction. The formation of nonstoichiometric Zn_2.33Sb_0.67O₄phase is observed in both the systems at ∼900°C. However, in these systems, at higher temperatures ( T ≥ 1100°C), formation of the inverse spinel phase Zn₇Sb₂O₁₂is observed. The study has been extended to understand the effect of CrO₃doping on the stability of the different spinel phases in the previously mentioned systems. Interestingly, in both the systems, samples doped with CrO₃, displayed the presence of Zn_2.33Sb_0.67O₄phase <1200°C, indicating the stabilization of the spinel phase by CrO₃.     

Grain Growth of ZnO during Bi2O3 Liquid-Phase Sintering

Grain growth of ZnO during the liquid-phase sintering of binary ZnO–Bi₂O₃ ceramics has been studied for Bi₂O₃ contents from 3 to 12 wt% and sintering from 900° to 1400°C. The results are considered in combination with previously published studies of ZnO grain growth in the ZnO–Bi₂O₃ system. For the Bi₂O₃ contents of the present study, the rate of ZnO grain growth is found to decrease with increasing Bi₂O₃. Activation analysis, when combined with the results of similar analyses of the previous studies, reveals a change in the rate-controlling mechanism for ZnO grain growth. Following a low-Bi₂O₃-content region of nearly constant activation energy values of about 150 kJ/mol, further Bi₂O₃ additions cause an increase of the activation energy to about 270 kJ/mol. consistent with accepted models of liquid-phase sintering, it is concluded that the rate-controlling mechanism of ZnO grain growth during liquid-phase sintering in the presence of Bi₂O₃ changes from one of a phase-boundary reaction at low Bi₂O₃ levels to one of diffusion through the liquid phase at about the 5 to 6 wt% Bi₂O₃ level and above.     

Grain Growth of ZnO in ZnO-Bl2O3 Ceramics with Ai2O3 Additions

Grain growth of ZnO during liquid-phase sintering of a ZnO-6 wt% Bi₂O₃ ceramic was investigated for A1₂O₃ additions from 0.10 to 0.80 wt%. Sintering in air for 0.5 to 4 h at 900° to 1400°C was studied. The AI₂O₃ reacted with the ZnO to form ZnAl₂O₄ spinel, which reduced the rate of ZnO grain growth. The ZnO grain-growth exponent was determined to be 4 and the activation energy for ZnO grain growth was estimated to be 400 kJ/mol. These values were compared with the activation parameters for ZnO grain growth in other ceramic systems. It was confirmed that the reduced ZnO grain growth was a result of ZnAl₂O₄ spinel particles pinning the ZnO grain boundaries and reducing their mobility, which explained the grain-growth exponent of 4. It was concluded that the 400 kJ/mol activation energy was related to the transport of the ZnAl₂O₄ spinel particles, most probably controlled by the diffusion of O^2- in the ZnAl₂O₄ spinel structure.     

Microstructure Development in Low-Antimony Oxide-Doped Zinc Oxide Ceramics

The grain growth of ZnO ceramics sintered with low additions of Sb₂O₃ (<500 ppm of Sb) was investigated. Additions of Sb<250 ppm resulted in a coarse-grained microstructure with large ZnO grains (55–70 μm), much larger than the grain size of ZnO ceramics without any Sb₂O₃ addition (45 μm). The addition of 500 ppm of Sb resulted in a fine-grained microstructure with an average ZnO grain size of about 12 μm. The results are explained by an inversion-boundary (IB) -induced grain-growth mechanism. The grain-growth exponent has a value of about 2 as long as the grains containing IBs grow at the expense of IB-free grains. It increases to about 4 after the IB-containing grains impinge on each other, and achieves values above 10 for additions of 500 ppm of Sb when IBs nucleate in nearly all the ZnO grains so that grains with IBs prevail in the microstructure at an early stage in the grain-growth process.     

Effect of Bismuth of Oxide Content on the Sintering of Zinc Oxide

Densification and microstructure de velopment in Bi₂O₃-doped ZnO have been studied with a special emphasis on the effect of the Bi₂O₃ content. A small amount of Bi₂O₃ in ZnO (0.1 mol%) retarded densification, but the addition of Bi₂O₃ to more than 0.5 mol% promoted densification by the formation of a liquid phase above the eutectic temperature (∼740°C). The liquid phase increased grain-boundary mobility, which was responsible for the formation of intragrain pores and the decrease in the sintered density. The increase in the Bi₂O₃ content increased the probability of the formation of skeleton structure, which reduced the grain growth rate and the sintered density.     

Microstructure and Current–Voltage Characteristics of Multicomponent Vanadium-Doped Zinc Oxide Varistors

The effects of the oxide additives MnO₂, Co₃O₄, and Sb₂O₃, commonly incorporated in commercial Bi₂O₃-doped ZnO varistors, on the current–voltage characteristics and microstructure of 0.25 mol% V₂O₅-doped ZnO varistors have been studied. MnO₂ is the most significant additive in terms of its effects on varistor performance. Varistor performance can also be improved by increasing the V₂O₅ content to 0.5 mol% in a ZnO ceramic containing 1 mol% MnO₂. Further increases in the V₂O₅ content of 1 mol% MnO₂-doped material cause a deterioration in varistor behavior. The microstructure of the samples consists mainly of ZnO grains with zinc vanadates as the minority secondary phases. Additional spinel phase is formed when Sb₂O₃ is incorporated.     

Grain Growth Control in Sb2O3-Doped Zinc Oxide

Microstructure development in Sb₂O₃-doped ZnO was studied to evaluate the influence of inversion boundaries (IBs) on ZnO grain growth. In general, the addition of Sb₂O₃ is believed to inhibit the ZnO grain growth via the formation of spinels and IBs, but we have shown that even the conditions of exaggerated grain growth can be created in this system. We designed an experiment for diffusional doping of ZnO under slightly increased partial pressure of Sb₂O₃. In the high-concentration regime we observed no spinels, and yet the ZnO grains were small and inhibited in growth, while in the low-concentration regime we found huge grains, several times larger than normal ZnO grains, showing an obvious exaggerated growth. By controlling the number of nuclei with IBs we can design coarse-grained microstructures even with Sb₂O₃ doping, which has far-reaching implications in the production of low-voltage varistor devices.     

Varistor Behavior at Twin Boundaries in ZnO

The electrical behavior of commercial ZnO varistor devices has been examined with voltage contrast microscopy and point contact dc electrical measurements. Nonlinear voltage-dependent behavior has been observed across both of the major crystalline boundary types present in the system: Bi₂O₃ layer containing ZnO grain boundaries (or grain boundaries) and antimony spinel layer internal ZnO inversion twin boundaries (or twin boundaries). Twin boundaries, which bisect practically every grain in a typical commercial device, possess potential barriers with higher average breakdown voltages than do grain boundaries. Certain zinc antimonate spinel (Zn₇Sb₂O₁₂) grains are electrically isolated from the matrix, whereas others are conductive within the matrix.     

Pore–Boundary Separation Behavior during Sintering of Pure and Bi2O3-Doped ZnO Ceramics

Pore–boundary separation in ZnO and 99.95ZnO·0.05Bi₂O₃ (in mol%) specimens during sintering at 1200°C was investigated. In pure ZnO specimens, pores were attached to the grain boundaries and disappeared during the final stage of sintering. In the Bi₂O₃-doped specimens, on the other hand, many pores were separated from the boundaries and trapped inside the grains. Observation using transmission electron microscopy showed that a thin layer of Bi₂O₃-rich phase existed at the boundaries in the Bi₂O₃-doped specimens. The pore separation in 99.95ZnO·0.05Bi₂O₃ specimens was explained in terms of the dihedral angle change and the high mobility of a liquid film boundary.     

Effects of Bismuth Sesquioxide on the Characteristics of ZnO Varistors

The nonlinearity of ZnO varistors is significantly influenced by the Bi₂O₃ and Sb₂O₃ contents, as well as by the phase composition of the Bi₂O₃. Degradation of the current-voltage characteristics due to the applied voltage is not always lowered by the β—γ transition of the Bi₂O₃ phase. Lattice parameter determinations and stress analyses suggest that the Bi₂O₃-rich phase in multigrain junctions causes mechanical strain at the grain boundary which may play an important role in the current-voltage characteristics of ZnO varistors.     

Effect of Bi2O3 Addition on the Sintering Temperature and Microwave Dielectric Properties of Zn2SiO4 Ceramics

Bi₂O₃ was added to a nominal composition of Zn_1.8SiO_3.8 (ZS) ceramics to decrease their sintering temperature. When the Bi₂O₃ content was <8.0 mol%, a porous microstructure with Bi₄(SiO₄)₃ and SiO₂ second phases was developed in the specimen sintered at 885°C. However, when the Bi₂O₃ content exceeded 8.0 mol%, a liquid phase, which formed during sintering at temperatures below 900°C, assisted the densification of the ZS ceramics. Good microwave dielectric properties of Q × f =12,600 GHz, ɛ_r=7.6, and τ_f=−22 ppm/°C were obtained from the specimen with 8.0 mol% Bi₂O₃ sintered at 885°C for 2 h.     

Zinc Vanadates in Vanadium Oxide-Doped Zinc Oxide Varistors

Convergent-beam electron diffraction has been used to determine the space groups of β- and γ-Zn₃(VO₄)₂ particles in vanadium oxide-doped zinc oxide varistors. The crystal structure of β-Zn₃(VO₄)₂ has been determined to be monoclinic with space group P 2₁ and lattice parameters of a = 9.80 Å, b = 8.34 Å, c = 10.27 Å, and β= 115.8°, whereas that of γ-Zn₃(VO₄)₂ is monoclinic with space group Cm and a = 10.40 Å, b = 8.59 Å, c = 9.44 Å, and β= 98.8°. Energy-dispersive X-ray microanalysis of these two phases shows significant deviations from their expected stoichiometry. It is apparent that the β-phase is, in fact, the metastable Zn₄V₂O₉ phase, whereas the γ-phase either is a new oxide that consists of zinc, vanadium, and manganese or, more likely, is a zinc vanadate phase with a Zn:V atomic ratio of 1:1 that has the ability to go into solid solution with manganese.     

Effects of Antimony Oxide on the Characteristics of ZnO Varistors

The breakdown voltage, the upturn voltage, and the nonlinearity of the ZnO varistors are significantly influenced by the Sb₂O₃ and SiO₂ contents, as well as by the β→γ transition of the Bi₂O₃ phase. The lattice parameter of spinel is influenced by the coexisting Bi₂O₃ phase. Antimony oxide disperses into the powders of ZnO and other additives in the early stage of sintering, and finally gathers again as particles of spinel which may play an important role in the improvement of the nonlinearity by stressing the interfaces of two ZnO grains.     

Phase Relations in the System Bi2O3-WO3

Phase relations in the system Bi₂O₃-WO₃ were studied from 500° to 1100°C. Four intermediate phases, 7Bi₂O₃· WO₃, 7Bi₂O₃· 2WO₃, Bi₂O₃· WO₃, and Bi₂O₃· 2WO₃, were found. The 7B₂O · WO₃ phase is tetragonal with a ₀= 5.52 Å and c ₀= 17.39 Å and transforms to the fcc structure at 784°C; 7Bi₂O₃· 2WO₃ has the fcc structure and forms an extensive range of solid solutions in the system. Both Bi₂O₃· WO₃ and Bi₂O₃· 2WO₃ are orthorhombic with (in Å) a ₀= 5.45, b ₀=5.46, c ₀= 16.42 and a ₀= 5.42, b ₀= 5.41, c ₀= 23.7, respectively. Two eutectic points and one peritectic exist in the system at, respectively, 905°± 3°C and 64 mol% WO₃, 907°± 3°C and 70 mol% WO₃, and 965°± 5°C and 10 mol% WO₃.     

Evaporation of Zinc Oxide from Spinel Solid Solutions in Vacuum

The mechanism for the evaporation of ZnO from powders of (Zn₀₂Co_0.8)O·Al₂O₃ (ZCA) and (Zn_0.2Ni_0.8)O·Al₂O₃ (ZNA) spinels was studied at 1335° to 1500°C in vacuum of 3×10⁻⁵ to 10⁻⁴ torr. The evaporation of ZnO occurred in two stages: at a constant rate in the first and a decreasing rate in the second. The rate-determining process was analyzed as a decomposition reaction at the first stage and as the conjugated process of decomposition reaction and diffusion in the solid at the second. The evaporation rate constant and surface emissivity showed a similar dependence on temperature. The ratio of the concentration of ZnO at the surface to the initial concentration was =0.7 when the first stage of evaporation changed to the second.