Properties of Ca1−xHoxMnO3 perovskite-type electrodes

In this work, Ca_1−xHo_xMnO₃ (x = 0, 0.1 and 0.2) perovskite oxide pelleted electrodes were prepared from the respective powders obtained by the citrate route method at 1173 K.The electrodes exhibit particle size that decreases with the holmium content in the oxide. All the samples reveal semiconductor behaviour and the presence of holmium induces a marked decrease in the electrical resistivity. The results can be well attributed to the changes in the Mn⁴⁺/Mn³⁺ ratio. Electrodes were characterized by cyclic voltammetry and chronopotentiometry. Cyclic voltammetric studies indicate a similar behaviour of the electrodes, irrespective of their composition. Two pairs of peaks were identified and associated, one to the Mn⁴⁺/Mn³⁺ redox couple and the other to the Mn⁷⁺/Mn⁴⁺ and Mn⁶⁺/Mn⁴⁺ redox couples. The voltammetric data provide evidence that the electrodes roughness factor increases with the introduction of Ho-ions in the oxide structure, what is consistent with the crystallite size obtained by X-ray diffraction (XRD) and the morphology observed by scanning electron microscopy (SEM). The Ho-substituted electrodes present higher current density when compared with CaMnO₃ electrodes what can be attributed both to higher electrical conductivity and smaller particle size. The chronopotentiometric studies have shown that the discharge occurs by different mechanisms for the oxide electrodes with and without Ho.     

Synthesis and properties of lanthanum hexaaluminate ceramic La1−xCaxAl11−y−zMgyTizO18

The aim of the present work is to obtain ceramic materials with a hexagonal structure and high density, hardness and mechanical strength at lower synthesis temperature. Ceramic samples with nominal composition La_1−xCa_xAl_11−y−zMg_yTi_zO₁₈ (x=0–1; y=0–3; z=0–3,5) are prepared. The samples are sintered at temperature 1500 °C by one-stage and two-stage ceramic technology. By X-ray diffraction and scanning electron microscopy, predominant phase LaAl₁₁O₁₈ and second phases LaAlO₃ and -Al₂O₃ are identified. Ceramic materials are characterized with high physico-mechanical properties and may be find application for production of mill bodies and materials for immobilization of nuclear waste.     

Effect of Ca on the microstructural and electrochemical properties of La2.3−xCaxMg0.7Ni9 hydrogen storage alloys

The microstructural and electrochemical properties of La_2.3−xCa_xMg_0.7Ni₉ hydrogen storage alloys have been studied systematically. The microstructure examined by XRD, SEM and EDX shows that the alloys consist of multi-phases, which are (La, Mg)₂Ni₇ phase, LaMgNi₄ phase, (La, Mg)Ni₃ phase and LaNi₅ phase. It is can be found that Ca does not appear to segregate. This phenomenon is different from Mg. With increasing Ca content, the main phase varies from (La, Mg)₂Ni₇ phase (x = 0) to (La, Mg)Ni₃ phase (x = 0.3), LaNi₅ phase (x = 0.6, 0.8) and (La, Mg)Ni₃ phase (x = 1.0, 1.3). The maximum discharge capacities of the alloy electrodes increase from 244.6 mAh/g (x = 0) to 380 mAh/g (x = 1.0), and then decrease to 353.6 mAh/g (x = 1.3). The discharge capacities of the alloys are related to phase content. Cell volumes of LaNi₅ phase, (La, Mg)₂Ni₇ phase and (La, Mg)Ni₃ phase all decrease and the high rate dischargeability (HRD) is improved by adding Ca. The alloy electrodes also show relative good cycling stability up to 100 cycles.     

Effect of film structure on the electrochemical properties of gold electrodes for neural implants

The development of interfaces with low impedance is a prerequisite for long-term neural devices. A broad range of new materials has been developed for this purpose. Here we show how the performance of traditional gold electrodes can be improved by controlling the deposition parameters of the gold film. The morphology of the film was tuned from granular to columnar structure as shown by scanning electron microscopy of film cross sections. Electrochemical characterisation with impedance spectroscopy, chronoamperometry and cyclic voltammetry demonstrates that the dense columnar structure of the films effectively lowers the impedance of the interface and increases charge injection properties. The samples produced are also compared to titanium nitride films, a well-established electrode material with a columnar structure.     

Effect of electrolyte addition on activity of (Ga1−xZnx)(N1−xOx) photocatalyst for overall water splitting under visible light

Effects of electrolyte addition on photocatalytic activity of (Ga_1−xZn_x)(N_1−xO_x) modified with either Rh_2−yCr_yO₃ or RuO₂ nanoparticles as cocatalysts for overall water splitting under visible light (λ > 400 nm) are investigated. The cocatalyst Rh_2−yCr_yO₃ is confirmed to selectively promote the photoreduction of H⁺, while RuO₂ functions as both H₂ evolution sites and as efficient O₂ evolution sites. The activity of Rh_2−yCr_yO₃-loaded (Ga_1−xZn_x)(N_1−xO_x) is found to be suppressed in the presence of Cl⁻, which undergoes oxidation by photogenerated holes in the valence band of (Ga_1−xZn_x)(N_1−xO_x). Alkaline- and alkaline earth-metal cations in the reactant solution compensate the negative effect of Cl⁻ to a certain extent depending on the metal cation employed. Among the electrolytes examined, the addition of an appropriate amount of NaCl or A₂SO₄ (A = Li, Na, or K) to the reactant solution without pH control is found to increase activity by up to 75% compared to the case without additives. Direct splitting of seawater to produce H₂ and O₂ is also demonstrated using Rh_2−yCr_yO₃-loaded (Ga_1−xZn_x)(N_1−xO_x) catalyst under visible light.     

Microwave dielectric properties and co-firing with copper of (Bi1−xCux)(Nb1−xWx)O4 ceramics

Effect of substitution of CuO and WO₃ on the microwave dielectric properties of BiNbO₄ ceramics and the co-firing between ceramics and copper electrode were investigated. The (Bi_1−xCu_x)(Nb_1−xW_x)O₄ (x = 0.005, 0.01, 0.015, 0.02) composition can be densified between 900 and 990 °C. The microwave dielectric constants lie between 36 and 45 and the pores in ceramics were found to be the main influence. The Q values changes between 1400 and 2900 with different x values and sintering temperatures while Q_f values lie between 6000 and 16,000 GHz. The microwave dielectric losses, mainly affected by the grain size, pores, and the secondary phase, are discussed. The (Bi_1−xCu_x)(Nb_1−xW_x)O₄ ceramics and copper electrode was co-fired under N₂ atmosphere at 850 °C and the EDS analysis showed no reaction between the dielectrics and copper electrodes. This result presented the (Bi_1−xCu_x)(Nb_1−xW_x)O₄ dielectric materials to be good candidates for LTCC applications with copper electrode.     

Microwave absorption materials — IV Preparation of the mixed layer structure phases, RexTa1−xS2 and OsxTa1−xS2, and some electrical and magnetic properties

The binary systems ReS₂–TaS₂ and OsS₂-TaS₂ are studied. Mixed layer structure (MLS) phases are found in Re_xTa_1−xS₂ with a composition range of 0.25x0.5, as well as in the Os_xTa_1−xS₂ with a composition range of 0.26x0.33. The MLSs of both phases are constructed by a random and mixed stacking of the 2Hb-layers and 3R-layers. The magnetic susceptibilities of samples from both phases show a weak Pauli-paramagnetism. The paramagnetic moment and the electrical conductivity of both phases decrease as the composition x increases. The behaviour of the paramagnetic moment and the electrical conductivity of those phases offer us a good example of the number of conduction electrons and their effect.     

Dielectric and ferroelectric properties of Ba(ZrxTi1−x)O3 ceramics

It is known that Curie temperature of barium titanate system can be altered by the substitution of dopants into either A- or B-site. Dopants could pinch transition temperature, lower Curie temperature, and raise the rhombohedral–orthorhombic and orthorhombic–tetragonal phase transition close to room temperature. This isovalent substitution could improve the ferroelectric properties of the BaTiO₃-based system. In this study, barium zirconate titanate Ba(Zr_xTi_1−x)O₃ (BZT; x = 0, 0.02, 0.05 and 0.08) ceramics were prepared by conventionally mixed-oxide method. The ferroelectric properties of BZT ceramics were investigated. Increasing Zr content in the BaTiO₃-based compositions caused a decrease in Curie temperature (T_c). At T_c, the highest relative permittivity of BZT with an addition of 0.08 mol% of Zr was 12,780. The BZT specimens with the additions of 0.05 mol% and 0.08 mol% of Zr presented the remanent polarization at 25 μC/cm² and 30 μC/cm², respectively.     

Partial oxidation of methane to syngas over BaTi1 − xNixO3 catalysts

Performances of BaTi_1 − xNi_xO₃ perovskites, prepared using sol–gel method, as catalysts for partial oxidation of methane to syngas have been studied. The catalysts were characterized by XRD, BET and TEM. The experimental studies showed the calcination temperature and Ni content exhibited a significant influence on catalytic activity. Among catalysts tested, the catalyst BaTi_0.8Ni_0.2O₃ exhibited the best activity and excellent stability.     

Structure and magnetic properties of Fe1−xCox nanowires in self-assembled arrays

Fe_1−xCo_x nanowires in self-assembled arrays with varying compositions were produced by the template-assisted pulsed electrochemical deposition method. The structural and magnetic properties of the arrays were investigated using several experimental techniques. TEM analyses indicated that the nanowires were regular, uniform, 8 μm in length and 50 nm in diameter. The results of X-ray diffraction indicated that the body-centered-cubic (bcc) (α), face-centered-cubic (fcc) (γ), and hexagonal-close-packed (hcp) () Fe–Co phases appeared in different compositions. Magnetic measurements showed that the coercivity and squareness of the hysteresis loops of the Fe_1−xCo_x changed with their compositions, which may be attributable to shape anisotropy. The room temperature ⁵⁷Fe Mössbauer spectra of the arrays of the Fe_1−xCo_x nanowires revealed strong shape anisotropy.     

The crystalline-to-amorphous transition in shock-loaded mullite Al2(Al2+2xSi2−2x)O10−x in the light of shear modulus anisotropy

We present experimental evidence for shock-wave induced amorphization in polycrystalline and single crystal mullite, Al₂^VI(Al_2+2x Si_2−2x)^IVO_10−x, at peak pressures above 35 GPa. The transition proceeds along with a network of very thin glass lamellae (planar deformation features (PDFs)) of mullite-normative composition extending parallel to low-index crystallographic planes including {1 2 0}, {2 3 0} and {1 1 0}. Cumulative microstructural evidence from the PDFs derived via analytical transmission electron microscopy suggests a shear-induced formation mechanism. Experimental PDFs match the relative minima of the calculated representation surfaces of the shear modulus suggesting that suitable PDF orientations can be derived from the elastic anisotropy of mullite. PDFs in mullite are in good agreement with those reported for naturally shocked sillimanite.Unlike the formation of shear-induced PDF-type glass lamellae in shocked mullite, the thermal decomposition of mullite following high post-shock temperatures results in a fine-grained phase assemblage consisting of corundum plus amorphous silica, and represents the most abundant transformation mechanism in the shock regime investigated (20–40 GPa). No stishovite was observed. At shock levels beyond 35 GPa thermal decomposition of mullite may occur along with PDFs within the same specimen.     

Ce1−xCuxO2−x/Al2O3/FeCrAl catalysts for catalytic combustion of methane

A series of the Ce_1−xCu_xO_2−x/Al₂O₃/FeCrAl catalysts (x = 0–1) were prepared. The structure of the catalysts was characterized using XRD, SEM and H₂-TPR. The catalytic activity of the catalysts for the combustion of methane was evaluated. The results indicated that in the Ce_1−xCu_xO_2−x/Al₂O₃/FeCrAl catalysts the surface phase structure were the Ce_1−xCu_xO_2−x solid solution, -Al₂O₃ and γ-Al₂O₃. The surface particle shape and size were different with the variety of the molar ratio of Ce to Cu in the Ce_1−xCu_xO_2−x solid solution. The Cu component of the Ce_1−xCu_xO_2−x/Al₂O₃/FeCrAl catalysts played an important role to the catalytic activity for the methane combustion. There were the stronger interaction among the Ce_1−xCu_xO_2−x solid solution and the Al₂O₃ washcoats and the FeCrAl support.     

Preparation, microstructure and microwave dielectric properties of ZrxTi1−xO4 (x=0.40–0.60) ceramics

Zr_xTi_1−xO₄ (x=0.40–0.60) ceramics sintered without additives were prepared from powders made by the coprecipitation of metal salts from aqueous solutions in order to investigate the existence range of a homogeneous phase and the relationships between composition, microstructure and the dielectric properties. XRD, TEM, SEM, EDS, and the dielectric measurements were used to characterize the products. A homogeneous solid solution was obtained. Its crystal structure was isomorphous with ZrTiO₄. The variation of the lattice parameters with TiO₂ content was discussed. The optimum sintering temperature of samples was dependent of composition. TiO₂ suppressed the densification and acted as a grain growth enhancer during the sintering process. With the increase in TiO₂ content the relative densities of the sintered bodies decrease, while the grain sizes increase. The dielectric properties at microwave frequency (1.8 GHz) in this system, especially Q value, were poor, due to low densification, impurities and lattice defects. The dielectric constant _r and Q value exhibited a significant dependence on the relative density and composition. Both _r and Q increased with the increase in relative density, but they were primarily influenced by the composition and the effect of the relative density could be ignored when the relative density was greater than 90% theoretical. _r increased slightly with increasing TiO₂ content, while Q value decreased.     

The influence of O2 on the electrochemistry of thin film, hydrogen storage, electrodes

The influence of oxygen on the electrochemical response of magnesium-scandium (Mg-Sc) thin film electrodes has been investigated. It was found that the impact of oxygen dissolved in the electrolyte is two-fold. Firstly, it gives rise to a mixed-potential under open-circuit conditions that is much more positive than the true equilibrium potential of the hydride material, thus yielding incorrect thermodynamic data. Secondly, it causes self-oxidation of the hydrogenated thin films, making calculations regarding hydrogen storage capacities (mAh/g) not straightforward. A novel oxygen-scrubbing device was developed to de-oxygenate the argon used as purging gas during the electrochemical measurements. This self-regenerative system is based on the high reactivity of the methylviologen single radical towards oxygen. A comparison between various electrochemical responses of identical Mg-Sc thin film electrodes, measured with and without the presence of oxygen, showed distinct deviations in equilibrium potential and hydrogen storage capacity.     

Highly oriented diamond growth on SixGe1−x (100) thin films

Highly oriented (100) diamond films have been successfully grown on Si_xGe_1−x (100) thin films by bias enhanced nucleation (BEN) in microwave plasma chemical vapor deposition (MPCVD) system. Raman spectra show the 1332 cm⁻¹ peak which proves the formation of diamond. Diamond nucleation density on Si_xGe_1−x substrate estimated by scanning electron microscopy is higher than 10⁹ cm⁻². The interface between diamond and Si_xGe_1−x substrate was characterized by transmission electron microscopy (TEM). About 20 nm decrease in thickness of the Si_xGe_1−x film was observed after bias enhanced nucleation step. TEM shows the existence of silicon carbide and heteroepitaxial diamond grains grown on Si_xGe_1−x substrate. Characterization from high-resolution TEM on the specimen of short time deposition reveals that a number of epitaxial diamond grains were directly nucleated on Si_xGe_1−x with {111} interplanar spacing ratio of diamond and Si_xGe_1−x of 2:3. The diamond nucleation is found to be preferred on the ridge position of the rough substrate surface. Diamond {100} facets were quickly developed in the early stage of growth.     

Hydrotreating properties of mixed NbxMo1−xS2 alumina supported catalysts

Niobium-molybdenum disulfide solid solution (Nb_xMo_1−xS₂) has been prepared in a dispersed state on gamma alumina. The existence of this solid solution supported on alumina carrier has been proven with the help of EXAFS technique. The catalytic properties of these materials have been studied in hydrogenation and hydrodesulfurization reactions. Interestingly, as already observed for niobium sulfide, the activity of the Nb_xMo_1−xS₂ solid solution (HDS of DBT, P_tot=33 bar) is not decreased in the presence of H₂S up to p(H₂S)=200 Torr, at least up to x=0.4.     

Thickness dependent growth and ferroelectric/dielectric properties of phase-pure 0.65Pb(Mg1/3Nb2/3)O3-0.35PbTiO3 thin film derived from a modified sol-gel process

Annealing parameter and thickness are two significant factors affecting microstructure and electrical performance of sol-gel derived 0.65Pb(Mg_1/3Nb_2/3)O₃?0.35PbTiO₃ (0.65PMN-0.35PT) thin film. In this paper, various durations are firstly selected for the investigations on annealing parameter of 0.65PMN-0.35PT thin film. Enhanced insulating and ferroelectric properties can be obtained for the film annealed for 1 min due to its phase-pure and homogeneous perovskite structure. Based on this, a series of 0.65PMN-0.35PT thin films with various thicknesses by modifying deposition layer are synthesized annealed for 1 min and the effects of thickness on crystalline, insulating, ferroelectric and dielectric properties are characterized. It reveals that thickness-dependent behavior can be noticed for 0.65PMN-0.35PT thin film with the results that the 8-layered film possesses a relative large remanent polarization (P_r) of 23.34 μC/cm², and reduced leakage current density of 10^?9 A/cm² with low dissipation factor (tanδ) of 0.03 can be achieved for the 14-layered film.     

Effect of periodic precursor on sulfurization process of Cu2ZnSnS4 thin film

In this study, Cu₂ZnSnS₄ (CZTS) thin films were fabricated by periodically sequential depositions of metallic precursors by magnetron sputtering followed by sulfurization. The element compositions, crystal structures, and surface morphologies of the single-period precursor (Zn/Sn/Cu) and four-period precursor (Zn/Sn/Cu/Zn/Sn/Cu/Zn/Sn/Cu/Zn/Sn/Cu) during the sulfurization process were investigated. The experimental results showed that in the initial stage of sulfurization, the single-period precursor had a more efficient reaction with sulfur vapor below 300?°C because of its thicker metal layers. During the process of sulfurization, the CZTS phase first formed in the four-period film at 400?°C, owing to the wide distribution of the internal layer in the periodic thin film. With a further increase in temperature, the crystallinity of CZTS was enhanced and the secondary phases were reduced. A CZTS phase with Cu-poor and Zn-rich composition was confirmed in both thin films after complete sulfurization. The CZTS thin film with a four-period precursor showed a better degree of crystallization, and a single phase of CZTS was obtained more easily than in the single-period thin film. Therefore, using a periodic structure can promote the sulfurization reaction of Cu-Zn-Sn precursors and enhance the properties of CZTS thin films.     

Structure and microwave dielectric properties of Nd(2−x)/3LixTiO3

The structure evolution, and microwave dielectric properties of Nd_(2−x)/3Li_xTiO₃ ceramics (0 ≤ x ≤ 0.5) were investigated in this paper. X-ray diffraction (XRD) and scanning electron microscopy (SEM) results show that samples with x = 0.2–0.4 exhibit single phase. Multi-phases of Nd₂Ti₂O₇, Nd_2/3TiO₃ and Nd₂Ti₄O₁₁ were observed when x = 0 and 0.1. The concentration and ordering degree of A-site decrease with the increase of x value. The dielectric constant increases up to x = 0.2 and then decreases with the further increase of x value. The Qf value decreases with the increase of x value. The temperature coefficient of resonant frequency exhibits negative value and the absolute value decreases greatly with the decrease of x value.     

Effect of potential on bismuth telluride thin film growth by electrochemical atomic layer epitaxy

In the present study, bismuth telluride compound thin film was grown by means of electrochemical atomic layer epitaxy (ECALE) with an automated thin layer flow cell deposition system. The dependence of the Bi and Te deposition potentials on Pt electrode was studied. Because developing a contact potential between the substrate and the growing semiconductor, the deposition potential adjustment is necessary for the first 30 or more cycles of each component. The dependence of the deposit as a function of the deposition potential adjustment slope has been investigated. The results show that an excess elemental Bi existed at a slope of −2 mV/p (p indicates per cycle), indicating that this is a lack of deposition at the potential. Single-phase Bi₂Te₃ compound could be obtained between −4 and −6 mV/p. Bi₂Te₃ and Bi₄Te₃ coexistence is observed at a slope of −10 mV/p. The EDS data indicates that the stoichiometry of compound is consistent with XRD result. SEM studies show that the deposits are inhomogeneous and have an micron sized particles morphology.